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Diodes Incorporated DMT3006LFDF-13

Part No.:
DMT3006LFDF-13
Manufacturer:
Diodes Incorporated
Category:
FETs, MOSFETs
Package:
6-UDFN Exposed Pad
Datasheet:
AetrixDMT3006LFDF-13.pdf
Description:
MOSFET N-CH 30V 14.1A 6UDFN
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,597

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Product details

Overview

DMT3006LFDF-13 from Diodes Incorporated is an N-channel enhancement-mode MOSFET optimized for high-efficiency power management, featuring 7 mΩ RDS(ON) at VGS = 10 V, 30 V VDSS, 14.1 A continuous drain current at 25°C, and U-DFN2020-6 (Type F) package. It serves as a synchronous rectifier or main switch in compact DC-DC converters.

For engineers reviewing the DMT3006LFDF-13 datasheet, DMT3006LFDF-13 pinout, DMT3006LFDF-13 application, or DMT3006LFDF-13 equivalent, key selection criteria include low-profile thermal performance (0.6 mm height), gate threshold voltage range (1.0–3.0 V), and validated AEC-Q101 qualification for automotive-grade reliability.

Technical Context

This MOSFET employs a trench-gate process to achieve ultra-low on-resistance while maintaining fast switching speed (tD(ON) = 3.5 ns, tF = 4.6 ns) and low gate charge (QG = 8.4 nC at 4.5 V). Its 0.6 mm profile and 4 mm² footprint support space-constrained PCB layouts in portable power systems.

The device integrates a body diode with VSD = 0.7–1.0 V at IS = 2 A and supports avalanche energy of 31 mJ (IAS = 25 A), enabling robust operation under transient overloads in battery protection circuits.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS 30 V - Maximum blocking voltage compatible with 24 V nominal input rails and 12 V battery systems.
RDS(ON) 7 mΩ @ VGS = 10 V - Enables <100 mW conduction loss at 12 A, critical for >95% efficiency in buck converters.
ID (max) 14.1 A @ TA = 25°C - Supports high-current load points in USB PD adapters and portable chargers.
QG 8.4 nC @ VGS = 4.5 V - Reduces gate drive power and enables efficient operation with low-voltage controllers (e.g., 3.3 V logic).
RθJA 60 °C/W (with 1-inch² copper) - Allows 2.1 W power dissipation at +70°C ambient, suitable for unheatsinked industrial modules.
VGS(TH) 1.0–3.0 V - Ensures reliable turn-on with standard logic-level drivers and avoids false triggering in noisy environments.
Package U-DFN2020-6 (Type F) - 2.0 × 2.0 mm footprint with exposed drain pad for enhanced thermal transfer to PCB ground plane.

Pinout & Package

U-DFN2020-6 (Type F) package with 0.6 mm profile, molded green compound (UL 94V-0), NiPdAu-plated terminals, and moisture sensitivity level 1. Exposed drain pad improves thermal resistance to PCB.

Pin/Terminal Circuit Role Design Meaning
Pin 1 (Top View) Gate (G) Control terminal accepting logic-level signals; low Ciss (1155 pF) minimizes driver loading.
Pins 2, 3, 4, 5 Drain (D) High-current output path connected to internal die backside; tied to exposed pad for thermal and electrical grounding.
Pin 6 Source (S) Reference node for gate drive and current sensing; low-inductance connection critical for EMI control in switching nodes.

Key Features

Feature Design Value
Low-profile packaging 0.6 mm height enables integration into ultra-thin consumer electronics (e.g., Bluetooth earbuds, wearables).
Thermal performance RθJC = 6.9 °C/W allows direct heat transfer from junction to PCB copper, reducing need for external heatsinks.
AEC-Q101 qualification Validated for automotive applications including battery management systems and ADAS power supplies.
Green material compliance Halogen- and antimony-free (<900 ppm Br/Cl, <1000 ppm Sb) meets strict environmental requirements for EU and Asia markets.
Fast switching capability tD(OFF) = 13.5 ns and QGD/QGS = 1.6:1 ratio enable clean zero-voltage switching in resonant topologies.

Applications

Battery Protection Circuit USB-C Power Delivery Module

Use Scenario: Overcurrent and short-circuit protection in lithium-ion battery packs for power tools and e-bikes.

IC Role / Device Role / Timing Role: Primary high-side switch controlling battery discharge path; responds within microseconds to fault conditions.

Use Value: Low RDS(ON) reduces voltage drop during normal operation, preserving battery runtime; avalanche rating handles inductive kickback from motor loads.

Use Scenario: Synchronous rectification in 20–100 W USB-C PD adapters for laptops and tablets.

IC Role / Device Role / Timing Role: Secondary-side MOSFET replacing Schottky diode in LLC or buck-boost converters.

Use Value: 7 mΩ RDS(ON) cuts conduction losses by >40% vs. 40 V Schottky, enabling >94% peak efficiency at full load.

Automotive Body Control Module Industrial IoT Sensor Node

Use Scenario: Load switching for LED lighting, window motors, and HVAC actuators in 12 V vehicle subsystems.

IC Role / Device Role / Timing Role: Low-side driver controlled by microcontroller GPIO; supports PWM dimming up to 20 kHz.

Use Value: AEC-Q101 qualification ensures operation across –40°C to +125°C junction temperature; low VGS(TH) guarantees turn-on with 3.3 V MCU outputs.

Use Scenario: Power gating for ultra-low-power sensors (e.g., CO₂, humidity) in battery-operated edge devices.

IC Role / Device Role / Timing Role: High-efficiency load switch isolating peripherals during sleep mode.

Use Value: 1 µA IDSS leakage preserves battery life over multi-year deployments; 4 mm² footprint conserves limited PCB area.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
DMT3006LSDQ-7 Same die, but in SOT-23-6 package with higher RθJA (155 °C/W) and larger 2.9 × 2.8 mm footprint. Limited to lower-power applications (<1.5 W continuous) due to reduced thermal capability. Select when legacy SOT-23 layout compatibility is required and board space permits larger footprint.
DMN3026LFG-7 Higher RDS(ON) (12 mΩ @ 4.5 V), same U-DFN2020-6 package, but rated only to 20 V VDSS. Not suitable for 24 V input systems; better suited for 5–12 V point-of-load regulators. Choose where cost sensitivity outweighs efficiency needs and input voltage remains ≤15 V.

Compared with DMT3006LFDF-13, DMT3006LSDQ-7 trades thermal performance for package familiarity, while DMN3026LFG-7 sacrifices voltage rating and on-resistance for lower unit cost-making the DMT3006LFDF-13 optimal for space- and efficiency-constrained 24 V power stages.

Availability

DMT3006LFDF-13 is available at Aetrix Electronics and suitable for battery management systems, USB-C power delivery modules, and automotive body control units requiring stable component supply across production lifecycles.

Supply support for DMT3006LFDF-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management solutions for automotive, industrial, and consumer markets.

The DMT3006LFDF belongs to Diodes' "PowerMOS" product line, engineered specifically for high-efficiency, low-profile DC-DC conversion and battery protection in space-constrained applications.

FAQ

What is the maximum operating junction temperature for DMT3006LFDF-13?

The device is rated for TJ = –55°C to +150°C. Its RDS(ON) increases by ~1.8× from 25°C to 125°C at VGS = 10 V, and thermal design must ensure junction temperature stays below 150°C under worst-case power dissipation and ambient conditions.

Does DMT3006LFDF-13 require a gate resistor for stability?

A gate resistor (typically 3–10 Ω) is recommended to dampen ringing caused by gate-drain capacitance (Crss = 72 pF) and PCB trace inductance. The datasheet specifies tD(ON) and tF test conditions using RG = 3 Ω, confirming its use in high-speed switching designs.

Can DMT3006LFDF-13 be used in parallel configurations?

Yes-its positive temperature coefficient for RDS(ON) (normalized RDS(ON) rises with TJ) enables inherent current sharing. Layout symmetry and matched gate drive paths are essential to avoid imbalance; derating total current by 15% is advised per JEDEC guidelines.

Is the U-DFN2020-6 (Type F) package compatible with standard reflow profiles?

Yes-the package is qualified for IPC/JEDEC J-STD-020 Level 1 moisture sensitivity and supports standard lead-free reflow profiles (peak 260°C). The NiPdAu finish ensures reliable solder wetting, and the exposed drain pad requires thermal via placement per Diodes' recommended pad layout (X2 = 0.950 mm, Y2 = 1.150 mm).

DMT3006LFDF-13 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
6-UDFN Exposed Pad
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
14.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
3.7V, 10V
Rds On (Max) @ Id, Vgs:
7mOhm @ 9A, 10V
Vgs(th) (Max) @ Id:
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
22.6 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1320 pF @ 15 V
FET Feature:
-
Power Dissipation (Max):
800mW (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
U-DFN2020-6 (Type F)

DMT3006LFDF-13 FAQ

1.How can I place an order for DMT3006LFDF-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMT3006LFDF-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMT3006LFDF-13 reliable?

The price and inventory of DMT3006LFDF-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT3006LFDF-13 is usually 5 days.

3.What payment methods are accepted for DMT3006LFDF-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT3006LFDF-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMT3006LFDF-13?

DMT3006LFDF-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMT3006LFDF-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMT3006LFDF-13?

For technical support, including DMT3006LFDF-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT3006LFDF-13 requirements.

6.How does Aetrix verify that DMT3006LFDF-13 is sourced from the original manufacturer or authorized distributors?

All DMT3006LFDF-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT3006LFDF-13 meets industry standards.

7.What is the process for return or replacement of DMT3006LFDF-13?

All DMT3006LFDF-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMT3006LFDF-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMT3006LFDF-13 part is unused and in its original packaging.

Return procedure for DMT3006LFDF-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMT3006LFDF-13 Tags

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