Diodes Incorporated DMT2005UDV-7

Overview

DMT2005UDV-7 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in PowerDI3333-8 (Type UXC) package, rated for 24 V V_DSS, 7 mΩ R_DS(ON) @ 10 V_GS, and 50 A continuous drain current at T_C = +25°C. It integrates two independent power switches with gate protection diodes, optimized for high-efficiency power management and analog switching in compact DC-DC converters and load-switching circuits.

For engineers reviewing the DMT2005UDV-7 datasheet, DMT2005UDV-7 pinout, DMT2005UDV-7 application, or DMT2005UDV-7 equivalent, key selection criteria include its dual-channel layout, low R_DS(ON) at 4.5 V_GS (8 mΩ), fast switching (t_F = 23.3 ns), thermal resistance of 4.8 °C/W (junction-to-case), and RoHS-compliant matte tin-plated leadframe.

Technical Context

This dual MOSFET implements two independent N-channel silicon devices in a single exposed-drain PowerDI3333-8 package, each with integrated gate protection diodes to suppress transient overvoltage. Its threshold voltage range (0.5–1.5 V) enables reliable turn-on from 3.3 V and 5 V logic rails.

The device delivers low dynamic losses via C_iss = 2060 pF, C_oss = 547 pF, and Q_g = 46.7 nC (at 10 V_GS), supporting high-frequency synchronous rectification and PWM-based power control up to several hundred kHz without excessive drive loss.

Key Specifications

Pinout & Package

Package: PowerDI3333-8 (Type UXC), surface-mount, thermally enhanced with exposed drain pad. Molded plastic case meets UL 94V-0; moisture sensitivity level 1 per J-STD-020.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel MOSFET applications.

Compared with DMT6004LSD-13 and SI6926ADQ-T1-GE3, the DMT2005UDV-7 offers superior thermal resistance (R_θJC = 4.8 °C/W), integrated gate protection, and documented 26 A/34 mJ avalanche capability-critical for inductive load reliability in constrained industrial and automotive layouts.

Availability

DMT2005UDV-7 is available at Aetrix Electronics and suitable for USB-C power delivery modules, industrial PLC output stages, and automotive body control units requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for DMT2005UDV-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for industrial, computing, and automotive markets.

The DMT2005UDV belongs to Diodes' PowerMOS™ dual-MOSFET product line, engineered for space-constrained, high-current switching applications where thermal performance, gate drive simplicity, and ruggedness are design-critical.

FAQ

What is the maximum safe operating junction temperature for DMT2005UDV-7?

The absolute maximum junction temperature is +150°C, and the device is characterized for R_DS(ON) variation and gate threshold stability across –55°C to +150°C. Thermal design must ensure T_J remains below this limit under worst-case power dissipation, using the specified R_θJC = 4.8 °C/W and appropriate PCB copper area or heatsinking.

Does DMT2005UDV-7 support 3.3 V logic-level gate drive?

Yes-the gate threshold voltage is specified from 0.5 V to 1.5 V, and R_DS(ON) is guaranteed at V_GS = 3.7 V (10 mΩ max). At 3.3 V, typical R_DS(ON) is ~11.5 mΩ, enabling functional switching in 3.3 V microcontroller-driven load-switch applications with acceptable conduction loss.

How is the exposed drain pad electrically configured in the PowerDI3333-8 package?

The exposed drain pad is internally connected to both D1 and D2 terminals and serves as the primary thermal and electrical return path. It must be soldered to a large, low-impedance PCB copper pour to achieve rated power dissipation and thermal resistance. No isolation or floating connection is permitted-it is not a separate terminal.

Can DMT2005UDV-7 be used in linear (analog) regulation mode?

No-it is optimized for switching operation only. The Safe Operating Area (SOA) curve shows limited DC capability (≤1 A at 20 V), and R_DS(ON) variation with temperature introduces instability in linear biasing. For analog pass elements, dedicated LDOs or linear MOSFETs with SOA-rated derating should be used instead.