Diodes Incorporated DMT3003LFG-13

Overview

DMT3003LFG-13 from Diodes Incorporated is a 30V N-channel enhancement-mode MOSFET in PowerDI^®3333-8 package, optimized for high-efficiency DC-DC converters and power management. It delivers R_DS(ON) of 3.2 mΩ @ V_GS = 10 V (100 A I_D), 5.5 mΩ @ V_GS = 4.5 V (85 A), with 100% UIS-rated avalanche capability and AEC-Q101 qualification for automotive-grade reliability.

For engineers reviewing the DMT3003LFG-13 datasheet, DMT3003LFG-13 pinout, DMT3003LFG-13 application, or DMT3003LFG-13 equivalent, key selection criteria include low R_DS(ON) at 4.5 V gate drive, thermally efficient PowerDI3333-8 footprint, Q_GD × R_DS(ON) figure-of-merit for switching loss optimization, and AEC-Q101 qualification for automotive power stages.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve ultra-low on-resistance while maintaining fast switching characteristics. Its R_DS(ON) remains stable across -55°C to +150°C junction temperature, and its Q_G = 44 nC (V_GS = 10 V) and Q_GD = 8 nC support high-frequency synchronous buck operation.

The device integrates a robust body diode with t_RR = 25 ns and Q_RR = 37 nC, enabling reliable reverse recovery in hard-switched topologies. Thermal resistance R_θJC = 2°C/W and exposed drain pad design allow 62 W power dissipation at T_C = +25°C, supporting high-current density PCB layouts.

Key Specifications

Pinout & Package

Package: PowerDI^®3333-8 - thermally enhanced 8-pin surface-mount package with exposed drain pad for low-junction-to-case thermal resistance (R_θJC = 2°C/W). Dimensions: 3.30 mm × 3.30 mm × 0.80 mm (L × W × H), 0.65 mm pitch.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with DMTH3003LPS-13 and IPB033N04LGATMA1, DMT3003LFG-13 uniquely balances ultra-low R_DS(ON), compact footprint, and AEC-Q101 qualification - making it optimal for space-constrained, high-reliability automotive DC-DC stages where thermal interface to PCB is preferred over discrete heatsinks.

Availability

DMT3003LFG-13 is available at Aetrix Electronics and suitable for automotive power modules, LCD backlight drivers, and industrial DC-DC converters requiring stable component supply, AEC-Q101 compliance, and high-current density packaging.

Supply support for DMT3003LFG-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-performance power management, signal integrity, and protection solutions for automotive, industrial, and consumer markets.

This MOSFET belongs to Diodes' Power MOSFET product line, engineered specifically for high-efficiency, high-reliability power conversion in automotive and industrial environments where low R_DS(ON), small form factor, and AEC-Q101 qualification are mandatory.

FAQ

What is the maximum continuous drain current at T_C = +70°C?

The DMT3003LFG-13 supports 90 A continuous drain current at case temperature +70°C, as specified in the Absolute Maximum Ratings table. This derating from 100 A at +25°C reflects thermal limits of the PowerDI3333-8 package and must be validated against actual PCB copper area and airflow in the target application.

Does this MOSFET require gate resistors for stability in high-frequency switching?

Yes - although the device has an internal gate resistance of 0.6 Ω, external gate resistors (typically 2–10 Ω) are recommended to damp ringing and control dV/dt during hard switching. The low Q_GD (8 nC) and fast t_F (8 ns) make gate drive impedance critical for EMI control above 500 kHz.

Is the body diode suitable for synchronous rectification in continuous conduction mode?

No - the integrated body diode has t_RR = 25 ns and Q_RR = 37 nC, which causes significant reverse recovery loss in CCM operation. For synchronous rectification, external Schottky or actively driven MOSFETs are required; this device is intended as a controlled switch, not a freewheeling diode.

How does the PowerDI3333-8 package compare thermally to SO-8 for PCB-level cooling?

The PowerDI3333-8 achieves R_θJC = 2°C/W versus ~3.5°C/W for standard SO-8 due to its larger exposed drain pad and optimized internal thermal path. When mounted on 2 oz copper with thermal vias to inner layers, it delivers ~30% lower junction temperature rise at 20 A, enabling higher power density without forced air.