Diodes Incorporated DMT15H067SSS-13

Overview

DMT15H067SSS from Diodes Incorporated is a 150V N-channel enhancement-mode MOSFET in SO-8 package, rated for 4.5A continuous drain current at 25°C, with 67mΩ R_DS(ON) at V_GS = 10V and 100% production-tested UIS robustness. It serves as a high-efficiency synchronous rectifier or primary/secondary-side switch in isolated DC-DC converters.

For engineers reviewing the DMT15H067SSS datasheet, DMT15H067SSS pinout, DMT15H067SSS application, or DMT15H067SSS equivalent, key selection criteria include its 7°C/W R_θJC, 425pF C_iss, 6.4nC total gate charge, and SO-8 thermal performance under 2W P_D (with enhanced pad layout).

Technical Context

This MOSFET employs planar silicon process optimized for low R_DS(ON) while maintaining fast switching via minimized Cr_ss (2.8pF) and low Q_gd/Q_g ratio (1.6nC/6.4nC). Its body diode exhibits 0.8–1.0V V_SD at 4.1A and 47ns t_RR, supporting hard-switched and synchronous rectification topologies.

Thermal design relies on SO-8's 7°C/W junction-to-case path and 59°C/W R_θJA with 1-inch² copper; safe operating area is defined up to 10µs pulses at 28A, constrained by R_DS(ON) and T_J(max) = 150°C limits.

Key Specifications

Pinout & Package

Package: SO-8 (surface-mount, 8-pin, dual-gull-wing leadframe with exposed drain paddle); RoHS-compliant matte tin finish; moisture sensitivity level 3 per J-STD-020.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Compared with DMTH15H067LPS-13, DMT15H067SSS trades thermal performance for SO-8 compatibility and legacy board reuse; versus IRF7470PBF, it adds guaranteed UIS robustness and lower Cr_ss, critical for reliability in flyback and active-clamp converters.

Availability

DMT15H067SSS is available at Aetrix Electronics and suitable for industrial DC-DC converters, USB-C PD power delivery systems, and telecom PoE++ injectors requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant sourcing.

Supply support for DMT15H067SSS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

This device belongs to Diodes' high-voltage power MOSFET product line, engineered specifically for high-efficiency, high-reliability power conversion in industrial, telecom, and computing infrastructure applications.

FAQ

What is the maximum gate-source voltage rating for DMT15H067SSS?

The absolute maximum V_GS is ±20V per the datasheet's Maximum Ratings table. Operation beyond ±20V risks permanent gate oxide damage. Recommended drive is 10V for full enhancement, with 12V as upper practical limit to avoid accelerated wear while maintaining noise margin.

Does DMT15H067SSS have an integrated body diode, and what are its characteristics?

Yes - it features a monolithic parasitic body diode with typical V_SD of 0.8V at 4.1A and 25°C, reverse recovery time t_RR of 47ns, and Q_RR of 91nC. These values are measured at I_F = 4.1A, di/dt = 100A/µs, and are validated across -55°C to +150°C junction temperature range.

Can DMT15H067SSS be used in automotive applications?

While not AEC-Q101 qualified, the device meets halogen-free and RoHS requirements and operates from -55°C to +150°C. For automotive use, Diodes recommends contacting their application engineering team to evaluate suitability for specific subsystems and obtain PPAP-capable documentation if required.

What is the recommended PCB layout for optimal thermal performance of DMT15H067SSS in SO-8?

Use a minimum 1-inch² copper pour connected to pins 1–5 and 8 (drain) with ≥6 thermal vias (0.3mm diameter, 0.6mm pitch) to inner ground/power planes. The datasheet specifies this layout achieves R_θJA = 59°C/W; smaller pads increase thermal resistance to 94°C/W, limiting usable power to ~1.3W.