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Diodes Incorporated DMT3020UFDB-7
- Part No.:
- DMT3020UFDB-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 6-UDFN Exposed Pad
- Datasheet:
-
DMT3020UFDB-7.pdf
- Description:
- MOSFET 2N-CH 30V 6.5A 6UDFN
- Quantity:
- Payment:
- Shipping:
Inventory:3,539
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Product details
Overview
DMT3020UFDB-7 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in a U-DFN2020-6 (Type B) package, rated for 30V VDSS, 21 mΩ RDS(ON) @ 10V VGS, and 6.5A continuous drain current at +25°C. It integrates ESD-protected gates, low 0.6mm profile, and operates across –55°C to +150°C junction temperature range-designed for compact, high-efficiency power-management switches in portable and space-constrained systems.
For engineers reviewing the DMT3020UFDB-7 datasheet, DMT3020UFDB-7 pinout, DMT3020UFDB-7 application, or DMT3020UFDB-7 equivalent, key selection criteria include its dual-channel layout, 4.5V logic-level gate drive compatibility, thermal resistance of 95°C/W (with copper pad), and validated performance in battery-powered load switching and USB power delivery path control.
Technical Context
This dual MOSFET uses a shared-source, independent-gate configuration with two electrically isolated N-channel channels in one ultra-thin 2.0×2.0 mm package. Each channel features a gate threshold voltage of 0.4–1.7 V and supports synchronous rectification and bidirectional load switching.
Its dynamic characteristics include 383 pF input capacitance, 8.8 nC total gate charge at 10V, and fast switching with 6 ns turn-on delay and 4 ns fall time under 15V/6A conditions-enabling high-frequency DC-DC converter and power multiplexer designs without external gate drivers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30 V - Maximum blocking voltage per channel; suitable for 24V rail and USB PD 3.0 applications. |
| RDS(ON) | 21 mΩ @ 10V VGS - Enables ≤130 mW conduction loss at 6.5A; critical for thermally constrained PCB layouts. |
| ID (max) | 6.5 A @ +25°C - Continuous current rating per channel with FR-4 board and 1-inch² copper pad; derates to 5.2A at +70°C. |
| VGS(TH) | 0.4–1.7 V - Low threshold enables direct interfacing with 1.8V/3.3V microcontrollers without level-shifting. |
| RθJA | 95 °C/W - Thermal resistance with enhanced copper pad; allows ~1.3W power dissipation before reaching 150°C junction limit. |
| Ciss | 383 pF - Input capacitance determines gate drive strength requirement; compatible with standard logic-level drivers. |
| Qg | 8.8 nC @ 10V - Total gate charge defines switching energy; supports >1 MHz operation with <1 W driver loss. |
Pinout & Package
Package: U-DFN2020-6 (Type B), 2.0 mm × 2.0 mm × 0.6 mm, lead-free NiPdAu-plated terminals, moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (D1) | Drain of Channel 1 | High-side or low-side switch node; connects to load or supply rail depending on topology. |
| Pin 2 (S1) | Source of Channel 1 | Common source node for Channel 1; tied to ground or shared return path in dual-switch configurations. |
| Pin 3 (G1) | Gate of Channel 1 | Logic-controlled input; requires no external pull-down due to integrated ESD protection diode. |
| Pin 4 (G2) | Gate of Channel 2 | Independent gate input; enables asynchronous or complementary control of second channel. |
| Pin 5 (S2) | Source of Channel 2 | Separate source terminal-allows floating or independently referenced operation of Channel 2. |
| Pin 6 (D2) | Drain of Channel 2 | Second switch node; supports dual-load isolation or redundant power path design. |
Key Features
| Feature | Design Value |
|---|---|
| 0.6 mm profile | Enables use in ultra-thin consumer devices (e.g., wearables, TWS earbuds) where Z-height is constrained to <1.0 mm. |
| ESD-protected gate | HBM rating ≥2 kV per channel-reduces need for external TVS or RC snubbers during board handling and assembly. |
| Low RDS(ON) @ 4.5V | 30 mΩ at 4.5V VGS ensures full enhancement with 5V microcontroller I/O, eliminating gate driver ICs in many designs. |
| Green, halogen-free construction | Meets RoHS 3 (2015/863/EU) and IEC 61249-2-21; bromine + chlorine <1500 ppm, antimony <1000 ppm-compliant for automotive and medical end equipment. |
Applications
| Battery Protection Circuit | USB-C Power Path Control |
|---|---|
|
Use Scenario: Dual-MOSFET configuration isolates battery from system during overvoltage, overcurrent, or thermal fault events. IC Role / Device Role / Timing Role: Acts as back-to-back N-channel switch pair enabling bidirectional current blocking without body diode conduction. Use Value: Eliminates need for discrete P-channel or complex charge-pump circuitry while maintaining <21 mΩ on-resistance per path. |
Use Scenario: Controls power direction between USB-C port and internal battery or system rail in portable power banks. IC Role / Device Role / Timing Role: Functions as load switch for VBUS path management, supporting USB PD 3.0 programmable power supply negotiation. Use Value: Supports fast 100 μs switching response and <1.2 V diode forward drop in reverse conduction mode for efficient dead-battery charging. |
| Smartphone Load Switching | IoT Sensor Node Power Gating |
|
Use Scenario: Independently powers/disconnects camera module, display backlight, or RF transceiver to reduce standby leakage. IC Role / Device Role / Timing Role: Provides two independent, logic-level-controlled power rails with minimal footprint and thermal overhead. Use Value: Achieves <1 μA off-state leakage per channel and 6.5A peak capability-extending battery life without sacrificing responsiveness. |
Use Scenario: Powers down environmental sensors (e.g., temperature, humidity) between measurement cycles in battery-operated edge nodes. IC Role / Device Role / Timing Role: Serves as ultra-low-profile, low-RDS(ON) power gate enabling sub-μA sleep current and rapid wake-up (<100 ns). Use Value: Reduces quiescent power by >99% versus always-on regulators, extending 10-year coin-cell battery life in LPWAN deployments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN3020LFG-7 | Same U-DFN2020-6 package but single-channel; RDS(ON) = 20 mΩ @ 10V, ID = 6.7A. | Lacks dual-channel integration-requires two devices for same functionality, increasing layout area and BOM count. | Select when only one switch is needed or when channel independence is not required. |
| NTMFS4C08NT1G | SO-8 package, 30V, 3.2mΩ @ 10V, 42A; higher current, larger footprint, no integrated ESD protection. | Designed for high-power industrial DC-DC stages-not suitable for space-constrained portable applications. | Choose for high-current (>10A), non-portable systems where thermal mass and board area permit SO-8 mounting. |
Compared with DMT3020UFDB-7, DMN3020LFG-7 sacrifices integration for marginally lower RDS(ON), while NTMFS4C08NT1G trades miniaturization for raw current capacity-making DMT3020UFDB-7 uniquely suited for dual-path, footprint-sensitive, logic-level-switched power management.
Availability
DMT3020UFDB-7 is available at Aetrix Electronics and suitable for battery protection circuits, USB-C power path control, and smartphone load switching requiring stable component supply and consistent parametric performance across production lots.
Supply support for DMT3020UFDB-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and the Americas.
This device belongs to Diodes' PowerMOS™ family, engineered specifically for high-efficiency, low-footprint power switching in portable and battery-powered electronics-emphasizing low RDS(ON), logic-level gate drive, and robust thermal performance in miniature packages.
FAQ
What is the maximum operating junction temperature for DMT3020UFDB-7?
The absolute maximum junction temperature is +150°C, verified per JEDEC JESD22-A104. Derating begins at +70°C ambient when mounted on a 1-inch² copper pad (RθJA = 95°C/W); sustained operation above +125°C requires thermal simulation and board-level heatsinking validation.
Does DMT3020UFDB-7 require external gate resistors for typical switching applications?
No external gate resistor is required for ≤500 kHz operation with standard logic drivers (e.g., STM32 GPIO, TI TPS6598x). The device's 1.5 Ω intrinsic gate resistance and 8.8 nC Qg allow clean 10V switching edges without ringing-though a 5–10 Ω series resistor is recommended for EMI suppression in high-noise environments.
Can DMT3020UFDB-7 be used in reverse conduction (source-to-drain) mode?
Yes-the integrated body diodes support reverse conduction up to 1.7A steady-state (IS) with VSD = 0.8–1.2V at 2A. This enables use in bidirectional power paths such as USB-C dead-battery charging, provided thermal limits are observed and reverse recovery time (not specified) is acceptable for the application frequency.
Is DMT3020UFDB-7 qualified for automotive applications?
DMT3020UFDB-7 is not AEC-Q101 qualified. Diodes offers automotive-grade variants (e.g., DMT3020UFDBQ-7) with PPAP documentation, IATF 16949 manufacturing, and extended temperature screening-contact Diodes' automotive team directly for qualification status and change control requirements.
DMT3020UFDB-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-UDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 30V
- Current - Continuous Drain (Id) @ 25°C:
- 6.5A (Ta)
- Rds On (Max) @ Id, Vgs:
- 21mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id:
- 1.7V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 8.8nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 383pF @ 15V
- Power - Max:
- 860mW
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- U-DFN2020-6 (Type B)
DMT3020UFDB-7 FAQ
1.How can I place an order for DMT3020UFDB-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMT3020UFDB-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMT3020UFDB-7 reliable?
The price and inventory of DMT3020UFDB-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT3020UFDB-7 is usually 5 days.
3.What payment methods are accepted for DMT3020UFDB-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT3020UFDB-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMT3020UFDB-7?
DMT3020UFDB-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMT3020UFDB-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMT3020UFDB-7?
For technical support, including DMT3020UFDB-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT3020UFDB-7 requirements.
6.How does Aetrix verify that DMT3020UFDB-7 is sourced from the original manufacturer or authorized distributors?
All DMT3020UFDB-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT3020UFDB-7 meets industry standards.
7.What is the process for return or replacement of DMT3020UFDB-7?
All DMT3020UFDB-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMT3020UFDB-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMT3020UFDB-7 part is unused and in its original packaging.
Return procedure for DMT3020UFDB-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DMT3020UFDB-7 Tags
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