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Diodes Incorporated DMT3020LDT-7
- Part No.:
- DMT3020LDT-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 8-VDFN Exposed Pad
- Datasheet:
-
DMT3020LDT-7.pdf
- Description:
- MOSFET 2N-CH 30V 8.5A 8VDFN
- Quantity:
- Payment:
- Shipping:
Inventory:2,936
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Product details
Overview
DMT3020LDT-7 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in a V-DFN3030-8 (Type K) package, rated for 30V VDSS, 20 mΩ RDS(ON) @ VGS = 10V, and 8.5A continuous drain current at TC = +25°C. It integrates two matched low-RDS(ON) switches optimized for high-efficiency power management in compact DC-DC converters and load switching circuits.
For engineers reviewing the DMT3020LDT-7 datasheet, DMT3020LDT-7 pinout, DMT3020LDT-7 application, or DMT3020LDT-7 equivalent, key selection criteria include its dual-channel configuration, 4.5V gate drive compatibility, 13.5°C/W RθJC, body diode forward voltage of 1.2V @ 2A, and thermal performance validated on 1-inch² copper pad layouts.
Technical Context
This dual MOSFET uses planar silicon technology with optimized channel geometry to achieve low RDS(ON) while maintaining fast switching (tD(ON) = 1.8 ns, tD(OFF) = 7.5 ns) and low gate charge (Qg = 7.0 nC @ 10V). Its symmetric dual-die layout enables balanced current sharing between Q1 and Q2 under matched bias conditions.
The device features a low 1.0–2.5V gate threshold (VGS(TH)) and exhibits normalized RDS(ON) variation of ≤1.8× across –55°C to +150°C junction temperature, supporting stable operation in thermally constrained environments such as portable power banks and USB-C PD adapters.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30 V - Maximum drain-source blocking voltage before avalanche conduction begins; defines safe operating range in 24V rail applications. |
| RDS(ON) @ 10V | 20 mΩ - On-resistance measured at 6A ID; determines I²R conduction loss in high-current paths like battery protection circuits. |
| RDS(ON) @ 4.5V | 32 mΩ - Enables logic-level drive from 3.3V/5V microcontrollers without gate boosting, critical for low-voltage load switches. |
| ID (TC = 25°C) | 8.5 A - Continuous drain current rating with heatsinking; supports >5W dissipation when mounted on 1-inch² copper pad. |
| Qg @ 10V | 7.0 nC - Total gate charge required for full turn-on; directly impacts driver power consumption and switching loss in 500 kHz+ SMPS designs. |
| RθJC | 13.5 °C/W - Junction-to-case thermal resistance; enables accurate thermal modeling when soldered to exposed PCB copper thermal pads. |
| VSD @ 2A | 1.2 V - Body diode forward voltage; sets reverse recovery energy (QRR = 2.6 nC) and influences synchronous rectifier efficiency. |
Pinout & Package
V-DFN3030-8 (Type K) surface-mount package with 0.65 mm pitch, 3.0 × 3.0 mm footprint, and exposed thermal pad (Pin 1 marked by notch/dot). Molded plastic case meets UL 94V-0 flammability rating and J-STD-020 Level 1 moisture sensitivity.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Source 1 / Drain 2 | Common node linking Q1 source and Q2 drain; enables half-bridge or cascode configurations without external interconnects. |
| 2 | Gate 1 | Controls Q1 channel; requires <2.5V VGS(TH) to initiate conduction; compatible with 3.3V GPIO. |
| 3 | Drain 1 | High-side switch output for Q1; rated for 30V blocking and 8.5A continuous current. |
| 4 | Source 2 | Power return path for Q2; electrically isolated from Q1 source unless externally tied. |
| 5 | Gate 2 | Independent control input for Q2; identical threshold and drive requirements as Gate 1. |
| 6 | Drain 2 | Output terminal for Q2; shares same voltage/current ratings as Drain 1. |
| 7–8 | Thermal Pad (Exposed) | Primary heat transfer path to PCB; must be soldered to solid copper pour for RθJA = 64°C/W performance. |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(ON) @ 4.5V | 32 mΩ enables efficient 5V-input buck converters and USB port power switches without level-shifting circuitry. |
| Dual-channel integration | Two matched N-MOSFETs in one 3.0×3.0 mm package reduce board area by >40% versus discrete solutions in dual-load switching. |
| Thermally enhanced package | Exposed thermal pad and 13.5°C/W RθJC allow 1.95W power dissipation on standard FR-4 with 1-inch² copper, eliminating need for external heatsinks. |
| Green compound & RoHS compliance | Halogen- and antimony-free molding compound (<900 ppm Br/Cl, <1000 ppm Sb) meets automotive and industrial environmental mandates. |
Applications
| USB-C Power Delivery Switching | Battery Protection Circuit |
|---|---|
|
Use Scenario: Bidirectional 20V/5A power path control in USB-C PD 3.0 sink devices. IC Role / Device Role / Timing Role: Dual N-MOSFET implements back-to-back configuration for overvoltage/overcurrent isolation and reverse current blocking. Use Value: 32 mΩ RDS(ON) @ 4.5V ensures <330 mW conduction loss per FET at 5A, preserving PD negotiation headroom and thermal margin. |
Use Scenario: Cell-level overcurrent and short-circuit protection in 2S/3S lithium-ion battery packs. IC Role / Device Role / Timing Role: Q1 handles charge path; Q2 handles discharge path; shared source/drain node simplifies sense resistor placement. Use Value: Matched RDS(ON) tracking (<±5% mismatch) ensures balanced current sensing accuracy across charge/discharge cycles. |
| DC-DC Converter High-Side Switch | Industrial I/O Load Switch |
|
Use Scenario: High-frequency (1–2 MHz) synchronous buck converter in point-of-load regulators for FPGA core supplies. IC Role / Device Role / Timing Role: Q1 operates as high-side switch; Q2 unused or paralleled for higher current; low Qg minimizes driver losses. Use Value: 7.0 nC total gate charge reduces gate driver power consumption by 35% versus comparable 30V MOSFETs with >10 nC Qg. |
Use Scenario: Programmable 24V industrial sensor output stage with fault-safe shutdown and reverse polarity protection. IC Role / Device Role / Timing Role: Q1 controls load enable; Q2 drives status LED or fault signal; independent gates support sequenced activation. Use Value: 1.0–2.5V VGS(TH) allows direct interfacing with 2.5V/3.3V PLC I/O controllers without external bias networks. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN3020LFD-7 | Same RDS(ON) and VDSS, but in smaller V-DFN2020-6 package (2.0×2.0 mm); no exposed thermal pad; RθJA = 142°C/W. | Limited to <1.5W dissipation; unsuitable for >3A continuous loads without aggressive airflow or thermal vias. | Select when board space is critical and thermal load is <1.2W; avoid for battery protection or high-current DC-DC. |
| SIZ250DT-T1-GE3 | 30V, 19 mΩ @ 10V, but single-channel; SO-8 package with higher RθJA (62°C/W) and larger footprint (4.9×6.0 mm). | Requires two devices for dual functionality; adds routing complexity and increases BOM count by 100%. | Choose only if legacy SO-8 layout reuse is mandatory; otherwise DMT3020LDT-7 delivers superior density and thermal performance. |
Compared with DMN3020LFD-7 and SIZ250DT-T1-GE3, DMT3020LDT-7 uniquely combines dual-channel integration, 3.0×3.0 mm footprint, exposed thermal pad, and 32 mΩ RDS(ON) @ 4.5V-making it optimal for space-constrained, thermally demanding dual-switch applications where discrete solutions increase cost and layout risk.
Availability
DMT3020LDT-7 is available at Aetrix Electronics and suitable for USB-C power delivery systems, battery protection modules, DC-DC converter high-side switching, and industrial I/O load switching requiring stable component supply and long-term production continuity.
Supply support for DMT3020LDT-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design and manufacturing operations across Asia and the Americas.
The DMT3020LDT-7 belongs to Diodes' advanced power MOSFET product line, engineered specifically for high-efficiency, space-constrained power management in portable, industrial, and computing applications where low RDS(ON), logic-level drive, and thermal reliability are essential.
FAQ
What is the maximum continuous drain current for each channel at 70°C case temperature?
The DMT3020LDT-7 supports 7.0 A continuous drain current per channel at TC = +70°C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits imposed by the V-DFN3030-8 package's ability to dissipate heat into the PCB copper when ambient or board temperatures rise.
Can Pin 1 (S1/D2) be left floating in a single-channel configuration?
No-Pin 1 is an internal connection between Source 1 and Drain 2 and must be either grounded (if using Q1 only) or connected to the appropriate node in the circuit (e.g., to VIN if using Q2 only). Leaving it floating risks undefined bias conditions and potential latch-up due to parasitic structures.
Is the body diode of each MOSFET rated for continuous forward conduction?
Yes-the device specifies a maximum body diode forward current (IS) of 2.5 A steady-state and 55 A pulsed (10 µs, 1% duty cycle). These ratings apply independently to each channel's intrinsic body diode and are validated under the test conditions defined in the Electrical Characteristics table.
Does the DMT3020LDT-7 support gate drive from a 1.8V microcontroller GPIO?
No-while the gate threshold voltage (VGS(TH)) starts as low as 1.0 V, full enhancement and guaranteed RDS(ON) performance require ≥4.5 V gate drive. At 1.8 V, the device remains in weak inversion with RDS(ON) >500 mΩ, making it unsuitable for functional switching at that voltage.
DMT3020LDT-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-VDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 30V
- Current - Continuous Drain (Id) @ 25°C:
- 8.5A (Tc)
- Rds On (Max) @ Id, Vgs:
- 20mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 7nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 393pF @ 15V
- Power - Max:
- 670mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- V-DFN3030-8 (Type K)
DMT3020LDT-7 FAQ
1.How can I place an order for DMT3020LDT-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMT3020LDT-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMT3020LDT-7 reliable?
The price and inventory of DMT3020LDT-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT3020LDT-7 is usually 5 days.
3.What payment methods are accepted for DMT3020LDT-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT3020LDT-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMT3020LDT-7?
DMT3020LDT-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMT3020LDT-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMT3020LDT-7?
For technical support, including DMT3020LDT-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT3020LDT-7 requirements.
6.How does Aetrix verify that DMT3020LDT-7 is sourced from the original manufacturer or authorized distributors?
All DMT3020LDT-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT3020LDT-7 meets industry standards.
7.What is the process for return or replacement of DMT3020LDT-7?
All DMT3020LDT-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMT3020LDT-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMT3020LDT-7 part is unused and in its original packaging.
Return procedure for DMT3020LDT-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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