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Diodes Incorporated DMT3020UFDB-13
- Part No.:
- DMT3020UFDB-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 6-UDFN Exposed Pad
- Datasheet:
-
DMT3020UFDB-13.pdf
- Description:
- MOSFET 2N-CH 30V 6.5A 6UDFN
- Quantity:
- Payment:
- Shipping:
Inventory:9,235
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Product details
Overview
DMT3020UFDB-13 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in U-DFN2020-6 (Type B) package, rated for 30V VDSS, 21mΩ RDS(ON) @ 10V VGS, and 6.5A ID at TA = +25°C. It delivers low gate threshold (0.4–1.7V), ESD-protected gates, and 0.6mm profile for space-constrained power switches in portable and battery-powered systems.
For engineers reviewing the DMT3020UFDB-13 datasheet, DMT3020UFDB-13 pinout, DMT3020UFDB-13 application, or DMT3020UFDB-13 equivalent, this device is selected for high-efficiency load switching where low RDS(ON) at 4.5V drive, fast switching (tF = 4ns), and thermal performance (RθJA = 95°C/W on 1-inch copper) are critical.
Technical Context
This dual MOSFET integrates two independent N-channel channels in a single 2.0×2.0mm U-DFN package with exposed drain pads for enhanced thermal dissipation. Each channel supports ±12V gate drive and features integrated gate protection diodes for ESD robustness (HBM >2kV).
Its low 24mΩ RDS(ON) @ 4.5V VGS enables efficient operation from 5V logic rails, while dynamic parameters-including Qg = 4.6nC @ 4.5V and Ciss = 383pF-support high-frequency PWM control in DC-DC converters and motor drivers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30V - Maximum drain-source blocking voltage for 5V/12V system-level power switches |
| RDS(ON) @ 10V | 21mΩ - Enables ≤130mW conduction loss at 6.5A continuous current |
| RDS(ON) @ 4.5V | 30mΩ - Supports direct interface with 3.3V/5V microcontroller GPIO without level-shifting |
| Qg @ 4.5V | 4.6nC - Reduces gate-drive power and switching transition time in high-frequency applications |
| tF | 4ns - Minimizes switching losses during turn-off in synchronous rectifiers and buck converters |
| RθJA (1″ Cu) | 95°C/W - Allows 1.3W continuous power dissipation with <125°C junction rise on standard PCB layout |
| VGS(TH) | 0.4–1.7V - Ensures reliable turn-on with low-voltage logic and reduces risk of partial enhancement |
Pinout & Package
Package: U-DFN2020-6 (Type B), 2.0mm × 2.0mm × 0.6mm, thermally enhanced with exposed drain pads (D1/D2) and NiPdAu-plated terminals.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (S1) | Source of Channel 1 | Low-impedance return path for first MOSFET; tied to ground plane in high-current switch designs |
| Pin 2 (G1) | Gate of Channel 1 | Control input requiring <1.7V threshold; routed with short trace to minimize ringing |
| Pin 3 (D1) | Drain of Channel 1 | Exposed pad - primary thermal path and high-current output node; must be soldered to large copper area |
| Pin 4 (D2) | Drain of Channel 2 | Exposed pad - electrically isolated from D1; enables dual independent high-side or low-side switching |
| Pin 5 (G2) | Gate of Channel 2 | Independent control input; identical threshold and drive requirements as G1 |
| Pin 6 (S2) | Source of Channel 2 | Separate return path for second channel; allows differential or complementary switching configurations |
Key Features
| Feature | Design Value |
|---|---|
| 0.6mm profile | Enables use in ultra-thin consumer devices (e.g., wearables, TWS earbuds) where Z-height is constrained |
| ESD-protected gate | HBM >2kV rating eliminates need for external gate protection in board-level ESD environments |
| Low RDS(ON) @ 4.5V | 30mΩ ensures <470mW loss at 4A, supporting energy-efficient USB-C PD and power bank designs |
| Lead-free & halogen-free | Meets RoHS 3 (2015/863/EU) and "Green" definition (<900ppm Br/Cl, <1000ppm Sb) for eco-compliant manufacturing |
| Moisture sensitivity Level 1 | Eliminates bake requirement prior to reflow, reducing assembly cost and process complexity |
Applications
| Battery Protection Circuit | USB Power Delivery Switch |
|---|---|
|
Use Scenario: Dual-MOSFET reverse-polarity and overcurrent protection in Li-ion battery packs. IC Role / Device Role / Timing Role: Back-to-back N-channel configuration provides bidirectional blocking and low-loss charge/discharge path control. Use Value: 30V rating covers 3S–4S battery stacks; 21mΩ RDS(ON) limits voltage drop to <130mV at 6.5A, preserving pack efficiency. |
Use Scenario: Load switching between USB-C source and sink ports in portable chargers and docks. IC Role / Device Role / Timing Role: Independent channel control enables seamless source/sink role swapping without external logic. Use Value: 4.5V RDS(ON) of 30mΩ ensures <150mV drop at 5A, meeting USB PD 3.0 voltage regulation specs under full load. |
| LED Driver Current Control | IoT Sensor Node Power Gating |
|
Use Scenario: High-side current regulation for RGB LED strings in smart lighting modules. IC Role / Device Role / Timing Role: Channel 1 acts as PWM-controlled high-side switch; Channel 2 isolates auxiliary bias circuitry. Use Value: Fast 4ns fall time supports >2MHz PWM dimming; low Qg reduces gate driver loading in compact MCU-based designs. |
Use Scenario: Peripherals power gating in BLE/Wi-Fi sensor nodes to extend battery life. IC Role / Device Role / Timing Role: Dual independent switches enable selective shutdown of RF transceiver, ADC, and memory subsystems. Use Value: 0.4V min VGS(TH) guarantees turn-on with weak GPIOs; 0.6mm height fits under 1.0mm shield cans in miniaturized PCBs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN3020LFG-7 | Same U-DFN2020-6 package but single-channel; RDS(ON) = 20mΩ @ 10V, 28mΩ @ 4.5V | Lacks dual-channel integration; requires two devices for back-to-back or independent switching | Select when only one switch is needed and board area permits discrete placement |
| AOB2022 | SO-8 package; 30V, 22mΩ @ 10V, 32mΩ @ 4.5V; higher RθJA = 62°C/W (JEDEC standard) | Higher profile (1.75mm) and larger footprint; better suited for high-power industrial PCBs | Prefer when thermal margin is critical and space constraints allow SO-8 mounting |
Compared with DMT3020UFDB-13, DMN3020LFG-7 saves no board area for dual-switch functions and AOBO2022 trades miniaturization for easier thermal management-making the DMT3020UFDB-13 optimal for space- and efficiency-critical portable designs.
Availability
DMT3020UFDB-13 is available at Aetrix Electronics and suitable for battery protection circuits, USB-C power delivery switches, LED driver current control, and IoT sensor node power gating requiring stable component supply across production volumes.
Supply support for DMT3020UFDB-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.
This device belongs to Diodes' PowerMOS™ portfolio, engineered specifically for high-efficiency, low-voltage power switching in portable and battery-operated electronics where size, thermal performance, and logic-level compatibility are essential.
FAQ
What is the maximum continuous drain current for each channel at +70°C ambient?
Each channel supports 5.2A continuous drain current at TA = +70°C when mounted on an FR-4 PCB with 1-inch square copper plate (per Note 6). This derating reflects thermal resistance RθJA = 95°C/W and maximum junction temperature of +150°C.
Does DMT3020UFDB-13 support true bidirectional current flow in battery protection?
Yes-its dual N-channel structure enables back-to-back configuration where both MOSFETs are oriented source-to-source. This provides symmetrical 30V blocking in either direction and low on-resistance conduction for charge and discharge paths in Li-ion battery packs.
Can the gate be driven directly from a 3.3V microcontroller GPIO without level shifting?
Yes-the gate threshold voltage range is 0.4V to 1.7V, and RDS(ON) is specified at 30mΩ @ 4.5V and 24mΩ @ 5V. At 3.3V, typical RDS(ON) remains below 45mΩ, enabling functional switching in non-critical efficiency applications.
What is the recommended PCB pad layout for thermal performance?
Use the manufacturer-recommended U-DFN2020-6 (Type B) pad layout with 0.65mm center pad (C), 0.45mm G1, and 1.65mm X2 dimensions. Connect the exposed D1/D2 pads to ≥100mm² internal or external copper pour using ≥6 thermal vias (0.3mm diameter, 0.6mm pitch) to inner ground planes.
DMT3020UFDB-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-UDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 30V
- Current - Continuous Drain (Id) @ 25°C:
- 6.5A (Ta)
- Rds On (Max) @ Id, Vgs:
- 21mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id:
- 1.7V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 8.8nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 383pF @ 15V
- Power - Max:
- 860mW
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- U-DFN2020-6 (Type B)
DMT3020UFDB-13 FAQ
1.How can I place an order for DMT3020UFDB-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMT3020UFDB-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMT3020UFDB-13 reliable?
The price and inventory of DMT3020UFDB-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT3020UFDB-13 is usually 5 days.
3.What payment methods are accepted for DMT3020UFDB-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT3020UFDB-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMT3020UFDB-13?
DMT3020UFDB-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMT3020UFDB-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMT3020UFDB-13?
For technical support, including DMT3020UFDB-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT3020UFDB-13 requirements.
6.How does Aetrix verify that DMT3020UFDB-13 is sourced from the original manufacturer or authorized distributors?
All DMT3020UFDB-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT3020UFDB-13 meets industry standards.
7.What is the process for return or replacement of DMT3020UFDB-13?
All DMT3020UFDB-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMT3020UFDB-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMT3020UFDB-13 part is unused and in its original packaging.
Return procedure for DMT3020UFDB-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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