Diodes Incorporated DMT3009LFVW-7

Overview

DMT3009LFVW-7 from Diodes Incorporated is a 30V N-channel enhancement-mode MOSFET in PowerDI3333-8 package, optimized for high-efficiency power management with R_DS(ON) = 6.6 mΩ (typ) at V_GS = 10 V, 14.4 A, and rated for 50 A continuous drain current at T_C = +25°C. It serves as a primary switching element in DC-DC converters and backlighting circuits where low conduction loss and thermal efficiency are critical.

For engineers reviewing the DMT3009LFVW-7 datasheet, DMT3009LFVW-7 pinout, DMT3009LFVW-7 application, or DMT3009LFVW-7 equivalent, key selection criteria include its 3.5°C/W junction-to-case thermal resistance, wettable flank terminals for automated optical inspection, and guaranteed R_DS(ON) performance down to V_GS = 3.8 V for 5 A operation - essential for 4.5 V–5 V logic-driven power stages.

Technical Context

This MOSFET employs a trench-gate silicon process to achieve ultra-low on-resistance while maintaining fast switching characteristics: t_D(ON) = 3.2 ns, t_R = 5.2 ns, and Q_g = 12 nC at V_GS = 10 V. Its body diode exhibits t_RR = 16.4 ns and Q_RR = 5.9 nC under 10 A/100 A/μs conditions, supporting synchronous rectification and flyback topologies.

The device operates across –55°C to +150°C junction temperature range and features ±20 V gate-source voltage rating, enabling robust drive margin against transients. Its PowerDI3333-8 package integrates an exposed drain pad for direct thermal coupling to PCB copper, delivering 35.7 W total power dissipation at T_C = +25°C.

Key Specifications

Pinout & Package

PowerDI3333-8 is a surface-mount, thermally enhanced 8-pin package with three parallel drain terminals, three source terminals, and two gate terminals - optimized for low-inductance, high-current routing and PCB-level thermal spreading.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with DMT3009LFVW-7, the DMT3009LFVWQ-7 adds automotive qualification without electrical trade-offs, while the DMN3020LFG-7 sacrifices 30 A current headroom and 1.7 mΩ R_DS(ON) to reduce unit cost - making the original optimal for high-density, high-efficiency 20–50 A power stages.

Availability

DMT3009LFVW-7 is available at Aetrix Electronics and suitable for LED backlighting, point-of-load converters, and USB-C power path management requiring stable component supply, consistent parametric performance, and long-term production continuity.

Supply support for DMT3009LFVW-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and distribution operations across Asia, Europe, and North America.

The DMT3009LFVW belongs to Diodes' PowerMOS™ portfolio, engineered specifically for high-current, high-efficiency DC-DC conversion and load switching in space-constrained industrial, computing, and automotive subsystems.

FAQ

What is the maximum continuous drain current for DMT3009LFVW-7 at 70°C case temperature?

The maximum continuous drain current is 37 A at T_C = +70°C, per the Absolute Maximum Ratings table. This derating reflects thermal limitations of the PowerDI3333-8 package under real-world PCB thermal conditions, not silicon capability alone. The device maintains R_DS(ON) stability across this range, with normalized on-resistance variation ≤1.2× at 150°C junction temperature.

Does DMT3009LFVW-7 support gate drive from 3.3 V logic?

No - the gate threshold voltage V_GS(TH) ranges from 1.0 V to 3.0 V, but R_DS(ON) is not specified below V_GS = 3.8 V. At 3.3 V, the device operates in weak inversion with uncontrolled R_DS(ON) (>50 mΩ) and high dynamic losses. Reliable switching requires ≥4.5 V gate drive, with full performance achieved at 10 V.

How does the PowerDI3333-8 package improve thermal performance over SO-8?

PowerDI3333-8 delivers 3.5°C/W junction-to-case thermal resistance versus ~60°C/W for standard SO-8, due to its exposed drain pad directly soldered to large PCB copper areas. This reduces junction temperature rise by >80% at 14.4 A, enabling higher power density without heatsinks or forced air - confirmed by JEDEC JESD51-2 transient thermal measurements in the datasheet.

Is DMT3009LFVW-7 suitable for avalanche energy handling in inductive switching?

Yes - it is rated for 19 mJ single-pulse avalanche energy (E_AS) with I_AS = 19 A at L = 0.1 mH. This supports reliable operation in flyback, boost, and motor drive circuits where inductive kickback occurs. However, repetitive avalanche is not characterized; design must limit stress to single-event conditions per datasheet Figure 12 SOA curves.