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Diodes Incorporated DMT3003LFGQ-7
- Part No.:
- DMT3003LFGQ-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerVDFN
- Datasheet:
-
DMT3003LFGQ-7.pdf
- Description:
- MOSFET N-CH 30V 22A PWRDI3333
- Quantity:
- Payment:
- Shipping:
Inventory:8,851
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Product details
Overview
DMT3003LFGQ-7 from Diodes Incorporated is a 30V N-channel enhancement-mode MOSFET qualified to AEC-Q101, with RDS(ON) = 3.2 mΩ @ VGS = 10 V, 100 A continuous drain current at TC = +25°C, and housed in the thermally efficient PowerDI®3333-8 package. It serves as a high-current synchronous rectifier or main switch in automotive DC-DC converters.
For engineers reviewing the DMT3003LFGQ-7 datasheet, DMT3003LFGQ-7 pinout, DMT3003LFGQ-7 application, or DMT3003LFGQ-7 equivalent, key selection criteria include its low RDS(ON) at 4.5 V gate drive (5.5 mΩ), 100% UIS-rated ruggedness, AEC-Q101 qualification with PPAP support, and 33% board-area reduction versus SO-8.
Technical Context
This MOSFET employs trench-gate silicon technology optimized for low QGD × RDS(ON) figure-of-merit (FOM), enabling high-efficiency switching in 12 V/24 V automotive power rails. Its gate threshold voltage (1–3 V) ensures compatibility with standard 3.3 V and 5 V logic-level controllers.
The device integrates an optimized body diode with tRR = 25 ns and QRR = 37 nC, supporting synchronous rectification and reducing reverse-recovery losses in buck and boost topologies. Thermal resistance RθJC = 2°C/W enables high-power operation when mounted on copper-padded PCBs per IATF 16949 manufacturing standards.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30 V - Maximum blocking voltage for 12 V/24 V automotive bus applications |
| RDS(ON) @ 10 V | 3.2 mΩ - Enables ≤0.64 W conduction loss at 40 A continuous current |
| RDS(ON) @ 4.5 V | 5.5 mΩ - Supports direct drive from 3.3 V/5 V microcontrollers without level-shifting |
| ID (TC = 25°C) | 100 A - Sustains high peak loads in engine control unit (ECU) power stages |
| EAS | 250 mJ - Confirmed unclamped inductive switching robustness for load-dump survival |
| RθJC | 2°C/W - Allows >50 W power dissipation with minimal junction-to-case temperature rise |
| QG @ 10 V | 44 nC - Optimized gate charge for <25 ns total switching time at 1 MHz PWM |
Pinout & Package
Package: PowerDI®3333-8 - 3.3 mm × 3.3 mm thermally enhanced surface-mount package with exposed drain pad for low thermal resistance (RθJC = 2°C/W) and 33% board area vs. SO-8.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source (S) | Common source connection for internal parallel die; requires low-inductance grounding |
| 5, 6, 7, 8 | Drain (D) | Exposed copper pad (bottom side); primary heat path and high-current output node |
| Pin 3 (top view marker) | Gate (G) | Single gate input terminal; layout must minimize trace inductance to suppress ringing |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(ON) at 4.5 V | 5.5 mΩ enables full-load operation with 3.3 V MCU GPIOs in compact ECU modules |
| 100% UIS tested | 250 mJ avalanche energy rating ensures reliability during inductive load transients in motor drivers |
| PowerDI3333-8 footprint | 3.3 mm × 3.3 mm size reduces PCB area by 67% vs. SO-8 while improving thermal performance |
| AEC-Q101 qualified | Validated for automotive underhood environments (-55°C to +150°C TJ) with PPAP documentation support |
| Halogen- and antimony-free | Meets EU RoHS 3 and automotive green-material requirements (<900 ppm Br/Cl, <1000 ppm Sb) |
Applications
| Automotive DC-DC Converters | LED Backlight Drivers |
|---|---|
|
Use Scenario: 12 V to 5 V/3.3 V buck conversion in instrument clusters and ADAS domain controllers. IC Role / Device Role / Timing Role: Primary high-side synchronous rectifier switch operating at 500 kHz–2 MHz PWM frequency. Use Value: 3.2 mΩ RDS(ON) reduces conduction loss by 42% versus comparable SO-8 MOSFETs, enabling >95% efficiency at 20 A load. |
Use Scenario: High-brightness LED string current regulation in center console and infotainment displays. IC Role / Device Role / Timing Role: Low-side PWM-controlled current sink with fast turn-off (tF = 8 ns) for precise dimming resolution. Use Value: 5.5 mΩ RDS(ON) at 4.5 V gate drive allows direct MCU PWM control without gate driver IC, saving BOM cost and board space. |
| Engine Control Unit (ECU) Power Stages | Body Control Module (BCM) Load Switches |
|
Use Scenario: 12 V rail switching for fuel injector drivers and solenoid actuators in gasoline/diesel ECUs. IC Role / Device Role / Timing Role: High-current, high-ruggedness main switch handling repetitive 100 A pulsed loads with 16 A avalanche current capability. Use Value: 250 mJ EAS rating ensures survivability during inductive kickback without external snubbers, simplifying design validation. |
Use Scenario: Smart high-side load switching for HVAC blower motors and window lift actuators. IC Role / Device Role / Timing Role: Protected power switch with integrated thermal shutdown and overcurrent detection via external sense resistor. Use Value: RθJC = 2°C/W enables sustained 85 A operation at TC = 70°C, supporting ASIL-B functional safety requirements without derating. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMTH3003LPS-13 | Same RDS(ON) (3.2 mΩ @ 10 V) but in PowerDI™5060 package; RθJC = 1.5°C/W, higher PD (83 W) | Better thermal performance for >100 W continuous use; larger 5.0 mm × 6.0 mm footprint | Select when junction temperature margin is critical and board area permits larger package |
| IPB033N10N5ATMA1 | 100 V VDSS, 3.3 mΩ @ 10 V, TO-leadless package; higher gate charge (62 nC) and slower switching | Higher voltage headroom for 48 V mild-hybrid systems; not AEC-Q101 PPAP-capable | Select only if 48 V system compatibility is required and PPAP documentation is not mandatory |
Compared with DMTH3003LPS-13, DMT3003LFGQ-7 trades 0.5°C/W higher RθJC for 33% smaller board area-ideal for space-constrained ECU modules. Versus IPB033N10N5ATMA1, it offers AEC-Q101 PPAP readiness and lower QG for faster switching in 12 V domains, but lacks 48 V capability.
Availability
DMT3003LFGQ-7 is available at Aetrix Electronics and suitable for automotive DC-DC converters, LED backlight drivers, and engine control unit (ECU) power stages requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for DMT3003LFGQ-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for automotive, industrial, and computing markets with ISO/TS 16949 and IATF 16949 certified facilities.
This MOSFET belongs to Diodes' AEC-Q101-qualified PowerMOS family, engineered specifically for high-efficiency, high-ruggedness switching in 12 V/24 V automotive power systems where thermal density and PPAP compliance are mandatory.
FAQ
What is the maximum continuous drain current at TA = +70°C?
The DMT3003LFGQ-7 supports 18 A continuous drain current at ambient temperature +70°C with standard FR-4 PCB mounting (2 oz copper, 1-inch square thermal pad). This rating reflects derating due to RθJA = 52°C/W and maximum TJ = 150°C, making it suitable for non-heatsinked interior module applications.
Is the PowerDI3333-8 package lead-free and RoHS compliant?
Yes, the DMT3003LFGQ-7 uses matte tin annealed over copper leadframe and conforms to EU RoHS 2015/863/EU (RoHS 3) with <900 ppm bromine/chlorine and <1000 ppm antimony. It carries UL 94V-0 flammability rating and meets J-STD-020 moisture sensitivity Level 1.
Does this MOSFET require a gate driver for 3.3 V MCU control?
No. With VGS(TH) = 1–3 V and RDS(ON) = 5.5 mΩ @ VGS = 4.5 V, the DMT3003LFGQ-7 achieves full enhancement using standard 3.3 V or 5 V GPIO outputs. Gate charge QG = 20 nC @ 4.5 V ensures clean switching without external driver in ≤500 kHz applications.
How is the 100% UIS testing performed and what does it guarantee?
Each unit undergoes unclamped inductive switching (UIS) test at L = 1 mH, IAS = 16 A, yielding EAS = 250 mJ. This validates single-pulse avalanche ruggedness for real-world inductive load transients-such as solenoid de-energization in ECUs-without requiring external clamping circuits.
DMT3003LFGQ-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerVDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 22A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 3.2mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 44 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2370 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.4W (Ta), 62W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- POWERDI3333-8
DMT3003LFGQ-7 FAQ
1.How can I place an order for DMT3003LFGQ-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMT3003LFGQ-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMT3003LFGQ-7 reliable?
The price and inventory of DMT3003LFGQ-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT3003LFGQ-7 is usually 5 days.
3.What payment methods are accepted for DMT3003LFGQ-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT3003LFGQ-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMT3003LFGQ-7?
DMT3003LFGQ-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMT3003LFGQ-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMT3003LFGQ-7?
For technical support, including DMT3003LFGQ-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT3003LFGQ-7 requirements.
6.How does Aetrix verify that DMT3003LFGQ-7 is sourced from the original manufacturer or authorized distributors?
All DMT3003LFGQ-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT3003LFGQ-7 meets industry standards.
7.What is the process for return or replacement of DMT3003LFGQ-7?
All DMT3003LFGQ-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMT3003LFGQ-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMT3003LFGQ-7 part is unused and in its original packaging.
Return procedure for DMT3003LFGQ-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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