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Diodes Incorporated DMT3006LFV-13
- Part No.:
- DMT3006LFV-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerVDFN
- Datasheet:
-
DMT3006LFV-13.pdf
- Description:
- MOSFET N-CH 30V 60A POWERDI3333
- Quantity:
- Payment:
- Shipping:
Inventory:2,875
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Product details
Overview
DMT3006LFV-13 from Diodes Incorporated is a 30V N-channel enhancement-mode MOSFET in PowerDI3333-8 (Type UX) package, delivering 7 mΩ RDS(ON) at VGS = 10 V and 60 A continuous drain current at TC = +25°C. It serves as a high-efficiency power switch in DC-DC converters and load switching circuits where low conduction loss and compact board footprint are critical.
For engineers reviewing the DMT3006LFV-13 datasheet, DMT3006LFV-13 pinout, DMT3006LFV-13 application, or DMT3006LFV-13 equivalent, key selection criteria include RDS(ON) at 4.5 V (11 mΩ), thermal resistance RθJC = 2.9 °C/W, safe operating area under pulsed conditions, and compatibility with space-constrained PCB layouts requiring <33% of SO-8 board area.
Technical Context
This MOSFET employs trench-gate silicon process technology to achieve low on-resistance while maintaining fast switching performance via optimized gate charge (Qg = 16.7 nC at VGS = 10 V). Its body diode exhibits 19.3 ns reverse recovery time and 8.6 nC QRR, supporting synchronous rectification in buck converters.
The device operates across –55°C to +150°C junction temperature range and features ±20 V gate-source voltage rating, enabling robust drive margin against transient overvoltage. Its PowerDI3333-8 package integrates an exposed drain pad for direct thermal coupling to PCB copper, yielding RθJC = 2.9 °C/W and RθJA = 63 °C/W under 2 oz copper thermal bias.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30 V - Maximum blocking voltage before avalanche onset; suitable for 24 V rail systems with margin. |
| RDS(ON) @ VGS = 10 V | 7 mΩ - Enables ≤4.2 W conduction loss at 60 A, critical for high-current power stages. |
| RDS(ON) @ VGS = 4.5 V | 11 mΩ - Supports logic-level gate drive from 3.3 V/5 V controllers without level-shifting. |
| Qg (10 V) | 16.7 nC - Determines gate driver power requirement and switching transition time in hard-switched topologies. |
| RθJC | 2.9 °C/W - Allows direct thermal path to heatsink or internal copper plane; enables >2 W continuous dissipation with minimal ΔT. |
| ID (TC = 25°C) | 60 A - Continuous current rating defined at case temperature; requires proper PCB thermal design to sustain. |
| trr | 19.3 ns - Fast body diode recovery reduces switching losses and ringing in freewheeling paths. |
Pinout & Package
Package: PowerDI3333-8 (Type UX), surface-mount, thermally enhanced with exposed drain pad. Dimensions: 3.30 mm × 3.30 mm × 0.80 mm (L × W × H); moisture sensitivity level 1 per J-STD-020.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 5, 6, 7 | Drain (D) | Seven parallel drain terminals connected to exposed metal pad - primary current path and thermal conduction path to PCB. |
| 8 | Gate (G) | Single gate input - controls channel conduction; requires <±20 V drive and low-impedance source for fast switching. |
| - | Source (S) | Internally tied to pins 1–7 via substrate; external source connection made through separate S terminal (not present - source is common to drain-side package frame). |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(ON) at 4.5 V | 11 mΩ - Enables efficient operation with standard logic-level microcontrollers and PMICs without gate boosting. |
| Thermally optimized package | RθJC = 2.9 °C/W - Delivers >2× thermal performance vs. SO-8, allowing higher power density in constrained spaces. |
| Small footprint | 3.3 mm × 3.3 mm - Occupies only 33% of SO-8 board area, reducing PCB real estate and layer count in portable designs. |
| Green construction | Halogen- and antimony-free, RoHS 3 compliant - Meets environmental compliance requirements for global industrial and consumer shipments. |
Applications
| DC-DC Buck Converter | Hot-Swap Controller |
|---|---|
Use Scenario: High-current step-down conversion in telecom power modules supplying 12 V or 5 V rails from 24 V input. IC Role / Device Role: Synchronous high-side power switch handling up to 60 A continuous current with minimal I²R loss. Use Value: 7 mΩ RDS(ON) at 10 V reduces conduction loss by >35% versus comparable SO-8 MOSFETs, improving full-load efficiency above 94%. | Use Scenario: Inrush current limiting and fault isolation in server backplane power distribution units. IC Role / Device Role: Low-RDS(ON) load switch placed between input supply and downstream circuitry. Use Value: 11 mΩ RDS(ON) at 4.5 V ensures <50 mV drop at 4.5 A, preserving voltage margin during hot-plug events. |
| Motor Driver H-Bridge | USB-C Power Delivery Switch |
Use Scenario: Half-bridge leg in 24 V brushed DC motor control for industrial actuators. IC Role / Device Role: Low-side switching element with fast body diode recovery for PWM commutation. Use Value: 19.3 ns trr minimizes shoot-through risk and reduces snubber losses during dead-time transitions. | Use Scenario: VBUS path switch in USB-C PD sink applications requiring bidirectional 3 A/20 V capability. IC Role / Device Role: Compact, low-loss power switch enabling dual-role port implementation in thin client devices. Use Value: 3.3 mm × 3.3 mm footprint allows integration into tight 4-layer mobile PCBs without compromising thermal performance. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMT3006LSD-13 | Same die, SO-8 package - larger footprint (5.0 mm × 6.0 mm), RθJA = 62 °C/W (2 oz copper), RDS(ON) identical. | Preferred where legacy SO-8 layout reuse is required; unsuitable for ultra-dense designs. | Select when board rework is impractical but thermal budget permits larger package. |
| DMN3026LFG-7 | 30 V, 6.5 mΩ @ 10 V, PowerDI3333-8 - slightly lower RDS(ON), same footprint, Qg = 15.5 nC. | Better efficiency at high current; identical thermal and layout compatibility. | Choose for marginal efficiency gains where gate drive capability supports 15.5 nC charge. |
Compared with DMT3006LFV-13, DMT3006LSD-13 trades board area for easier thermal management in less dense assemblies, while DMN3026LFG-7 offers marginally lower conduction loss without changing layout or thermal design - making it a drop-in upgrade where gate drive strength permits.
Availability
DMT3006LFV-13 is available at Aetrix Electronics and suitable for DC-DC converters, hot-swap controllers, and motor drivers requiring stable component supply, consistent parametric performance, and long-term production continuity.
Supply support for DMT3006LFV-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-performance, high-reliability components for power management, signal integrity, and protection applications.
The DMT3006LFV belongs to Diodes' PowerMOS™ portfolio, engineered specifically for high-current, low-voltage switching in space-constrained power systems - emphasizing RDS(ON) optimization, thermal efficiency, and green manufacturing compliance.
FAQ
What is the maximum continuous drain current for DMT3006LFV-13 at TC = +70°C?
The datasheet specifies 45 A continuous drain current at case temperature +70°C, reflecting derating due to thermal resistance and junction temperature limits. This value assumes proper PCB thermal design with 2 oz copper and thermal vias to maintain TJ ≤ 150°C under steady-state operation.
Does DMT3006LFV-13 support gate drive from a 3.3 V microcontroller?
Yes - its gate threshold voltage (VGS(TH)) ranges from 1.0 V to 3.0 V, and RDS(ON) is specified at 4.5 V (11 mΩ), confirming reliable enhancement-mode turn-on with 3.3 V logic. However, full 60 A capability requires ≥4.5 V gate drive to minimize on-resistance.
How does the PowerDI3333-8 package improve thermal performance over SO-8?
The PowerDI3333-8 exposes the drain directly to the PCB via a large metal pad, achieving RθJC = 2.9 °C/W - nearly 5× better than typical SO-8 RθJC (~14 °C/W). This allows >2 W power dissipation with <6°C rise above board temperature when using 2 oz copper thermal planes.
Is DMT3006LFV-13 suitable for synchronous rectification in buck converters?
Yes - its body diode has trr = 19.3 ns and QRR = 8.6 nC, enabling efficient synchronous operation at frequencies up to 1 MHz. The low RDS(ON) also minimizes conduction loss during the synchronous FET's on-time, improving light-load efficiency.
DMT3006LFV-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerVDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 7mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 8.4 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1155 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerDI3333-8
DMT3006LFV-13 FAQ
1.How can I place an order for DMT3006LFV-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMT3006LFV-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMT3006LFV-13 reliable?
The price and inventory of DMT3006LFV-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT3006LFV-13 is usually 5 days.
3.What payment methods are accepted for DMT3006LFV-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT3006LFV-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMT3006LFV-13?
DMT3006LFV-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMT3006LFV-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMT3006LFV-13?
For technical support, including DMT3006LFV-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT3006LFV-13 requirements.
6.How does Aetrix verify that DMT3006LFV-13 is sourced from the original manufacturer or authorized distributors?
All DMT3006LFV-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT3006LFV-13 meets industry standards.
7.What is the process for return or replacement of DMT3006LFV-13?
All DMT3006LFV-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMT3006LFV-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMT3006LFV-13 part is unused and in its original packaging.
Return procedure for DMT3006LFV-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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