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Diodes Incorporated DMT2005UDV-13
- Part No.:
- DMT2005UDV-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 8-PowerVDFN
- Datasheet:
-
DMT2005UDV-13.pdf
- Description:
- MOSFET 2N-CH 24V 50A PWRDI3333
- Quantity:
- Payment:
- Shipping:
Inventory:9,347
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Product details
Overview
DMT2005UDV-13 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in PowerDI3333-8 (UXC) package, rated for 24V VDSS, 7mΩ RDS(ON) @ 10VGS, and 50A continuous drain current at TC = +25°C. It serves as a high-efficiency synchronous rectifier or load switch in DC-DC converters and battery-powered power management circuits.
For engineers reviewing the DMT2005UDV-13 datasheet, DMT2005UDV-13 pinout, DMT2005UDV-13 application, or DMT2005UDV-13 equivalent, key selection criteria include low RDS(ON) at 4.5VGS (8mΩ), fast switching (tF = 23.3ns), dual-channel integration in a thermally enhanced 8-pin exposed-drain package, and compliance with RoHS 3 and halogen-free "Green" standards.
Technical Context
This dual MOSFET integrates two independent N-channel silicon devices sharing a common thermal pad, optimized for high-current, low-voltage switching where conduction loss minimization and gate drive compatibility with 3.3V/5V logic are critical. Its gate threshold voltage (0.5–1.5V) enables robust turn-on with standard logic-level drivers.
The device features integrated gate protection diodes per channel, low input capacitance (Ciss = 2060pF), and a reverse transfer capacitance (Crss = 517pF) that supports stable high-frequency operation up to several MHz in buck converter topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 24V - Maximum blocking voltage across drain-source, suitable for 12V and 20V rail applications. |
| RDS(ON) @ 10VGS | 7mΩ max - Enables <100mW conduction loss at 37A, critical for high-efficiency power stages. |
| RDS(ON) @ 4.5VGS | 8mΩ max - Ensures full enhancement with 4.5V logic-level gate drive, eliminating need for level shifters. |
| Qg @ 10VGS | 46.7nC - Determines gate driver power requirement and switching loss trade-off in PWM operation. |
| tF | 23.3ns - Fast fall time reduces transition losses and EMI generation in high-frequency switching. |
| RθJC | 4.8°C/W - Low junction-to-case thermal resistance allows >1.9W dissipation with minimal heatsinking on PCB copper. |
| ID (continuous) | 50A @ TC = +25°C - Supports high-current loads such as motor drivers and USB PD power paths. |
Pinout & Package
Package: PowerDI3333-8 (Type UXC), surface-mount, thermally enhanced with exposed drain pad (D1/D2) for efficient heat transfer to PCB ground plane.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| PIN1 (Top View) | Drain 1 (D1) | Primary current-carrying terminal for Channel 1; electrically tied to exposed drain pad. |
| PIN2 | Source 1 (S1) | Return path for Channel 1; referenced to gate drive ground for low-side configuration. |
| PIN3 | Gate 1 (G1) | Control input for Channel 1; includes integrated gate protection diode to VDD. |
| PIN4 | Drain 2 (D2) | Primary current-carrying terminal for Channel 2; electrically tied to same exposed drain pad as D1. |
| PIN5 | Source 2 (S2) | Return path for Channel 2; isolated from S1 to support independent half-bridge or dual-switch configurations. |
| PIN6 | Gate 2 (G2) | Control input for Channel 2; independently protected with dedicated gate diode. |
| PIN7 & PIN8 | Exposed Drain Pad | Thermal and electrical connection point for both drains; must be soldered to large copper area for thermal performance. |
Key Features
| Feature | Design Value |
|---|---|
| Dual N-channel integration | Reduces board space by 40% vs. discrete dual-MOSFET solutions while maintaining channel isolation. |
| Low RDS(ON) at 3.7VGS | 10mΩ max enables reliable operation with 3.3V microcontroller GPIOs without external drivers. |
| Low Coss (547pF) | Minimizes capacitive switching loss and improves light-load efficiency in adaptive frequency controllers. |
| Halogen- and antimony-free "Green" construction | Meets IPC-1752A Class 3 reporting requirements and supports automotive PPAP documentation. |
| Moisture Sensitivity Level 1 | Eliminates bake requirements prior to reflow, reducing manufacturing cost and cycle time. |
Applications
| USB-C Power Delivery Switch | High-Density DC-DC Converter |
|---|---|
Use Scenario: Bidirectional 20V/5A power path control in portable chargers and docking stations. IC Role / Device Role / Timing Role: Dual-channel load switch managing VBUS routing and reverse current blocking. Use Value: 8mΩ RDS(ON) at 4.5VGS limits voltage drop to <40mV at 5A, preserving USB PD voltage regulation margin. | Use Scenario: Synchronous rectification in 12V→3.3V buck converters for FPGA and SoC power rails. IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diodes to reduce conduction loss. Use Value: 7mΩ RDS(ON) cuts rectifier loss by >65% vs. 40V/5A Schottky, improving full-load efficiency from 88% to 93%. |
| Battery Protection Circuit | Industrial I/O Module |
Use Scenario: Overcurrent and short-circuit protection in 2-cell Li-ion battery packs (8.4V max). IC Role / Device Role / Timing Role: High-side current-sense switch with fast fault response via gate-controlled shutdown. Use Value: 23.3ns tF enables sub-100ns current-limit reaction, preventing cell damage during hard shorts. | Use Scenario: Solid-state relay replacement for 24V PLC digital output modules. IC Role / Device Role / Timing Role: Dual-channel power switch driving solenoids and indicator LEDs with independent control. Use Value: Dual-channel isolation allows independent timing of two 24V loads, eliminating cross-talk in multi-function I/O cards. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMT6005LSD-13 | Higher VDSS (60V), higher RDS(ON) (12mΩ @ 10VGS), same PowerDI3333-8 package. | Suitable for 48V industrial systems but less efficient at 12V due to higher conduction loss. | Select when higher voltage margin is required and 24V rating is insufficient. |
| SI6926ADQ-T1-GE3 | Lower VDSS (20V), lower RDS(ON) (5.5mΩ @ 4.5VGS), different SO-8 package with no exposed drain pad. | Better for ultra-low-voltage logic-level designs but lacks thermal capability for >30A continuous operation. | Select when operating below 16V and PCB thermal relief is limited. |
Compared with DMT6005LSD-13 and SI6926ADQ-T1-GE3, DMT2005UDV-13 uniquely balances 24V rating, 7mΩ conduction loss, and PowerDI3333-8 thermal performance-making it optimal for compact, high-current 12–20V power management where both efficiency and thermal headroom are constrained.
Availability
DMT2005UDV-13 is available at Aetrix Electronics and suitable for USB-C power delivery systems, high-density DC-DC converters, and industrial I/O modules requiring stable component supply and long-term production continuity.
Supply support for DMT2005UDV-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design and manufacturing operations across Asia and the Americas.
This part belongs to Diodes' PowerMOS™ family, engineered specifically for high-efficiency, high-current switching in space-constrained power management systems-including portable electronics, industrial controls, and automotive body electronics.
FAQ
What is the maximum continuous drain current for DMT2005UDV-13 at 70°C case temperature?
The datasheet specifies 40A continuous drain current at TC = +70°C with VGS = 10V. This derating reflects thermal limitations of the PowerDI3333-8 package under real-world PCB thermal conditions-not ambient temperature. Derated current must be verified using actual board layout and copper area per Diodes' recommended pad design.
Does DMT2005UDV-13 support parallel operation of its two channels for higher current handling?
No-channels are electrically isolated but share a common drain pad and thermal node. Parallel use would cause unequal current sharing due to parametric mismatch and thermal coupling, risking hot-spot formation. Each channel must be driven and loaded independently per the datasheet's safe operating area curves.
Can DMT2005UDV-13 be used in linear mode (e.g., as a pass transistor)?
It is not characterized or rated for linear operation. The Safe Operating Area (SOA) graph shows only pulsed and DC boundaries up to 10s, with no linear region defined. Using it in saturation or analog regulation risks thermal runaway due to positive temperature coefficient of RDS(ON) and lack of SOA validation beyond switching duty cycles.
What is the significance of the "TD5" marking on the bottom of the DMT2005UDV-13 package?
"TD5" is Diodes Incorporated's internal product type code for this specific dual N-channel MOSFET variant in the PowerDI3333-8 (UXC) package. It distinguishes DMT2005UDV from other devices in the DMT20xx series and confirms correct die revision and process lot traceability per JESD47 reliability testing protocols.
DMT2005UDV-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerVDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 24V
- Current - Continuous Drain (Id) @ 25°C:
- 50A (Tc)
- Rds On (Max) @ Id, Vgs:
- 7mOhm @ 14A, 10V
- Vgs(th) (Max) @ Id:
- 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 46.7nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2060pF @ 10V
- Power - Max:
- 900mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerDI3333-8 (Type UXC)
DMT2005UDV-13 FAQ
1.How can I place an order for DMT2005UDV-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMT2005UDV-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMT2005UDV-13 reliable?
The price and inventory of DMT2005UDV-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT2005UDV-13 is usually 5 days.
3.What payment methods are accepted for DMT2005UDV-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT2005UDV-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMT2005UDV-13?
DMT2005UDV-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMT2005UDV-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMT2005UDV-13?
For technical support, including DMT2005UDV-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT2005UDV-13 requirements.
6.How does Aetrix verify that DMT2005UDV-13 is sourced from the original manufacturer or authorized distributors?
All DMT2005UDV-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT2005UDV-13 meets industry standards.
7.What is the process for return or replacement of DMT2005UDV-13?
All DMT2005UDV-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMT2005UDV-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMT2005UDV-13 part is unused and in its original packaging.
Return procedure for DMT2005UDV-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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