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Diodes Incorporated DMT3009UFVW-7

Part No.:
DMT3009UFVW-7
Manufacturer:
Diodes Incorporated
Category:
FETs, MOSFETs
Package:
8-PowerVDFN
Datasheet:
AetrixDMT3009UFVW-7.pdf
Description:
MOSFET N-CH 30V 10.6A/30A PWRDI
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,312

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Product details

Overview

DMT3009UFVW-7 from Diodes Incorporated is a 30V N-channel enhancement-mode MOSFET in PowerDI3333-8 (SWP) package, featuring 11 mΩ RDS(ON) @ VGS = 10 V, 30 A continuous drain current at TC = +25°C, and ultra-low gate threshold voltage (0.5–1.8 V). It serves as a high-efficiency synchronous rectifier or power switch in DC-DC converters and LED backlighting circuits.

For engineers reviewing the DMT3009UFVW-7 datasheet, DMT3009UFVW-7 pinout, DMT3009UFVW-7 application, or DMT3009UFVW-7 equivalent, key selection criteria include RDS(ON) at 4.5 V (13 mΩ), 100% UIS-tested robustness, wettable flank terminals for automated optical inspection, and thermal resistance RθJC = 3.5°C/W.

Technical Context

This MOSFET employs trench-gate silicon technology optimized for low conduction loss and fast switching in compact, thermally enhanced surface-mount packages. Its gate threshold voltage range (0.5–1.8 V) enables direct drive from 3.3 V and 5 V logic controllers without level shifting.

The device integrates ESD protection on the gate and supports unclamped inductive switching up to 19 A/18 mJ, with dynamic parameters including Ciss = 894 pF, Qg = 14.6 nC (at VGS = 10 V), and tF = 1.6 ns - enabling high-frequency operation in buck and boost topologies.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS 30 V - Maximum drain-source blocking voltage for 12 V and 24 V input rail applications.
RDS(ON) 11 mΩ @ VGS = 10 V - Enables <1.2 W conduction loss at 11 A, critical for thermally constrained PCB layouts.
ID (continuous) 30 A @ TC = +25°C - Supports high-current power stages when mounted on copper thermal pads.
VGS(TH) 0.5–1.8 V - Ensures reliable turn-on with standard microcontroller GPIOs and low-voltage PWM drivers.
Qg 14.6 nC @ VGS = 10 V - Determines gate driver power requirement and switching transition time in high-frequency designs.
RθJC 3.5°C/W - Confirms efficient heat transfer from junction to exposed drain pad, enabling >2.6 W power dissipation at case temperature.
tF 1.6 ns - Minimizes switching losses during turn-off in MHz-range DC-DC converters.

Pinout & Package

Package: PowerDI3333-8 (SWP), thermally enhanced surface-mount package with exposed drain pad and wettable flank leads for solder joint inspection.

Pin/Terminal Circuit Role Design Meaning
D (Drain) Main current path output terminal Connected to exposed copper pad; primary thermal path and high-current return node.
S (Source) Reference node for gate control and current sensing Three parallel pins provide low-inductance source connection and current sharing.
G (Gate) Control input for channel conduction Single-pin input with ESD protection diode; requires <15 nC charge for full enhancement.

Key Features

Feature Design Value
Wettable flank leads Enables AOI-compatible solder joint verification without X-ray, reducing post-reflow inspection cost.
100% UIS tested Guarantees avalanche ruggedness up to 19 A/18 mJ, eliminating need for external snubbers in inductive load switching.
Low RDS(ON) at 4.5 V 13 mΩ enables use with 5 V gate drivers in automotive body electronics and industrial PLC I/O modules.
ESD-protected gate HBM rating ≥2 kV ensures handling robustness during SMT assembly and board-level testing.
Green, lead-free construction Halogen- and antimony-free compound (<900 ppm Br+Cl, <1000 ppm Sb) meets IPC-1752A Tier 1 reporting requirements.

Applications

LED Backlighting Point-of-Load DC-DC Converter

Use Scenario: Driving white LED strings in automotive instrument clusters and industrial HMI displays.

IC Role / Device Role / Timing Role: Synchronous rectifier in boost converter topology, operating at 500 kHz–1 MHz switching frequency.

Use Value: 11 mΩ RDS(ON) reduces forward conduction loss by >35% vs. comparable 20 mΩ MOSFETs, improving luminance stability under varying battery voltage.

Use Scenario: High-current step-down regulation for FPGA core voltage (0.8–1.2 V) in telecom baseband cards.

IC Role / Device Role / Timing Role: Low-side power switch in synchronous buck stage, controlled by integrated PWM controller.

Use Value: Fast 1.6 ns fall time and 7.4 nC Qg at 4.5 V enable efficient operation at 1.2 MHz, minimizing output filter size and footprint.

USB-C Power Delivery Sink Automotive Body Control Module

Use Scenario: Input power path management for 20 V/5 A USB PD 3.0 compliant devices.

IC Role / Device Role / Timing Role: Reverse-polarity and overcurrent protection switch placed between connector and system PMIC.

Use Value: Ultra-low 0.5–1.8 V VGS(TH) allows direct control from PD controller's 3.3 V GPIO, eliminating level-shifter components.

Use Scenario: Load switching for interior lighting, window lift motors, and HVAC actuators in 12 V vehicle architectures.

IC Role / Device Role / Timing Role: High-side or low-side smart load switch replacing mechanical relays.

Use Value: 100% UIS qualification ensures survival during load dump transients (ISO 7637-2 Pulse 5a), reducing need for TVS clamping.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
DMN3020LFD-13 RDS(ON) = 20 mΩ @ VGS = 4.5 V; smaller PowerDI3333-8 footprint but higher on-resistance. Lower current capability (12 A) limits use to sub-10 W loads; suitable where space is more critical than efficiency. Select when board area is constrained and thermal budget permits higher conduction loss.
IPD250N03LG TO-252-3 package; RDS(ON) = 2.5 mΩ @ VGS = 10 V but no wettable flanks or UIS rating. Requires manual optical inspection or X-ray; lacks production-level avalanche validation for automotive transients. Prefer only in non-automotive, high-power applications where thermal performance outweighs process reliability requirements.

Compared with DMT3009UFVW-7, DMN3020LFD-13 trades 45% higher RDS(ON) for reduced footprint, while IPD250N03LG delivers lower on-resistance but forfeits wettable flank inspection and certified UIS ruggedness - making DMT3009UFVW-7 optimal for space-constrained, high-reliability 12–24 V power stages.

Availability

DMT3009UFVW-7 is available at Aetrix Electronics and suitable for LED backlighting, point-of-load DC-DC conversion, and USB-C power delivery sink applications requiring stable component supply, long-term lifecycle support, and automotive-grade transient robustness.

Supply support for DMT3009UFVW-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

The DMT3009UFVW belongs to Diodes' PowerMOS™ portfolio, engineered specifically for high-efficiency, high-density power conversion in consumer, industrial, and automotive systems where thermal performance and process reliability are critical.

FAQ

What is the maximum safe operating temperature for DMT3009UFVW-7?

The device has an absolute maximum junction temperature of +150°C and operates reliably from –55°C to +150°C. Thermal design must ensure junction temperature remains below this limit using the specified RθJC = 3.5°C/W and appropriate PCB copper area per the recommended pad layout. Derating curves in Figure 5 and Figure 6 confirm RDS(ON) increases by ~1.4× at TJ = 125°C versus 25°C.

Does DMT3009UFVW-7 support gate drive from 3.3 V microcontrollers?

Yes - its gate threshold voltage range (0.5–1.8 V) and guaranteed RDS(ON) of 13 mΩ at VGS = 4.5 V allow full enhancement with 3.3 V logic outputs. However, total gate charge is 7.4 nC at 4.5 V, so driver rise/fall time must be verified against required switching frequency to avoid excessive Miller plateau dwell time.

Is the PowerDI3333-8 package compatible with standard reflow profiles?

Yes - the package is rated for moisture sensitivity level 1 per J-STD-020 and uses matte tin annealed terminals compatible with standard SnPb and lead-free reflow profiles. The wettable flank geometry is designed for compatibility with automated optical inspection after standard IPC-A-610 Class 2 reflow cycles.

How is the 100% UIS test performed and what does it guarantee?

Each unit undergoes unclamped inductive switching stress at IAS = 19 A and EAS = 18 mJ using L = 0.1 mH, verifying single-pulse avalanche capability without degradation. This guarantees survival during worst-case inductive turn-off events - such as relay coil de-energization or motor phase commutation - without requiring external clamping components.

DMT3009UFVW-7 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
8-PowerVDFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
10.6A (Ta), 30A
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
11mOhm @ 11A, 10V
Vgs(th) (Max) @ Id:
1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
7.4 nC @ 10 V
Vgs (Max):
±12V
Input Capacitance (Ciss) (Max) @ Vds:
894 pF @ 15 V
FET Feature:
-
Power Dissipation (Max):
1.2W (Ta), 2.6W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount, Wettable Flank
Supplier Device Package:
PowerDI3333-8 (SWP) Type UX

DMT3009UFVW-7 FAQ

1.How can I place an order for DMT3009UFVW-7 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMT3009UFVW-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMT3009UFVW-7 reliable?

The price and inventory of DMT3009UFVW-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT3009UFVW-7 is usually 5 days.

3.What payment methods are accepted for DMT3009UFVW-7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT3009UFVW-7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMT3009UFVW-7?

DMT3009UFVW-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMT3009UFVW-7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMT3009UFVW-7?

For technical support, including DMT3009UFVW-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT3009UFVW-7 requirements.

6.How does Aetrix verify that DMT3009UFVW-7 is sourced from the original manufacturer or authorized distributors?

All DMT3009UFVW-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT3009UFVW-7 meets industry standards.

7.What is the process for return or replacement of DMT3009UFVW-7?

All DMT3009UFVW-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMT3009UFVW-7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMT3009UFVW-7 part is unused and in its original packaging.

Return procedure for DMT3009UFVW-7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMT3009UFVW-7 Tags

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