Diodes Incorporated DMT2004UFG-13

Overview

DMT2004UFG-13 from Diodes Incorporated is an N-channel enhancement-mode MOSFET in PowerDI3333-8 package, rated for 24V V_DSS, 5.0mΩ R_DS(ON) @ 10V V_GS, and 70A continuous drain current at T_C = +25°C. It delivers low conduction loss and fast switching for high-efficiency DC-DC converters in space-constrained power management systems.

For engineers reviewing the DMT2004UFG-13 datasheet, DMT2004UFG-13 pinout, DMT2004UFG-13 application, or DMT2004UFG-13 equivalent, key selection criteria include R_DS(ON) at 4.5V gate drive, thermal resistance (R_θJC = 3.5°C/W), UIS ruggedness (26A/36mJ), SOA compliance, and lead-free PowerDI3333-8 footprint compatibility with high-density PCB layouts.

Technical Context

This MOSFET employs a trench-gate process optimized for low R_DS(ON) while maintaining controlled Q_g (53.7nC @ 10V) and Crss (559pF), enabling efficient synchronous rectification and load switching in 12V–24V input buck converters. Its V_GS(TH) range (0.55–1.45V) supports direct logic-level drive from 3.3V/5V controllers.

The device integrates a robust body diode with t_RR = 11.2ns and Q_RR = 22.9nC, minimizing reverse recovery losses in hard-switched topologies. Thermal design leverages the exposed drain pad in PowerDI3333-8 to achieve R_θJC = 3.5°C/W and R_θJA = 54°C/W on 2oz copper with thermal bias.

Key Specifications

Pinout & Package

Package: PowerDI3333-8 - Thermally enhanced surface-mount package with exposed drain pad (pins 5–8), 3.3mm × 3.3mm footprint, 0.8mm height, UL 94V-0 molding compound, and matte tin annealed terminals.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with DMT2004LFG-13, this part trades 0.5mΩ lower R_DS(ON) for identical footprint and cost structure; versus DMTH2004LFD-13, it delivers 11% better thermal resistance and 33% smaller board area-critical for modern automotive and portable power modules.

Availability

DMT2004UFG-13 is available at Aetrix Electronics and suitable for LED backlighting, point-of-load DC-DC conversion, and USB-C power delivery applications requiring stable component supply, long-term lifecycle support, and AEC-Q101-aligned reliability.

Supply support for DMT2004UFG-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global semiconductor company specializing in discrete, analog, and mixed-signal devices, with design centers across Asia, Europe, and the US, serving industrial, computing, consumer, and automotive markets.

This MOSFET belongs to Diodes' PowerDI® portfolio-engineered for high-current, low-R_DS(ON) switching in thermally demanding power management subsystems where board space and thermal resistance are critical constraints.

FAQ

What is the maximum continuous drain current at T_C = +70°C?

The DMT2004UFG-13 supports 55A continuous drain current at case temperature +70°C, per its Absolute Maximum Ratings table. This derating reflects thermal limits of the PowerDI3333-8 package and must be validated against actual PCB copper area, airflow, and ambient conditions in the target application.

Does this MOSFET require a gate resistor for stability?

A gate resistor (typically 3–10Ω) is recommended to dampen ringing caused by gate loop inductance and Crss interaction. The datasheet specifies switching times (t_D(ON), t_R) using RG = 3Ω, confirming that external gate resistance is necessary for predictable turn-on behavior in high-speed PWM circuits.

Can DMT2004UFG-13 be used in parallel configurations?

Yes-its positive temperature coefficient of R_DS(ON) (normalized R_DS(ON) increases with junction temperature, per Figure 6) enables inherent current sharing. Successful parallel operation requires matched layout symmetry, equal gate drive impedance, and shared thermal mass to avoid thermal runaway.

Is the PowerDI3333-8 package compatible with standard reflow profiles?

Yes-the device is qualified for IPC/JEDEC J-STD-020 moisture sensitivity Level 1 and supports standard Pb-free reflow profiles (peak 260°C). Its 0.8mm profile and matte tin finish ensure reliable solder joint formation without tombstoning or voiding when using recommended pad layout from Diodes' package outline document DS38956.