Diodes Incorporated DMT3002LPS-13

Overview

DMT3002LPS from Diodes Incorporated is a 30V N-channel enhancement-mode power MOSFET in PowerDI5060-8 (Type K) package, rated for 240A continuous drain current at TC = +25°C, with R_DS(ON) = 1.25 mΩ @ V_GS = 10V and 2.0 mΩ @ V_GS = 4.5V, optimized for high-efficiency DC-DC converters and low-voltage load switching in automotive and industrial power systems.

For engineers reviewing the DMT3002LPS datasheet, DMT3002LPS pinout, DMT3002LPS application, or DMT3002LPS equivalent, key selection criteria include its ultra-low on-resistance, thermally efficient exposed-drain package, AEC-Q101 qualification, fast switching performance (t_D(ON) = 21 ns), and body diode recovery characteristics (t_RR = 44 ns, Q_RR = 52 nC).

Technical Context

This MOSFET employs trench-gate silicon technology to achieve sub-1.3 mΩ R_DS(ON) at 10V gate drive while maintaining robust avalanche capability (E_AS = 700 mJ, I_AS = 15 A) and low gate charge (Q_G = 77 nC @ 10V). Its PowerDI5060-8 (Type K) package integrates an exposed drain pad for direct thermal coupling to PCB copper, enabling junction-to-case thermal resistance of just 1.1°C/W.

The device features a gate threshold voltage of 1–2 V (V_GS(TH)), supports logic-level drive down to 4.5V, and delivers stable on-resistance across –55°C to +150°C (normalized R_DS(ON) variation <1.8× over temperature). Its low C_ISS (5000 pF) and C_RSS (300 pF) support high-frequency synchronous rectification.

Key Specifications

Pinout & Package

Package: PowerDI5060-8 (Type K), surface-mount, thermally enhanced with exposed drain pad (8-terminal configuration). Dimensions: 5.15 × 6.15 × 1.0 mm (max height), 0.097 g weight, UL 94V-0 molding compound.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IPB017N10N5 and SIJN300DP-T1-GE3, DMT3002LPS offers the lowest R_DS(ON) and best thermal performance in its class, making it optimal for 200A+ automotive and server power stages where conduction loss and junction temperature are critical constraints.

Availability

DMT3002LPS is available at Aetrix Electronics and suitable for automotive power conversion, industrial load switching, and high-density server VRMs requiring stable component supply, long-lifecycle assurance, and AEC-Q101 compliance.

Supply support for DMT3002LPS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-performance power management, signal integrity, and protection solutions for automotive, industrial, and computing markets.

The DMT3002LPS belongs to Diodes' Power MOSFET product line, engineered specifically for ultra-low R_DS(ON) and high-current switching in next-generation automotive and datacenter power systems.

FAQ

What is the maximum continuous drain current for DMT3002LPS at 100°C case temperature?

At T_C = +100°C, the maximum continuous drain current is derated to 160A based on the device's thermal resistance (R_θJC = 1.1°C/W) and maximum junction temperature of 150°C. This value is derived from the linear derating curve in the datasheet's "Maximum Ratings" table, where current scales inversely with temperature rise above 25°C.

Can DMT3002LPS be driven directly by a 3.3V microcontroller GPIO?

No - the gate threshold voltage (V_GS(TH)) is 1–2V, but full enhancement requires ≥4.5V for R_DS(ON) ≤2.5 mΩ. At 3.3V, R_DS(ON) exceeds 4 mΩ, causing excessive conduction loss. A dedicated gate driver or level shifter is required for reliable 3.3V logic interface.

Is the exposed drain pad electrically isolated from other terminals?

No - the exposed drain pad is internally connected to pins 1, 4, 5, 6, 7, and 8 (all drain terminals). It must be soldered to a PCB copper pour tied to the drain net and cannot serve as a thermal pad only; isolation would cause catastrophic shorting if misrouted.

Does DMT3002LPS support paralleling for higher current capacity?

Yes - its positive temperature coefficient of R_DS(ON) (see Figure 6) ensures inherent current sharing when paralleled. However, matched gate drive layout, symmetrical PCB traces, and individual gate resistors are mandatory to prevent oscillation and uneven dynamic current distribution.