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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMT3009LFVWQ-7

Name: DMT3009LFVWQ-7
Brand: Diodes Incorporated
SKU: DMT3009LFVWQ-7
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMT3009LFVWQ-7

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: 8-PowerVDFN

Datasheet:: DMT3009LFVWQ-7.pdf

Description:: MOSFET N-CH 30V 12A PWRDI3333

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Product details

Overview

DMT3009LFVWQ-7 from Diodes Incorporated is a 30V N-channel enhancement-mode MOSFET in PowerDI3333-8 (SWP) package, optimized for high-efficiency power management with R_DS(ON) = 11 mΩ @ V_GS = 10 V, 50 A continuous drain current at T_C = +25°C, and AEC-Q101 qualification for automotive reliability - used in DC-DC converters and LED backlighting circuits.

For engineers reviewing the DMT3009LFVWQ-7 datasheet, DMT3009LFVWQ-7 pinout, DMT3009LFVWQ-7 application, or DMT3009LFVWQ-7 equivalent, key selection criteria include low on-resistance at 4.5 V gate drive, wettable flank package for automated optical inspection, and thermal performance validated under pulsed and steady-state conditions per JEDEC standards.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve ultra-low R_DS(ON) while maintaining fast switching characteristics: t_D(ON) = 3.2 ns, Q_g = 12 nC @ V_GS = 10 V, and C_iss = 823 pF at V_DS = 15 V. Its body diode exhibits t_RR = 16.4 ns and Q_RR = 5.9 nC under 10 A/100 A/μs conditions.

Thermally, it delivers R_θJC = 3.5 °C/W junction-to-case and supports 35.7 W power dissipation at T_C = +25°C, enabled by an exposed drain pad in the PowerDI3333-8 (SWP) package. It is rated for operation from –55°C to +150°C and qualified to AEC-Q101 for automotive-grade robustness.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	30 V - Maximum blocking voltage before avalanche conduction; suitable for 24 V automotive and industrial bus rails.
R_DS(ON)	11 mΩ @ V_GS = 10 V - Enables <1.5 W conduction loss at 14.4 A, critical for high-current DC-DC phase legs.
I_D (continuous)	50 A @ T_C = +25°C - Sustains high load currents without derating when mounted on thermally enhanced PCBs.
Q_g	12 nC @ V_GS = 10 V - Low gate charge reduces driver power and enables efficient 500 kHz–1 MHz switching in synchronous buck stages.
t_RR	16.4 ns - Fast body diode recovery minimizes shoot-through risk and reduces snubber losses in hard-switched topologies.
R_θJC	3.5 °C/W - Allows direct thermal coupling to heatsinks or copper planes, supporting >35 W power handling in compact layouts.
AEC-Q101	Qualified - Validated for automotive applications including engine control modules and ADAS power supplies.

Pinout & Package

Package: PowerDI3333-8 (SWP), surface-mount, thermally enhanced with exposed drain pad and wettable flank terminals for AOI compatibility and improved solder joint reliability.

Pin/Terminal	Circuit Role	Design Meaning
D (Drain)	Main current path output / heat sink node	4× exposed drain pads (top view) provide low-inductance, high-current return and primary thermal path to PCB copper.
G (Gate)	Control input for channel modulation	Single gate terminal (Pin 1) enables standard gate driver interface; R_g = 1.2 Ω ensures predictable turn-on/turn-off timing.
S (Source)	Reference node for gate drive and current sensing	3× source terminals (Pins 2, 3, 4) reduce source inductance and improve current sharing in high-frequency switching.

Key Features

Feature	Design Value
Low R_DS(ON) at 4.5 V	13 mΩ - Enables full-load operation from 5 V logic-level controllers without level-shifting circuitry.
100% UIS tested	IAS = 19 A, EAS = 19 mJ - Confirmed ruggedness against inductive switching stress in motor drives and solenoid controls.
Wettable flank leads	Matte tin annealed over copper - Supports automated optical inspection of solder fillets for zero-defect automotive manufacturing.
Green packaging	Halogen- and antimony-free, RoHS 3 compliant - Meets EU environmental directives without compromising thermal or mechanical performance.
Small footprint	33% board area vs SO-8 - Enables higher power density in space-constrained modules such as LED drivers and portable power banks.

Applications

Automotive DC-DC Converters

LED Backlight Drivers

Use Scenario: 12 V to 5 V/3.3 V point-of-load conversion in infotainment head units and instrument clusters.

IC Role / Device Role / Timing Role: High-side synchronous rectifier in buck converter topology, switching at 250–500 kHz.

Use Value: 11 mΩ R_DS(ON) reduces conduction loss by >35% versus comparable SO-8 MOSFETs, improving efficiency at 10–20 A loads.

Use Scenario: Constant-current LED string control in automotive center console displays and ambient lighting.

IC Role / Device Role / Timing Role: PWM-controlled current switch in boost or buck-boost LED driver stage.

Use Value: Fast t_F = 1.5 ns and low Q_gd = 2.4 nC minimize switching transition losses during 1–10 kHz dimming cycles.

Industrial Power Supplies

USB-C PD Power Path

Use Scenario: Secondary-side synchronous rectification in isolated 24 V AC/DC adapters for PLC I/O modules.

IC Role / Device Role / Timing Role: Low-side switch in active clamp forward or LLC resonant converter secondary.

Use Value: R_θJC = 3.5 °C/W allows direct mounting to metal-core PCBs, sustaining 45 A peak current without external heatsink.

Use Scenario: Input protection and power path management in 20 V/3 A USB-C PD power delivery systems.

IC Role / Device Role / Timing Role: Load switch controlling VBUS routing between upstream port and downstream device.

Use Value: AEC-Q101 qualification and 100% UIS testing ensure reliable hot-plug operation under cable fault and short-circuit events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMTH3009LPSQ-13	Same R_DS(ON) (11 mΩ @ 10 V) but in PowerDI5060-8 package; R_θJC = 2.5 °C/W, higher PD = 50 W.	Better thermal performance for >50 A continuous use; larger footprint (5.0 × 6.0 mm vs 3.3 × 3.3 mm).	Select when board space permits and junction temperature must stay <125°C under sustained 45 A load.
IPD25N03S4-05	Infineon OptiMOS™; R_DS(ON) = 5.5 mΩ @ 10 V, but higher Q_g = 22 nC and no AEC-Q101 rating.	Higher efficiency at light loads due to lower R_DS(ON), but unsuitable for automotive production without requalification.	Prefer for industrial non-automotive designs where gate drive strength exceeds 2 A and qualification traceability is not required.

Compared with DMTH3009LPSQ-13 and IPD25N03S4-05, DMT3009LFVWQ-7 uniquely balances automotive qualification, compact size, and 4.5 V drive capability - making it optimal for space-constrained AEC-Q101-compliant systems where thermal margin is managed via PCB layout rather than package enlargement.

Availability

DMT3009LFVWQ-7 is available at Aetrix Electronics and suitable for automotive DC-DC converters, LED backlight drivers, and industrial power supplies requiring stable component supply across multi-year production cycles.

Supply support for DMT3009LFVWQ-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for automotive, industrial, and consumer markets.

This MOSFET belongs to Diodes' AEC-Q101-qualified Power MOSFET product line, engineered specifically for high-current, high-efficiency switching in automotive power conversion and lighting systems.

FAQ

What is the maximum safe operating temperature for DMT3009LFVWQ-7?

The device is rated for junction temperatures from –55°C to +150°C. Under continuous operation at T_C = +25°C, its maximum power dissipation is 35.7 W. Derating begins above +25°C ambient per Figure 13, reaching zero power at +100°C ambient on standard FR-4 with 2 oz copper. Thermal design must account for R_θJC = 3.5 °C/W and PCB copper area.

Does DMT3009LFVWQ-7 support logic-level gate drive?

Yes - it delivers R_DS(ON) = 13 mΩ at V_GS = 4.5 V and 20 mΩ at V_GS = 3.8 V, enabling direct drive from 5 V microcontrollers and PWM controllers without gate drivers. The gate threshold voltage V_GS(TH) ranges from 1 V to 3 V, ensuring reliable turn-on with standard logic outputs.

Is the PowerDI3333-8 (SWP) package compatible with standard reflow profiles?

Yes - it is qualified for lead-free reflow per J-STD-020, with moisture sensitivity level 1. Peak reflow temperature is 260°C for ≤60 seconds. The matte tin finish meets MIL-STD-202 Method 208 solderability requirements, and wettable flank geometry supports post-reflow AOI verification of all four side terminations.

How does the body diode performance compare to discrete Schottky alternatives?

The integrated body diode has V_SD = 0.8–1.2 V at 10 A and t_RR = 16.4 ns, which is slower and higher-V_F than Schottky diodes but eliminates component count and layout complexity in synchronous rectifiers. For high-frequency (>1 MHz) or ultra-low-loss applications, external Schottky clamping may be added, though the MOSFET's 100% UIS rating ensures robustness during freewheeling.

DMT3009LFVWQ-7 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: 8-PowerVDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 12A (Ta), 50A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 3.8V, 10V

Rds On (Max) @ Id, Vgs:: 11mOhm @ 14.4A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 12 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 823 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.3W (Ta), 35.7W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount, Wettable Flank

Supplier Device Package:: PowerDI3333-8 (SWP) Type UX

DMT3009LFVWQ-7 FAQ

1.How can I place an order for DMT3009LFVWQ-7 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMT3009LFVWQ-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMT3009LFVWQ-7 reliable?

The price and inventory of DMT3009LFVWQ-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT3009LFVWQ-7 is usually 5 days.

3.What payment methods are accepted for DMT3009LFVWQ-7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT3009LFVWQ-7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMT3009LFVWQ-7?

DMT3009LFVWQ-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMT3009LFVWQ-7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMT3009LFVWQ-7?

For technical support, including DMT3009LFVWQ-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT3009LFVWQ-7 requirements.

6.How does Aetrix verify that DMT3009LFVWQ-7 is sourced from the original manufacturer or authorized distributors?

All DMT3009LFVWQ-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT3009LFVWQ-7 meets industry standards.

7.What is the process for return or replacement of DMT3009LFVWQ-7?

All DMT3009LFVWQ-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMT3009LFVWQ-7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMT3009LFVWQ-7 part is unused and in its original packaging.

Return procedure for DMT3009LFVWQ-7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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