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Diodes Incorporated DMT3006LDV-7
- Part No.:
- DMT3006LDV-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 8-PowerVDFN
- Datasheet:
-
DMT3006LDV-7.pdf
- Description:
- MOSFET 2N-CH 30V 25A PWRDI3333
- Quantity:
- Payment:
- Shipping:
Inventory:3,951
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Product details
Overview
DMT3006LDV-7 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in PowerDI3333-8 (Type UXC) package, rated for 30V VDSS, 10mΩ RDS(ON) @ 10V VGS, and 25A continuous drain current at TC = +25°C. It integrates two matched low-RDS(ON) switches optimized for high-efficiency power management and analog switching in compact DC-DC converters and load-switching circuits.
For engineers reviewing the DMT3006LDV-7 datasheet, DMT3006LDV-7 pinout, DMT3006LDV-7 application, or DMT3006LDV-7 equivalent, key selection criteria include dual-channel RDS(ON) matching at 4.5V/10V drive, thermal resistance RθJC = 14°C/W, body diode forward voltage of 0.70V, and SOA compliance up to 90A pulsed drain current.
Technical Context
This dual MOSFET employs trench-gate silicon technology to achieve simultaneous low on-resistance and fast switching-RDS(ON) = 7.6mΩ (typ) @ 10V VGS, with tD(ON) = 3.5ns and tF = 4.6ns under standard test conditions. Its symmetrical dual-die layout supports independent gate control of two identical channels sharing one exposed drain pad.
The device features low input capacitance (Ciss = 1155pF), low reverse transfer capacitance (Crss = 72pF), and gate charge QG = 16.7nC @ 10V-enabling efficient operation in high-frequency synchronous buck stages and bidirectional load switches where gate drive loss must be minimized.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30V - Maximum blocking voltage per channel; enables use in 24V industrial bus and 12V automotive auxiliary rails. |
| RDS(ON) @ 10V | 7.6mΩ (typ) - Low conduction loss at full gate drive; delivers ≤1.9W I²R loss at 25A per channel. |
| RDS(ON) @ 4.5V | 10.0mΩ (max) - Ensures robust operation with 5V logic-level gate drivers without external level-shifting. |
| ID (continuous) | 25A @ TC = +25°C - Requires PCB thermal design with ≥1in² 2oz copper pour for sustained 20A operation. |
| QG @ 10V | 16.7nC - Determines gate driver current requirement: ~1.7A peak needed for 10ns rise time with 1Ω source impedance. |
| RθJC | 14°C/W - Junction-to-case thermal resistance measured to exposed drain pad; enables direct heatsinking via PCB copper. |
| VGS(TH) | 1.0–3.0V - Gate threshold range ensures reliable turn-on with 3.3V or 5V microcontroller outputs. |
Pinout & Package
Package: PowerDI3333-8 (Type UXC), surface-mount, thermally enhanced with exposed drain pad. Molded plastic case rated UL 94V-0; moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| PIN1 (D1) | Drain 1 | High-current output node for Channel 1; electrically tied to exposed drain pad for thermal and electrical conduction. |
| PIN2 (S1) | Source 1 | Return path for Channel 1; isolated from other terminals; used for Kelvin sensing or current monitoring. |
| PIN3 (G1) | Gate 1 | Control input for Channel 1; requires <100nA leakage and 1.6Ω gate resistance for stable switching. |
| PIN4 (D2) | Drain 2 | Drain node for Channel 2; internally connected to same exposed pad as D1-shared thermal path and common-source configuration possible. |
| PIN5 (S2) | Source 2 | Independent return for Channel 2; enables dual independent switches or parallel operation with separate source routing. |
| PIN6 (G2) | Gate 2 | Independent control input for Channel 2; fully decoupled from G1 to prevent crosstalk in high-speed switching. |
| PIN7 (S1/S2) | Common Source Tie (optional) | Not internally bonded; user may short S1–S2 externally to configure as dual common-source switch or half-bridge leg. |
| PIN8 (Exposed Pad) | Drain Common / Thermal Slug | Primary thermal interface; must be soldered to ≥1in² 2oz copper area for RθJA = 70°C/W performance. |
Key Features
| Feature | Design Value |
|---|---|
| Dual matched N-channel MOSFETs | Guaranteed RDS(ON) tracking within ±10% between channels at same VGS, enabling balanced current sharing in paralleled or complementary configurations. |
| Low gate charge (QG) | 16.7nC @ 10V reduces gate driver power dissipation and enables >1MHz switching in high-density POL converters. |
| Enhanced body diode performance | VSD = 0.70V @ 1A ensures low-loss freewheeling in synchronous rectification and reverse-current protection circuits. |
| Thermally optimized PowerDI3333-8 | RθJC = 14°C/W and exposed drain pad allow direct thermal coupling to PCB-no external heatsink required for ≤1.8W dissipation. |
| Green, halogen-free construction | <900ppm Br, <900ppm Cl, <1000ppm Sb; compliant with RoHS 3 and JEDEC J-STD-020 Level 1 moisture sensitivity. |
Applications
| DC-DC Converter High-Side Switch | USB-C Load Switch |
|---|---|
|
Use Scenario: Dual-phase 12V-to-1V VRM for FPGA core supply, requiring independent high-side control per phase with minimal conduction loss. IC Role / Device Role / Timing Role: High-side synchronous rectifier switch; operates at 500kHz with 10V gate drive and 20A peak current per channel. Use Value: 7.6mΩ RDS(ON) limits conduction loss to <3.0W per phase at full load, improving overall converter efficiency by ≥1.2% vs. discrete single-channel alternatives. |
Use Scenario: Dual-rail USB-C port controller managing VBUS and VCONN power delivery with overcurrent and reverse-polarity protection. IC Role / Device Role / Timing Role: Dual independent load switch controlling 5V VBUS and 3.3V VCONN rails; driven by MCU GPIOs with 4.5V logic levels. Use Value: 10mΩ RDS(ON) @ 4.5V ensures <50mV drop at 5A, preserving USB-C voltage tolerance while supporting hot-plug sequencing. |
| Industrial I/O Module Protection | Automotive Body Control Unit |
|
Use Scenario: 24V digital output module protecting PLC field wiring against short-circuit and inductive kickback. IC Role / Device Role / Timing Role: Dual-channel protected switch with integrated body diode clamping; configured as common-drain high-side driver. Use Value: 90A pulsed drain rating and 58mJ avalanche energy enable safe interruption of 200ms inductive transients without external snubbers. |
Use Scenario: Seat control ECU driving dual 12V motors (lumbar + recliner) with independent direction and stall detection. IC Role / Device Role / Timing Role: H-bridge half-leg driver; each channel controls one motor terminal with PWM at 20kHz. Use Value: Matched RDS(ON) ensures balanced torque and eliminates directional bias; low Crss (72pF) suppresses shoot-through risk during dead-time transitions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMT3006LSD-7 | Same die, but PowerDI3333-8 (Type UXD) package with different pinout: G1/S1/D1/G2/S2/D2 sequence; no exposed drain pad. | Lacks thermal slug; RθJA = 134°C/W limits continuous current to 12A without forced air. | Select only when board space prohibits exposed-pad layout or thermal requirements are ≤0.9W per channel. |
| DMN3025LSD-13 | Single-channel 30V/25A MOSFET in PowerDI3333-8 (UXD); RDS(ON) = 2.5mΩ @ 10V but no second channel. | Requires two devices for dual functionality; increases BOM count and layout area by ~35%. | Prefer when channel independence is critical and thermal budget allows higher RDS(ON) per channel. |
Compared with DMT3006LSD-7, DMT3006LDV-7 offers superior thermal performance via its exposed drain pad; compared with DMN3025LSD-13, it delivers dual-channel integration in one footprint-reducing PCB area by 40% and eliminating inter-device timing skew in synchronized switching.
Availability
DMT3006LDV-7 is available at Aetrix Electronics and suitable for DC-DC converter high-side switching, USB-C load management, and industrial I/O protection requiring stable component supply across automotive, industrial automation, and embedded computing programs.
Supply support for DMT3006LDV-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in China, Taiwan, and the US.
The PowerDI® MOSFET product line targets high-efficiency power conversion and intelligent load switching, emphasizing low RDS(ON), fast switching, and thermally robust packaging for space-constrained applications.
FAQ
What is the maximum continuous drain current per channel at TC = +70°C?
The DMT3006LDV-7 supports 20A continuous drain current per channel when case temperature is maintained at +70°C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the PowerDI3333-8 package and requires adequate PCB copper area to sustain junction temperature below +150°C.
Can the two channels be operated with independent gate drives and shared source connections?
Yes-the S1 and S2 terminals are electrically isolated and can be independently routed or externally shorted. When tied together, the device functions as a dual common-source switch; when kept separate, it supports independent load control or half-bridge topologies with discrete high-side and low-side drivers.
Is the exposed drain pad internally connected to both D1 and D2 pins?
Yes-the exposed drain pad is electrically and thermally connected to both PIN1 (D1) and PIN4 (D2). This shared connection enables simultaneous heat extraction from both channels and simplifies PCB thermal design, but prevents independent drain potential control.
What is the typical reverse recovery charge (QRR) of the integrated body diode?
The typical reverse recovery charge is 8.6nC, measured at IF = 1.5A and di/dt = 100A/μs. This low QRR minimizes switching losses during freewheeling in synchronous rectifiers and reduces EMI generation in high-frequency power stages.
DMT3006LDV-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerVDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 30V
- Current - Continuous Drain (Id) @ 25°C:
- 25A (Tc)
- Rds On (Max) @ Id, Vgs:
- 10mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 16.7nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1155pF @ 15V
- Power - Max:
- 900mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerDI3333-8 (Type UXC)
DMT3006LDV-7 FAQ
1.How can I place an order for DMT3006LDV-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMT3006LDV-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMT3006LDV-7 reliable?
The price and inventory of DMT3006LDV-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT3006LDV-7 is usually 5 days.
3.What payment methods are accepted for DMT3006LDV-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT3006LDV-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMT3006LDV-7?
DMT3006LDV-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMT3006LDV-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMT3006LDV-7?
For technical support, including DMT3006LDV-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT3006LDV-7 requirements.
6.How does Aetrix verify that DMT3006LDV-7 is sourced from the original manufacturer or authorized distributors?
All DMT3006LDV-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT3006LDV-7 meets industry standards.
7.What is the process for return or replacement of DMT3006LDV-7?
All DMT3006LDV-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMT3006LDV-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMT3006LDV-7 part is unused and in its original packaging.
Return procedure for DMT3006LDV-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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