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Diodes Incorporated DMT3004LPS-13
- Part No.:
- DMT3004LPS-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerTDFN
- Datasheet:
-
DMT3004LPS-13.pdf
- Description:
- MOSFET N-CH 30V 21A PWRDI5060
- Quantity:
- Payment:
- Shipping:
Inventory:2,500
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Product details
Overview
DMT3004LPS-13 from Diodes Incorporated is a 30V N-channel enhancement-mode MOSFET in PowerDI5060-8 package, optimized for high-current DC-DC converters with RDS(ON) = 3.8 mΩ @ VGS = 10 V, ID = 140 A at TC = +25°C, and 100% unclamped inductive switching rating. It serves as a primary synchronous rectifier or high-side switch in server VRMs and telecom power modules.
For engineers reviewing the DMT3004LPS-13 datasheet, DMT3004LPS-13 pinout, DMT3004LPS-13 application, or DMT3004LPS-13 equivalent, key selection criteria include low Qgd × RDS(ON) figure-of-merit (17.5 nC·mΩ), thermally efficient thermal resistance RθJC = 1.1°C/W, body diode recovery charge QRR = 37 nC, and JEDEC-qualified reliability for industrial power systems.
Technical Context
This MOSFET employs trench-gate silicon technology to achieve ultra-low on-resistance while maintaining fast switching transitions: tD(ON) = 6.2 ns, tF = 8 ns, and Ciss = 2370 pF at VDS = 15 V. Its gate threshold voltage VGS(TH) = 1–3 V enables robust drive compatibility with 3.3 V and 5 V controllers.
The device integrates a co-packaged body diode with tRR = 25 ns and VSD = 0.70 V @ IS = 1 A, supporting synchronous rectification without external Schottky diodes. Thermal design is enabled by direct die-to-case conduction via copper leadframe and 1.1°C/W junction-to-case resistance.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30 V - Maximum blocking voltage for 12 V and 24 V input bus applications |
| RDS(ON) | 3.8 mΩ @ VGS = 10 V - Enables <1.5 W conduction loss at 60 A continuous current |
| ID (TC = 25°C) | 140 A - Supports high-density power stages without forced air cooling |
| Qg | 43.7 nC - Total gate charge enabling efficient drive with standard 1-A gate drivers |
| EAS | 110 mJ - Avalanche energy rating ensures robustness against inductive load transients |
| RθJC | 1.1°C/W - Enables direct heatsink mounting for thermal management in compact layouts |
| tRR | 25 ns - Fast body diode recovery minimizes cross-conduction losses in synchronous buck topologies |
Pinout & Package
Package: PowerDI5060-8 - Thermally enhanced surface-mount package with exposed drain paddle for low-inductance, high-current routing and direct thermal path to PCB copper.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Top View) | Source | Primary current return path; tied to power ground plane with multiple vias for low impedance |
| Pins 2–4, 6–8 (Top View) | Drain | Parallel-connected drain terminals forming low-inductance high-current output node |
| Pin 5 (Top View) | Gate | Control input requiring <44 nC total charge; routed away from power loops to minimize noise coupling |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(ON) × Qgd FOM | 17.5 nC·mΩ - Reduces switching losses in high-frequency (>500 kHz) DC-DC converters |
| 100% UIS-rated | 27 A avalanche current / 110 mJ energy - Eliminates need for external snubbers in hard-switched topologies |
| Thermally optimized leadframe | RθJC = 1.1°C/W - Allows >90 W power dissipation with 80°C case temperature rise |
| Green, RoHS-compliant construction | Halogen-free, antimony-free, matte tin finish - Meets IPC-J-STD-020 Level 1 moisture sensitivity and automotive PPAP requirements |
| Body diode QRR | 37 nC - Enables zero-voltage switching (ZVS) in LLC resonant converters when used as synchronous rectifier |
Applications
| Server VRM | Telecom PSU |
|---|---|
|
Use Scenario: Primary high-side switch in 48 V to 12 V intermediate bus converter for AI accelerator cards. IC Role / Device Role / Timing Role: High-current synchronous rectifier operating at 600 kHz with 140 A peak load current. Use Value: 3.8 mΩ RDS(ON) reduces conduction loss by 32% versus comparable 5 mΩ MOSFETs, improving full-load efficiency to >95.2%. |
Use Scenario: Output synchronous rectifier in 48 V to 54 V boost converter for distributed power architecture. IC Role / Device Role / Timing Role: Low-QRR body diode enables ZVS turn-on during light-load burst mode operation. Use Value: 37 nC QRR cuts reverse recovery loss by 41% vs. legacy 62 nC devices, extending light-load efficiency above 94%. |
| Industrial Motor Drive | EV Onboard Charger |
|
Use Scenario: Half-bridge high-side switch in 24 V BLDC gate driver stage for HVAC blowers. IC Role / Device Role / Timing Role: Fast-switching N-channel MOSFET with 6.2 ns turn-on delay for precise PWM timing control. Use Value: 2370 pF Ciss and 0.7 Ω Rg enable clean 20 ns rise time with minimal gate drive power (<150 mW). |
Use Scenario: Secondary-side synchronous rectifier in 3.3 kW AC/DC stage of bidirectional OBC. IC Role / Device Role / Timing Role: High-reliability power switch rated for 150°C junction temperature and 100% UIS stress. Use Value: 110 mJ EAS withstands worst-case fault conditions without derating, reducing system-level overvoltage protection complexity. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-current N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMT3004LPSQ-13 | Automotive-grade AEC-Q101 qualified; identical RDS(ON), Qg, and package | Required for automotive OBC, traction inverter auxiliary supplies, and ADAS power rails | Select when IATF 16949 manufacturing, PPAP documentation, or extended temperature validation (-40°C to +150°C) is mandated |
| DMTH3004LPS-13 | Same die in PowerDI3333 package; RDS(ON) = 4.2 mΩ, RθJC = 1.4°C/W, lower ID = 100 A | Suitable for space-constrained 50 W–100 W DC-DC modules where thermal margin allows higher RDS(ON) | Choose when board area is critical and 0.4 mΩ RDS(ON) penalty is acceptable for 30% smaller footprint |
Compared with DMT3004LPS-13, the Q-suffix variant adds automotive qualification overhead but delivers identical electrical performance, while the DMTH3004LPS-13 trades 11% higher conduction loss and 27% higher thermal resistance for 44% smaller PCB area-making it optimal for cost-sensitive, medium-power designs where thermal headroom exists.
Availability
DMT3004LPS-13 is available at Aetrix Electronics and suitable for server VRMs, telecom PSUs, industrial motor drives, and EV onboard chargers requiring stable component supply across multi-year production cycles.
Supply support for DMT3004LPS-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in IATF 16949-certified facilities.
This MOSFET belongs to Diodes' PowerDI® high-current logic-level portfolio, engineered specifically for high-efficiency, high-density power conversion in datacenter, telecom, and industrial infrastructure.
FAQ
What is the maximum continuous drain current at TC = +70°C?
The DMT3004LPS-13 supports 110 A continuous drain current when case temperature is maintained at +70°C, per the Absolute Maximum Ratings table. This derating reflects thermal limits of the PowerDI5060-8 package and must be validated using measured PCB copper area and airflow conditions.
Does this MOSFET require a gate resistor for stability?
A gate resistor of 3 Ω is specified in the dynamic characteristics test condition (tD(ON), tR) and is recommended for EMI control and ringing suppression. Lower values (≤1 Ω) may cause overshoot; higher values (>10 Ω) increase switching losses disproportionately due to its 43.7 nC Qg.
Can DMT3004LPS-13 be used in parallel configurations?
Yes-the device exhibits positive temperature coefficient for RDS(ON) (normalized resistance increases with junction temperature), enabling stable current sharing. Parallel operation requires matched layout symmetry, identical gate drive paths, and thermal coupling between devices to ensure <5°C inter-device ΔT.
Is the body diode suitable for reverse recovery in hard-switched topologies?
The body diode has tRR = 25 ns and QRR = 37 nC at IF = 15 A, making it suitable for hard-switched synchronous rectification up to 300 kHz. For >500 kHz operation, ZVS-assisted topologies are recommended to avoid reverse recovery loss spikes.
DMT3004LPS-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerTDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 21A (Ta), 140A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 3.8mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 43.7 nC @ 10 V
- Vgs (Max):
- +20V, -16V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2370 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.7W (Ta), 113W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerDI5060-8
DMT3004LPS-13 FAQ
1.How can I place an order for DMT3004LPS-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMT3004LPS-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMT3004LPS-13 reliable?
The price and inventory of DMT3004LPS-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT3004LPS-13 is usually 5 days.
3.What payment methods are accepted for DMT3004LPS-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT3004LPS-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMT3004LPS-13?
DMT3004LPS-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMT3004LPS-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMT3004LPS-13?
For technical support, including DMT3004LPS-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT3004LPS-13 requirements.
6.How does Aetrix verify that DMT3004LPS-13 is sourced from the original manufacturer or authorized distributors?
All DMT3004LPS-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT3004LPS-13 meets industry standards.
7.What is the process for return or replacement of DMT3004LPS-13?
All DMT3004LPS-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMT3004LPS-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMT3004LPS-13 part is unused and in its original packaging.
Return procedure for DMT3004LPS-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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