Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Diodes Incorporated DMT3020LFDB-7

Part No.:
DMT3020LFDB-7
Manufacturer:
Diodes Incorporated
Category:
FET, MOSFET Arrays
Package:
6-UDFN Exposed Pad
Datasheet:
AetrixDMT3020LFDB-7.pdf
Description:
MOSFET 2N-CH 30V 7.7A 6UDFN
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,138

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

DMT3020LFDB-7 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in a U-DFN2020-6 (Type B) package, rated for 30V VDSS, 20 mΩ RDS(ON) @ VGS = 10 V, and 7.7 A continuous drain current at TA = +25°C. It delivers low-profile power switching in space-constrained DC-DC converters and load-switching circuits.

For engineers reviewing the DMT3020LFDB-7 datasheet, DMT3020LFDB-7 pinout, DMT3020LFDB-7 application, or DMT3020LFDB-7 equivalent, key selection criteria include its dual-channel layout, 0.6 mm profile, AEC-Q101 qualification, gate threshold voltage range (1.0–2.5 V), and thermal resistance of 70 °C/W under enhanced PCB layout conditions.

Technical Context

This dual MOSFET integrates two matched N-channel devices sharing no internal connection-each channel operates independently with separate gate, source, and drain terminals. Its design emphasizes low RDS(ON) at both 4.5 V and 10 V drive, enabling compatibility with 3.3 V and 5 V logic-level control.

The device uses a trench-gate process to achieve high transconductance and fast switching (tD(ON) = 1.8 ns, tD(OFF) = 7.5 ns) while maintaining low gate charge (QG = 3.6 nC @ 4.5 V). Body diode recovery is characterized with tRR = 10 ns and QRR = 2.6 nC under defined di/dt conditions.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS 30 V - Maximum drain-source blocking voltage before avalanche conduction begins.
RDS(ON) @ VGS = 10 V 20 mΩ - Enables <150 mW conduction loss at 7.7 A, critical for high-efficiency buck converter high-side switches.
RDS(ON) @ VGS = 4.5 V 32 mΩ - Supports direct interfacing with 3.3 V microcontroller GPIO without level-shifting.
QG @ VGS = 4.5 V 3.6 nC - Low gate charge reduces driver power demand and enables >1 MHz switching in compact power stages.
TJ Range −55°C to +150°C - Qualified per AEC-Q101, suitable for under-hood automotive and industrial ambient environments.
RθJA (enhanced layout) 70 °C/W - Achieved with 1-inch² copper pad; determines maximum sustainable power dissipation (1.8 W) in thermally optimized PCBs.

Pinout & Package

Package: U-DFN2020-6 (Type B), 2.0 mm × 2.0 mm × 0.6 mm, NiPdAu-plated copper leadframe, moisture sensitivity level 1.

Pin/Terminal Circuit Role Design Meaning
D1 Drain of Channel 1 High-current output node; electrically isolated from D2; connects to input rail in high-side switch configuration.
S1 Source of Channel 1 Reference node for Channel 1; tied to ground or load return; shares no internal connection with S2.
G1 Gate of Channel 1 Control terminal for Channel 1; requires ≤2.5 V threshold for turn-on; decoupling capacitor recommended near IC.
D2 Drain of Channel 2 Independent high-current output node; supports dual-load or half-bridge topologies with external bootstrap.
S2 Source of Channel 2 Reference node for Channel 2; may be floated in high-side applications; not internally connected to S1.
G2 Gate of Channel 2 Independent control terminal; identical electrical characteristics to G1; enables synchronous dual-channel timing.

Key Features

Feature Design Value
0.6 mm profile Enables use in ultra-thin portable electronics and stacked PCB assemblies where Z-height is constrained to ≤0.7 mm.
AEC-Q101 qualification Validated for automotive-grade reliability including temperature cycling, HTRB, and ESD testing-supports infotainment and body control modules.
Low VGS(TH) (1.0–2.5 V) Ensures full enhancement with standard 3.3 V logic outputs; eliminates need for gate drivers in low-power load-switching applications.
Green compound (halogen/antimony-free) Meets IPC-1752A Class 1 reporting requirements and supports RoHS 3 (2015/863/EU) compliance for global market access.

Applications

USB Type-C Power Delivery Switch Automotive Cabin LED Driver

Use Scenario: Bidirectional 5–20 V power path control between host and peripheral in USB PD 3.0 compliant systems.

IC Role / Device Role: Dual-channel load switch managing VBUS and CC line protection paths with independent enable control.

Use Value: 32 mΩ RDS(ON) @ 4.5 V ensures <50 mV drop at 1.5 A, preserving PD negotiation voltage margins across long cables.

Use Scenario: Individual dimmable LED string control in vehicle interior lighting with PWM frequency >1 kHz.

IC Role / Device Role: Low-side constant-current switch driving 3–5 white LEDs per channel with integrated current-sense feedback.

Use Value: AEC-Q101 rating and −55°C to +150°C operation ensure stable performance during cold cranking and under-hood thermal transients.

Portable SSD Power Sequencing Industrial PLC I/O Module

Use Scenario: Controlled power-up sequencing of NAND flash, controller, and DRAM rails in M.2 NVMe SSDs.

IC Role / Device Role: Dual independent high-side switches enabling staggered 3.3 V and 1.2 V rail activation with soft-start timing.

Use Value: Matched channel parameters minimize timing skew; 20 mΩ RDS(ON) limits inrush-induced voltage droop to <100 mV.

Use Scenario: Isolated 24 V DC digital output stage driving solenoids and relays in modular automation controllers.

IC Role / Device Role: Dual-channel low-side switch providing fault-isolated actuator control with integrated overtemperature shutdown.

Use Value: 7.7 A rating per channel supports 2 A steady-state loads with 3× surge margin; 150°C max TJ accommodates sealed enclosure operation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
DMN3020LFG-7 Same die, but in SOT-23-6 package; RθJA = 170 °C/W (no thermal pad); 0.95 mm height. Lower power density (max 0.7 W); unsuitable for >3 A continuous loads without forced air. Select when board space allows larger footprint and thermal performance is secondary to cost.
AOB410L Single-channel 30 V MOSFET in TO-252; RDS(ON) = 18 mΩ @ 10 V; QG = 10.5 nC; RθJA = 60 °C/W. Requires two discrete devices for dual functionality; higher gate drive energy; better thermal dissipation. Select when higher current (>10 A/channel) or superior thermal management is required, and board area permits TO-252 layout.

Compared with DMT3020LFDB-7, DMN3020LFG-7 trades thermal capability for lower assembly cost and simpler reflow, while AOB410L offers higher current handling at the expense of integration density and gate drive efficiency.

Availability

DMT3020LFDB-7 is available at Aetrix Electronics and suitable for USB Type-C power delivery systems, automotive cabin lighting, and portable SSD power sequencing requiring stable component supply and AEC-Q101-compliant sourcing.

Supply support for DMT3020LFDB-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global semiconductor company specializing in discrete, analog, and mixed-signal solutions for power management, signal integrity, and connectivity applications.

The DMT3020LFDB belongs to Diodes' low-voltage logic-level MOSFET product line, engineered for high-efficiency, space-constrained power switching in consumer, computing, and automotive electronics.

FAQ

Is DMT3020LFDB-7 suitable for hot-swap applications?

Yes. Its 30 V VDSS, low RDS(ON), and fast switching (tF = 2.4 ns) support controlled inrush limiting in hot-swap circuits. The dual-channel architecture allows independent enable control for redundant power paths, and its AEC-Q101 qualification confirms robustness against transient overstress events typical in live-insertion scenarios.

What is the maximum safe operating current at 85°C ambient?

At TA = 85°C with the enhanced 1-inch² copper layout (RθJA = 70 °C/W), the maximum continuous drain current per channel is 6.2 A. This is derived from the derating curve in the datasheet and assumes TJ(max) = 150°C, yielding ΔT = 65°C and allowable power dissipation of 0.93 W, consistent with the 32 mΩ RDS(ON) @ 4.5 V condition.

Does DMT3020LFDB-7 integrate back-to-back MOSFETs for bidirectional blocking?

No. DMT3020LFDB-7 contains two independent N-channel MOSFETs with no internal series or anti-parallel connection. Each channel has separate D, S, and G terminals. For true bidirectional blocking, external circuitry (e.g., series-connected pairs or dedicated bidirectional switches) is required.

Can the body diodes be used for synchronous rectification?

Yes-each channel's intrinsic body diode is characterized with VSD = 1.0 V @ 2 A and tRR = 10 ns, making it usable in low-frequency (<500 kHz) synchronous rectifier designs. However, for high-frequency operation, external Schottky diodes or actively driven synchronous FETs are preferred due to the diode's forward voltage and recovery limitations.

DMT3020LFDB-7 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
6-UDFN Exposed Pad
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
MOSFET (Metal Oxide)
Configuration:
2 N-Channel (Dual)
FET Feature:
-
Drain to Source Voltage (Vdss):
30V
Current - Continuous Drain (Id) @ 25°C:
7.7A
Rds On (Max) @ Id, Vgs:
20mOhm @ 9A, 10V
Vgs(th) (Max) @ Id:
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:
393pF @ 15V
Power - Max:
700mW
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
U-DFN2020-6 (Type B)

DMT3020LFDB-7 FAQ

1.How can I place an order for DMT3020LFDB-7 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMT3020LFDB-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMT3020LFDB-7 reliable?

The price and inventory of DMT3020LFDB-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT3020LFDB-7 is usually 5 days.

3.What payment methods are accepted for DMT3020LFDB-7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT3020LFDB-7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMT3020LFDB-7?

DMT3020LFDB-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMT3020LFDB-7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMT3020LFDB-7?

For technical support, including DMT3020LFDB-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT3020LFDB-7 requirements.

6.How does Aetrix verify that DMT3020LFDB-7 is sourced from the original manufacturer or authorized distributors?

All DMT3020LFDB-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT3020LFDB-7 meets industry standards.

7.What is the process for return or replacement of DMT3020LFDB-7?

All DMT3020LFDB-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMT3020LFDB-7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMT3020LFDB-7 part is unused and in its original packaging.

Return procedure for DMT3020LFDB-7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMT3020LFDB-7 Tags

  • DMT3020LFDB-7
  • DMT3020LFDB-7 PDF
  • DMT3020LFDB-7 Datasheet
  • DMT3020LFDB-7 Specifications
  • DMT3020LFDB-7 Images
  • Diodes Incorporated
  • Diodes Incorporated DMT3020LFDB-7
  • Buy DMT3020LFDB-7
  • DMT3020LFDB-7 Price
  • DMT3020LFDB-7 Distributor
  • DMT3020LFDB-7 Supplier
  • DMT3020LFDB-7 Wholesale
Related Products
SSM6N7002KFU,LF
SSM6N7002KFU,LF

Toshiba Semiconductor and Storage

2N7002DW-7-F
2N7002DW-7-F

Diodes Incorporated

SSM6L56FE,LM
SSM6L56FE,LM

Toshiba Semiconductor and Storage

SSM6N37FU,LF
SSM6N37FU,LF

Toshiba Semiconductor and Storage

2N7002DWH6327XTSA1
2N7002DWH6327XTSA1

Infineon Technologies

2N7002BKS,115
2N7002BKS,115

Nexperia USA Inc.

DMG1016UDW-7
DMG1016UDW-7

Diodes Incorporated

UM6K33NTN
UM6K33NTN

Rohm Semiconductor

DMG6602SVT-7
DMG6602SVT-7

Diodes Incorporated

EM6K34T2CR
EM6K34T2CR

Rohm Semiconductor

UM6K34NTCN
UM6K34NTCN

Rohm Semiconductor

DMG6601LVT-7
DMG6601LVT-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER