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Diodes Incorporated DMT3009UDT-7
- Part No.:
- DMT3009UDT-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 8-VDFN Exposed Pad
- Datasheet:
-
DMT3009UDT-7.pdf
- Description:
- MOSFET 2N-CH 30V 10.6A 8VDFN
- Quantity:
- Payment:
- Shipping:
Inventory:8,362
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Product details
Overview
DMT3009UDT-7 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in a V-DFN3030-8 package, designed for high-efficiency power switching. It delivers 30V VDSS, 11.1mΩ RDS(ON) @ 10VGS, and 30A continuous drain current at TC = +25°C, with ESD-protected gates and ultra-low 0.5–1.8V gate threshold voltage - ideal for compact DC-DC converter output stages and load-switching in portable power systems.
For engineers reviewing the DMT3009UDT datasheet, DMT3009UDT pinout, DMT3009UDT application, or DMT3009UDT equivalent, key selection criteria include its dual-channel layout, low RDS(ON) at 4.5VGS (15.0mΩ), fast switching (tF = 1.6ns), thermal resistance of 8°C/W junction-to-case, and compatibility with space-constrained PCB layouts requiring exposed-drain thermal management.
Technical Context
This dual MOSFET integrates two matched N-channel devices sharing a common source configuration in a single 3.0×3.0mm thermally enhanced DFN package. Its gate protection diodes and ±12V gate-source rating support robust drive in noisy environments, while low input capacitance (Ciss = 894pF) enables efficient operation with standard gate drivers.
The device operates across –55°C to +150°C junction temperature, with avalanche-rated capability (IAS = 19A, EAS = 18mJ) and body diode recovery time (tRR = 17ns) optimized for synchronous rectification and bidirectional power control in buck converters and OR-ing circuits.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30V - supports 24V nominal bus systems with 25% headroom for transients |
| RDS(ON) @ 10VGS | 11.1mΩ max - enables ≤330mW conduction loss at 11A DC output stage current |
| RDS(ON) @ 4.5VGS | 15.0mΩ max - ensures full enhancement with 5V logic-level gate drive |
| Qg @ 10V | 14.6nC - allows <100ns turn-on with 150mA gate driver without excessive overshoot |
| tRR | 17ns - minimizes reverse recovery losses in synchronous buck topologies |
| RθJC | 8°C/W - enables 2W+ continuous dissipation via direct PCB copper pad thermal path |
| VGS(TH) | 0.5–1.8V - guarantees reliable turn-on with 3.3V microcontroller GPIOs |
Pinout & Package
V-DFN3030-8 (Type KS) package with exposed drain pad for thermal conduction; 3.0mm × 3.0mm footprint, 0.8mm height, NiPdAu-plated terminals, moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | S1/D2 | Source of Q1 / Drain of Q2 - enables half-bridge or dual-switch configurations |
| 2 | G1 | Gate of Q1 - isolated control node with ESD protection diode to S1 |
| 3 | D1 | Drain of Q1 - high-side switching node; connected to exposed pad internally |
| 4 | S2 | Source of Q2 - common source connection point for dual-channel operation |
| 5 | G2 | Gate of Q2 - independent control with ESD protection diode to S2 |
| 6 | D2 | Drain of Q2 - second high-side switching node; tied to pin 1 externally |
| 7–8 | Exposed Pad | Drain (D1/D2) thermal and electrical connection - must be soldered to large copper area for RθJC = 8°C/W performance |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low gate threshold voltage | 0.5–1.8V range ensures turn-on with 3.3V logic and reduces gate drive power in battery-powered systems |
| Low RDS(ON) at 4.5VGS | 15.0mΩ max enables use with 5V PWM controllers without level-shifting circuitry |
| ESD-protected gate structure | HBM rating >2kV per JEDEC JESD22-A114 - eliminates need for external gate Zener clamps |
| Low input capacitance | Ciss = 894pF reduces Miller effect and improves switching efficiency at 500kHz–1MHz frequencies |
| Thermally enhanced DFN package | Exposed drain pad and 8°C/W RθJC allow ≥16W power dissipation with minimal board area |
Applications
| DC-DC Converter Output Stage | Synchronous Buck Regulator |
|---|---|
|
Use Scenario: High-current 12V-to-3.3V conversion in industrial PLC I/O modules. IC Role / Device Role: Dual-channel synchronous rectifier replacing external Schottky diodes. Use Value: Reduces conduction loss by 42% vs. discrete diode solution and enables 94% peak efficiency at 10A load. |
Use Scenario: Compact 5V/3A USB-C PD sink with tight thermal constraints. IC Role / Device Role: Integrated high-side and low-side switch in integrated buck controller reference design. Use Value: Eliminates 2 external MOSFETs and gate resistors, saving 22mm² PCB area and simplifying layout. |
| Load Switch for Portable Devices | OR-ing Circuit for Redundant Power |
|
Use Scenario: Controlled 5V rail enable/disable in medical handheld battery packs. IC Role / Device Role: Dual N-channel load switch with independent gate control for sequencing. Use Value: Enables <1μA off-state leakage and <10ms soft-start via RC-controlled gate ramp. |
Use Scenario: Dual-input 12V backup power system in telecom base station power supplies. IC Role / Device Role: Back-to-back configured MOSFET pair for bidirectional OR-ing with reverse current blocking. Use Value: Achieves <10mV forward drop at 8A and blocks >100A reverse fault current within 200ns. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMT3009LSD-7 | Same die, but in SO-8 package - higher RθJA (62°C/W vs. 112°C/W), no exposed drain pad | Preferred for through-hole prototyping or legacy SO-8 footprints; unsuitable for >2W continuous dissipation | Select when thermal budget allows larger footprint and leaded assembly is required. |
| SI6926ADQ-T1-GE3 | 30V dual N-MOSFET in PowerPAK® 1212-8; RDS(ON) = 12.5mΩ @ 10V, Qg = 16.5nC, tRR = 22ns | Higher gate charge increases driver loss; longer reverse recovery limits high-frequency synchronous rectification | Choose only if PowerPAK 1212-8 footprint compatibility is mandatory and 5% efficiency penalty is acceptable. |
Compared with DMT3009UDT-7, DMT3009LSD-7 trades thermal performance for assembly flexibility, while SI6926ADQ-T1-GE3 offers similar voltage rating but inferior switching speed and thermal resistance - making DMT3009UDT-7 optimal for space- and efficiency-critical 30V dual-switch designs.
Availability
DMT3009UDT-7 is available at Aetrix Electronics and suitable for DC-DC converter output stages, synchronous buck regulators, load switches for portable devices, and OR-ing circuits requiring stable component supply, consistent parametric performance, and long-term production continuity.
Supply support for DMT3009UDT-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and distribution operations across Asia, Europe, and North America.
The DMT3009UDT belongs to Diodes' PowerMOS™ family, engineered specifically for high-efficiency, high-density power conversion in consumer, industrial, and communications equipment where low RDS(ON), fast switching, and thermal reliability are critical.
FAQ
What is the maximum continuous drain current for each channel at 70°C case temperature?
Each channel supports 25A continuous drain current at TC = +70°C, as specified in the Absolute Maximum Ratings table under "Continuous Drain Current (Note 7)". This rating assumes proper PCB copper area for thermal conduction to the exposed drain pad and accounts for RDS(ON) increase with junction temperature.
Can DMT3009UDT-7 be used in a back-to-back configuration for AC switching?
No - DMT3009UDT-7 contains two N-channel MOSFETs with shared source terminals (pins 1 and 4), not independent four-terminal devices. Its internal schematic shows S1/D2 and S2 as separate source nodes, but the body diodes are oriented for unidirectional current flow; it lacks intrinsic bidirectional blocking capability required for true AC switching.
Is the exposed thermal pad electrically isolated from the drains?
No - the exposed pad is internally connected to both D1 and D2 (pins 3 and 6). Electrical isolation is not provided; the pad must be soldered to a PCB copper pour tied to the system ground or high-side drain net, depending on circuit topology, and cannot serve as a floating thermal interface.
Does this part meet AEC-Q101 qualification for automotive use?
No - the datasheet explicitly states that automotive-qualified versions require specific change control (AEC-Q101, PPAP, IATF 16949), and DMT3009UDT-7 is listed as "Advanced Information" without AEC-Q101 test data. For automotive applications, contact Diodes Incorporated directly for qualified variants such as the DMT3009UDWQ-7.
DMT3009UDT-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-VDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 30V
- Current - Continuous Drain (Id) @ 25°C:
- 10.6A (Ta), 30A (Tc)
- Rds On (Max) @ Id, Vgs:
- 11.1mOhm @ 11A, 10V
- Vgs(th) (Max) @ Id:
- 1.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 14.6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 894pF @ 15V
- Power - Max:
- 1.1W (Ta), 16W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- V-DFN3030-8 (Type KS)
DMT3009UDT-7 FAQ
1.How can I place an order for DMT3009UDT-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMT3009UDT-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMT3009UDT-7 reliable?
The price and inventory of DMT3009UDT-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT3009UDT-7 is usually 5 days.
3.What payment methods are accepted for DMT3009UDT-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT3009UDT-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMT3009UDT-7?
DMT3009UDT-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMT3009UDT-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMT3009UDT-7?
For technical support, including DMT3009UDT-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT3009UDT-7 requirements.
6.How does Aetrix verify that DMT3009UDT-7 is sourced from the original manufacturer or authorized distributors?
All DMT3009UDT-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT3009UDT-7 meets industry standards.
7.What is the process for return or replacement of DMT3009UDT-7?
All DMT3009UDT-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMT3009UDT-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMT3009UDT-7 part is unused and in its original packaging.
Return procedure for DMT3009UDT-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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