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Diodes Incorporated DMT3020LSD-13
- Part No.:
- DMT3020LSD-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
DMT3020LSD-13.pdf
- Description:
- MOSFET 2N-CH 30V 16A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:2,318
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Product details
Overview
DMT3020LSD from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in SO-8 package, rated for 30V VDSS, 20 mΩ RDS(ON) @ 10V VGS, and 16A continuous drain current at TC = +25°C. It delivers low gate threshold (1.0–2.5V), fast switching (tD(ON) = 1.8 ns), and 100% production-tested UIS robustness-optimized for synchronous rectification in DC-DC converters.
For engineers reviewing the DMT3020LSD datasheet, DMT3020LSD pinout, DMT3020LSD application, or DMT3020LSD equivalent, key selection criteria include its dual-N-channel topology, 4.5V-compatible RDS(ON) of 32 mΩ, SO-8 thermal performance (RθJA = 81 °C/W with copper pad), and AEC-Q101-qualified automotive variant (DMT3020LSDQ).
Technical Context
This dual MOSFET integrates two matched N-channel silicon devices in a single SO-8 package with shared source terminals and independent gates and drains. Its design emphasizes low conduction loss and high-speed switching via minimized input capacitance (Ciss = 393 pF) and gate charge (Qg = 3.6 nC @ 4.5V).
The device supports logic-level drive down to 4.5V, features low reverse transfer capacitance (Crss = 27 pF), and maintains stable RDS(ON) across –55°C to +150°C junction temperature-enabling reliable operation in thermally constrained power stages.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30 V - Maximum drain-source blocking voltage before avalanche onset; sets upper limit for buck converter input or synchronous rectifier output swing. |
| RDS(ON) @ 10V | 20 mΩ - Conduction loss of 1.62 W at 9A; enables high-efficiency operation in 12V-input point-of-load regulators. |
| RDS(ON) @ 4.5V | 32 mΩ - Ensures usable on-resistance with 5V or 3.3V gate drivers; critical for USB PD or battery-powered DC-DC stages. |
| Qg @ 4.5V | 3.6 nC - Low gate charge reduces driver power loss and enables >1 MHz switching without excessive gate drive dissipation. |
| tD(ON) + tR | 3.7 ns - Fast turn-on (1.8 ns delay + 1.9 ns rise) minimizes overlap loss in synchronous buck topologies. |
| EAS | 8.5 mJ - Energy-handling capability under unclamped inductive switching ensures reliability during load dump or short-circuit events. |
| RθJA (with pad) | 81 °C/W - Thermal resistance with 1-inch² copper plate allows 1.5 W continuous dissipation at ≤85°C ambient without forced cooling. |
Pinout & Package
Package: SO-8 surface-mount plastic package with exposed drain pad for enhanced thermal performance; UL 94V-0 rated, RoHS-compliant, halogen-free.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 | Source 1 (S1) | Common source terminal for first MOSFET; electrically tied to pins 5, 6, 7 in internal dual-die layout. |
| 4 | Gate 1 (G1) | Independent control input for first N-channel MOSFET; requires <2.5V threshold for turn-on. |
| 5, 6, 7 | Source 2 (S2) | Common source terminal for second MOSFET; internally connected to pins 1–3 as shared source node. |
| 8 | Gate 2 (G2) | Independent control input for second N-channel MOSFET; fully isolated from G1 for asymmetric drive schemes. |
| Exposed Pad | Drain 1 / Drain 2 (D1/D2) | Thermally and electrically common drain connection for both MOSFETs; must be soldered to PCB ground/power plane. |
Key Features
| Feature | Design Value |
|---|---|
| Dual N-channel topology | Enables synchronous rectification or half-bridge configuration without external level-shifting; reduces component count in compact DC-DC modules. |
| 100% UIS tested | Guarantees minimum 13A avalanche current and 8.5mJ energy handling-critical for automotive load-dump survival and industrial motor-drive freewheeling. |
| Low VGS(TH) | 1.0–2.5V range ensures turn-on with standard logic outputs (e.g., microcontroller GPIO), eliminating need for dedicated gate drivers in low-power systems. |
| Green compound & lead-free | Halogen- and antimony-free molding compound (<900 ppm Br/Cl, <1000 ppm Sb) meets IEC 61249-2-21 and automotive environmental compliance requirements. |
| SO-8 thermal design | Exposed drain pad and optimized copper pad layout deliver 35% lower RθJA vs. standard SO-8-supports 1.5W continuous power in space-constrained LED backlight inverters. |
Applications
| LED Backlight Inverters | Synchronous Buck Converters |
|---|---|
|
Use Scenario: Driving CCFL or high-brightness LED strings in LCD displays using resonant or PWM-controlled inverters. IC Role / Device Role: Dual N-channel MOSFET configured as synchronous rectifier pair in secondary-side full-wave rectification stage. Use Value: 20 mΩ RDS(ON) reduces conduction loss by >40% vs. discrete diode solutions, enabling higher efficiency (>92%) and cooler operation in thin-bezel displays. |
Use Scenario: High-frequency step-down conversion for FPGA core supplies or ASIC power rails in telecom and computing equipment. IC Role / Device Role: Upper and lower switches in synchronous buck topology operating at 500 kHz–2 MHz. Use Value: Matched RDS(ON) and Qg between channels minimize shoot-through risk and improve duty-cycle accuracy, supporting tight output regulation (±1%) at 12A load. |
| USB-C Power Delivery Modules | Automotive Body Control Units |
|
Use Scenario: Bidirectional power path management in USB-C PD 3.0 sink/source negotiation circuits. IC Role / Device Role: Dual N-MOSFET used as back-to-back switch for reverse-current blocking and VBUS control. Use Value: Low 4.5V RDS(ON) (32 mΩ) ensures <50 mV drop at 1.5A, meeting USB-C voltage-drop spec while enabling compact 2-layer PCB layouts. |
Use Scenario: Load switching and smart high-side driving in 12V automotive subsystems (e.g., HVAC actuators, mirror controls). IC Role / Device Role: Dual N-channel configured as high-side switch with external charge pump or as low-side driver for brushed DC motors. Use Value: AEC-Q101-qualified variant (DMT3020LSDQ) provides validated 150°C operation and PPAP support-reducing qualification time for Tier-1 suppliers. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN3020LSD-13 | Same SO-8 package and 30V/20mΩ rating but single-channel; lacks dual-gate isolation and shared-source architecture. | Requires two separate devices for dual-switch functions-increasing board area and gate-drive complexity. | Select only when independent channel control or thermal separation is required; not suitable for space-constrained synchronous rectifiers. |
| SI6926ADQ-T1-GE3 | 30V dual N-MOSFET with 22mΩ @ 10V, but higher Qg (6.5nC @ 4.5V) and no production UIS testing. | Higher switching loss limits use in >1MHz DC-DC; unsuitable for automotive load-dump scenarios without derating. | Prefer for cost-sensitive consumer applications where avalanche robustness is non-critical and gate drive strength exceeds 2A peak. |
Compared with DMT3020LSD, DMN3020LSD-13 increases component count and layout complexity for dual-switch functions, while SI6926ADQ-T1-GE3 trades off switching efficiency and ruggedness for marginally lower unit cost-making DMT3020LSD optimal for high-reliability, high-frequency power stages.
Availability
DMT3020LSD is available at Aetrix Electronics and suitable for LED backlight inverters, synchronous buck converters, USB-C power delivery modules, and automotive body control units requiring stable component supply and consistent parametric performance across production batches.
Supply support for DMT3020LSD includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-efficiency power management, signal integrity, and protection solutions for industrial, computing, and automotive markets.
The DMT3020LSD belongs to Diodes' "PowerMOS" product line, engineered specifically for high-density, high-efficiency DC-DC conversion and synchronous rectification-emphasizing low RDS(ON), fast switching, and robust avalanche performance in compact packages.
FAQ
What is the maximum continuous drain current for DMT3020LSD at 70°C case temperature?
The datasheet specifies 13A continuous drain current at TC = +70°C with VGS = 10V. This reflects thermal derating due to junction-to-case resistance (RθJC = 20 °C/W) and ambient conditions-designers must ensure heatsinking maintains TC ≤ 70°C to sustain this rating without exceeding 150°C maximum junction temperature.
Does DMT3020LSD support 3.3V logic-level gate drive?
No-its gate threshold voltage range is 1.0–2.5V, but RDS(ON) is not characterized below VGS = 4.5V. At 3.3V, the device operates in weak inversion with significantly elevated on-resistance (>100 mΩ), leading to excessive conduction loss; it requires ≥4.5V gate drive for specified 32 mΩ performance.
How is the SO-8 exposed pad electrically connected internally?
The exposed pad is internally bonded to both drain terminals (D1 and D2) and serves as the sole thermal and electrical path for drain current. It is not isolated or floating-PCB layout must connect it directly to the main power ground or high-current drain net, with ≥80% solder coverage to achieve the rated RθJA of 81 °C/W.
Is there an automotive-qualified version of DMT3020LSD?
Yes-the DMT3020LSDQ is the AEC-Q101 qualified variant, manufactured in IATF 16949 certified facilities, with full PPAP documentation and extended temperature validation (–40°C to +150°C). It shares identical electrical specs and SO-8 mechanical outline but adds automotive change control and lot-level traceability.
DMT3020LSD-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 30V
- Current - Continuous Drain (Id) @ 25°C:
- 16A (Tc)
- Rds On (Max) @ Id, Vgs:
- 20mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 7nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 393pF @ 15V
- Power - Max:
- 1W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
DMT3020LSD-13 FAQ
1.How can I place an order for DMT3020LSD-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMT3020LSD-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMT3020LSD-13 reliable?
The price and inventory of DMT3020LSD-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT3020LSD-13 is usually 5 days.
3.What payment methods are accepted for DMT3020LSD-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT3020LSD-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMT3020LSD-13?
DMT3020LSD-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMT3020LSD-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMT3020LSD-13?
For technical support, including DMT3020LSD-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT3020LSD-13 requirements.
6.How does Aetrix verify that DMT3020LSD-13 is sourced from the original manufacturer or authorized distributors?
All DMT3020LSD-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT3020LSD-13 meets industry standards.
7.What is the process for return or replacement of DMT3020LSD-13?
All DMT3020LSD-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMT3020LSD-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMT3020LSD-13 part is unused and in its original packaging.
Return procedure for DMT3020LSD-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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