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Diodes Incorporated DMT3009LEV-7
- Part No.:
- DMT3009LEV-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- -
- Datasheet:
-
DMT3009LEV-7.pdf
- Description:
- MOSFET 25V-30V POWERDI3333-8
- Quantity:
- Payment:
- Shipping:
Inventory:9,658
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Product details
Overview
DMT3009LEV-7 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in PowerDI®3333-8 package, rated for 30V VDSS, 12mΩ RDS(ON) @ 10VGS, and 20A continuous drain current at TC = +25°C. It serves as a high-efficiency synchronous rectifier or load switch in DC-DC converters and battery-powered power management circuits.
For engineers reviewing the DMT3009LEV-7 datasheet, DMT3009LEV-7 pinout, DMT3009LEV-7 application, or DMT3009LEV-7 equivalent, key selection criteria include low gate threshold (1–3V), fast switching (tR = 5.2ns), body diode recovery (tRR = 16.4ns), and thermal resistance (RθJC = 19°C/W) for compact thermal design.
Technical Context
This dual MOSFET integrates two matched N-channel devices sharing a common source configuration in a thermally optimized PowerDI3333-8 package. Its low RDS(ON) at 3.8VGS (25mΩ) enables operation with 3.3V logic-level gate drive, while low Ciss (823pF) and Qg (12nC @ 10V) support high-frequency switching up to 1MHz in buck converters.
The device features integrated body diodes with VSD = 0.8–1.2V at 10A and tRR = 16.4ns, enabling efficient synchronous rectification without external Schottky diodes. Its 19°C/W junction-to-case thermal resistance allows direct PCB copper heatsinking for sustained 15A operation at TC ≤ +70°C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30V - Maximum blocking voltage for 12V/24V rail protection and point-of-load regulation |
| RDS(ON) @ 10VGS | 12mΩ - Enables <150mW conduction loss at 10A, critical for >95% efficiency in 5–20A DC-DC stages |
| ID Continuous @ TC=25°C | 20A - Package-limited current rating supporting high-current load switches and OR-ing circuits |
| Qg @ 10V | 12nC - Low gate charge reduces driver power and enables clean 10ns-scale switching edges |
| tR/tF | 5.2ns / 1.5ns - Fast edge rates minimize switching transition losses in high-frequency SMPS |
| RθJC | 19°C/W - Allows direct thermal coupling to 1-inch² copper pad for stable operation at 15A continuous |
| VGS(TH) | 1–3V - Compatible with 3.3V microcontroller GPIOs without level-shifting circuitry |
Pinout & Package
Package: PowerDI®3333-8 (Type UXD), surface-mount, thermally enhanced plastic case with exposed drain paddle. Dimensions: 3.30 × 3.30 × 0.80 mm (L × W × H), moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D1, D2 | Drain terminals (Q1 & Q2) | Internally connected to exposed thermal paddle; must be soldered to large copper area for heat dissipation |
| S1, S2 | Source terminals (Q1 & Q2) | Common-source configuration supports half-bridge or dual-switch topologies; electrically isolated pins |
| G1, G2 | Gate terminals (Q1 & Q2) | Independent control inputs; low input capacitance (Ciss = 823pF) minimizes gate driver loading |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(ON) at 3.8VGS | 25mΩ - Enables full-rated current switching from 3.3V logic controllers in portable systems |
| Fast body diode recovery | tRR = 16.4ns - Reduces reverse recovery loss and EMI in synchronous rectifiers |
| Low gate charge asymmetry | Qgd/Qgs = 2.4nC/1.7nC - Improves Miller immunity and prevents shoot-through in bridge configurations |
| Green compound packaging | Halogen- and antimony-free (<900ppm Br+Cl, <1000ppm Sb) - Meets IPC-1752A Class 3 environmental compliance |
| Thermal performance | RθJC = 19°C/W - Delivers 2× power density vs. SO-8 equivalents under identical PCB layout |
Applications
| Battery Protection Circuit | USB-C Power Delivery Switch |
|---|---|
|
Use Scenario: Dual-MOSFET OR-ing and overcurrent protection in dual-battery backup systems for industrial IoT gateways. IC Role / Device Role: Back-to-back configured N-channel pair providing bidirectional current blocking and fast fault isolation. Use Value: 12mΩ on-resistance ensures <240mW loss per channel at 14.4A, extending runtime by 8% vs. discrete P-channel solutions. |
Use Scenario: 20V/5A power path switching in USB-C PD 3.0 sink applications requiring dynamic VBUS routing. IC Role / Device Role: High-side load switch controlling VBUS connection between Type-C port and system PMIC. Use Value: 3.8VGS turn-on enables direct control from PD controller's 3.3V GPIO, eliminating level-shifters and reducing BOM count. |
| DC-DC Synchronous Rectifier | Motor Driver Half-Bridge |
|
Use Scenario: Secondary-side synchronous rectification in 12V→3.3V/15A isolated flyback converter for telecom power supplies. IC Role / Device Role: Dual N-channel replacing Schottky diodes to reduce conduction loss and improve light-load efficiency. Use Value: 0.8V forward drop of integrated body diode (vs. 0.45V Schottky) is offset by 60% lower RDS(ON), yielding 1.2% absolute efficiency gain at full load. |
Use Scenario: Low-voltage (≤24V) brushed DC motor driver in medical pumps requiring compact, thermally robust H-bridge. IC Role / Device Role: Two independent N-channel switches forming one half-bridge leg with shared source node. Use Value: 19°C/W RθJC permits 10A continuous motor current with only 2oz copper heatsinking, reducing board area by 35% vs. SO-8 packages. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN3029LSD-13 | Single N-channel, 30V/20A, same RDS(ON) but no dual topology | Requires two devices for dual-switch function; increases layout area and gate drive complexity | Use only when discrete placement or asymmetric channel requirements exist |
| SI6926ADQ-T1-GE3 | 30V dual N-channel, but RDS(ON) = 18mΩ @ 10VGS; higher Qg (20nC) | Higher conduction and switching loss; unsuitable for >500kHz designs or 15A+ continuous loads | Select only if legacy footprint compatibility with SO-8 is mandatory |
Compared with DMT3009LEV-7, DMN3029LSD-13 lacks integration and increases gate drive overhead, while SI6926ADQ-T1-GE3 sacrifices 50% higher RDS(ON) and 67% higher Qg, compromising efficiency and thermal margin in space-constrained power stages.
Availability
DMT3009LEV-7 is available at Aetrix Electronics and suitable for battery protection circuits, USB-C power delivery switches, DC-DC synchronous rectifiers, and motor driver half-bridges requiring stable component supply across production lifecycles.
Supply support for DMT3009LEV-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global semiconductor company specializing in discrete, analog, and mixed-signal ICs for power management, signal integrity, and connectivity applications.
The DMT3009LEV-7 belongs to Diodes' PowerMOS™ family, engineered specifically for high-density, high-efficiency power conversion in portable, industrial, and automotive subsystems where thermal performance and logic-level drive are critical.
FAQ
What is the maximum safe operating temperature for DMT3009LEV-7?
The junction temperature must not exceed +150°C under any condition. With RθJC = 19°C/W and typical PCB copper heatsinking, the device sustains 15A continuous current at TC ≤ +70°C. Derating is required above that case temperature per Figure 5 and Figure 7 in DS40670 Rev. 2-2.
Can DMT3009LEV-7 be used in back-to-back configuration for AC switching?
No - it is a dual N-channel MOSFET with no intrinsic body diode symmetry for bidirectional blocking. For AC solid-state relays, use complementary N+P pairs or dedicated AC switches. Its body diodes conduct only from source to drain, limiting use to DC polarity-specific topologies.
Is the PowerDI3333-8 package lead-free and RoHS-compliant?
Yes - DMT3009LEV-7 is fully RoHS 3 compliant (2015/863/EU), lead-free, halogen-free (<900ppm Br+Cl), and antimony-free (<1000ppm). Terminal finish is matte tin annealed over copper leadframe, qualified to MIL-STD-202 Method 208 for solderability.
What is the recommended gate resistor value for 1MHz switching?
A 1Ω gate resistor is specified in the datasheet for tR/tF characterization at 10V drive. For 1MHz operation, use 2.2Ω to balance EMI suppression and switching loss - this yields ~7ns rise time while limiting peak gate current to <5A, avoiding driver saturation.
DMT3009LEV-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- -
- Configuration:
- -
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- -
- Current - Continuous Drain (Id) @ 25°C:
- -
- Rds On (Max) @ Id, Vgs:
- -
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- Power - Max:
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
DMT3009LEV-7 FAQ
1.How can I place an order for DMT3009LEV-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMT3009LEV-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMT3009LEV-7 reliable?
The price and inventory of DMT3009LEV-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT3009LEV-7 is usually 5 days.
3.What payment methods are accepted for DMT3009LEV-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT3009LEV-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMT3009LEV-7?
DMT3009LEV-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMT3009LEV-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMT3009LEV-7?
For technical support, including DMT3009LEV-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT3009LEV-7 requirements.
6.How does Aetrix verify that DMT3009LEV-7 is sourced from the original manufacturer or authorized distributors?
All DMT3009LEV-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT3009LEV-7 meets industry standards.
7.What is the process for return or replacement of DMT3009LEV-7?
All DMT3009LEV-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMT3009LEV-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMT3009LEV-7 part is unused and in its original packaging.
Return procedure for DMT3009LEV-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DMT3009LEV-7 Tags
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