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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMT3009LFVWQ-13

Name: DMT3009LFVWQ-13
Brand: Diodes Incorporated
SKU: DMT3009LFVWQ-13
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMT3009LFVWQ-13

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: 8-PowerVDFN

Datasheet:: DMT3009LFVWQ-13.pdf

Description:: MOSFET N-CH 30V 12A PWRDI3333

Quantity:: RFQ Add To RFQ list

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Product details

Overview

DMT3009LFVWQ-13 from Diodes Incorporated is a 30V N-channel enhancement-mode MOSFET in PowerDI3333-8 (SWP) package, rated for 50A continuous drain current at T_C = +25°C, with R_DS(ON) of 6.6 mΩ (typ) at V_GS = 10V and 10.5 mΩ (typ) at V_GS = 4.5V. It is AEC-Q101 qualified and optimized for high-efficiency DC-DC converters in automotive power management systems.

For engineers reviewing the DMT3009LFVWQ-13 datasheet, DMT3009LFVWQ-13 pinout, DMT3009LFVWQ-13 application, or DMT3009LFVWQ-13 equivalent, key selection criteria include low R_DS(ON) at 4.5V gate drive, wettable flank package for automated optical inspection, and validated unclamped inductive switching performance under AEC-Q101 stress conditions.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve ultra-low on-resistance while maintaining fast switching characteristics: t_D(ON) = 3.2 ns, t_R = 5.2 ns, Q_g = 12 nC at V_GS = 10V. Its body diode exhibits t_RR = 16.4 ns and Q_RR = 5.9 nC under 10 A/100 A/μs conditions, supporting synchronous rectification.

The device operates across –55°C to +150°C junction temperature range, with R_θJC = 3.5°C/W and R_θJA = 55°C/W (FR-4, 2 oz Cu). Its PowerDI3333-8 (SWP) package features an exposed drain pad for thermal conduction and wettable flanks for solder joint inspection.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	30 V - Maximum blocking voltage before avalanche onset; supports 24V automotive rail designs with margin.
R_DS(ON) @ V_GS = 10V	6.6 mΩ (typ) - Enables <1.0 W conduction loss at 14.4 A, critical for high-current DC-DC output stages.
R_DS(ON) @ V_GS = 4.5V	10.5 mΩ (typ) - Ensures robust operation with 5V logic-level gate drivers in space-constrained modules.
I_D Continuous @ T_C = 25°C	50 A - Sustains high load currents without derating when mounted on thermally enhanced PCBs.
E_AS	19 mJ - Rated single-pulse avalanche energy; validates reliability under inductive turn-off transients.
Q_g @ V_GS = 10V	12 nC - Low gate charge reduces driver power loss and enables >1 MHz switching in POL converters.
t_RR	16.4 ns - Fast body diode recovery minimizes shoot-through risk and improves efficiency in synchronous buck topologies.

Pinout & Package

Package: PowerDI3333-8 (SWP), Type UX - surface-mount, thermally enhanced plastic package with exposed drain pad and wettable flank terminals. Dimensions: 3.30 mm × 3.30 mm × 0.80 mm (L × W × H); weight ≈ 0.03 g.

Pin/Terminal	Circuit Role	Design Meaning
D (Drain)	Main current path collector terminal	Connected to exposed copper pad; primary thermal path to PCB; must be soldered to large copper pour for R_θJC = 3.5°C/W performance.
S (Source)	Current return path and reference node	Three parallel source pins reduce parasitic inductance and improve current sharing in high-di/dt applications.
G (Gate)	Control electrode for channel modulation	Single gate pin with low R_g = 1.2 Ω; requires careful layout to minimize ringing during fast switching.

Key Features

Feature	Design Value
Low R_DS(ON) at 4.5V	10.5 mΩ typ - Enables direct drive from 5V microcontrollers or PMICs without level-shifting circuitry.
100% UIS tested	19 mJ E_AS - Confirmed robustness against inductive switching failures in motor control and converter flyback events.
Wettable flank terminals	Matte tin annealed over copper leadframe - Supports automated optical inspection (AOI) of solder fillets for automotive-grade process control.
AEC-Q101 qualification	Qualified per stress test standard for discrete semiconductors - Required for under-hood automotive power modules and ADAS ECUs.
Green packaging	Halogen- and antimony-free (<900 ppm Br/Cl, <1000 ppm Sb); RoHS 3 compliant - Meets EU environmental compliance mandates.

Applications

Automotive DC-DC Converters

LED Backlight Drivers

Use Scenario: Step-down conversion from 12V/24V battery rails to 3.3V/5V for infotainment and instrument cluster supplies.

IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 300–600 kHz with tight duty-cycle control.

Use Value: 6.6 mΩ R_DS(ON) limits conduction loss to <1.0 W at 14.4 A, enabling compact heatsinkless design in constrained ECU enclosures.

Use Scenario: Constant-current LED string control in automotive center console and ambient lighting modules.

IC Role / Device Role / Timing Role: PWM-controlled high-side switch modulating current through 4–6 series LEDs at 1–2 kHz.

Use Value: Fast 5.2 ns rise time and 16.4 ns body diode recovery prevent current overshoot and ensure precise dimming linearity.

Industrial Power Supplies

USB-C PD Power Path

Use Scenario: Secondary-side synchronous rectification in isolated 48V-to-12V telecom power supplies.

IC Role / Device Role / Timing Role: Low-voltage-drop replacement for Schottky diodes in LLC resonant converter outputs.

Use Value: 10.5 mΩ R_DS(ON) at 4.5V gate drive allows use with standard 5V gate drivers, reducing BOM count vs. dedicated gate drivers.

Use Scenario: Input power path switch in USB-C PD sink applications requiring reverse-current blocking and hot-swap protection.

IC Role / Device Role / Timing Role: Load switch controlling 20V/3A input with integrated overtemperature and short-circuit protection.

Use Value: AEC-Q101 qualification and 30V V_DSS support full USB-C PD 3.0 voltage range (up to 21V) with safety margin.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMTH3009LPSQ-13	Same die, PowerDI5060 package (5.0 × 6.0 mm); R_DS(ON) identical but higher R_θJA (70°C/W).	Lower power density; suited for lower-current, less thermally constrained boards.	Select when board layout permits larger footprint and thermal relief is less critical than cost.
IPD30N03S4L-25	30V, 30A, 2.5 mΩ @ 10V; TO-252 package; no AEC-Q101 qualification.	Lacks automotive qualification and wettable flanks; unsuitable for AOI-based production lines.	Choose only for non-automotive industrial applications where qualification and inspection are not required.

Compared with DMTH3009LPSQ-13, DMT3009LFVWQ-13 delivers 3× higher power density and superior thermal performance via its 3.3 mm × 3.3 mm footprint and 3.5°C/W R_θJC; versus IPD30N03S4L-25, it trades slightly higher R_DS(ON) for AEC-Q101 compliance and manufacturability in automotive SMT lines.

Availability

DMT3009LFVWQ-13 is available at Aetrix Electronics and suitable for automotive DC-DC converters, LED backlight drivers, and industrial power supplies requiring stable component supply, AEC-Q101 qualification, and high-reliability wettable-flank packaging.

Supply support for DMT3009LFVWQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and distribution operations across Asia, Europe, and North America.

This MOSFET belongs to Diodes' Automotive-Qualified PowerMOS™ family, engineered specifically for high-efficiency, high-reliability power conversion in harsh-environment automotive and industrial systems.

FAQ

What is the maximum continuous drain current for DMT3009LFVWQ-13 at 70°C case temperature?

The maximum continuous drain current is 37 A at T_C = +70°C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the PowerDI3333-8 package under sustained high-temperature operation, and assumes proper PCB copper area and airflow per the datasheet's thermal test conditions.

Does DMT3009LFVWQ-13 support gate drive from a 3.3V controller?

No - the gate threshold voltage V_GS(TH) ranges from 1 V to 3 V, but R_DS(ON) is not characterized below V_GS = 3.8 V. At 3.3V, the device operates in weak inversion with high on-resistance (>20 mΩ), causing excessive conduction loss. Minimum recommended gate drive is 4.5V for reliable switching.

Is the body diode of DMT3009LFVWQ-13 suitable for synchronous rectification?

Yes - the body diode has t_RR = 16.4 ns and Q_RR = 5.9 nC at I_F = 10 A, enabling efficient synchronous operation in buck converters up to 1 MHz. Its low V_SD = 0.8 V (typ) at 10 A further reduces forward conduction loss compared to external Schottky diodes.

What does "SWP" mean in the PowerDI3333-8 (SWP) package designation?

"SWP" stands for "Small Wettable Pad" - indicating the package's side-wettable flank geometry that exposes solderable metal along the vertical sidewalls of each terminal. This feature enables automated optical inspection (AOI) of solder joint quality, a requirement for automotive electronics manufacturing per IPC-A-610 Class 3 standards.

DMT3009LFVWQ-13 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: 8-PowerVDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 12A (Ta), 50A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 3.8V, 10V

Rds On (Max) @ Id, Vgs:: 11mOhm @ 14.4A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 12 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 823 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.3W (Ta), 35.7W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount, Wettable Flank

Supplier Device Package:: PowerDI3333-8 (SWP) Type UX

DMT3009LFVWQ-13 FAQ

1.How can I place an order for DMT3009LFVWQ-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMT3009LFVWQ-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMT3009LFVWQ-13 reliable?

The price and inventory of DMT3009LFVWQ-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT3009LFVWQ-13 is usually 5 days.

3.What payment methods are accepted for DMT3009LFVWQ-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT3009LFVWQ-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMT3009LFVWQ-13?

DMT3009LFVWQ-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMT3009LFVWQ-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMT3009LFVWQ-13?

For technical support, including DMT3009LFVWQ-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT3009LFVWQ-13 requirements.

6.How does Aetrix verify that DMT3009LFVWQ-13 is sourced from the original manufacturer or authorized distributors?

All DMT3009LFVWQ-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT3009LFVWQ-13 meets industry standards.

7.What is the process for return or replacement of DMT3009LFVWQ-13?

All DMT3009LFVWQ-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMT3009LFVWQ-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMT3009LFVWQ-13 part is unused and in its original packaging.

Return procedure for DMT3009LFVWQ-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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