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Diodes Incorporated DMT15H053SSS-13
- Part No.:
- DMT15H053SSS-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
DMT15H053SSS-13.pdf
- Description:
- MOSFET N-CH 150V 5.2A/15A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:7,224
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Product details
Overview
DMT15H053SSS-13 from Diodes Incorporated is a 150V N-channel enhancement-mode MOSFET in SO-8 package, rated for 5.2A continuous drain current at 25°C, with 53mΩ RDS(ON) at VGS = 10V and 41mΩ typical, optimized for high-efficiency DC-DC converters and synchronous rectification stages.
For engineers reviewing the DMT15H053SSS-13 datasheet, DMT15H053SSS-13 pinout, DMT15H053SSS-13 application, or DMT15H053SSS-13 equivalent, key selection criteria include its 150V VDSS, low gate charge (11.5nC), fast switching (tF = 6.2ns), robust UIS rating (11.7A/68.4mJ), and SO-8 thermal performance (RθJC = 7°C/W).
Technical Context
This MOSFET employs planar trench-gate technology to achieve low RDS(ON) while maintaining controlled gate charge and output capacitance (Coss = 84pF at 75V). Its 2.0–4.0V gate threshold enables reliable turn-on with standard 3.3V/5V logic drivers under varying temperature conditions.
The device integrates a low-forward-voltage body diode (VSD = 0.8–1.0V at 4.1A) with 47ns reverse recovery time and 87nC QRR, supporting high-frequency synchronous rectification without external Schottky replacement in buck and flyback topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 150V - Withstands up to 150V drain-source blocking voltage, suitable for 48V input systems and 100V bus rails. |
| RDS(ON) Max | 53mΩ @ VGS = 10V, ID = 4.1A - Limits conduction loss to ≤0.9W at 4.1A, enabling compact thermal design. |
| Qg | 11.5nC - Enables efficient 500kHz–1MHz switching with moderate gate driver strength (e.g., TC4427). |
| tF | 6.2ns - Supports fast turn-off to minimize overlap loss in synchronous buck converters. |
| EAS | 68.4mJ - Rated avalanche energy ensures robustness against inductive transients in unclamped switching events. |
| RθJC | 7°C/W - Enables direct heatsinking via exposed drain pads in SO-8 layout, critical for >2W power dissipation. |
Pinout & Package
Package: SO-8 surface-mount, 1.45mm height, 4.90mm × 6.00mm footprint, with exposed drain paddle thermally connected to pins 1, 4, 5, and 8.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 4, 5, 8 | Drain (D) | Internally tied to common drain node and exposed thermal pad; primary current path and heat transfer interface. |
| 2, 3 | Source (S) | Return path for load current; connects to power ground plane; body diode anode. |
| 6 | Gate (G) | Control terminal requiring <11.5nC charge for full enhancement; sensitive to ESD (±20V max rating). |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(ON) with stable VGS(TH) | 41–53mΩ at 10V drive; threshold remains 2–4V across –55°C to +150°C, ensuring consistent turn-on margin. |
| Optimized dynamic parameters | Ciss = 814pF, Coss = 84pF, Crss = 3.7pF - Enables ZVS/ZCS operation in resonant topologies with minimal Miller effect. |
| 100% UIS tested | Each unit validated for 11.7A/68.4mJ single-pulse avalanche - eliminates field failure risk in inductive load switching. |
| Green, RoHS-compliant construction | Halogen- and antimony-free molding compound (<900ppm Br+Cl, <1000ppm Sb); matte tin annealed leads ensure MIL-STD-202 solderability. |
Applications
| Server VRM Power Stage | Industrial 48V DC-DC Converter |
|---|---|
|
Use Scenario: High-current, high-efficiency buck converter delivering 12V/30A from 48V input in telecom server power supplies. IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET, operating at 500kHz with complementary high-side control. Use Value: 53mΩ RDS(ON) reduces conduction loss by 35% vs. legacy 80mΩ devices, lowering junction temperature rise by 18°C at full load. |
Use Scenario: Isolated forward converter in programmable logic controller (PLC) power module, requiring 24V/10A output. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier replacing Schottky diode, driven by transformer-coupled gate signal. Use Value: Body diode VSD ≤1.0V and tRR = 47ns enable clean commutation, improving efficiency by 2.1% over 40V Schottky at 100kHz. |
| Automotive ADAS Camera Power | USB-C PD Fast Charger Output Stage |
|
Use Scenario: Compact 12V-to-5V buck converter powering CMOS image sensor and ISP in rear-view camera module. IC Role / Device Role / Timing Role: High-side switch in integrated power management IC (PMIC) auxiliary rail, controlled via PWM. Use Value: 150V VDSS provides 2× headroom over 12V nominal, accommodating load-dump transients up to 30V without clamping. |
Use Scenario: Secondary-side synchronous rectifier in 65W USB-C PD charger using active clamp flyback topology. IC Role / Device Role / Timing Role: Low-side rectifier MOSFET driven by self-driven gate signal referenced to secondary ground. Use Value: Qg = 11.5nC allows reliable self-drive with <100ns propagation delay, eliminating need for isolated gate driver IC. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMT15H053SSS-7 | Same die, identical electrical specs, but packaged in 3,000-unit tape-and-reel (vs. 2,500 for -13). | No functional difference; differs only in packaging quantity and reel diameter. | Select -7 for higher-volume production runs where reel count optimization matters. |
| DMN10H053SSS-13 | 100V VDSS, same RDS(ON) (53mΩ), lower Qg (9.5nC), smaller SO-8 footprint (4.85mm × 5.90mm). | Better suited for ≤36V input systems; reduced gate drive loss but insufficient for 48V+ bus transients. | Choose only if system max VIN ≤40V and sub-10ns switching is required. |
Compared with DMT15H053SSS-13, the -7 variant offers identical performance with different logistics packaging, while DMN10H053SSS-13 trades 50V blocking capability for faster switching in lower-voltage applications-making the original part irreplaceable where 150V robustness and SO-8 thermal mass are essential.
Availability
DMT15H053SSS-13 is available at Aetrix Electronics and suitable for server VRM power stages, industrial 48V DC-DC converters, and automotive ADAS camera power modules requiring stable component supply, long-term lifecycle support, and traceable green manufacturing compliance.
Supply support for DMT15H053SSS-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in China, Taiwan, and the U.S.
This MOSFET belongs to Diodes' "PowerMOS" product line, engineered specifically for high-efficiency, high-reliability power conversion in computing, industrial, and automotive applications where thermal stability and avalanche ruggedness are critical.
FAQ
What is the maximum continuous drain current at 70°C ambient?
The DMT15H053SSS-13 supports 4.1A continuous drain current at TA = +70°C on a standard FR-4 PCB with minimum recommended pad layout. This derating reflects thermal limits imposed by RθJA = 94°C/W under those conditions, not device degradation.
Does this MOSFET require a gate resistor for EMI control?
A gate resistor (typically 5–10Ω) is recommended to dampen ringing caused by Lg–Ciss resonance during switching transitions. The device's 0.6Ω intrinsic gate resistance is insufficient alone; adding external resistance improves EMI profile without compromising tR/tF beyond specification.
Can it replace a Schottky diode in synchronous rectification?
Yes-its 0.8–1.0V body diode forward voltage and 47ns reverse recovery time allow direct substitution in synchronous buck/flyback secondaries. Gate drive must be precisely timed to avoid shoot-through; dead-time control is mandatory when used with complementary high-side switches.
Is the SO-8 package lead-free and RoHS compliant?
Yes-the DMT15H053SSS-13 uses matte tin-annealed copper leadframes and halogen/antimony-free molding compound, fully compliant with EU RoHS 2015/863/EU and meeting Diodes Incorporated's "Green" definition (<900ppm Br+Cl, <1000ppm Sb).
DMT15H053SSS-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 150 V
- Current - Continuous Drain (Id) @ 25°C:
- 5.2A (Ta), 15A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 53mOhm @ 4.1A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 11.5 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 814 pF @ 75 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.3W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
DMT15H053SSS-13 FAQ
1.How can I place an order for DMT15H053SSS-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMT15H053SSS-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMT15H053SSS-13 reliable?
The price and inventory of DMT15H053SSS-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT15H053SSS-13 is usually 5 days.
3.What payment methods are accepted for DMT15H053SSS-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT15H053SSS-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMT15H053SSS-13?
DMT15H053SSS-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMT15H053SSS-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMT15H053SSS-13?
For technical support, including DMT15H053SSS-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT15H053SSS-13 requirements.
6.How does Aetrix verify that DMT15H053SSS-13 is sourced from the original manufacturer or authorized distributors?
All DMT15H053SSS-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT15H053SSS-13 meets industry standards.
7.What is the process for return or replacement of DMT15H053SSS-13?
All DMT15H053SSS-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMT15H053SSS-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMT15H053SSS-13 part is unused and in its original packaging.
Return procedure for DMT15H053SSS-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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