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Diodes Incorporated DMT2004UFDF-13
- Part No.:
- DMT2004UFDF-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 6-UDFN Exposed Pad
- Datasheet:
-
DMT2004UFDF-13.pdf
- Description:
- MOSFET N-CH 24V 14.1A 6UDFN
- Quantity:
- Payment:
- Shipping:
Inventory:2,687
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Product details
Overview
DMT2004UFDF from Diodes Incorporated is an N-channel enhancement-mode MOSFET optimized for high-efficiency power management, featuring 24V VDSS, 4.8mΩ RDS(ON) @ 10V, 14.1A ID (TA=25°C), and U-DFN2020-6 (Type F) package. It serves as a low-side synchronous rectifier or load switch in compact DC-DC converters and battery protection circuits.
For engineers reviewing the DMT2004UFDF datasheet, DMT2004UFDF pinout, DMT2004UFDF application, or DMT2004UFDF equivalent, key selection criteria include gate threshold voltage (0.55–1.45V), RDS(ON) at 4.5V (5.8–7.2mΩ), thermal resistance (RθJA = 70°C/W with copper pad), and JEDEC-qualified reliability for industrial power stages.
Technical Context
This MOSFET employs a trench-gate process to achieve low on-resistance while maintaining fast switching (tD(ON) = 3.9ns, tF = 38.6ns) and low gate charge (Qg = 29.6nC @ 4.5V). Its 0.6mm profile and 4mm² footprint support ultra-thin portable designs requiring high current density.
The device integrates a body diode with VSD = 0.65–1.0V @ IS = 2A and supports avalanche energy of 36mJ (IAS = 26A), enabling robust operation under transient overloads in buck converter freewheeling paths.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 24V - Maximum drain-source blocking voltage for 12V-input DC-DC stages with margin |
| RDS(ON) @ 10V | 4.8–6.0mΩ - Enables ≤100mW conduction loss at 9A in high-current load switches |
| RDS(ON) @ 4.5V | 5.8–7.2mΩ - Supports logic-level drive from 3.3V/5V controllers without level shifters |
| ID (TA=25°C) | 14.1A - Sustains continuous output current in 20W USB-PD sink applications |
| Qg @ 4.5V | 29.6nC - Reduces gate driver power demand and enables >1MHz switching in POL converters |
| RθJA (with pad) | 70°C/W - Limits junction rise to <105°C at 1.8W dissipation on 1-inch² copper |
| VGS(TH) | 0.55–1.45V - Ensures reliable turn-on with low-voltage microcontrollers and battery monitors |
Pinout & Package
Package: U-DFN2020-6 (Type F), 2.0×2.0×0.6mm, thermally enhanced with exposed drain paddle. Molded green compound (UL 94V-0), NiPdAu-plated terminals.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control input; low Ciss (1683pF) minimizes Miller effect during fast transitions |
| 2 (S) | Source | Power return node; tied to PCB ground plane for low-inductance current path |
| 3 (D) | Drain | Main power output; connected to internal paddle for optimal thermal conduction |
| 4 (D) | Drain | Second drain terminal; paralleled with Pin 3 to reduce package inductance |
| 5 (S) | Source | Secondary source connection; improves current sharing and reduces bond wire resistance |
| 6 (D) | Drain | Third drain terminal; enhances thermal spreading across bottom paddle surface |
Key Features
| Feature | Design Value |
|---|---|
| Low-profile U-DFN2020-6 | 0.6mm height enables integration into space-constrained wearables and IoT sensors |
| Logic-level gate drive | VGS(TH) max 1.45V ensures full enhancement with 3.3V GPIOs in battery-powered systems |
| High-current capability | 14.1A ID rating supports single-MOSFET 20W power delivery without paralleling |
| JEDEC-qualified reliability | Qualified per AEC-Q standards for high-reliability industrial and automotive auxiliary systems |
| Green RoHS-compliant construction | Halogen- and antimony-free molding compound meets IEC 61249-2-21 for eco-sensitive markets |
Applications
| Battery Protection Circuit | USB-C Power Delivery Sink |
|---|---|
|
Use Scenario: Overcurrent and short-circuit protection in Li-ion battery packs for power tools. IC Role / Device Role / Timing Role: Low-side current-sense switch controlled by battery management IC to disconnect cell stack during fault. Use Value: 4.8mΩ RDS(ON) limits voltage drop to <43mV at 9A, preserving pack efficiency and thermal headroom. |
Use Scenario: Input power switch in 20W USB-C PD sink modules for portable monitors. IC Role / Device Role / Timing Role: High-side or low-side main power switch enabling/disabling VBUS path under MCU control. Use Value: 70°C/W RθJA allows sustained 12.9A at 4.5V gate drive without heatsink in 10mm² board area. |
| Point-of-Load Converter | Wireless Charging Transmitter |
|
Use Scenario: Synchronous rectifier in 5V/3A buck converter powering FPGA I/O banks. IC Role / Device Role / Timing Role: Low-side switch replacing Schottky diode to improve efficiency above 85% at full load. Use Value: 29.6nC Qg reduces gate drive losses, enabling >1.2MHz operation with minimal dead-time penalty. |
Use Scenario: Half-bridge switch in 15W Qi-compliant wireless charging transmitter. IC Role / Device Role / Timing Role: Fast-switching power transistor handling 100kHz–205kHz resonant tank current. Use Value: 36mJ EAS withstands repetitive inductive kickback during ZVS transitions without derating. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMT2004UFDF-7 | Same die and package; differs only in reel size (3,000 pcs vs. 10,000 pcs) and tape width (7″ vs. 13″) | No functional difference; selected based on production volume and SMT line feeder compatibility | Choose -7 for prototyping or low-volume runs; -13 for high-volume manufacturing with 13″ feeders |
| DMN2004LFG-7 | Same U-DFN2020-6 package but higher RDS(ON) (7.5mΩ @ 4.5V) and lower ID (11.5A) | Lower current capability and reduced thermal margin; suitable only for ≤15W applications | Select when cost sensitivity outweighs efficiency requirements and peak current stays below 10A |
Compared with DMT2004UFDF-13, the -7 variant offers identical electrical performance with smaller reel logistics, while DMN2004LFG-7 trades 15% higher conduction loss for lower unit cost-making it viable only where thermal budget exceeds 25°C rise at 10A.
Availability
DMT2004UFDF-13 is available at Aetrix Electronics and suitable for battery management systems, USB-C power delivery sinks, and point-of-load converters requiring stable component supply across multi-year production cycles.
Supply support for DMT2004UFDF-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in IATF 16949-certified facilities.
This MOSFET belongs to Diodes' "Ultra-Low RDS(ON) PowerFET" product line, engineered specifically for high-density, high-efficiency DC-DC conversion in portable and industrial power systems.
FAQ
What is the maximum continuous drain current at 70°C ambient?
The DMT2004UFDF-13 supports 11.2A continuous drain current at TA = +70°C with standard FR-4 PCB layout (2oz copper, minimum pad). This rating assumes no forced airflow and accounts for thermal derating due to increased RDS(ON) and reduced power dissipation (1.8W limit at 70°C).
Does this MOSFET require a gate resistor for stability?
A gate resistor of 3Ω is used in the datasheet's switching time test circuit (Figure 11), confirming stable operation without oscillation. For most 3.3V/5V logic-driven applications, a 0–10Ω series resistor suffices to dampen ringing while maintaining <10ns rise/fall times.
Is the U-DFN2020-6 (Type F) package compatible with standard reflow profiles?
Yes-the device is qualified to J-STD-020 moisture sensitivity Level 1 and supports standard lead-free reflow profiles (peak 260°C, 20–40s above 217°C). The NiPdAu finish ensures solderability per MIL-STD-202, Method 208, with no pre-bake required.
Can DMT2004UFDF-13 be used in automotive applications?
While not AEC-Q101 qualified itself, this part is manufactured in IATF 16949-certified facilities and meets JEDEC high-reliability standards. For automotive use, Diodes recommends the pin-compatible Q-suffix variant (e.g., DMT2004UFDFQ-13), which undergoes full AEC-Q101 stress testing and PPAP documentation.
DMT2004UFDF-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-UDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 24 V
- Current - Continuous Drain (Id) @ 25°C:
- 14.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 6mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id:
- 1.45V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 53.7 nC @ 10 V
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1683 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 800mW (Ta), 12.5W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- U-DFN2020-6 (Type F)
DMT2004UFDF-13 FAQ
1.How can I place an order for DMT2004UFDF-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMT2004UFDF-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMT2004UFDF-13 reliable?
The price and inventory of DMT2004UFDF-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT2004UFDF-13 is usually 5 days.
3.What payment methods are accepted for DMT2004UFDF-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT2004UFDF-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMT2004UFDF-13?
DMT2004UFDF-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMT2004UFDF-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMT2004UFDF-13?
For technical support, including DMT2004UFDF-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT2004UFDF-13 requirements.
6.How does Aetrix verify that DMT2004UFDF-13 is sourced from the original manufacturer or authorized distributors?
All DMT2004UFDF-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT2004UFDF-13 meets industry standards.
7.What is the process for return or replacement of DMT2004UFDF-13?
All DMT2004UFDF-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMT2004UFDF-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMT2004UFDF-13 part is unused and in its original packaging.
Return procedure for DMT2004UFDF-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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