Diodes Incorporated DMT3004LFG-7

Overview

DMT3004LFG-7 from Diodes Incorporated is a 30V N-channel enhancement-mode MOSFET in PowerDI^®3333-8 package, rated for 25A continuous drain current at T_C = +25°C, with R_DS(ON) of 4.5 mΩ @ V_GS = 10V and 7.0 mΩ @ V_GS = 4.5V. It delivers low conduction loss and high switching efficiency for synchronous rectification in DC-DC converters.

For engineers reviewing the DMT3004LFG-7 datasheet, DMT3004LFG-7 pinout, DMT3004LFG-7 application, or DMT3004LFG-7 equivalent, key selection criteria include its 3.5 mΩ typical R_DS(ON), 100% UIS-rated avalanche capability, 42 W power dissipation at T_C = +25°C, and thermally optimized PowerDI3333-8 footprint occupying only 33% board area vs. SO-8.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve ultra-low R_DS(ON) while maintaining fast switching performance, evidenced by Q_gd × R_DS(ON) FoM of ~1.07 nC·Ω (Q_gd = 8 nC, R_DS(ON) = 136 mΩ at V_GS = 4.5V). Its gate threshold voltage (1–3 V) supports 3.3 V and 5 V logic-level drive.

The device integrates a robust body diode with t_RR = 25 ns and Q_RR = 37 nC under IF = 15 A, di/dt = 500 A/μs, enabling efficient reverse recovery in buck and synchronous boost topologies. Thermal resistance R_θJC = 3 °C/W confirms direct heat transfer via exposed drain pad.

Key Specifications

Pinout & Package

Package: PowerDI^®3333-8 - Thermally enhanced 8-pin surface-mount package with exposed drain pad for low R_θJC; dimensions 3.30 mm × 3.30 mm × 0.80 mm; RoHS-compliant matte tin finish over copper leadframe.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with DMT3004LK3-7 and SiR872DP-T1-GE3, DMT3004LFG-7 uniquely balances ultra-low R_DS(ON), minimal board area, and proven 100% UIS ruggedness-making it optimal for space-constrained, high-reliability DC-DC and motor drive designs where thermal path optimization is critical.

Availability

DMT3004LFG-7 is available at Aetrix Electronics and suitable for DC-DC converters, LED backlight drivers, and USB-C power delivery systems requiring stable component supply, long-term lifecycle assurance, and consistent parametric performance across production lots.

Supply support for DMT3004LFG-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

DMT3004LFG-7 belongs to Diodes' PowerMOS™ portfolio, engineered specifically for high-efficiency, high-density power conversion in consumer, computing, and industrial applications where low R_DS(ON) and thermal performance are decisive.

FAQ

What is the maximum allowable gate-source voltage for DMT3004LFG-7?

The absolute maximum V_GS is +20 V and –16 V, per the datasheet's "Maximum Ratings" table. Exceeding +20 V risks permanent gate oxide damage, while –16 V is the limit for reverse bias. For reliable operation, gate drive should be clamped between 0 V and 12 V, with transient spikes limited by external Zener protection.

Can DMT3004LFG-7 be used in parallel configurations?

Yes-its positive temperature coefficient of R_DS(ON) (see Figure 6) ensures inherent current sharing. However, layout symmetry is critical: matched gate trace lengths, Kelvin source connections, and shared thermal mass across all paralleled devices are required to avoid imbalance exceeding ±15% at full load.

Does DMT3004LFG-7 require a gate resistor for stability?

A gate resistor (typically 2–10 Ω) is recommended to dampen ringing caused by L_g–C_iss resonance, especially at switching frequencies >500 kHz. The device's R_g = 0.6 Ω (typical) is insufficient alone; external resistance controls dV/dt and prevents false turn-on due to Miller coupling in high-di/dt environments.

Is the PowerDI3333-8 package compatible with standard reflow profiles?

Yes-the PowerDI3333-8 meets IPC/JEDEC J-STD-020 moisture sensitivity level 1 and is qualified for standard lead-free reflow (peak 260°C, 20–40 sec above 217°C). The exposed drain pad requires solder paste coverage ≥80% and stencil aperture matching the 2.27 mm × 2.27 mm thermal pad per the recommended pad layout.