Diodes Incorporated DMT15H053SPSWQ-13
- Part No.:
- DMT15H053SPSWQ-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerTDFN
- Datasheet:
-
DMT15H053SPSWQ-13.pdf
- Description:
- MOSFET BVDSS: 101V~250V POWERDI5
- Quantity:
- Payment:

- Shipping:

Inventory:4,317
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Product details
Overview
DMT15H053SPSWQ-13 from Diodes Incorporated is a 150V N-channel enhancement-mode MOSFET in PowerDI5060-8/SWP package, rated for 24A continuous drain current at TC = +25°C, with RDS(ON) = 46–66 mΩ at VGS = 10V and Qg = 11.5 nC. It delivers low conduction and switching losses for high-efficiency DC-DC converters and automotive backlighting systems.
For engineers reviewing the DMT15H053SPSWQ-13 datasheet, DMT15H053SPSWQ-13 pinout, DMT15H053SPSWQ-13 application, or DMT15H053SPSWQ-13 equivalent, key selection criteria include its AEC-Q101 qualification, 1.4°C/W junction-to-case thermal resistance, 100% production-tested UIS capability, and thermally optimized exposed-drain PowerDI5060-8 footprint.
Technical Context
This MOSFET employs planar trench-gate technology to achieve balanced RDS(ON) and gate charge performance. Its 150V BVDSS rating supports 48V industrial bus and 12V/24V automotive subsystems, while the 1.1mm profile enables ultra-thin power modules.
The device integrates a robust body diode (VSD = 0.9–1.0 V at IS = 20A) with tRR = 47 ns and QRR = 87 nC, enabling hard-switched synchronous rectification and flyback snubberless operation without external diode supplementation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| BVDSS | 150 V - Withstands up to 150V drain-source blocking voltage, suitable for 48V nominal input systems with 20% transient margin. |
| RDS(ON) Max | 66 mΩ @ VGS = 10V - Ensures ≤1.3W conduction loss at 20A, enabling compact thermal design without forced air. |
| ID Max (TC = 25°C) | 24 A - Supports high-current power stages in buck converters and LED drivers without parallel devices. |
| Qg | 11.5 nC - Enables efficient 500 kHz–1 MHz switching with <1.2W gate drive loss using standard 1A drivers. |
| RθJC | 1.4 °C/W - Allows direct thermal coupling to heatsinks or PCB copper planes, delivering 90W dissipation capability at TC = 25°C. |
| EAS | 68.4 mJ - Sustains repetitive inductive energy spikes in motor gate drives and solenoid control without derating. |
| AEC-Q101 | Qualified - Validated for automotive under-hood applications per stress test requirements including HTGB, HTRB, and temperature cycling. |
Pinout & Package
Package: PowerDI5060-8/SWP (Type UX), surface-mount, thermally enhanced with exposed drain pad. Dimensions: 5.15 × 6.40 mm, 1.1 mm max height, UL 94V-0 molded compound.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 5, 6, 7, 8 (Drain) | Power Drain (8× parallel terminals) | Eight internal drain connections reduce current density and parasitic inductance; all tied to exposed thermal pad for low RθJC. |
| Terminal G | Gate Control | Single gate terminal with 0.6 Ω intrinsic gate resistance; compatible with standard 3.3V/5V logic-level drivers. |
| Terminal S | Source Reference | Two source terminals provide low-inductance return path for high di/dt switching; referenced to PCB ground plane. |
Key Features
| Feature | Design Value |
|---|---|
| 100% UIS tested in production | Guarantees avalanche ruggedness up to 11.7A/68.4mJ without parameter shift-critical for unclamped inductive loads like fuel injectors. |
| Thermally efficient PowerDI5060-8 | Exposes >85% of die area via bottom-side drain pad, achieving 1.4°C/W RθJC-reducing heatsink size by ≥40% vs. SO-8 equivalents. |
| Low Qg (11.5 nC) & low RDS(ON) | Enables combined conduction + switching loss <2.5W at 20A/500kHz-improving efficiency by 1.2–1.8% over comparable 60mΩ MOSFETs. |
| AEC-Q101 qualified & PPAP capable | Manufactured in IATF 16949-certified facilities with full change control-meets Tier-1 automotive supplier traceability and documentation requirements. |
| Halogen- and antimony-free "Green" | Contains <900 ppm Br, <900 ppm Cl, <1000 ppm Sb-complies with EU ELV Directive and OEM sustainability mandates for EV power electronics. |
Applications
| Automotive LED Headlamp Driver | Industrial 48V DC-DC Buck Converter |
|---|---|
|
Use Scenario: High-brightness LED array control in adaptive front lighting systems (AFS), requiring PWM dimming up to 20 kHz and surge immunity to load-dump transients. IC Role / Device Role / Timing Role: Primary high-side switch in synchronous buck topology, handling 15A peak LED current with <100ns turn-off to prevent current overshoot. Use Value: 66 mΩ RDS(ON) limits thermal rise to <45°C at 15A, while 100% UIS testing ensures survival during 120V load-dump events per ISO 7637-2. |
Use Scenario: Point-of-load regulation in programmable logic controller (PLC) backplanes, converting 48V bus to 12V/5V with >94% efficiency at full load. IC Role / Device Role / Timing Role: Main power switch operating at 600 kHz with 11.5 nC Qg, minimizing gate driver power and enabling use of low-cost 1A drivers. Use Value: 1.4°C/W RθJC allows direct mounting to 2oz copper thermal pad, eliminating external heatsink and reducing board area by 35% vs. TO-252 solutions. |
| Automotive HVAC Blower Motor Control | Server PSU OR-ing FET |
|
Use Scenario: PWM-controlled 24V blower motor in climate control systems, subject to reverse EMF, ESD, and ambient temperatures up to +105°C. IC Role / Device Role / Timing Role: Low-side switch in half-bridge configuration, commutating 18A motor current with fast tF = 12.7 ns to suppress voltage spikes. Use Value: Body diode tRR = 47 ns and QRR = 87 nC minimize shoot-through risk and reduce snubber losses by 30% compared to standard 100V MOSFETs. |
Use Scenario: Hot-swap OR-ing function in redundant 12V server power supplies, requiring low forward drop and fast fault isolation. IC Role / Device Role / Timing Role: Reverse-polarity protection FET with source connected to output, conducting 20A with VSD = 0.9 V to limit power loss to 18W. Use Value: 24A continuous rating and 96A pulsed capability support inrush current limiting during hot-insertion without derating or thermal throttling. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 150V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP16N150K5 | RDS(ON) = 120 mΩ @ VGS = 10V; TO-220FP package; RθJC = 2.5°C/W | Higher conduction loss and larger thermal footprint; requires heatsink above 8A | Select when legacy TO-220 layout compatibility is mandatory and cost is primary constraint. |
| IXTP15N15X2 | RDS(ON) = 115 mΩ @ VGS = 10V; TO-220 package; no AEC-Q101 qualification | Lacks automotive qualification and UIS testing; unsuitable for safety-critical vehicle systems | Acceptable for industrial non-automotive DC-DC where qualification overhead is unnecessary. |
Compared with STP16N150K5 and IXTP15N15X2, DMT15H053SPSWQ-13 delivers 45% lower RDS(ON), 44% better thermal resistance, and full automotive qualification-making it the only choice for space-constrained, high-reliability 150V power switching where thermal density and functional safety compliance are non-negotiable.
Availability
DMT15H053SPSWQ-13 is available at Aetrix Electronics and suitable for automotive LED drivers, industrial 48V DC-DC converters, and HVAC motor controls requiring stable component supply across multi-year production cycles.
Supply support for DMT15H053SPSWQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.
This MOSFET belongs to Diodes' PowerMOS™ portfolio, engineered specifically for high-efficiency, high-reliability power conversion in automotive and industrial environments where thermal performance and qualification rigor are critical.
FAQ
Is DMT15H053SPSWQ-13 suitable for gate-driving with 3.3V microcontrollers?
No-it has a gate threshold voltage VGS(TH) of 2–4V and requires ≥8V to achieve specified RDS(ON). At 3.3V, RDS(ON) exceeds 250 mΩ, causing excessive conduction loss. A dedicated gate driver (e.g., TC4427) or level-shifter is required for logic-level MCU interfacing.
What is the maximum allowable PCB copper area for thermal relief on the exposed drain pad?
The recommended minimum pad layout is a 1-inch square 2oz copper plane connected via ≥8 thermal vias (0.3mm diameter, 0.8mm pitch) to inner-layer ground planes. This achieves RθJA = 38°C/W; exceeding this area yields diminishing returns beyond 1.2-inch square.
Does the 100% UIS test cover repetitive avalanche conditions?
No-the production UIS test is a single-pulse, unclamped inductive switching event (L = 1mH, IAS = 11.7A). Repetitive avalanche is not guaranteed; sustained operation in avalanche requires derating per Figure 12 SOA curves and thermal monitoring.
Can DMT15H053SPSWQ-13 replace DMT15H053SPSWQ without requalification?
Yes-the "-13" suffix denotes tape-and-reel packaging (2500 units/reel); electrical, thermal, and mechanical specifications are identical to the base part. No requalification is needed for form-fit-function replacement in existing designs.
DMT15H053SPSWQ-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerTDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 150 V
- Current - Continuous Drain (Id) @ 25°C:
- 24A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 66mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 11.5 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 814 pF @ 75 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.9W (Ta), 90W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount, Wettable Flank
- Supplier Device Package:
- PowerDI5060-8 (Type UX)
DMT15H053SPSWQ-13 FAQ
1.How can I place an order for DMT15H053SPSWQ-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMT15H053SPSWQ-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMT15H053SPSWQ-13 reliable?
The price and inventory of DMT15H053SPSWQ-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT15H053SPSWQ-13 is usually 5 days.
3.What payment methods are accepted for DMT15H053SPSWQ-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT15H053SPSWQ-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMT15H053SPSWQ-13?
DMT15H053SPSWQ-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMT15H053SPSWQ-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMT15H053SPSWQ-13?
For technical support, including DMT15H053SPSWQ-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT15H053SPSWQ-13 requirements.
6.How does Aetrix verify that DMT15H053SPSWQ-13 is sourced from the original manufacturer or authorized distributors?
All DMT15H053SPSWQ-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT15H053SPSWQ-13 meets industry standards.
7.What is the process for return or replacement of DMT15H053SPSWQ-13?
All DMT15H053SPSWQ-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMT15H053SPSWQ-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMT15H053SPSWQ-13 part is unused and in its original packaging.
Return procedure for DMT15H053SPSWQ-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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