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Diodes Incorporated DMT3004LFG-13

Part No.:
DMT3004LFG-13
Manufacturer:
Diodes Incorporated
Category:
FETs, MOSFETs
Package:
8-PowerVDFN
Datasheet:
AetrixDMT3004LFG-13.pdf
Description:
MOSFET NCH 30V 10.4A POWERDI
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,771

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Product details

Overview

DMT3004LFG-13 from Diodes Incorporated is a 30V N-channel enhancement-mode MOSFET in PowerDI®3333-8 package, featuring 4.5mΩ RDS(ON) @ VGS = 10V, 25A continuous drain current at TC = +25°C, and 100% UIS-rated avalanche capability - deployed in high-density DC-DC converters and backlighting power stages.

For engineers reviewing the DMT3004LFG-13 datasheet, DMT3004LFG-13 pinout, DMT3004LFG-13 application, or DMT3004LFG-13 equivalent, key selection criteria include low RDS(ON) at 4.5V gate drive, thermal resistance (RθJC = 3°C/W), small-footprint thermally enhanced packaging, and body diode recovery performance (tRR = 25ns, QRR = 37nC).

Technical Context

This MOSFET employs trench-gate silicon technology optimized for low conduction loss and fast switching in synchronous buck topologies. Its RDS(ON) remains stable across -55°C to +150°C junction temperature, with gate threshold voltage (VGS(TH) = 1–3V) enabling robust 4.5V logic-level drive compatibility.

The device integrates an intrinsic body diode with 3A continuous forward current rating and controlled reverse recovery (QRR = 37nC), supporting high-frequency operation up to 1MHz while maintaining low EMI in compact power modules.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS 30V - Supports 24V input rail systems with margin against transients.
RDS(ON) max 4.5mΩ @ VGS = 10V - Enables <1W conduction loss at 20A in high-current POL converters.
ID continuous 25A @ TC = +25°C - Package-limited rating requiring heatsinking or PCB copper area for sustained load.
Qg 44nC @ VGS = 10V - Determines gate driver strength requirement for <20ns turn-on delay in 500kHz+ designs.
tRR / QRR 25ns / 37nC - Minimizes shoot-through risk and switching loss during dead-time in synchronous rectification.
RθJC 3°C/W - Enables direct thermal path to heatsink or copper plane, critical for >10W dissipation in space-constrained layouts.
EAS 110mJ - Confirmed avalanche energy rating supports robustness against inductive switching faults without derating.

Pinout & Package

Package: PowerDI®3333-8 - Thermally enhanced 3.3mm × 3.3mm surface-mount package with exposed drain pad for low RθJC; UL 94V-0 molded green compound; moisture sensitivity level 1.

Pin/Terminal Circuit Role Design Meaning
1, 2, 3, 4 Source Four parallel source terminals reduce bond-wire inductance and improve current sharing in high-di/dt applications.
5, 6, 7, 8 Drain Exposed drain pad (pins 5–8) serves as primary thermal and electrical connection to PCB ground plane.
Gate (Pin 1 marked by SG3 code) Control input Single gate terminal with 0.6Ω gate resistance - limits dV/dt-induced false turn-on and simplifies gate driver layout.

Key Features

Feature Design Value
Low RDS(ON) at 4.5V 7.0mΩ - Enables efficient operation directly from 5V microcontroller GPIOs without level-shifting.
Thermal footprint efficiency 33% board area vs SO-8 - Allows higher power density in portable and LED driver PCBs.
UIS-rated avalanche capability 27A IAS, 110mJ EAS - Eliminates need for external clamping in inductive load switching.
Green construction Halogen- and antimony-free, RoHS 3 compliant - Meets IPC-1752A material declaration requirements.
Body diode performance VSD = 0.7V @ IS = 1A - Reduces reverse conduction loss in synchronous rectifier mode.

Applications

LED Backlight Driver Point-of-Load Converter

Use Scenario: High-efficiency boost converter driving 12–24 white LEDs in automotive instrument clusters.

IC Role / Device Role / Timing Role: Synchronous rectifier switch operating at 300–500kHz with 4.5V gate drive from PWM controller.

Use Value: 4.5mΩ RDS(ON) reduces conduction loss by 42% versus comparable SO-8 MOSFETs, enabling 94% system efficiency at 2A output.

Use Scenario: 12V-to-1.2V/20A step-down regulator for FPGA core supply in industrial edge compute modules.

IC Role / Device Role / Timing Role: High-side power switch in multiphase buck stage, thermally coupled to 2oz copper thermal pad.

Use Value: 3°C/W RθJC allows 42W power dissipation at TC = 100°C, eliminating need for external heatsink in 25mm² footprint.

USB-C PD Power Path Motor Drive Half-Bridge

Use Scenario: Input protection and OR-ing switch in 20V/5A USB-C PD sink design with reverse-voltage blocking.

IC Role / Device Role / Timing Role: Low-side switch controlling power path between adapter and battery charging IC.

Use Value: 100% UIS rating ensures survival during hot-plug transient events up to 30V/10A surge without failure.

Use Scenario: Low-side switch in 24V brushed DC motor H-bridge for HVAC damper actuation.

IC Role / Device Role / Timing Role: PWM-controlled power switch operating at 20kHz with bidirectional body diode conduction during decay.

Use Value: 25ns tRR and 37nC QRR limit switching loss to <0.5W per transition, reducing thermal stress in sealed enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
DMT3004LK3-13 Same die, but PowerDI™5060-8 package (5.0×6.0mm); RθJA = 40°C/W vs 60°C/W for DMT3004LFG-13. Higher thermal mass suits lower-frequency (<200kHz), higher-current (>30A) applications where board space permits. Select when PCB layout allows larger footprint and thermal management prioritizes steady-state over transient response.
DMN3040LFG-7 Same PowerDI3333-8 package, but 30V/4.0mΩ @ 10V; Qg = 48nC (vs 44nC); no UIS rating specified. Lacks avalanche qualification - requires external clamping in inductive switching; better for pure DC-DC use. Choose only in non-inductive, tightly regulated environments where avalanche robustness is not required.

Compared with DMT3004LK3-13 and DMN3040LFG-7, DMT3004LFG-13 uniquely balances ultra-low RDS(ON), industry-leading thermal resistance in minimal footprint, and fully rated avalanche capability - making it optimal for space-constrained, high-reliability DC-DC and backlighting designs.

Availability

DMT3004LFG-13 is available at Aetrix Electronics and suitable for LED backlight drivers, point-of-load converters, and USB-C PD power path management requiring stable component supply, long-term lifecycle support, and traceable green sourcing.

Supply support for DMT3004LFG-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in China, Taiwan, and the U.S.

This MOSFET belongs to Diodes' PowerDI® trench-MOSFET product line, engineered specifically for high-efficiency, high-density power conversion in consumer, computing, and industrial applications where thermal and footprint constraints dominate.

FAQ

What is the maximum safe operating junction temperature for DMT3004LFG-13?

The absolute maximum junction temperature is +150°C, and the device is characterized for RDS(ON) stability across -55°C to +150°C. Thermal design must ensure TJ stays below this limit under worst-case ambient and power dissipation conditions, using the provided RθJC = 3°C/W and RθJA = 60°C/W values with appropriate PCB copper area.

Can DMT3004LFG-13 be driven directly by a 3.3V microcontroller GPIO?

No - its gate threshold voltage range is 1–3V, but full enhancement requires ≥4.5V for guaranteed 7.0mΩ RDS(ON). At 3.3V, RDS(ON) rises significantly (≥12mΩ), increasing conduction loss. A dedicated gate driver or level shifter is required for reliable 3.3V control.

Is the PowerDI3333-8 package compatible with standard SO-8 reflow profiles?

Yes - the PowerDI3333-8 uses matte tin annealed terminals and complies with J-STD-020 moisture sensitivity level 1, allowing standard lead-free reflow profiles (peak 260°C). Its smaller size requires adjusted stencil aperture and placement accuracy, but no special thermal profile is needed beyond IPC/JEDEC Class 3 guidelines.

Does DMT3004LFG-13 support paralleling for higher current handling?

Yes - its positive temperature coefficient of RDS(ON) enables stable current sharing when paralleled. Layout must ensure matched gate drive paths and symmetrical source/drain routing; thermal coupling via shared copper area further improves balance. Derating by 15% per additional device is recommended for reliability.

DMT3004LFG-13 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
8-PowerVDFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
10.4A (Ta), 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
4.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
44 nC @ 10 V
Vgs (Max):
+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds:
2370 pF @ 15 V
FET Feature:
-
Power Dissipation (Max):
2.1W (Ta), 42W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
POWERDI3333-8

DMT3004LFG-13 FAQ

1.How can I place an order for DMT3004LFG-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMT3004LFG-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMT3004LFG-13 reliable?

The price and inventory of DMT3004LFG-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT3004LFG-13 is usually 5 days.

3.What payment methods are accepted for DMT3004LFG-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT3004LFG-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMT3004LFG-13?

DMT3004LFG-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMT3004LFG-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMT3004LFG-13?

For technical support, including DMT3004LFG-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT3004LFG-13 requirements.

6.How does Aetrix verify that DMT3004LFG-13 is sourced from the original manufacturer or authorized distributors?

All DMT3004LFG-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT3004LFG-13 meets industry standards.

7.What is the process for return or replacement of DMT3004LFG-13?

All DMT3004LFG-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMT3004LFG-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMT3004LFG-13 part is unused and in its original packaging.

Return procedure for DMT3004LFG-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMT3004LFG-13 Tags

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