Diodes Incorporated DMT3022UEV-13

Overview

DMT3022UEV-13 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in PowerDI®3333-8 (UXD) package, rated for 30V V_DSS, 22 mΩ R_DS(on) @ V_GS = 10V, 17A continuous drain current at T_C = +25°C, and featuring integrated ESD protection. It serves as a high-efficiency power switch in compact DC-DC converters and load-switching circuits.

For engineers reviewing the DMT3022UEV-13 datasheet, DMT3022UEV-13 pinout, DMT3022UEV-13 application, or DMT3022UEV-13 equivalent, key selection criteria include its ultra-low gate threshold (0.5–1.8 V), low input capacitance (903 pF), fast switching (t_D(ON) = 3.8 ns), dual-channel layout, and thermal resistance of 12 °C/W junction-to-case - critical for thermally constrained PCB layouts.

Technical Context

This device integrates two identical N-channel MOSFETs with shared source terminals (S1/S2) and independent gates (G1, G2) and drains (D1, D2), enabling synchronous rectification or dual-load control in space-constrained topologies. Its gate threshold voltage range (0.5–1.8 V) supports direct drive from 3.3 V and 5 V logic without level-shifting.

The PowerDI3333-8 package provides low thermal resistance (R_θJC = 12 °C/W) and high power density, with a 0.072 g mass and UL 94V-0 molding compound. The internal ESD protection diodes on both gates eliminate need for external TVS components in moderate-noise environments.

Key Specifications

Pinout & Package

Package: PowerDI®3333-8 (Type UXD), surface-mount, thermally enhanced plastic case with exposed drain pads. Dimensions: 3.30 × 3.30 × 0.80 mm, weight 0.072 g, UL 94V-0 rated.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel MOSFET applications.

Compared with DMN3022LSD-13 and SI6926ADQ-T1-GE3, DMT3022UEV-13 delivers superior thermal performance per mm², lowest gate charge among 30 V dual-N MOSFETs in PowerDI3333-8, and built-in ESD robustness - making it optimal for space- and noise-sensitive embedded power switches.

Availability

DMT3022UEV-13 is available at Aetrix Electronics and suitable for USB-C power delivery modules, industrial PLC output stages, and automotive body control units requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for DMT3022UEV-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in China, Malaysia, and Taiwan.

This part belongs to Diodes' PowerMOS™ family, engineered specifically for high-efficiency, high-density DC-DC conversion and load switching in consumer, industrial, and automotive applications where thermal performance and gate-drive simplicity are critical.

FAQ

What is the maximum continuous drain current for DMT3022UEV-13 at 70°C case temperature?

The datasheet specifies 14 A continuous drain current at T_C = +70°C with V_GS = 10 V. This derating reflects thermal limits of the PowerDI3333-8 package under realistic board-level cooling conditions, not silicon capability alone.

Can DMT3022UEV-13 be used in a synchronous buck converter as both high-side and low-side switches?

No - DMT3022UEV-13 contains two N-channel MOSFETs with a common source (S1/S2), making it unsuitable as a high-side switch without external level-shifting. It is optimized for low-side or dual low-side configurations, such as dual-output converters or parallel load switching.

Is the exposed thermal pad electrically connected to any internal node?

Yes - the exposed pad is internally connected to the drain terminals (D1 and D2). It must be soldered to a PCB copper pour tied to the drain net to achieve specified R_θJC = 12 °C/W and avoid thermal runaway under sustained load.

Does DMT3022UEV-13 require external gate resistors for EMI control in 500 kHz switching applications?

Yes - although its low Q_G (13.9 nC) enables fast switching, a 5–10 Ω series gate resistor is recommended to damp ringing caused by trace inductance and minimize radiated emissions in 500 kHz–1 MHz SMPS designs, per Diodes' application note AN-7001.