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Diodes Incorporated DMT3009LEV-13
- Part No.:
- DMT3009LEV-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- -
- Datasheet:
-
DMT3009LEV-13.pdf
- Description:
- MOSFET 25V-30V POWERDI3333-8
- Quantity:
- Payment:
- Shipping:
Inventory:5,920
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Product details
Overview
DMT3009LEV-13 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in PowerDI®3333-8 package, rated for 30V VDSS, 12mΩ RDS(ON) @ 10VGS, and 20A continuous drain current at TC = +25°C. It integrates two matched low-RDS(ON) switches optimized for high-efficiency power management in compact DC-DC converters and load-switching circuits.
For engineers reviewing the DMT3009LEV-13 datasheet, DMT3009LEV-13 pinout, DMT3009LEV-13 application, or DMT3009LEV-13 equivalent, key selection criteria include gate threshold voltage (1–3V), body diode forward voltage (0.8–1.2V), thermal resistance (RθJC = 19°C/W), switching speed (tF = 1.5ns), and dual-channel layout compatibility with space-constrained PCBs.
Technical Context
This dual MOSFET implements two independent N-channel silicon devices sharing a common source-connected substrate configuration, enabling synchronous rectification or complementary half-bridge operation without external isolation. Its low gate charge (Qg = 12nC @ 10V) and fast turn-off fall time (1.5ns) support high-frequency PWM control up to 1MHz.
The device uses trench-gate process technology to achieve simultaneous optimization of conduction loss (RDS(ON) = 9mΩ typ @ 10VGS) and switching loss (Ciss = 823pF, Crss = 52pF). Thermal performance is enhanced by direct die-to-package thermal path in the PowerDI3333-8 leadframe structure.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30V - Maximum blocking voltage before avalanche onset; supports 24V rail systems with margin. |
| RDS(ON) @ 10VGS | 12mΩ max - Enables ≤240mW conduction loss at 20A; critical for thermally constrained load switches. |
| ID (continuous) | 20A @ TC = +25°C - Package-limited current rating; requires heatsinking above 70°C case temperature. |
| Qg @ 10V | 12nC - Low gate drive energy reduces controller IC loading and enables efficient 500kHz–1MHz operation. |
| tF | 1.5ns - Fast fall time minimizes shoot-through risk in half-bridge configurations with tight dead-time control. |
| RθJC | 19°C/W - Enables direct thermal coupling to PCB copper pour or heatsink for sustained 15A operation at TJ ≤ 125°C. |
| VGS(TH) | 1–3V - Logic-level compatible with 3.3V/5V microcontrollers; ensures full enhancement at standard IO voltages. |
Pinout & Package
DMT3009LEV-13 is housed in the PowerDI®3333-8 (Type UXD) surface-mount package - a thermally enhanced, lead-free, halogen-free molded plastic case with 0.65mm pitch, 3.3mm × 3.3mm footprint, and exposed thermal pad on bottom side for PCB heat dissipation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D1, D2 | Drain terminals (Q1 & Q2) | High-current output nodes; electrically isolated but thermally coupled; require separate routing to avoid cross-talk. |
| S1, S2 | Source terminals (Q1 & Q2) | Return paths for respective channels; may be tied externally for common-source configuration or left independent. |
| G1, G2 | Gate terminals (Q1 & Q2) | Control inputs with 1.2Ω gate resistance; require individual gate resistors for matched switching timing. |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(ON) @ 4.5VGS | 20mΩ max - Ensures robust conduction under 5V logic drive without gate boosting circuitry. |
| Fast body diode recovery | tRR = 16.4ns - Reduces reverse recovery loss in synchronous buck topologies operating >200kHz. |
| Low input capacitance | Ciss = 823pF - Minimizes Miller effect and improves EMI profile during hard-switching transitions. |
| Green compound packaging | Halogen- and antimony-free (<900ppm Br/Cl, <1000ppm Sb) - Meets IPC-1752A Class 3 environmental compliance. |
Applications
| DC-DC Synchronous Buck Converter | USB-C Load Switch |
|---|---|
Use Scenario: High-efficiency 12V-to-5V/3.3V conversion in portable SSD enclosures and embedded controllers. IC Role / Device Role / Timing Role: Dual-channel high-side/low-side switch replacing discrete MOSFET pairs; enables 95%+ efficiency at 10A load. Use Value: 12mΩ RDS(ON) cuts conduction loss by 40% vs. legacy 20mΩ duals, reducing thermal pad area by 30%. | Use Scenario: Hot-plug protection and power sequencing for USB-C PD ports in docking stations and monitors. IC Role / Device Role / Timing Role: Dual independent load switch controlling VBUS and CC line power domains with independent enable control. Use Value: 1–3V VGS(TH) allows direct GPIO control from 3.3V microcontrollers; no level-shifter required. |
| Industrial I/O Module Protection | Automotive Body Control Module |
Use Scenario: Overcurrent and short-circuit protected 24V digital output drivers for PLC expansion modules. IC Role / Device Role / Timing Role: Dual-channel protected switch with integrated body diodes handling inductive kickback from solenoid loads. Use Value: 90A pulsed drain current rating withstands 10µs inductive transients; tRR = 16.4ns prevents latch-up during rapid turn-off. | Use Scenario: LED matrix backlight dimming and sensor power gating in automotive instrument clusters. IC Role / Device Role / Timing Role: Dual low-side driver for segmented LED strings and Hall-effect sensor bias rails. Use Value: -55°C to +150°C operating range meets AEC-Q101 stress requirements; RθJC = 19°C/W enables passive cooling in sealed housings. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN3029LSD-13 | Same PowerDI3333-8 package; higher RDS(ON) (15mΩ @ 10V); lower Qg (9.5nC) | Better suited for ultra-high-frequency (>2MHz) switching where gate drive loss dominates conduction loss | Select when prioritizing switching efficiency over thermal density in low-duty-cycle applications |
| SI7157DN-T1-GE3 | SO-8 package; higher RDS(ON) (16mΩ @ 10V); larger footprint; higher RθJA (62°C/W) | Preferred for legacy designs requiring SO-8 compatibility and manual rework capability | Choose only if board redesign for PowerDI3333-8 is not feasible; expect 22% higher junction temperature at 15A |
Compared with DMN3029LSD-13 and SI7157DN-T1-GE3, DMT3009LEV-13 delivers the lowest RDS(ON) in its class and best thermal resistance, making it optimal for space-constrained, high-current DC-DC stages where thermal headroom is limited.
Availability
DMT3009LEV-13 is available at Aetrix Electronics and suitable for USB-C load switching, industrial I/O protection, and automotive LED driver applications requiring stable component supply across multi-year production cycles.
Supply support for DMT3009LEV-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for industrial, computing, and automotive markets.
The DMT3009LEV belongs to Diodes' PowerMOS™ dual-channel portfolio, engineered specifically for high-density, high-efficiency power conversion where thermal performance and gate-drive simplicity are critical design constraints.
FAQ
What is the maximum safe operating junction temperature for DMT3009LEV-13?
The absolute maximum junction temperature is +150°C per the datasheet. Continuous operation above +125°C requires derating based on RθJC = 19°C/W and actual PCB copper area. Thermal shutdown is not built-in; external monitoring is required for safety-critical use.
Can DMT3009LEV-13 be used in a synchronous rectifier configuration?
Yes - its low RDS(ON) (12mΩ @ 10VGS), fast body diode (tRR = 16.4ns), and matched dual-channel structure make it suitable for synchronous rectification in buck converters up to 1MHz. Gate drive must be precisely timed to avoid shoot-through.
Is the PowerDI3333-8 package compatible with standard reflow profiles?
Yes - the package is qualified for JEDEC J-STD-020 Level 1 moisture sensitivity and supports standard lead-free reflow profiles (peak 260°C, 60s above 217°C). The matte tin finish ensures reliable solder wetting on OSP- or ENIG-finished PCBs.
Does DMT3009LEV-13 include integrated ESD protection?
No - the device has no built-in ESD protection circuitry beyond inherent MOSFET gate oxide robustness (HBM rating not specified in DS40670). External TVS diodes or RC snubbers are recommended for gate lines in noisy environments such as automotive or industrial I/O.
DMT3009LEV-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- -
- Configuration:
- -
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- -
- Current - Continuous Drain (Id) @ 25°C:
- -
- Rds On (Max) @ Id, Vgs:
- -
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- Power - Max:
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
DMT3009LEV-13 FAQ
1.How can I place an order for DMT3009LEV-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMT3009LEV-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMT3009LEV-13 reliable?
The price and inventory of DMT3009LEV-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT3009LEV-13 is usually 5 days.
3.What payment methods are accepted for DMT3009LEV-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT3009LEV-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMT3009LEV-13?
DMT3009LEV-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMT3009LEV-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMT3009LEV-13?
For technical support, including DMT3009LEV-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT3009LEV-13 requirements.
6.How does Aetrix verify that DMT3009LEV-13 is sourced from the original manufacturer or authorized distributors?
All DMT3009LEV-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT3009LEV-13 meets industry standards.
7.What is the process for return or replacement of DMT3009LEV-13?
All DMT3009LEV-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMT3009LEV-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMT3009LEV-13 part is unused and in its original packaging.
Return procedure for DMT3009LEV-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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