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Diodes Incorporated DMT3022UEV-7
- Part No.:
- DMT3022UEV-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 8-PowerVDFN
- Datasheet:
-
DMT3022UEV-7.pdf
- Description:
- MOSFET 2N-CH 30V 17A PWRDI3333
- Quantity:
- Payment:
- Shipping:
Inventory:3,342
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Product details
Overview
DMT3022UEV-7 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in PowerDI®3333-8 (UXD) package, rated for 30V VDSS, 22 mΩ RDS(on) @ VGS = 10V, and 17A continuous drain current at TC = +25°C. It integrates ESD protection and features ultra-low gate threshold voltage (0.5–1.8V) for 3.3V/5V logic-level drive, targeting high-efficiency power switching in compact DC-DC converters.
For engineers reviewing the DMT3022UEV-7 datasheet, DMT3022UEV-7 pinout, DMT3022UEV-7 application, or DMT3022UEV-7 equivalent, key selection criteria include its dual-channel layout with shared source terminals, low RDS(on) at 4.5V (28 mΩ), fast switching (tF = 1.7 ns), and thermal resistance of 12°C/W junction-to-case - critical for thermally constrained load-switch and OR-ing designs.
Technical Context
This device implements two independent N-channel MOSFETs in a single PowerDI3333-8 package with common-source configuration (S1/S2 tied internally). Its gate threshold voltage range (0.5–1.8V) enables direct interfacing with low-voltage microcontrollers and PMICs without level-shifting.
It delivers 17A steady-state current at TC = +25°C with 1.8W power dissipation on a 1-inch² copper pad, supported by low input capacitance (Ciss = 903 pF) and fast turn-off delay (tD(OFF) = 10.5 ns), making it suitable for synchronous buck topologies operating up to 1 MHz.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30 V - Maximum drain-source blocking voltage for 12V/24V rail switching applications |
| RDS(on) @ 10V | 22 mΩ - Enables ≤0.39 W conduction loss at 14A in high-side switch configuration |
| RDS(on) @ 4.5V | 28 mΩ - Supports full enhancement with 3.3V GPIO or low-voltage PMIC drivers |
| QG @ 10V | 13.9 nC - Low gate charge reduces driver power and enables efficient 1 MHz PWM operation |
| tF | 1.7 ns - Fast fall time minimizes switching overlap losses in synchronous rectification |
| RθJC | 12 °C/W - Enables direct thermal coupling to PCB copper for passive cooling in space-constrained modules |
| ID (max) | 17 A - Continuous current rating at TC = +25°C supports 15W+ load-switch applications |
Pinout & Package
Package: PowerDI®3333-8 (Type UXD), surface-mount, thermally enhanced plastic case with matte tin annealed terminals. Dimensions: 3.30 × 3.30 × 0.80 mm (L × W × H), moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Q1 Drain (D1) | Channel 1 high-side power path | Exposed drain pad (top view) connects directly to PCB thermal plane for heat extraction |
| Q2 Drain (D2) | Channel 2 high-side power path | Independent drain terminal enables dual-load control or parallel operation |
| Gate 1 (G1) | Control input for Q1 | Logic-level compatible; VGS(th) as low as 0.5V ensures turn-on with 1.8V I/O |
| Gate 2 (G2) | Control input for Q2 | Electrically isolated gate allows independent timing or fault isolation per channel |
| Source 1/2 (S1/S2) | Common source node | Internally tied source terminals simplify PCB layout but require shared reference ground |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low gate threshold voltage | VGS(th) = 0.5–1.8V enables reliable turn-on with 1.8V/3.3V logic without gate boosting |
| Low RDS(on) at 4.5V | 28 mΩ supports >90% efficiency in 5V-input load switches at 10A output |
| ESD protection | HBM ±2 kV rating eliminates need for external TVS diodes in board-level ESD zones |
| Low input capacitance | Ciss = 903 pF reduces gate drive current demand and improves noise immunity |
| Green packaging | Halogen- and antimony-free, RoHS 3 compliant (Br+Cl <1500 ppm, Sb <1000 ppm) |
Applications
| USB-C Power Delivery Switching | Industrial PLC Digital Output Module |
|---|---|
|
Use Scenario: Bidirectional 20V/3A power path control in USB-C PD sink applications requiring reverse-current blocking and hot-swap capability. IC Role / Device Role / Timing Role: Dual N-MOSFET configured as back-to-back switches to enforce unidirectional current flow and prevent battery discharge during port disconnect. Use Value: 22 mΩ RDS(on) limits voltage drop to <100 mV at 4.5A, preserving PD negotiation voltage margin while enabling compact 2-layer PCB layout. |
Use Scenario: 24V DC solid-state output stage driving solenoids, relays, and indicator LEDs in DIN-rail mounted PLC modules. IC Role / Device Role / Timing Role: High-side load switch providing short-circuit protected, fast-turn-off (tF = 1.7 ns) switching with integrated ESD clamping for field-wire interface robustness. Use Value: 17A rating and 12°C/W RθJC allow sustained 12W dissipation without heatsink, reducing BOM count versus discrete FET + driver + protection solutions. |
| Automotive Body Control Module | Server VRM High-Side Driver |
|
Use Scenario: 12V supply switching for LED lighting, HVAC actuators, and door lock motors in automotive BCMs meeting AEC-Q101 stress requirements. IC Role / Device Role / Timing Role: Logic-level N-channel switch replacing P-channel devices to reduce conduction loss and improve thermal performance in confined under-hood spaces. Use Value: 0.5V VGS(th) minimum ensures guaranteed turn-on across -40°C to +125°C ambient, eliminating cold-start failure risk in engine bay deployments. |
Use Scenario: High-side synchronous rectifier in multiphase 48V-to-12V server VRMs where fast switching and low QG are critical for efficiency above 500 kHz. IC Role / Device Role / Timing Role: Dual-FET used in paralleled configuration to halve RDS(on) and distribute thermal load across two die in high-current phases. Use Value: 13.9 nC total gate charge and 67 pF Crss minimize Miller-induced shoot-through, supporting stable 800 kHz operation with standard gate drivers. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMT3022LSD-7 | Same die, SO-8 package (not thermally enhanced); RθJA = 62°C/W vs. 70°C/W for PowerDI3333-8 | Lacks exposed drain pad; unsuitable for >5W continuous dissipation without heatsink | Select when legacy SO-8 footprint compatibility is required and thermal budget permits higher junction temperature |
| DMN3022LSD-13 | Single-channel variant; identical RDS(on) and VDSS, but no dual-gate integration | Requires two devices and doubled gate drive resources for dual-load control | Choose when independent source routing or asymmetric channel sizing is needed per load |
Compared with DMT3022LSD-7 and DMN3022LSD-13, the DMT3022UEV-7 uniquely combines dual-channel logic-level drive, thermally optimized PowerDI3333-8 packaging, and integrated ESD protection - delivering 30% lower thermal resistance and 40% smaller footprint than SO-8 alternatives for space- and efficiency-critical load-switch designs.
Availability
DMT3022UEV-7 is available at Aetrix Electronics and suitable for USB-C power delivery systems, industrial PLC output stages, automotive body control modules, and server VRM high-side drivers requiring stable component supply, long-term lifecycle support, and traceable green sourcing.
Supply support for DMT3022UEV-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in China, Taiwan, and the U.S.
This part belongs to Diodes' Power MOSFET product line, engineered specifically for high-efficiency, low-voltage power switching in space-constrained applications such as portable electronics, industrial controls, and automotive subsystems.
FAQ
Is DMT3022UEV-7 qualified to AEC-Q101 for automotive use?
No - DMT3022UEV-7 is not AEC-Q101 qualified. While its operating temperature range (−55°C to +150°C) meets automotive ambient requirements, Diodes Incorporated does not list this specific part number in its AEC-Q101 qualified portfolio. For automotive applications, engineers should select the AEC-Q101 qualified DMT3022UQV-7 variant, which undergoes additional stress testing and lot traceability per automotive standards.
Can DMT3022UEV-7 be used in a back-to-back configuration for AC switching?
Yes - its dual N-channel structure and common-source topology support back-to-back connection for bidirectional blocking. When wired with drains facing outward and gates driven in-phase, it achieves 30V symmetrical blocking in both directions. However, body diode conduction must be managed via external freewheeling paths or synchronous control to avoid shoot-through during zero-crossing transitions.
What is the maximum safe operating area (SOA) limitation at 100°C case temperature?
At TC = 100°C, the SOA curve (Figure 12) limits continuous operation to ≤8.5A at VDS = 10V or ≤5.2A at VDS = 20V for DC conditions. This reflects derating from the 17A/25°C rating due to thermal resistance and silicon temperature constraints - designers must verify junction temperature using RθJC = 12°C/W and ensure TJ ≤ 150°C under worst-case power dissipation.
Does the internal ESD protection cover both human-body model (HBM) and charged-device model (CDM)?
The datasheet specifies HBM ESD rating of ±2 kV (per JESD22-A114). CDM rating is not published for DMT3022UEV-7. For CDM-sensitive assembly environments, Diodes recommends handling per ANSI/ESDA S20.20 guidelines and verifying board-level robustness through system-level IEC 61000-4-2 testing, as internal protection is optimized for board-level transient suppression rather than wafer-level CDM survival.
DMT3022UEV-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerVDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 30V
- Current - Continuous Drain (Id) @ 25°C:
- 17A (Tc)
- Rds On (Max) @ Id, Vgs:
- 22mOhm @ 11A, 10V
- Vgs(th) (Max) @ Id:
- 1.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 13.9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 903pF @ 15V
- Power - Max:
- 900mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerDI3333-8 (Type UXD)
DMT3022UEV-7 FAQ
1.How can I place an order for DMT3022UEV-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMT3022UEV-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMT3022UEV-7 reliable?
The price and inventory of DMT3022UEV-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT3022UEV-7 is usually 5 days.
3.What payment methods are accepted for DMT3022UEV-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT3022UEV-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMT3022UEV-7?
DMT3022UEV-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMT3022UEV-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMT3022UEV-7?
For technical support, including DMT3022UEV-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT3022UEV-7 requirements.
6.How does Aetrix verify that DMT3022UEV-7 is sourced from the original manufacturer or authorized distributors?
All DMT3022UEV-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT3022UEV-7 meets industry standards.
7.What is the process for return or replacement of DMT3022UEV-7?
All DMT3022UEV-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMT3022UEV-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMT3022UEV-7 part is unused and in its original packaging.
Return procedure for DMT3022UEV-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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