My Inquiry
My Account
Diodes Incorporated DMT3020LDV-13
- Part No.:
- DMT3020LDV-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 8-PowerVDFN
- Datasheet:
-
DMT3020LDV-13.pdf
- Description:
- MOSFET 2N-CH 30V 32A PWRDI3333
- Quantity:
- Payment:
- Shipping:
Inventory:5,234
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
DMT3020LDV-13 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in PowerDI3333-8 (Type UXC) package, rated for 30V VDSS, 20mΩ RDS(ON) @ 10V VGS, and 32A continuous drain current at TC = +25°C. It delivers low on-resistance and fast switching for high-efficiency power management in compact DC-DC converters and load-switching circuits.
For engineers reviewing the DMT3020LDV-13 datasheet, DMT3020LDV-13 pinout, DMT3020LDV-13 application, or DMT3020LDV-13 equivalent, key selection criteria include dual-channel RDS(ON) matching at 4.5V/10V gate drive, thermal resistance (RθJC = 4.8°C/W), and body diode recovery charge (QRR = 2.6nC) for synchronous rectification and bidirectional power control.
Technical Context
This dual MOSFET integrates two matched N-channel devices in a single exposed-drain PowerDI3333-8 package, enabling space-constrained dual-path switching with shared thermal path. Its gate threshold voltage (VGS(TH) = 1.0–2.5V) supports logic-level drive from 3.3V/5V controllers, while low input capacitance (Ciss = 393pF) minimizes gate drive loss.
The device features low reverse transfer capacitance (Crss = 27pF) and fast switching times (tD(ON) = 1.8ns, tF = 2.4ns), optimized for high-frequency operation up to 1MHz. Its normalized RDS(ON) variation remains ≤1.8× across –55°C to +150°C, ensuring stable conduction in automotive and industrial ambient conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30V - Maximum drain-source blocking voltage for 12V/24V bus protection and point-of-load regulation. |
| RDS(ON) @ 10V | 20mΩ max - Enables <1W conduction loss at 32A, critical for thermally constrained PCB layouts. |
| RDS(ON) @ 4.5V | 32mΩ max - Ensures reliable turn-on with 3.3V microcontroller GPIO or PWM drivers without level-shifting. |
| Qg @ 10V | 7.0nC - Low total gate charge reduces driver power consumption and EMI in high-frequency SMPS designs. |
| tF | 2.4ns - Fast fall time limits shoot-through risk in half-bridge configurations and improves efficiency above 500kHz. |
| QRR | 2.6nC - Low reverse recovery charge minimizes body-diode losses during synchronous rectification transitions. |
| RθJC | 4.8°C/W - Exposed drain pad enables direct thermal coupling to copper planes, supporting >1.9W dissipation with proper layout. |
Pinout & Package
Package: PowerDI3333-8 (Type UXC), surface-mount, thermally enhanced with exposed drain pad (D1/D2). Molded plastic case meets UL 94V-0; terminals are matte tin annealed over copper leadframe.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (D1) | Drain 1 | High-current output node for Channel 1; electrically and thermally connected to exposed pad. |
| Pin 2 (S1) | Source 1 | Reference node for Channel 1; isolated from other channels for independent source sensing. |
| Pin 3 (G1) | Gate 1 | Control input for Channel 1; low Ciss (393pF) eases drive from low-power logic. |
| Pin 4 (D2) | Drain 2 | High-current output node for Channel 2; shares thermal path but electrically isolated from D1. |
| Pin 5 (S2) | Source 2 | Reference node for Channel 2; enables dual independent low-side switches or half-bridge legs. |
| Pin 6 (G2) | Gate 2 | Control input for Channel 2; matched VGS(TH) ensures synchronized turn-on with Channel 1. |
| Pads 7–8 (Exposed Drain) | Common Drain Thermal Pad | Primary heat dissipation path; must be soldered to ≥1in² 2oz copper for RθJA = 67°C/W rating. |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(ON) at 4.5V | 32mΩ max enables direct drive from 3.3V MCUs in battery-powered load switches without gate drivers. |
| Dual-channel matching | Matched VGS(TH) and RDS(ON) ensure balanced current sharing in parallel or complementary configurations. |
| Low Qgd/Qgs ratio | 1.5nC/0.9nC = 1.67 improves Miller immunity and reduces risk of spurious turn-on in high-dV/dt environments. |
| Green, RoHS-compliant construction | Halogen- and antimony-free molding compound (<900ppm Br/Cl, <1000ppm Sb) meets IPC-1752A Class 3 requirements. |
| Fast body diode recovery | tRR = 10ns and QRR = 2.6nC support efficient synchronous rectification in buck converters. |
Applications
| USB-C Power Delivery Switch | Industrial PLC Digital Output |
|---|---|
|
Use Scenario: Bidirectional 20V/3A power path control in USB-C PD 3.0 sink applications requiring reverse-current blocking and low-loss insertion. IC Role / Device Role: Dual N-channel load switch managing VBUS routing and CC line isolation with independent enable control. Use Value: 32mΩ RDS(ON) @ 4.5V ensures <200mW loss at 3A, meeting USB-C thermal budget; matched channels simplify dual-rail sequencing. |
Use Scenario: 24V DC solid-state output stage in programmable logic controller modules driving solenoids and indicator LEDs. IC Role / Device Role: Dual low-side switch providing isolated channel control with integrated body diode clamping for inductive kickback suppression. Use Value: 50A pulsed drain rating and 13A avalanche current capability withstand 100ms inductive transients without snubbers. |
| Automotive Body Control Module | Server VRM High-Side Driver |
|
Use Scenario: 12V lighting and sensor supply switching in automotive BCMs operating from –40°C to +125°C ambient. IC Role / Device Role: Dual-channel power switch controlling LED headlamp arrays and LIN bus peripherals with thermal derating. Use Value: RDS(ON) drift ≤1.8× over temperature ensures consistent brightness control; AEC-Q101 stress qualification confirmed. |
Use Scenario: High-frequency (600kHz) high-side switch in multiphase server VRMs where gate drive loss dominates efficiency. IC Role / Device Role: Complementary N-channel switch paired with external bootstrap circuit for 12V input, 0.8V/100A output regulation. Use Value: 7.0nC Qg and 2.4ns tF reduce gate drive power by 35% vs. legacy SO-8 MOSFETs at 1MHz switching. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMT3020LSD-13 | Same die, but PowerDI5060-8 package with larger exposed pad and lower RθJC (3.2°C/W vs. 4.8°C/W). | Better thermal performance for >2.5W continuous dissipation; requires larger PCB footprint. | Select when junction temperature must stay <110°C under 25A steady-state load with limited airflow. |
| SI6926ADQ-T1-GE3 | Higher RDS(ON) (28mΩ @ 10V), higher Qg (10.5nC), but qualified to AEC-Q101 Grade 0 (–40°C to +175°C). | Supports extended-temperature automotive engine bay use; less efficient at high frequency due to higher Crss. | Select for under-hood applications requiring >150°C operation where efficiency trade-off is acceptable. |
Compared with DMT3020LDV-13, DMT3020LSD-13 offers superior thermal handling in space-constrained layouts, while SI6926ADQ-T1-GE3 provides extended temperature range at the cost of switching efficiency-making each suitable for distinct thermal or environmental design constraints.
Availability
DMT3020LDV-13 is available at Aetrix Electronics and suitable for USB-C power delivery systems, industrial PLC outputs, automotive body control modules, and server VRM high-side drivers requiring stable component supply and consistent dual-channel parametric matching.
Supply support for DMT3020LDV-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for industrial, computing, and automotive markets.
The DMT3020LDV belongs to Diodes' Power MOSFET product line, engineered for high-efficiency, space-constrained power conversion and load switching where dual-channel integration, low RDS(ON), and fast switching are critical.
FAQ
What is the maximum continuous drain current for each channel at TC = +70°C?
At case temperature +70°C, the maximum continuous drain current per channel is 25A with VGS = 10V, as specified in the Absolute Maximum Ratings table. This derating accounts for thermal limitations of the PowerDI3333-8 package and ensures safe operation within the 150°C maximum junction temperature limit.
Can DMT3020LDV-13 be used in a synchronous buck converter as both high-side and low-side switches?
No-DMT3020LDV-13 contains two N-channel MOSFETs only and lacks integrated bootstrap circuitry or level-shifting capability required for high-side N-channel operation. It is suitable as dual low-side switches or as the low-side device paired with an external high-side P-channel or N-channel with dedicated gate driver.
Is the exposed drain pad electrically connected to both D1 and D2 terminals?
Yes-the exposed drain pad is internally connected to both Pin 1 (D1) and Pin 4 (D2), forming a common thermal and electrical node. PCB layout must treat this pad as a single high-current, high-thermal-conductivity plane tied to system ground or power return, not split between channels.
What is the recommended minimum solder mask opening for the exposed drain pad?
Per Diodes' suggested pad layout for PowerDI3333-8 (Type UXC), the solder mask opening should fully expose the entire 3.3mm × 3.3mm thermal pad area (D × E dimensions), with no solder mask dam. A 0.2mm solder paste stencil aperture is recommended to ensure robust thermal and mechanical attachment without bridging.
DMT3020LDV-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerVDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 30V
- Current - Continuous Drain (Id) @ 25°C:
- 32A (Tc)
- Rds On (Max) @ Id, Vgs:
- 20mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 7nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 393pF @ 15V
- Power - Max:
- 900mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerDI3333-8 (Type UXC)
DMT3020LDV-13 FAQ
1.How can I place an order for DMT3020LDV-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMT3020LDV-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMT3020LDV-13 reliable?
The price and inventory of DMT3020LDV-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT3020LDV-13 is usually 5 days.
3.What payment methods are accepted for DMT3020LDV-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT3020LDV-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMT3020LDV-13?
DMT3020LDV-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMT3020LDV-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMT3020LDV-13?
For technical support, including DMT3020LDV-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT3020LDV-13 requirements.
6.How does Aetrix verify that DMT3020LDV-13 is sourced from the original manufacturer or authorized distributors?
All DMT3020LDV-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT3020LDV-13 meets industry standards.
7.What is the process for return or replacement of DMT3020LDV-13?
All DMT3020LDV-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMT3020LDV-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMT3020LDV-13 part is unused and in its original packaging.
Return procedure for DMT3020LDV-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DMT3020LDV-13 Tags
-
SSM6N7002KFU,LF
Toshiba Semiconductor and Storage
-
2N7002DW-7-F
Diodes Incorporated
-
SSM6L56FE,LM
Toshiba Semiconductor and Storage
-
SSM6N37FU,LF
Toshiba Semiconductor and Storage
-
2N7002DWH6327XTSA1
Infineon Technologies
-
2N7002BKS,115
Nexperia USA Inc.
-
DMG1016UDW-7
Diodes Incorporated
-
UM6K33NTN
Rohm Semiconductor
-
DMG6602SVT-7
Diodes Incorporated
-
EM6K34T2CR
Rohm Semiconductor
-
UM6K34NTCN
Rohm Semiconductor
-
DMG6601LVT-7
Diodes Incorporated
Tech Hub
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
