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Diodes Incorporated DMT3009LDT-7
- Part No.:
- DMT3009LDT-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 8-VDFN Exposed Pad
- Datasheet:
-
DMT3009LDT-7.pdf
- Description:
- MOSFET 2N-CH 30V 30A 8VDFN
- Quantity:
- Payment:
- Shipping:
Inventory:1,809
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Product details
Overview
DMT3009LDT from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in a V-DFN3030-8 (Type K) package, rated for 30V VDSS, 11.1mΩ RDS(ON) @ VGS = 10V, and 30A continuous drain current at TC = +25°C. It integrates two matched silicon die for synchronous buck, load switching, and power OR-ing in compact DC/DC converters.
For engineers reviewing the DMT3009LDT datasheet, DMT3009LDT pinout, DMT3009LDT application, or DMT3009LDT equivalent, key selection criteria include its low gate threshold (1–3V), dual-die thermal coupling in a thermally enhanced DFN, and validated performance at VGS = 4.5V for 3.3V logic-driven power stages.
Technical Context
This dual N-channel MOSFET uses planar trench-gate silicon technology optimized for low RDS(ON) while maintaining fast switching (tR ≤ 10ns, tF ≤ 3ns) and low gate charge (Qg = 13.8–20nC @ 10V). Its symmetric dual-die layout enables balanced current sharing between Q1 and Q2 without external balancing components.
The device features integrated body diodes with low reverse recovery charge (QRR = 7.7–15nC) and fast tRR (18–33ns), supporting high-frequency synchronous rectification. Thermal resistance is specified at RθJC = 7.6°C/W and RθJA = 64°C/W on a 1-inch² copper pad - critical for thermally constrained board layouts.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30V - Maximum blocking voltage for 5V/3.3V input rails and 12V intermediate bus applications. |
| RDS(ON) @ VGS = 10V | 7.2–11.1mΩ - Enables <1W conduction loss at 30A in high-current POL converters. |
| RDS(ON) @ VGS = 4.5V | 10.5–13.8mΩ - Ensures full enhancement with standard 3.3V GPIO or PWM controllers. |
| Qg (10V) | 13.8–20nC - Supports efficient 1–2MHz switching with moderate gate driver strength (e.g., TC4427). |
| TJ Range | −55°C to +150°C - Qualified for industrial and extended-temperature embedded power systems. |
| PD (TA = +70°C) | 1.2W - Defines maximum steady-state dissipation on FR-4 with minimum pad layout per datasheet Fig. 3. |
Pinout & Package
V-DFN3030-8 (Type K) surface-mount package: 3.0mm × 3.0mm footprint, 0.8mm nominal height, exposed thermal pad (Pin 1 marked by dot), NiPdAu-plated terminals, moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Source 1 / Drain 2 (S1/D2) | Common node connecting Q1 source and Q2 drain - used for cascode or half-bridge mid-point routing. |
| 2 | Drain 1 (D1) | High-side switch output for buck high-side or OR-ing path input. |
| 3 | Gate 1 (G1) | Independent control terminal for Q1 - requires dedicated gate resistor and driver path. |
| 4 | Source 1 (S1) | Q1 source node - tied to ground or low-side return in standard configurations. |
| 5 | Source 2 (S2) | Q2 source node - typically connected to output rail or load return. |
| 6 | Gate 2 (G2) | Independent control terminal for Q2 - supports asynchronous or synchronous timing control. |
| 7 | Drain 2 (D2) | Low-side switch output - used as synchronous rectifier or load switch output. |
| 8 | Thermal Pad (EP) | Exposed copper pad - must be soldered to PCB thermal plane for RθJC = 7.6°C/W performance. |
Key Features
| Feature | Design Value |
|---|---|
| Low gate threshold voltage | VGS(TH) = 1–3V ensures reliable turn-on with 3.3V logic and reduces risk of partial enhancement in noisy environments. |
| Dual N-channel topology | Integrated Q1+Q2 in single DFN eliminates layout mismatch, reduces parasitic inductance, and cuts board area vs. discrete pairs. |
| Thermally enhanced DFN | Exposed thermal pad and low RθJC = 7.6°C/W enable >20W power density in space-constrained 12V→5V/3.3V converters. |
| Halogen- and antimony-free "Green" construction | Meets IEC 61249-2-21 and RoHS 3 (2015/863/EU) with Br+Cl <1500ppm and Sb <1000ppm - suitable for automotive Tier-1 supply chains. |
Applications
| DC/DC Synchronous Buck Converter | Redundant Power OR-ing |
|---|---|
Use Scenario: 12V input to 3.3V/5V point-of-load conversion in networking equipment with >92% efficiency target. IC Role / Device Role / Timing Role: Q1 acts as high-side switch; Q2 serves as synchronous rectifier - both driven with complementary 180° phase-shifted PWM. Use Value: Dual-die matching minimizes shoot-through risk and reduces dead-time dependency, enabling stable 1.5MHz operation with <15mΩ total conduction loss. |
Use Scenario: Parallel 12V power supplies feeding a common backplane in telecom shelf systems. IC Role / Device Role / Timing Role: Each DMT3009LDT implements one OR-ing path - Q1 controls upstream supply; Q2 blocks reverse current during fault. Use Value: Low RDS(ON) at 4.5V gate drive reduces voltage drop to <35mV at 20A, improving system efficiency over Schottky diode solutions. |
| Hot-Swap Load Switch | USB-C Power Delivery Path Control |
Use Scenario: Inrush-limited insertion of PCIe add-in cards into live server backplanes. IC Role / Device Role / Timing Role: Q1 functions as main pass transistor; Q2 provides active current limiting via source degeneration feedback. Use Value: Gate threshold tolerance (1–3V) allows precise current limit setting using simple op-amp feedback without external references. |
Use Scenario: Bidirectional 20V/5A power path management in USB-C PD 3.0 sink devices. IC Role / Device Role / Timing Role: Q1 handles forward power delivery; Q2 manages reverse charging (e.g., laptop-to-peripheral power). Use Value: Body diode VSD ≤ 1.2V at 10A enables low-loss reverse conduction, reducing need for additional ideal diode controllers. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMT3009LWQ-7 | Same silicon die, but in WQFN-12 (3×2mm) package with separate G1/G2 pins and no shared S1/D2 node. | Supports independent gate routing and avoids cascode node constraints - better for non-cascoded topologies. | Select when layout requires full pin separation and thermal pad access is less critical than routing flexibility. |
| SIZ340DT-T1-GE3 | Single-die dual N-channel in PowerPAK® 1212-8; RDS(ON) = 12.5mΩ @ 4.5V; Qg = 22nC; no shared S1/D2 terminal. | Larger footprint (3.3×3.3mm), higher gate charge - suited for lower-frequency (<500kHz), higher-current designs where thermal mass matters more than size. | Choose for cost-sensitive industrial SMPS where 1212-8 assembly infrastructure already exists. |
Compared with DMT3009LDT, DMT3009LWQ-7 offers greater layout freedom but sacrifices the compact 3×3mm footprint and cascode-ready S1/D2 node; SIZ340DT trades size and speed for higher current handling and legacy package compatibility.
Availability
DMT3009LDT is available at Aetrix Electronics and suitable for DC/DC converters, redundant power OR-ing, hot-swap load switching, and USB-C power path control requiring stable component supply across industrial, networking, and embedded computing programs.
Supply support for DMT3009LDT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in IATF 16949-certified facilities.
The DMT3009LDT belongs to Diodes' high-efficiency power MOSFET product line, engineered specifically for space-constrained, high-frequency DC/DC conversion and intelligent power distribution in next-generation embedded systems.
FAQ
What is the maximum safe operating junction temperature for DMT3009LDT?
The absolute maximum junction temperature is +150°C, and the device is characterized for RDS(ON) drift and gate threshold stability across −55°C to +150°C. Derating begins at TJ > 125°C per Figure 6 and Figure 7 in DS37810 Rev. 7–2, where normalized RDS(ON) increases by ~25% at 150°C versus 25°C at VGS = 10V.
Can DMT3009LDT be used in a single-ended configuration with only one channel active?
Yes - either Q1 or Q2 can be operated independently while the other channel remains unconnected or grounded. The internal schematic shows electrically isolated dies except for the shared S1/D2 node (Pin 1), so Pin 1 must be properly terminated (e.g., tied to source potential) to avoid floating gate issues when using only one FET.
Is the DMT3009LDT qualified for automotive applications under AEC-Q101?
No - the DMT3009LDT is not AEC-Q101 qualified. Diodes states that automotive-grade versions require specific change control, PPAP capability, and IATF 16949 manufacturing; users needing automotive qualification must contact Diodes directly for part numbers such as DMT3009LDT-AQ or equivalent qualified derivatives.
What is the recommended PCB pad layout for optimal thermal performance?
Per DS37810 Rev. 7–2 page 7, the recommended pad layout uses a 2.55mm × 1.044mm thermal pad (X1 × Y1) with 0.45mm solder mask openings (X, Y), connected to ≥1-inch² internal or external copper pour. Minimum trace width for source/drain connections is 0.5mm to sustain 30A peak current without excessive heating.
DMT3009LDT-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-VDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual) Asymmetrical
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 30V
- Current - Continuous Drain (Id) @ 25°C:
- 30A
- Rds On (Max) @ Id, Vgs:
- 11.1mOhm @ 14.4A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 20nC @ 15V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1500pF @ 15V
- Power - Max:
- 1.2W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- V-DFN3030-8 (Type K)
DMT3009LDT-7 FAQ
1.How can I place an order for DMT3009LDT-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMT3009LDT-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMT3009LDT-7 reliable?
The price and inventory of DMT3009LDT-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT3009LDT-7 is usually 5 days.
3.What payment methods are accepted for DMT3009LDT-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT3009LDT-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMT3009LDT-7?
DMT3009LDT-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMT3009LDT-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMT3009LDT-7?
For technical support, including DMT3009LDT-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT3009LDT-7 requirements.
6.How does Aetrix verify that DMT3009LDT-7 is sourced from the original manufacturer or authorized distributors?
All DMT3009LDT-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT3009LDT-7 meets industry standards.
7.What is the process for return or replacement of DMT3009LDT-7?
All DMT3009LDT-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMT3009LDT-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMT3009LDT-7 part is unused and in its original packaging.
Return procedure for DMT3009LDT-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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