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Diodes Incorporated DMT3008LFDF-13
- Part No.:
- DMT3008LFDF-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 6-UDFN Exposed Pad
- Datasheet:
-
DMT3008LFDF-13.pdf
- Description:
- MOSFET N-CH 30V 12A 6UDFN
- Quantity:
- Payment:
- Shipping:
Inventory:9,583
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Product details
Overview
DMT3008LFDF-13 from Diodes Incorporated is a 30V N-channel enhancement-mode MOSFET in U-DFN2020-6 package, featuring 10mΩ RDS(ON) @ VGS = 10V, 10.4A ID max @ VGS = 4.5V, and 1.0–3.0V gate threshold voltage. It serves as a low-profile power switch in DC-DC converters and load management circuits.
For engineers reviewing the DMT3008LFDF-13 datasheet, DMT3008LFDF-13 pinout, DMT3008LFDF-13 application, or DMT3008LFDF-13 equivalent, key selection criteria include its 0.6mm profile, 4mm² PCB footprint, low RDS(ON) at 4.5V drive, thermal resistance of 60.8°C/W (with copper pad), and AEC-Q101 readiness for automotive-grade power switching.
Technical Context
This MOSFET employs trench-gate silicon technology optimized for low conduction loss and fast switching. Its 14nC total gate charge (VGS = 10V) and 5.8nC at 4.5V enable efficient operation in synchronous buck stages with 3.3V/5V gate drivers.
The device integrates a body diode with 1.2V forward voltage at 2A and exhibits 18.4ns reverse recovery time, supporting high-frequency hard-switched topologies. Thermal design is enabled by its 13°C/W junction-to-case resistance and validated SOA up to 100µs pulses at 70A.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30V - Maximum drain-source blocking voltage for 12V rail switching and USB PD input stages. |
| RDS(ON) | 10mΩ @ VGS = 10V - Enables ≤120mW conduction loss at 12A, critical for thermally constrained portable power modules. |
| ID max | 10.4A @ VGS = 4.5V - Supports logic-level drive from microcontrollers and PMICs without level-shifting circuitry. |
| Qg | 5.8nC @ VGS = 4.5V - Reduces gate drive power and enables <10ns turn-on delay in high-efficiency point-of-load regulators. |
| RθJA | 60.8°C/W (with 1-inch² copper) - Allows 2.1W continuous dissipation at +70°C ambient when using recommended PCB layout. |
| VGS(TH) | 1.0–3.0V - Ensures reliable turn-on with 3.3V GPIOs while avoiding false triggering from noise below 1V. |
| Ciss | 886pF - Limits Miller-induced shoot-through risk in half-bridge configurations operating above 1MHz. |
Pinout & Package
U-DFN2020-6 (Type F) package: 2.0mm × 2.0mm × 0.6mm, no leads, bottom-side thermal pad, NiPdAu-plated terminals, moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Source) | Source terminal (S) | Primary current return path; connected to PCB ground plane for thermal and EMI control. |
| 2 (Gate) | Gate terminal (G) | High-impedance control input; requires <5.8nC charge for full enhancement at 4.5V. |
| 3 (Drain) | Drain terminal (D) | Main power output node; electrically and thermally coupled to exposed drain pad on bottom side. |
| 4 (Source) | Source terminal (S) | Second source connection for reduced loop inductance in high-di/dt switching paths. |
| 5 (Drain) | Drain terminal (D) | Secondary drain connection reinforcing current handling and thermal conduction to PCB. |
| 6 (Thermal Pad) | Exposed drain pad | Integral thermal interface to PCB copper; must be soldered to maximize RθJA performance. |
Key Features
| Feature | Design Value |
|---|---|
| Low-profile footprint | 0.6mm height enables use in ultra-thin consumer devices such as wearables and slim power banks. |
| 4mm² PCB area | Minimizes board space in multi-MOSFET power stages while maintaining thermal derating margin. |
| Lead-free & halogen-free | Complies with RoHS 3 (2015/863/EU) and Diodes' "Green" standard (<900ppm Br/Cl, <1000ppm Sb). |
| Low VGS(TH) | Guaranteed 1.0–3.0V range ensures compatibility with 3.3V logic and reduces gate driver complexity. |
| Optimized for 4.5V drive | 16mΩ RDS(ON) at 4.5V supports direct interfacing with USB-C PD controllers and battery monitors. |
Applications
| USB-C Power Delivery Switching | Portable Device Load Switch |
|---|---|
|
Use Scenario: Bidirectional 20V/3A power path control in USB-C port controllers. IC Role / Device Role / Timing Role: High-side load switch enabling/disabling VBUS under firmware control with fast turn-off to prevent fault propagation. Use Value: 10.4A rating and 16mΩ RDS(ON) at 4.5V minimize voltage drop and heat generation during sustained 3A operation. |
Use Scenario: Controlled power-up sequencing for display backlight and camera modules in smartphones. IC Role / Device Role / Timing Role: Low-side switching element driven by baseband processor GPIOs to isolate subsystems during sleep mode. Use Value: 1.0–3.0V VGS(TH) ensures clean turn-on with 1.8V/3.3V I/O rails; 0.6mm profile avoids interference with stacked flex cables. |
| DC-DC Synchronous Buck High-Side | Automotive Body Control Module |
|
Use Scenario: High-side switch in 5V/3A buck converter supplying SoC core voltage in IoT edge nodes. IC Role / Device Role / Timing Role: Fast-switching power transistor with 3.8ns tD(ON) and 1.7ns tR to sustain >1MHz operation. Use Value: 5.8nC Qg at 4.5V reduces gate driver losses and enables use of integrated PMIC gate drivers without external buffers. |
Use Scenario: 12V load switching for LED interior lighting and window motor control in passenger vehicles. IC Role / Device Role / Timing Role: AEC-Q101-qualified discrete switch replacing mechanical relays for improved reliability and PWM dimming capability. Use Value: -55°C to +150°C operating range and 8A avalanche current rating support harsh under-hood environments and inductive load transients. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN3020LFG-7 | Higher RDS(ON) (20mΩ @ 4.5V), same U-DFN2020-6 package, lower ID (6.5A). | Less suitable for >6A continuous loads; better for cost-sensitive, lower-current bias rails. | Select when thermal budget allows higher conduction loss and peak current is ≤6.5A. |
| Si2308DS-T1-GE3 | Higher VGS(TH) (1.2–2.5V typ), 22mΩ @ 4.5V, same footprint but 1.0mm height. | Marginally slower switching (Qg = 8.5nC); less ideal for >500kHz SMPS due to higher gate charge. | Choose only if existing layout uses taller Si23xx series and gate drive voltage exceeds 4.5V. |
Compared with DMT3008LFDF-13, DMN3020LFG-7 trades off conduction efficiency for lower cost in sub-6A roles, while Si2308DS-T1-GE3 sacrifices switching speed and RDS(ON) for broader legacy footprint compatibility-neither matches its 10.4A/4.5V capability in compact thermal designs.
Availability
DMT3008LFDF-13 is available at Aetrix Electronics and suitable for USB-C power delivery systems, portable device load switching, and automotive body control modules requiring stable component supply and AEC-Q101-aligned reliability.
Supply support for DMT3008LFDF-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and distribution operations across Asia, Europe, and the Americas.
This MOSFET belongs to Diodes' PowerMOS™ portfolio, engineered specifically for high-efficiency, space-constrained power conversion and load management in consumer, computing, and automotive electronics.
FAQ
What is the maximum continuous drain current at 4.5V gate drive and 70°C ambient?
The DMT3008LFDF-13 delivers 8.4A continuous drain current at VGS = 4.5V and TA = +70°C, verified per datasheet Note 6 with 1-inch² copper pad. This value accounts for both RDS(ON) temperature rise and thermal derating, making it suitable for sustained 8A loads in thermally managed handheld devices.
Does this MOSFET require a gate resistor for stability in switching applications?
A gate resistor of 4.7Ω is used in the datasheet's switching characterization (tD(ON), tR), confirming stability with standard RC damping. No external gate resistor is mandatory for basic on/off control, but a 2–10Ω resistor is recommended to suppress ringing in high-di/dt layouts and reduce EMI in buck converters.
Is the exposed thermal pad electrically isolated or connected to the drain?
The exposed pad on the bottom of the U-DFN2020-6 package is internally connected to the drain terminal, as confirmed by the equivalent circuit diagram and mechanical drawings. It must be soldered to a PCB drain-copper pour to achieve the specified RθJA = 60.8°C/W and ensure safe power dissipation.
Can this MOSFET be used in linear regulation mode?
No-it is not characterized or rated for linear (ohmic) operation. The Safe Operating Area (SOA) chart (Figure 13) shows only pulsed and DC boundaries up to 100µs, with no extended linear region. Continuous operation outside the SOA limits risks thermal runaway due to positive temperature coefficient of RDS(ON).
DMT3008LFDF-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-UDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 12A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 10mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 14 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 886 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 800mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- U-DFN2020-6 (Type F)
DMT3008LFDF-13 FAQ
1.How can I place an order for DMT3008LFDF-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMT3008LFDF-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMT3008LFDF-13 reliable?
The price and inventory of DMT3008LFDF-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT3008LFDF-13 is usually 5 days.
3.What payment methods are accepted for DMT3008LFDF-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT3008LFDF-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMT3008LFDF-13?
DMT3008LFDF-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMT3008LFDF-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMT3008LFDF-13?
For technical support, including DMT3008LFDF-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT3008LFDF-13 requirements.
6.How does Aetrix verify that DMT3008LFDF-13 is sourced from the original manufacturer or authorized distributors?
All DMT3008LFDF-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT3008LFDF-13 meets industry standards.
7.What is the process for return or replacement of DMT3008LFDF-13?
All DMT3008LFDF-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMT3008LFDF-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMT3008LFDF-13 part is unused and in its original packaging.
Return procedure for DMT3008LFDF-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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