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Diodes Incorporated DMT2004UFV-13
- Part No.:
- DMT2004UFV-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerVDFN
- Datasheet:
-
DMT2004UFV-13.pdf
- Description:
- MOSFET N-CH 24V 70A POWERDI3333
- Quantity:
- Payment:
- Shipping:
Inventory:2,218
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Product details
Overview
DMT2004UFV-13 from Diodes Incorporated is an N-channel enhancement-mode MOSFET in PowerDI3333-8 (Type UX) package, rated for 24 V VDSS, 5.0 mΩ RDS(ON) @ 10 V VGS, and 70 A continuous drain current at TC = +25°C. It serves as a high-current, low-loss power switch in synchronous buck converters and LED backlight drivers.
For engineers reviewing the DMT2004UFV-13 datasheet, DMT2004UFV-13 pinout, DMT2004UFV-13 application, or DMT2004UFV-13 equivalent, key selection criteria include RDS(ON) at 4.5 V gate drive, thermal resistance RθJC = 3.5 °C/W, UIS ruggedness (26 A avalanche current), and compact 3.3 mm × 3.3 mm footprint enabling high-density DC-DC designs.
Technical Context
This MOSFET employs trench-gate silicon technology optimized for low on-resistance while maintaining fast switching performance. Its gate threshold voltage (0.55–1.45 V) supports logic-level drive compatibility with 3.3 V and 5 V controllers.
The device integrates a robust body diode with 1.0 V forward voltage at 2 A and exhibits 53.7 nC total gate charge at 10 V, balancing drive strength and switching loss in high-frequency power stages up to 1 MHz.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 24 V - Maximum blocking voltage for 24 V input rail applications |
| RDS(ON) @ 10 V | 5.0 mΩ - Enables <1 W conduction loss at 70 A in thermally optimized layouts |
| RDS(ON) @ 4.5 V | 6.5 mΩ - Ensures usable on-state performance with standard 5 V gate drivers |
| ID (continuous) | 70 A @ TC = +25°C - Supports high-current power stages without paralleling |
| RθJC | 3.5 °C/W - Allows direct thermal coupling to heatsink or PCB copper for >100 W dissipation |
| EAS | 36 mJ - Withstands repetitive inductive turn-off stress in DC-DC converter freewheeling |
| Qg @ 10 V | 53.7 nC - Determines gate driver current requirement (~5 mA avg. at 100 kHz) |
Pinout & Package
Package: PowerDI3333-8 (Type UX), surface-mount, thermally enhanced with exposed drain pad. Dimensions: 3.3 mm × 3.3 mm × 0.8 mm, 33% board area vs. SO-8.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source | Four parallel source terminals reduce bond wire inductance and improve current sharing |
| 5, 6, 7, 8 | Drain | Eight-pin drain configuration connects directly to exposed thermal pad for low RθJC |
| G (Pin 1 top view marking) | Gate | Single gate terminal located adjacent to source for minimized gate loop inductance |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(ON) at 4.5 V | 6.5 mΩ enables efficient operation with 5 V microcontroller GPIOs without level-shifting |
| Thermally optimized package | PowerDI3333-8 delivers 3.5 °C/W RθJC, outperforming SO-8 by >50% in junction-to-case thermal resistance |
| 100% UIS tested | Each unit passes unclamped inductive switching test to 26 A/36 mJ, ensuring reliability in hard-switched topologies |
| Green, RoHS-compliant construction | Halogen- and antimony-free molding compound (<900 ppm Br+Cl, <1000 ppm Sb) meets IPC-1752A Class 3 |
Applications
| LED Backlight Driver | Synchronous Buck Converter |
|---|---|
Use Scenario: Driving 4–8 series white LEDs in automotive instrument clusters with 24 V input. IC Role / Device Role: High-side PWM switch controlling LED current in boost/buck-boost topology. Use Value: 5.0 mΩ RDS(ON) limits conduction loss to <800 mW at 40 A peak, reducing thermal load on display module PCB. | Use Scenario: Main power switch in 12 V → 1.2 V VRM for FPGA core supply. IC Role / Device Role: High-current, low-RDS(ON) synchronous rectifier in 500 kHz buck stage. Use Value: 6.5 mΩ @ 4.5 V allows direct drive from PWM controller, eliminating gate driver IC and saving 22 mm² board area. |
| USB-C PD Power Path | Industrial Motor Driver Half-Bridge |
Use Scenario: Input protection and power path selection in 20 V/5 A USB-C PD sink designs. IC Role / Device Role: Reverse-voltage and overcurrent protected high-side switch upstream of DC-DC regulator. Use Value: 24 V VDSS and 70 A rating support full 100 W PD3.0 operation with margin; 36 mJ EAS handles hot-plug transients. | Use Scenario: Low-side switch in 24 V brushed DC motor H-bridge for factory automation actuators. IC Role / Device Role: Fast-turning, avalanche-rugged switch handling 45 A stall current and inductive kickback. Use Value: 26 A IAS and 36 mJ EAS ensure single-pulse survival during motor stall recovery without external snubbers. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMTH2004LPS-13 | Same die, PowerDI5060 package (5.0 mm × 6.0 mm); RθJA = 40 °C/W vs. 54 °C/W (FR-4, 2 oz Cu) | Higher power dissipation capability but 3.6× larger footprint; suited for lower-frequency, higher-PD designs | Select when thermal budget exceeds 2.3 W and board space permits larger package |
| SI2304DDS-T1-GE3 | SO-8 package; 30 V VDSS, 35 mΩ @ 4.5 V, 5.3 A ID; no UIS rating specified | Limited to ≤6 A loads; lacks avalanche ruggedness and thermal performance for high-current DC-DC | Only suitable for low-power auxiliary rails where RDS(ON) and ruggedness are secondary |
Compared with DMTH2004LPS-13 and SI2304DDS-T1-GE3, DMT2004UFV-13 uniquely balances ultra-low RDS(ON), compact size, and production-tested UIS robustness-making it optimal for space-constrained, high-efficiency 24 V power conversion where thermal density and transient immunity are critical.
Availability
DMT2004UFV-13 is available at Aetrix Electronics and suitable for LED backlighting, DC-DC converters, and USB-C PD power path management requiring stable component supply across industrial and automotive production programs.
Supply support for DMT2004UFV-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design and manufacturing operations across Asia and the Americas.
The Power MOSFET product line-including the DMT2004UFV-targets high-efficiency, high-density power conversion in consumer, computing, and industrial systems, emphasizing low RDS(ON), thermal performance, and production-grade ruggedness.
FAQ
What is the maximum safe operating temperature for DMT2004UFV-13?
The junction temperature must not exceed +150°C under any condition. At TC = +70°C, the continuous drain current derates to 55 A. Thermal design must account for RθJC = 3.5 °C/W and use the exposed drain pad for heat transfer to PCB copper or external heatsink.
Does DMT2004UFV-13 support 3.3 V gate drive?
Yes-the gate threshold voltage ranges from 0.55 V to 1.45 V, and RDS(ON) is specified down to 10.0 mΩ at VGS = 2.5 V. At 3.3 V, typical RDS(ON) is ~7.5 mΩ, enabling functional operation with 3.3 V logic, though 4.5 V or higher is recommended for full 60 A rating.
How is the PowerDI3333-8 (Type UX) package mounted for optimal thermal performance?
Mount using the recommended pad layout: 2.37 mm × 3.70 mm exposed drain pad with ≥4 thermal vias (0.3 mm diameter, spaced ≤1 mm apart) connecting to inner-layer or backside copper pour. Minimum 2 oz copper on both sides is required to achieve RθJA = 54 °C/W per datasheet Note 6.
Is DMT2004UFV-13 suitable for automotive applications?
It meets AEC-Q101 stress test requirements per Diodes Incorporated qualification reports and operates from –55°C to +150°C. However, automotive use requires system-level validation including PPAP, failure mode analysis, and compliance with ISO/TS 16949; consult Diodes' automotive product documentation for qualified part numbers.
DMT2004UFV-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerVDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 24 V
- Current - Continuous Drain (Id) @ 25°C:
- 70A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 5mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id:
- 1.45V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 53.7 nC @ 10 V
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1683 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.2W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerDI3333-8 (Type UX)
DMT2004UFV-13 FAQ
1.How can I place an order for DMT2004UFV-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMT2004UFV-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMT2004UFV-13 reliable?
The price and inventory of DMT2004UFV-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT2004UFV-13 is usually 5 days.
3.What payment methods are accepted for DMT2004UFV-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT2004UFV-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMT2004UFV-13?
DMT2004UFV-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMT2004UFV-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMT2004UFV-13?
For technical support, including DMT2004UFV-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT2004UFV-13 requirements.
6.How does Aetrix verify that DMT2004UFV-13 is sourced from the original manufacturer or authorized distributors?
All DMT2004UFV-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT2004UFV-13 meets industry standards.
7.What is the process for return or replacement of DMT2004UFV-13?
All DMT2004UFV-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMT2004UFV-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMT2004UFV-13 part is unused and in its original packaging.
Return procedure for DMT2004UFV-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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