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Diodes Incorporated DMT3003LFG-7
- Part No.:
- DMT3003LFG-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerVDFN
- Datasheet:
-
DMT3003LFG-7.pdf
- Description:
- MOSFET N-CH 30V 22A PWRDI3333
- Quantity:
- Payment:
- Shipping:
Inventory:4,968
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Product details
Overview
DMT3003LFG-7 from Diodes Incorporated is a 30V N-channel enhancement-mode MOSFET in PowerDI®3333-8 package, rated for 100A continuous drain current at TC = +25°C, with RDS(ON) = 3.2 mΩ @ VGS = 10V and 5.5 mΩ @ VGS = 4.5V. It delivers high-efficiency power switching in DC-DC converters, backlighting, and power management circuits where low conduction loss and fast switching are critical.
For engineers reviewing the DMT3003LFG-7 datasheet, DMT3003LFG-7 pinout, DMT3003LFG-7 application, or DMT3003LFG-7 equivalent, this device offers AEC-Q101 qualification, 100% UIS avalanche rating, thermally efficient PowerDI3333-8 packaging, and verified gate charge (QG = 44 nC @ VGS = 10V) for precise PWM control in automotive and industrial power stages.
Technical Context
This MOSFET employs trench-gate silicon technology optimized for low RDS(ON) × QGD figure-of-merit (FOM), enabling high-frequency operation with minimal switching losses. Its gate threshold voltage (VGS(TH) = 1–3 V) supports robust 3.3V/5V logic-level drive compatibility.
The device features an integrated body diode with tRR = 25 ns and QRR = 37 nC, suitable for synchronous rectification and freewheeling in buck and half-bridge topologies. Thermal resistance RθJC = 2 °C/W ensures effective heat transfer to PCB copper via the exposed drain pad.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30 V - Maximum blocking voltage for 12V/24V automotive and industrial bus applications |
| RDS(ON) | 3.2 mΩ @ VGS = 10V - Enables <1.2 W conduction loss at 20A, critical for thermal budget in compact DC-DC modules |
| ID (continuous) | 100 A @ TC = +25°C - Supports high-current power stages without external heatsinking when mounted on 2 oz copper |
| QG | 44 nC @ VGS = 10V - Determines gate drive power requirement and switching speed in 500 kHz–1 MHz converters |
| EAS | 250 mJ - Confirmed single-pulse avalanche energy rating ensures ruggedness during inductive load transients |
| RθJC | 2 °C/W - Low junction-to-case resistance enables direct thermal coupling to PCB ground plane for passive cooling |
| tRR | 25 ns - Fast body diode recovery reduces cross-conduction loss and EMI in synchronous rectifiers |
Pinout & Package
Package: PowerDI®3333-8 - Thermally enhanced surface-mount package with exposed drain pad; 33% board area vs. SO-8; UL 94V-0 molded compound; moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source (S) | Common source connection for internal parallel FET cells; low-inductance multi-pin layout minimizes source loop inductance |
| 5, 6, 7, 8 | Drain (D) | Exposed drain pad and four drain terminals provide low-resistance path to PCB thermal plane; handles >95% of power dissipation |
| Gate (G) | Control input | Single-pin gate (Pin 3 in top-view marking diagram) accepts standard CMOS/TTL drive; RG = 0.6 Ω limits ringing |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(ON) × QGD FOM | Optimized for high-frequency DC-DC converters: reduces combined conduction + switching loss below 1.5 W at 1 MHz, 12V input, 5A output |
| AEC-Q101 qualified | Validated for automotive powertrain and body electronics per stress test requirements including HTOL, TC, HTRB, and UHAST |
| 100% UIS rated | Guaranteed avalanche capability up to IAS = 16 A and EAS = 250 mJ eliminates need for external snubbers in inductive switching |
| Green, halogen-free construction | <900 ppm Br, <900 ppm Cl, <1000 ppm Sb - meets automotive OEM chemical compliance standards (e.g., GMW3172, Ford WSS-M99P9999-A1) |
| PowerDI3333-8 footprint | Enables 33% smaller PCB area than SO-8 while delivering 2.5× higher current density and 3× lower RθJA (52 °C/W vs. ~150 °C/W for SO-8) |
Applications
| Automotive LED Headlamp Driver | Industrial 48V DC-DC Buck Converter |
|---|---|
|
Use Scenario: High-brightness LED array switched at 200 kHz in adaptive driving beam (ADB) systems. IC Role / Device Role / Timing Role: Primary high-side switch controlling LED current with PWM dimming; operates in hard-switched buck topology. Use Value: 3.2 mΩ RDS(ON) limits conduction loss to <1.3 W at 20A, enabling fanless headlamp design; AEC-Q101 qualification ensures reliability over 15-year vehicle life. |
Use Scenario: 48V-to-12V step-down converter supplying power to infotainment and ADAS ECUs. IC Role / Device Role / Timing Role: Synchronous rectifier in secondary side of isolated forward converter; driven by dedicated gate driver IC. Use Value: 25 ns tRR and 37 nC QRR reduce reverse recovery loss by >40% vs. standard MOSFETs, improving efficiency from 92% to 94.5% at full load. |
| Laptop VRM Phase Switch | Server PMBus-Controlled POL Module |
|
Use Scenario: Multiphase CPU voltage regulator delivering up to 120A at 1.0V with 300 kHz switching. IC Role / Device Role / Timing Role: Low-side synchronous switch in interleaved buck phase leg; gate driven by integrated controller. Use Value: 5.5 mΩ RDS(ON) @ VGS = 4.5V ensures compatibility with 5V gate drive; PowerDI3333-8's low RθJC = 2 °C/W maintains TJ < 105°C under sustained load. |
Use Scenario: Digital point-of-load module compliant with PMBus 1.3, delivering 60A at 0.8V to FPGA core rails. IC Role / Device Role / Timing Role: High-current power stage switch operating at 600 kHz with digital current sensing and thermal monitoring. Use Value: 100% UIS rating allows safe operation during transient overload events (e.g., FPGA configuration surge); RoHS/halogen-free status satisfies server OEM environmental mandates. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMT3004LFG-7 | RDS(ON) = 4.0 mΩ @ 10V (vs. 3.2 mΩ); same PowerDI3333-8 package and AEC-Q101 rating | Slightly higher conduction loss; preferred where cost sensitivity outweighs 0.8 mΩ RDS(ON) gain | Select for cost-optimized automotive body electronics where peak current ≤ 85A suffices |
| IPB033N04LGATMA1 (Infineon) | 40V VDSS, RDS(ON) = 3.3 mΩ @ 10V, PG-HSOF-8 package; no AEC-Q101 documentation in public datasheet | Higher voltage margin but unverified automotive qualification; different thermal pad layout requires PCB redesign | Consider only for industrial 40V systems requiring extended VDSS; avoid for automotive unless AEC-Q101 requalification is performed |
Compared with DMT3003LFG-7, DMT3004LFG-7 trades 25% higher RDS(ON) for lower unit cost, while IPB033N04LGATMA1 offers wider voltage headroom but lacks documented automotive qualification and introduces layout risk due to non-identical thermal pad geometry.
Availability
DMT3003LFG-7 is available at Aetrix Electronics and suitable for automotive LED drivers, industrial DC-DC converters, and server point-of-load modules requiring stable component supply, long-term lifecycle support, and AEC-Q101-compliant sourcing.
Supply support for DMT3003LFG-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and the Americas.
This device belongs to Diodes' Power MOSFET product line, engineered specifically for high-efficiency, high-density power conversion in automotive, computing, and industrial applications where thermal performance and reliability are mission-critical.
FAQ
What is the maximum recommended gate-source voltage for DMT3003LFG-7?
The absolute maximum VGS is ±20 V per the datasheet. For reliable long-term operation, gate drive should be limited to +10 V to +15 V for turn-on and –5 V to 0 V for turn-off. Exceeding +15 V increases gate oxide stress without reducing RDS(ON) meaningfully, while negative bias improves noise immunity in high-dv/dt environments.
Can DMT3003LFG-7 be used in parallel configurations?
Yes - its positive temperature coefficient of RDS(ON) (normalized RDS(ON) rises with junction temperature, per Figure 6) enables inherent current sharing. Successful parallel operation requires matched gate drive impedance, symmetrical PCB layout, and shared thermal plane. Derate total current by 15% versus single-device rating to account for layout-induced imbalances.
Is the PowerDI3333-8 package lead-free and RoHS-compliant?
Yes - DMT3003LFG-7 uses matte tin annealed over copper leadframe, fully compliant with EU RoHS Directive 2011/65/EU and Diodes' "Green" specification (<900 ppm Br, <900 ppm Cl, <1000 ppm Sb). The molding compound is halogen- and antimony-free, and UL 94V-0 rated.
Does DMT3003LFG-7 require a gate resistor for stability?
A gate resistor (RG) of 2–5 Ω is recommended between driver output and gate pin to dampen ringing caused by gate-drain capacitance (Crss = 240 pF) and PCB inductance. The device's intrinsic gate resistance is 0.6 Ω; omitting external RG risks overshoot exceeding ±20 V and oscillation above 100 MHz in high-speed switching.
DMT3003LFG-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerVDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 22A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 3.2mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 44 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2370 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.4W (Ta), 62W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- POWERDI3333-8
DMT3003LFG-7 FAQ
1.How can I place an order for DMT3003LFG-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMT3003LFG-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMT3003LFG-7 reliable?
The price and inventory of DMT3003LFG-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT3003LFG-7 is usually 5 days.
3.What payment methods are accepted for DMT3003LFG-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT3003LFG-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMT3003LFG-7?
DMT3003LFG-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMT3003LFG-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMT3003LFG-7?
For technical support, including DMT3003LFG-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT3003LFG-7 requirements.
6.How does Aetrix verify that DMT3003LFG-7 is sourced from the original manufacturer or authorized distributors?
All DMT3003LFG-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT3003LFG-7 meets industry standards.
7.What is the process for return or replacement of DMT3003LFG-7?
All DMT3003LFG-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMT3003LFG-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMT3003LFG-7 part is unused and in its original packaging.
Return procedure for DMT3003LFG-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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