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Diodes Incorporated DMT3006LDV-13
- Part No.:
- DMT3006LDV-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 8-PowerVDFN
- Datasheet:
-
DMT3006LDV-13.pdf
- Description:
- MOSFET 2N-CH 30V 25A PWRDI3333
- Quantity:
- Payment:
- Shipping:
Inventory:5,161
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Product details
Overview
DMT3006LDV-13 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in PowerDI3333-8 (Type UXC) package, rated for 30V VDSS, 10mΩ RDS(ON) @ 10VGS, and 25A continuous drain current at TC = +25°C. It serves as a high-efficiency synchronous rectifier or load switch in DC-DC converters and battery protection circuits.
For engineers reviewing the DMT3006LDV-13 datasheet, DMT3006LDV-13 pinout, DMT3006LDV-13 application, or DMT3006LDV-13 equivalent, key selection criteria include dual-channel RDS(ON) matching, low gate charge (QG = 16.7nC @ 10V), fast switching (tF = 4.6ns), thermal resistance (RθJC = 14°C/W), and RoHS-compliant matte tin terminations.
Technical Context
This dual MOSFET integrates two matched N-channel silicon die in a thermally enhanced PowerDI3333-8 package with exposed drain pads for low RθJC. Its gate threshold voltage (VGS(TH) = 1.0–3.0V) enables 4.5V logic-level drive compatibility while maintaining tight RDS(ON) tolerance across temperature (±15% from –55°C to +150°C).
The device features low input capacitance (Ciss = 1155pF) and reverse transfer capacitance (Crss = 72pF) to minimize Miller effect during high-frequency switching. Body diode recovery (tRR = 19.3ns, QRR = 8.6nC) supports efficient synchronous rectification in buck converters operating up to 1MHz.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30V - Maximum blocking voltage before avalanche conduction; suitable for 24V bus systems with margin. |
| RDS(ON) @ 10VGS | 7.6–10mΩ - Low conduction loss enabling <1.5W dissipation at 20A, critical for high-current power stages. |
| QG @ 10V | 16.7nC - Gate drive energy requirement determines driver sizing and switching loss in PWM applications. |
| tF | 4.6ns - Fast fall time reduces transition losses and EMI generation in high-frequency SMPS designs. |
| RθJC | 14°C/W - Junction-to-case thermal resistance enables direct heatsinking via PCB copper pour or metal-core substrate. |
| ID (TC = 25°C) | 25A - Continuous current rating under ideal case cooling; derates to 20A at TC = 70°C. |
| Crss | 72pF - Low reverse transfer capacitance minimizes gate-drain coupling and improves noise immunity. |
Pinout & Package
Package: PowerDI3333-8 (Type UXC), surface-mount, thermally enhanced with dual exposed drain pads (D1/D2) on bottom side. Molded plastic case meets UL 94V-0; moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| PIN1 (D1) | Drain 1 | High-side or low-side power path terminal; electrically connected to exposed pad 1 for thermal and electrical conduction. |
| PIN2 (S1) | Source 1 | Return path for Channel 1; referenced to gate drive ground in half-bridge configurations. |
| PIN3 (G1) | Gate 1 | Control input for Channel 1; requires <3.0V threshold for turn-on, compatible with 3.3V/5V logic. |
| PIN4 (D2) | Drain 2 | Independent power path terminal; isolated from D1 but shares common thermal pad footprint. |
| PIN5 (S2) | Source 2 | Return path for Channel 2; may be tied to S1 for paralleled operation or kept separate for dual independent switches. |
| PIN6 (G2) | Gate 2 | Independent control input for Channel 2; matched VGS(TH) and RDS(ON) ensure balanced channel performance. |
| PIN7 (S1) | Source 1 (redundant) | Second connection to Source 1 for lower inductance routing and improved current sharing in high-di/dt applications. |
| PIN8 (S2) | Source 2 (redundant) | Second connection to Source 2; enables Kelvin sensing or separate gate loop routing to reduce shoot-through risk. |
Key Features
| Feature | Design Value |
|---|---|
| Dual matched N-channel MOSFETs | Guaranteed RDS(ON) tracking ≤10% between channels ensures balanced current sharing in parallel or complementary topologies. |
| Low QG/QGD ratio | QGD/QG = 3.5/16.7 ≈ 21% - Reduces Miller plateau duration and improves controllability during hard switching. |
| Enhanced thermal performance | RθJC = 14°C/W - Enables >1.8W steady-state power dissipation with minimal junction temperature rise when mounted on 2oz copper. |
| Green, lead-free construction | Halogen- and antimony-free molding compound (<900ppm Br+Cl, <1000ppm Sb); compliant with RoHS 3 and JEDEC J-STD-020 Level 1. |
| Fast body diode recovery | tRR = 19.3ns, QRR = 8.6nC - Minimizes reverse recovery loss and voltage overshoot in synchronous rectifier mode. |
Applications
| Battery Protection Circuit | DC-DC Synchronous Rectifier |
|---|---|
|
Use Scenario: Dual-MOSFET configuration in lithium-ion battery packs to block reverse current and enable charge/discharge path control. IC Role / Device Role / Timing Role: Dual N-channel back-to-back switch providing overcurrent and short-circuit protection with bidirectional blocking capability. Use Value: 10mΩ RDS(ON) limits voltage drop to <250mV at 25A, preserving battery runtime and reducing thermal stress on protection ICs. |
Use Scenario: Secondary-side switch in 12V-to-5V buck converter for industrial IoT edge nodes requiring >95% efficiency at 10A load. IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode to eliminate forward voltage loss and recover energy during dead-time. Use Value: 4.6ns tF and 19.3ns tRR allow clean zero-voltage switching at 500kHz, cutting conduction loss by 65% vs. discrete diode solution. |
| Load Switch for USB PD Power Path | Motor Driver Half-Bridge Stage |
|
Use Scenario: In-line power switch for USB Power Delivery (PD) 3.0 compliant ports delivering up to 20V/5A to peripherals. IC Role / Device Role / Timing Role: Single-channel N-MOSFET used as hot-swap controller with controlled slew rate and inrush limiting. Use Value: 14mΩ RDS(ON) @ 4.5VGS ensures <70mV dropout at 5A, meeting USB PD voltage regulation spec without active compensation. |
Use Scenario: High-side/low-side pair in H-bridge for 24V brushed DC motor control in factory automation actuators. IC Role / Device Role / Timing Role: Dual-channel switch implementing PWM-driven direction and speed control with shoot-through prevention. Use Value: Matched VGS(TH) (1.0–3.0V) and RDS(ON) enable precise duty-cycle symmetry, reducing torque ripple below 2% at 10kHz PWM. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMT3006LSDV-13 | Same die, identical RDS(ON) and QG, but uses PowerDI3333-8 (Type UXD) package with different pinout (G1/S1/D1/G2/S2/D2 order) and slightly higher RθJA (70°C/W vs. 70°C/W per note 6). | Requires PCB layout revision due to swapped pin assignments; not drop-in compatible despite identical electrical specs. | Select only when redesigning board layout to leverage UXD's alternate thermal pad geometry. |
| SIZ250DT-T1-GE3 | 30V dual N-MOSFET in PowerPAIR 3.3×3.3 package; RDS(ON) = 8.2mΩ @ 10V but QG = 22.5nC - 35% higher gate charge increases driver loss. | Higher Ciss (1350pF) and slower tF (6.5ns) limit usable frequency to ≤300kHz in high-efficiency SMPS. | Prefer for cost-sensitive applications where 5% efficiency penalty and 200kHz max switching are acceptable. |
Compared with DMT3006LDV-13, DMT3006LSDV-13 demands layout changes but delivers identical performance, whereas SIZ250DT-T1-GE3 trades higher gate charge and slower switching for broader distributor availability-making it viable only where thermal headroom and frequency requirements are relaxed.
Availability
DMT3006LDV-13 is available at Aetrix Electronics and suitable for battery management systems, USB PD power delivery modules, industrial DC-DC converters, and motor control H-bridges requiring stable component supply and guaranteed long-term sourcing.
Supply support for DMT3006LDV-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in China, Taiwan, and the US.
The DMT3006LDV belongs to Diodes' Power MOSFET product line, engineered specifically for high-current, high-efficiency power conversion in space-constrained industrial and computing applications.
FAQ
What is the maximum safe operating temperature for DMT3006LDV-13?
The device supports junction temperatures from –55°C to +150°C. For reliable long-term operation, keep TJ ≤125°C under continuous load. Derating curves in Figure 5 show RDS(ON) increases ~1.8× from 25°C to 125°C, so thermal design must ensure RθJA ≤41°C/W (per Note 6) to sustain 20A at ambient 70°C.
Can DMT3006LDV-13 be used in linear regulator applications?
No-it is optimized for switching operation, not linear mode. Its Safe Operating Area (SOA) curve (Figure 12) shows limited DC capability: at VDS = 10V, max ID is ~2.5A for steady-state use. Linear operation risks thermal runaway due to positive temperature coefficient of RDS(ON) and insufficient SOA margin above 100ms pulses.
How does the PowerDI3333-8 (UXC) package improve thermal performance over standard SO-8?
The UXC variant uses dual exposed drain pads (D1/D2) soldered directly to large PCB copper areas, achieving RθJC = 14°C/W-40% lower than typical SO-8 MOSFETs (~23°C/W). This allows 1.8W power dissipation with only 25°C rise above case temperature, versus ~1.1W for SO-8 under identical conditions.
Is DMT3006LDV-13 suitable for automotive applications?
It is not AEC-Q101 qualified. While its –55°C to +150°C rating meets automotive ambient ranges, Diodes Incorporated does not certify this part for automotive use. For automotive-grade equivalents, consider the DMT3006LSDV-A (AEC-Q101 qualified) or AP30H10GHM (30V dual N-ch, AEC-Q101, 7.5mΩ).
DMT3006LDV-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerVDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 30V
- Current - Continuous Drain (Id) @ 25°C:
- 25A (Tc)
- Rds On (Max) @ Id, Vgs:
- 10mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 16.7nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1155pF @ 15V
- Power - Max:
- 900mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerDI3333-8 (Type UXC)
DMT3006LDV-13 FAQ
1.How can I place an order for DMT3006LDV-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMT3006LDV-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMT3006LDV-13 reliable?
The price and inventory of DMT3006LDV-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT3006LDV-13 is usually 5 days.
3.What payment methods are accepted for DMT3006LDV-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT3006LDV-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMT3006LDV-13?
DMT3006LDV-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMT3006LDV-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMT3006LDV-13?
For technical support, including DMT3006LDV-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT3006LDV-13 requirements.
6.How does Aetrix verify that DMT3006LDV-13 is sourced from the original manufacturer or authorized distributors?
All DMT3006LDV-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT3006LDV-13 meets industry standards.
7.What is the process for return or replacement of DMT3006LDV-13?
All DMT3006LDV-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMT3006LDV-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMT3006LDV-13 part is unused and in its original packaging.
Return procedure for DMT3006LDV-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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