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Diodes Incorporated DMT3006LPB-13
- Part No.:
- DMT3006LPB-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 8-PowerTDFN
- Datasheet:
-
DMT3006LPB-13.pdf
- Description:
- MOSFET 2N-CH 11A POWERDI5060-8
- Quantity:
- Payment:
- Shipping:
Inventory:3,726
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Product details
Overview
DMT3006LPB-13 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in a PowerDI5060-8 (Type S) package, integrating two discrete 30V MOSFETs (Q1: 11.1mΩ @ 10V, 35A; Q2: 6.0mΩ @ 10V, 50A) for synchronous power switching in compact DC-DC converters and notebook battery management circuits.
For engineers reviewing the DMT3006LPB-13 datasheet, DMT3006LPB-13 pinout, DMT3006LPB-13 application, or DMT3006LPB-13 equivalent, this device supports high-efficiency load switching with thermally optimized dual-die layout, low gate charge (QG = 12.6nC / 16.7nC), and fast switching (tR = 3.3ns / 5.5ns) under 4.5V–10V drive conditions.
Technical Context
This dual MOSFET uses separate gate terminals (G1, G2) and shared source terminals (S1/D2, S2) to enable independent control of each channel in buck converter topologies or dual-load switch configurations. Its PowerDI5060-8 package features an exposed drain pad for Q1 and Q2, enabling low RθJC = 4°C/W thermal resistance per channel.
The device supports logic-level (4.5V) and standard (10V) gate drive, with VGS(TH) ranging 1.0–3.0V for both channels and body diode forward voltage VSD ≤ 1.2V at IS = 10A (Q1) or 2A (Q2), ensuring reliable reverse recovery (tRR = 15.6ns / 19.3ns) in synchronous rectification.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| BVDSS | 30V - Maximum blocking voltage for both Q1 and Q2, suitable for 24V input rail systems. |
| RDS(ON) Q1 @ 10V | 11.1mΩ - On-resistance at VGS = 10V, ID = 11.5A; determines conduction loss in high-current paths. |
| RDS(ON) Q2 @ 10V | 6.0mΩ - Lower on-resistance than Q1, optimized as main power switch in asymmetric current-sharing designs. |
| QG Q1 / Q2 | 12.6nC / 16.7nC - Total gate charge at VGS = 10V; directly impacts driver power and switching loss at 1–2MHz frequencies. |
| ID Continuous TC=25°C | 35A / 50A - Maximum steady-state drain current per channel at case temperature 25°C, defined by thermal limits. |
| Ciss Q1 / Q2 | 841pF / 1155pF - Input capacitance at VDS = 15V; influences gate drive strength requirements and EMI behavior. |
| RθJC | 4°C/W - Junction-to-case thermal resistance per channel; enables direct heatsinking via exposed drain pads. |
Pinout & Package
Package: PowerDI5060-8 (Type S), surface-mount, thermally enhanced with dual exposed drain pads (D1 for Q1, D2/S1 for Q2), 8-terminal configuration, UL 94V-0 molding compound, 0.097g mass.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G1 | Gate of Q1 | Independent control input for first N-channel MOSFET; requires dedicated gate resistor for turn-on/turn-off timing. |
| D1 | Drain of Q1 | Exposed copper pad; primary heat path to PCB; electrically connected to Q1 drain only. |
| S1/D2 | Source of Q1 / Drain of Q2 | Internally tied node; serves as common connection point between Q1 source and Q2 drain in cascode or half-bridge arrangements. |
| G2 | Gate of Q2 | Independent control input for second N-channel MOSFET; isolated from G1 to prevent cross-talk. |
| S2 | Source of Q2 | Shared source terminal for Q2; electrically isolated from S1 except through internal connection at S1/D2. |
Key Features
| Feature | Design Value |
|---|---|
| Thermally efficient dual-exposed-pad layout | Enables simultaneous thermal dissipation from Q1 and Q2 via separate D1 and S1/D2 pads, reducing junction temperature rise by >25% vs. single-pad packages. |
| Low RDS(ON) asymmetry (Q1/Q2) | 11.1mΩ / 6.0mΩ at 10V allows optimized current sharing-Q2 handles higher load current while Q1 manages auxiliary or sensing functions. |
| Fast switching with low Crss | Crss = 51pF (Q1) / 72pF (Q2) minimizes Miller effect, supporting clean turn-off even with moderate gate drive impedance. |
| Logic-level compatible operation | VGS(TH) = 1.0–3.0V and RDS(ON) = 14.0mΩ / 10.0mΩ @ 4.5V enable direct interface with 3.3V/5V microcontrollers without level-shifting. |
Applications
| Notebook Battery Protection Circuit | High-Density DC-DC Buck Converter |
|---|---|
Use Scenario: Dual-MOSFET back-to-back configuration isolates battery from system during overvoltage, overcurrent, or short-circuit events. IC Role / Device Role / Timing Role: Q1 and Q2 operate as series-connected load switches controlled by battery management IC; coordinated gate timing prevents shoot-through. Use Value: Low RDS(ON) asymmetry reduces power loss during normal operation, while shared S1/D2 node simplifies PCB routing and improves fault-current detection accuracy. |
Use Scenario: Synchronous rectification stage in 12V-to-1V VRM for CPU/GPU power delivery. IC Role / Device Role / Timing Role: Q2 acts as high-side switch (50A capability), Q1 as low-side switch (35A), driven by PWM controller with dead-time control. Use Value: Dual 30V rating and fast tR/tF (3.3ns/5.5ns) support >1MHz switching, minimizing output filter size while maintaining <15mΩ total conduction path resistance. |
| USB-C Power Delivery Load Switch | Industrial 24V Distributed Power Rail |
Use Scenario: In-line power path control for USB-C PD sink applications requiring programmable current limiting and reverse polarity protection. IC Role / Device Role / Timing Role: Q1 and Q2 configured as parallel-source load switch with independent gate control for soft-start and inrush current management. Use Value: Low QG (12.6nC/16.7nC) enables precise gate timing with small external RC networks, achieving <100µs turn-on delay and <1ms full ramp-up. |
Use Scenario: Redundant 24V power distribution with hot-swap capability across multiple subsystems in PLC or motor drive enclosures. IC Role / Device Role / Timing Role: Q1 and Q2 used as independent load switches per subsystem, sharing common ground but isolated drain paths. Use Value: Independent gate terminals (G1/G2) and thermally isolated drain pads allow independent thermal monitoring and failure containment without cross-channel derating. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMT3006LPS-13 | Same die, identical RDS(ON) and QG specs, but in PowerDI3333-8 package with single shared drain pad. | Limited to lower-power applications (<25A/channel) due to higher RθJA (116°C/W vs. 4°C/W per channel). | Select when board space is constrained and thermal budget allows higher junction temperature rise. |
| DMN3025LFD-13 | Single-channel 30V MOSFET (2.5mΩ @ 10V, 60A), no integrated dual topology or S1/D2 node. | Requires two discrete devices and additional PCB routing for dual-switch functions; lacks shared-source convenience. | Select when maximum current density per channel is critical and layout complexity is acceptable. |
Compared with DMT3006LPB-13, DMT3006LPS-13 sacrifices thermal performance for smaller footprint, while DMN3025LFD-13 offers lower RDS(ON) per channel but eliminates integrated dual-channel coordination and shared-node benefits essential for compact synchronous designs.
Availability
DMT3006LPB-13 is available at Aetrix Electronics and suitable for notebook battery management, high-density DC-DC converters, and USB-C power delivery load switching requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.
Supply support for DMT3006LPB-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-efficiency power management solutions for consumer, computing, and industrial markets.
The DMT3006LPB belongs to Diodes' PowerDI® dual-MOSFET product line, engineered specifically for space-constrained, thermally demanding synchronous switching applications where independent gate control and dual-exposed thermal pads are required.
FAQ
What is the maximum continuous drain current for each channel at 70°C case temperature?
At TC = +70°C, Q1 supports 27A and Q2 supports 40A under VGS = 10V drive. These values derive from the device's thermal derating curve and are validated per Note 7 in the datasheet using the 4°C/W RθJC value and 150°C maximum junction temperature limit.
Can the S1/D2 pin be used as a Kelvin sense connection for current monitoring?
No-S1/D2 is an internally bonded node connecting Q1 source to Q2 drain and is not isolated for sensing. For accurate current measurement, external shunt resistors or dedicated current-sense MOSFETs must be used upstream or downstream of the DMT3006LPB-13.
Is the PowerDI5060-8 (Type S) package compatible with standard reflow profiles for lead-free assembly?
Yes-the device is fully RoHS-compliant and rated for JEDEC Level 3 moisture sensitivity. It supports peak reflow temperatures up to 260°C per J-STD-020, with recommended preheat (150–200°C), soak (183–205°C), and ramp rates aligned to IPC-J-STD-020 Class 3 guidelines.
How does the body diode performance differ between Q1 and Q2 channels?
Q1's body diode has VSD = 0.8–1.2V at IS = 10A and tRR = 15.6ns; Q2's is rated at VSD = 0.7–1.2V at IS = 2A and tRR = 19.3ns. The lower forward voltage of Q2 suits low-voltage, high-current freewheeling, while Q1's faster recovery better handles higher-frequency reverse recovery stress.
DMT3006LPB-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerTDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- -
- Current - Continuous Drain (Id) @ 25°C:
- 11A (Ta), 35A (Tc), 14A (Ta), 50A (Tc)
- Rds On (Max) @ Id, Vgs:
- 11.1mOhm @ 11.5A, 10V, 6mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- Power - Max:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerDI5060-8 (Type S)
DMT3006LPB-13 FAQ
1.How can I place an order for DMT3006LPB-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMT3006LPB-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMT3006LPB-13 reliable?
The price and inventory of DMT3006LPB-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT3006LPB-13 is usually 5 days.
3.What payment methods are accepted for DMT3006LPB-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT3006LPB-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMT3006LPB-13?
DMT3006LPB-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMT3006LPB-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMT3006LPB-13?
For technical support, including DMT3006LPB-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT3006LPB-13 requirements.
6.How does Aetrix verify that DMT3006LPB-13 is sourced from the original manufacturer or authorized distributors?
All DMT3006LPB-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT3006LPB-13 meets industry standards.
7.What is the process for return or replacement of DMT3006LPB-13?
All DMT3006LPB-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMT3006LPB-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMT3006LPB-13 part is unused and in its original packaging.
Return procedure for DMT3006LPB-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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