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Diodes Incorporated DMT3009LFVW-13
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- Part No.:
- DMT3009LFVW-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerVDFN
- Datasheet:
-
DMT3009LFVW-13.pdf
- Description:
- MOSFET N-CH 30V 12A PWRDI3333
- Quantity:
- Payment:
- Shipping:
Inventory:2,869
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Product details
Overview
DMT3009LFVW-13 from Diodes Incorporated is a 30V N-channel enhancement-mode MOSFET in PowerDI3333-8 package, delivering 11 mΩ RDS(ON) at VGS = 10 V and 50 A continuous drain current at TC = +25°C. It serves as a high-efficiency synchronous rectifier or power switch in DC-DC converters, backlighting drivers, and battery-powered power management circuits.
For engineers reviewing the DMT3009LFVW-13 datasheet, DMT3009LFVW-13 pinout, DMT3009LFVW-13 application, or DMT3009LFVW-13 equivalent, key selection criteria include its low 11 mΩ on-resistance at 10 V gate drive, wettable flank terminals for automated optical inspection, thermally efficient PowerDI3333-8 package with 3.5 °C/W RθJC, and AEC-Q101-compliant automotive variant (DMT3009LFVWQ).
Technical Context
This MOSFET employs trench-gate silicon process technology to achieve low RDS(ON) while maintaining fast switching performance: tD(ON) = 3.2 ns, tF = 1.5 ns, and Qg = 12 nC at VGS = 10 V. Its body diode exhibits tRR = 16.4 ns and QRR = 5.9 nC under 10 A/100 A/μs conditions.
The device operates across –55°C to +150°C junction temperature range and supports ±20 V gate-source voltage. Its SOA curve is characterized up to 10 s pulse width with RDS(ON)-limited boundary at TC = +25°C, enabling robust operation in transient-loaded power stages.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30 V - Maximum drain-source blocking voltage before avalanche onset; defines safe operating ceiling in buck/boost topologies. |
| RDS(ON) | 11 mΩ @ VGS = 10 V - Enables <1.5 W conduction loss at 37 A, critical for high-current point-of-load regulation. |
| ID (continuous) | 50 A @ TC = +25°C - Sustains high output current in compact thermal layouts using PCB copper heatsinking. |
| Qg | 12 nC @ VGS = 10 V - Determines gate driver power requirement and switching transition time in PWM control loops. |
| RθJC | 3.5 °C/W - Junction-to-case thermal resistance measured to exposed drain pad; enables direct thermal coupling to heatsink or copper plane. |
| tRR | 16.4 ns - Body diode reverse recovery time; minimizes shoot-through risk and EMI in synchronous rectification. |
| VGS(TH) | 1–3 V - Gate threshold voltage range ensures reliable turn-on with 3.3 V or 5 V logic-level gate drivers. |
Pinout & Package
Package: PowerDI3333-8 (SWP), surface-mount, thermally enhanced with exposed drain pad and wettable flank terminals. Dimensions: 3.30 mm × 3.30 mm × 0.80 mm (L × W × H); weight ≈ 0.03 g.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D (Drain, Pins 1–4) | Main current path collector terminal | Internally paralleled pins form low-inductance, high-current drain connection to exposed copper pad; optimized for thermal dissipation. |
| G (Gate, Pin 5) | Control electrode | Single-point gate input with 1.2 Ω intrinsic gate resistance; compatible with standard MOSFET drivers without external gate resistor. |
| S (Source, Pins 6–8) | Current return path and reference node | Three-source pins reduce source inductance and improve current sharing; essential for stable high-frequency switching stability. |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(ON) at 4.5 V | 13 mΩ - Enables full-load operation with 5 V gate drive, supporting USB PD and industrial 5 V control rails. |
| Wettable flank terminals | Matte tin annealed over copper leadframe - Supports automated optical inspection (AOI) of solder joint integrity on bottom-side terminations. |
| Thermal efficiency | RθJC = 3.5 °C/W - Allows >35 W power dissipation at TC = +25°C, reducing need for external heatsinks in space-constrained designs. |
| Board area reduction | 33% of SO-8 footprint - Saves PCB real estate in multi-phase VRMs and portable lighting modules where layout density is critical. |
| Environmental compliance | Halogen- and antimony-free, RoHS 3 compliant (<900 ppm Br/Cl, <1000 ppm Sb) - Meets IEC 61249-2-21 and automotive supply chain requirements. |
Applications
| LED Backlight Driver | USB-C Power Delivery Module |
|---|---|
|
Use Scenario: Driving parallel LED strings in LCD panel backlight systems with PWM dimming at 1–20 kHz. IC Role / Device Role / Timing Role: High-side synchronous rectifier switch in boost converter output stage, replacing Schottky diode. Use Value: Reduces forward conduction loss by >60% versus 40 V/5 A Schottky, improving system efficiency from 88% to 92% at 2 A load. |
Use Scenario: Output power switch in 20 V/5 A USB-C PD sink circuit with programmable voltage negotiation. IC Role / Device Role / Timing Role: Low-side main pass transistor in adjustable buck regulator controlling VBUS delivery. Use Value: 11 mΩ RDS(ON) limits I²R loss to 275 mW at 5 A, enabling thermal design without forced air cooling in 10 mm × 10 mm module footprint. |
| Automotive Infotainment PMIC | Industrial 24 V DC-DC Converter |
|
Use Scenario: Core power switch in dual-phase 5 V/12 A rail supplying SoC and display interface in head unit. IC Role / Device Role / Timing Role: Phase-leg high-side FET in interleaved synchronous buck topology operating at 500 kHz. Use Value: Fast 1.5 ns fall time and 5.9 nC QRR minimize dead-time losses and EMI generation during phase transitions. |
Use Scenario: Primary-side switch in isolated flyback converter powering 12 V/3 A auxiliary rail in PLC controller. IC Role / Device Role / Timing Role: Main switching element rated for 30 V breakdown, handling 45 A peak currents during transient surges. Use Value: 19 mJ EAS rating supports unclamped inductive switching events up to 19 A, eliminating need for external snubber networks. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMT3009LFVWQ | AEC-Q101 qualified; identical RDS(ON), VDSS, and package; tighter parametric screening and PPAP support. | Required for automotive infotainment, ADAS camera modules, and engine control subsystems. | Select when automotive qualification, change control, or IATF 16949 traceability is mandated. |
| DMN3016LFG-7 | Higher RDS(ON) (16 mΩ @ 10 V); same PowerDI3333-8 package; lower Qg (8.5 nC) but reduced ID (36 A). | Better suited for lower-current, higher-switching-frequency applications like PoE injectors or fan controllers. | Choose if gate drive strength is limited or switching frequency exceeds 1 MHz, accepting 45% higher conduction loss. |
Compared with DMT3009LFVW-13, DMT3009LFVWQ adds automotive qualification without sacrificing electrical performance, while DMN3016LFG-7 trades conduction efficiency for faster switching and lower gate charge-making it viable only where thermal margin permits higher RDS(ON).
Availability
DMT3009LFVW-13 is available at Aetrix Electronics and suitable for LED backlight drivers, USB-C power delivery modules, and industrial 24 V DC-DC converters requiring stable component supply, consistent parametric performance, and long-term production continuity.
Supply support for DMT3009LFVW-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and the Americas.
This device belongs to Diodes' PowerMOS™ portfolio, engineered specifically for high-efficiency, high-density power conversion in consumer, industrial, and automotive applications where thermal performance and board space are constrained.
FAQ
What is the maximum allowable gate-source voltage for DMT3009LFVW-13?
The absolute maximum gate-source voltage is ±20 V per the datasheet's Maximum Ratings table. Exceeding this risks permanent gate oxide damage. For reliable operation, gate drive should be clamped to ≤16 V with appropriate series resistance and TVS protection, especially in noisy industrial environments.
Does DMT3009LFVW-13 support logic-level gate drive?
Yes - its VGS(TH) range of 1–3 V and RDS(ON) = 13 mΩ at VGS = 4.5 V confirm full enhancement with standard 3.3 V or 5 V microcontroller GPIO or dedicated gate drivers. No level-shifting circuitry is required.
How does the PowerDI3333-8 package improve thermal performance over SO-8?
The PowerDI3333-8 exposes the drain pad directly to the PCB, achieving RθJC = 3.5 °C/W versus ~60 °C/W for SO-8. This allows >10× higher power dissipation at the same case temperature and eliminates reliance on through-hole thermal vias for heat extraction.
Is DMT3009LFVW-13 suitable for synchronous rectification in flyback converters?
Yes - its low QRR (5.9 nC), fast tRR (16.4 ns), and low RDS(ON) make it effective as a secondary-side synchronous rectifier. The body diode's VSD = 0.8–1.2 V at 10 A ensures low forward drop during dead-time conduction, reducing cross-conduction losses.
DMT3009LFVW-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerVDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 12A (Ta), 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 3.8V, 10V
- Rds On (Max) @ Id, Vgs:
- 11mOhm @ 14.4A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 12 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 823 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.3W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount, Wettable Flank
- Supplier Device Package:
- PowerDI3333-8 (SWP) Type UX
DMT3009LFVW-13 FAQ
1.How can I place an order for DMT3009LFVW-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMT3009LFVW-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMT3009LFVW-13 reliable?
The price and inventory of DMT3009LFVW-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT3009LFVW-13 is usually 5 days.
3.What payment methods are accepted for DMT3009LFVW-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT3009LFVW-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMT3009LFVW-13?
DMT3009LFVW-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMT3009LFVW-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMT3009LFVW-13?
For technical support, including DMT3009LFVW-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT3009LFVW-13 requirements.
6.How does Aetrix verify that DMT3009LFVW-13 is sourced from the original manufacturer or authorized distributors?
All DMT3009LFVW-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT3009LFVW-13 meets industry standards.
7.What is the process for return or replacement of DMT3009LFVW-13?
All DMT3009LFVW-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMT3009LFVW-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMT3009LFVW-13 part is unused and in its original packaging.
Return procedure for DMT3009LFVW-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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