Diodes Incorporated DMT3020LFDB-13
- Part No.:
- DMT3020LFDB-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 6-UDFN Exposed Pad
- Datasheet:
-
DMT3020LFDB-13.pdf
- Description:
- MOSFET 2N-CH 30V 7.7A 6UDFN
- Quantity:
- Payment:

- Shipping:

Inventory:5,883
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Product details
Overview
DMT3020LFDB-13 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in a U-DFN2020-6 (Type B) package, rated for 30V VDSS, 20mΩ RDS(ON) @ 10V VGS, and 7.7A continuous drain current at +25°C. It delivers low-profile power switching with AEC-Q101 qualification, used in compact DC-DC converter output stages and load-switching circuits.
For engineers reviewing the DMT3020LFDB-13 datasheet, DMT3020LFDB-13 pinout, DMT3020LFDB-13 application, or DMT3020LFDB-13 equivalent, key selection criteria include dual-channel RDS(ON) matching at 4.5V/10V gate drive, thermal resistance of 70°C/W on enhanced PCB layout, and validated body diode recovery (tRR = 10ns, QRR = 2.6nC).
Technical Context
This dual MOSFET integrates two matched N-channel silicon die in a single 2.0mm × 2.0mm U-DFN2020-6 (Type B) leadless package with NiPdAu-plated terminals. Its gate threshold voltage (1.0–2.5V) enables direct interfacing with 3.3V logic controllers, while low input capacitance (Ciss = 393pF) supports high-frequency switching up to 1MHz in synchronous buck topologies.
The device uses trench-gate process technology to achieve simultaneous optimization of RDS(ON) and gate charge (QG = 7.0nC @ 10V), with guaranteed dynamic parameters including tD(ON) = 1.8ns and tF = 2.4ns under standard test conditions (VDD = 15V, ID = 9A, RG = 6Ω).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30V - Maximum blocking voltage for 12V/24V automotive and industrial bus applications |
| RDS(ON) @ 10V | 20mΩ - Enables ≤150mW conduction loss at 7.7A in high-efficiency power stages |
| RDS(ON) @ 4.5V | 32mΩ - Ensures full enhancement with 3.3V GPIO or low-voltage PWM controllers |
| QG @ 10V | 7.0nC - Supports <500kHz switching with minimal gate driver power dissipation |
| tRR / QRR | 10ns / 2.6nC - Reduces reverse-recovery losses in synchronous rectification |
| RθJA (enhanced layout) | 70°C/W - Achievable with 1-inch² copper pad; enables 1.8W continuous operation at +75°C ambient |
| AEC-Q101 Qualified | Validated for automotive-grade reliability per stress test requirements (HTOL, TC, HAST) |
Pinout & Package
Package: U-DFN2020-6 (Type B), 2.0mm × 2.0mm × 0.6mm profile, molded green compound (UL 94V-0), NiPdAu-plated copper leadframe.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D1 | Drain of Channel 1 | High-side or low-side switch node; electrically isolated from D2; connects to power rail or load |
| S1 | Source of Channel 1 | Return path for Channel 1; tied to ground or common source node; shares thermal pad |
| G1 | Gate of Channel 1 | Control input for independent switching of Channel 1; requires 1.0–2.5V threshold activation |
| D2 | Drain of Channel 2 | Second independent switch node; mirror layout to D1; supports dual-phase or redundancy schemes |
| S2 | Source of Channel 2 | Independent return for Channel 2; may be tied to S1 or kept separate for isolation |
| G2 | Gate of Channel 2 | Separate control input enabling asynchronous or complementary drive of second channel |
Key Features
| Feature | Design Value |
|---|---|
| 0.6mm profile | Enables integration into space-constrained portable electronics and ultra-thin automotive modules |
| Matched dual channels | Guaranteed RDS(ON) tracking within ±15% ensures balanced current sharing in parallel configurations |
| Low VGS(TH) | 1.0–2.5V range allows direct drive from microcontroller GPIO without level-shifting circuitry |
| AEC-Q101 qualified | Validated for automotive power management use cases including body control modules and ADAS subsystems |
| Halogen- and antimony-free | Meets JEDEC J-STD-709B green material requirements (<900ppm Br, <900ppm Cl, <1000ppm Sb) |
Applications
| USB-C Power Delivery Switch | Automotive Body Control Module |
|---|---|
|
Use Scenario: Bidirectional 20V/3A power path switching in USB-C PD 3.0 sink applications. IC Role / Device Role: Dual-channel load switch controlling VBUS and CC line power routing. Use Value: 32mΩ RDS(ON) @ 4.5V ensures <300mW loss at full load; 0.6mm height fits under connector housing. |
Use Scenario: Independent control of LED lighting zones and sensor bias rails in vehicle door modules. IC Role / Device Role: Dual low-side switch managing two 12V loads with independent enable signals. Use Value: AEC-Q101 qualification and -55°C to +150°C operation ensure reliability across cabin temperature extremes. |
| Portable Medical Monitor Power Rail | Industrial IoT Sensor Node |
|
Use Scenario: Isolated 5V/3.3V rail sequencing and battery backup switchover in handheld diagnostics devices. IC Role / Device Role: Dual-channel high-side switch enabling controlled power-up/down of analog front-end and MCU domains. Use Value: Matched RDS(ON) minimizes timing skew between rail transitions; 70°C/W RθJA sustains operation without heatsink. |
Use Scenario: Remote sensor node with dual power domains: one for LoRaWAN radio, one for environmental sensing ICs. IC Role / Device Role: Dual independent load switches enabling selective power gating to extend battery life. Use Value: Low 100nA IGSS and 1μA IDSS ensure <1μA standby leakage per channel, critical for multi-year battery life. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN3020LFD-7 | Single-channel variant in same U-DFN2020-6 package; identical RDS(ON) and gate charge specs | Lacks dual-channel integration; requires two devices for same functionality | Select when board layout permits discrete placement and independent thermal management is preferred |
| AOB2032L | Higher RDS(ON) (28mΩ @ 10V); larger 3.3mm × 3.3mm SO-8 package; higher QG (12nC) | Lower switching efficiency and larger footprint; not AEC-Q101 qualified | Consider only for non-automotive cost-sensitive designs where 0.6mm profile is not required |
Compared with DMT3020LFDB-13, DMN3020LFD-7 increases component count and layout area but offers identical per-channel performance, while AOB2032L trades off size, efficiency, and automotive qualification for broader distributor availability and legacy design compatibility.
Availability
DMT3020LFDB-13 is available at Aetrix Electronics and suitable for USB-C power delivery systems, automotive body control modules, and portable medical monitors requiring stable component supply, AEC-Q101 compliance, and sub-1mm profile packaging.
Supply support for DMT3020LFDB-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global semiconductor company specializing in discrete, analog, and mixed-signal solutions, with manufacturing and testing facilities across Asia and North America.
The DMT3020LFDB belongs to Diodes' high-density power MOSFET product line, engineered specifically for space-constrained, high-efficiency DC-DC conversion and load-switching applications in automotive, computing, and portable electronics.
FAQ
What is the maximum junction temperature rating for DMT3020LFDB-13?
The device is rated for continuous operation from –55°C to +150°C junction temperature. Thermal derating begins above +75°C ambient when mounted on a 1-inch² copper pad (RθJA = 70°C/W), with absolute maximum TJ limited to 150°C per datasheet Section 3.
Can DMT3020LFDB-13 be used in synchronous rectification?
Yes - its body diode exhibits tRR = 10ns and QRR = 2.6nC at IF = 9A, enabling efficient synchronous rectification in buck converters operating up to 500kHz. Gate drive must be timed to commutate before body diode conduction begins.
Is the U-DFN2020-6 (Type B) package compatible with standard reflow profiles?
Yes - it meets IPC/JEDEC J-STD-020 moisture sensitivity Level 1 and is qualified for standard lead-free reflow (peak 260°C, 60s max above 217°C). The NiPdAu terminal finish ensures reliable solderability per MIL-STD-202, Method 208.
Does DMT3020LFDB-13 support parallel operation of both channels?
Yes - the matched RDS(ON) specification guarantees ≤15% parametric spread between channels, enabling safe parallel operation for increased current capacity. Layout symmetry and shared thermal pad are required to maintain current balance.
DMT3020LFDB-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-UDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 30V
- Current - Continuous Drain (Id) @ 25°C:
- 7.7A (Ta)
- Rds On (Max) @ Id, Vgs:
- 20mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 7nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 393pF @ 15V
- Power - Max:
- 700mW
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- U-DFN2020-6 (Type B)
DMT3020LFDB-13 FAQ
1.How can I place an order for DMT3020LFDB-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMT3020LFDB-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMT3020LFDB-13 reliable?
The price and inventory of DMT3020LFDB-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT3020LFDB-13 is usually 5 days.
3.What payment methods are accepted for DMT3020LFDB-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT3020LFDB-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMT3020LFDB-13?
DMT3020LFDB-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMT3020LFDB-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMT3020LFDB-13?
For technical support, including DMT3020LFDB-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT3020LFDB-13 requirements.
6.How does Aetrix verify that DMT3020LFDB-13 is sourced from the original manufacturer or authorized distributors?
All DMT3020LFDB-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT3020LFDB-13 meets industry standards.
7.What is the process for return or replacement of DMT3020LFDB-13?
All DMT3020LFDB-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMT3020LFDB-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMT3020LFDB-13 part is unused and in its original packaging.
Return procedure for DMT3020LFDB-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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