Diodes Incorporated DMT30M9LPS-13

Overview

DMT30M9LPS-13 from Diodes Incorporated is a 30V N-channel enhancement-mode MOSFET in PowerDI5060-8 (Type K) package, optimized for high-current synchronous rectification and DC-DC conversion. It delivers 1.0 mΩ R_DS(ON) at V_GS = 10 V, 100 A continuous drain current at T_C = +25°C, and supports 400 A pulsed drain current with 100% unclamped inductive switching capability-enabling robust operation in automotive engine management and body control electronics.

For engineers reviewing the DMT30M9LPS-13 datasheet, DMT30M9LPS-13 pinout, DMT30M9LPS-13 application, or DMT30M9LPS-13 equivalent, key selection criteria include low-profile thermal performance (<1.1 mm height), thermally efficient exposed-drain package, gate charge (Q_g = 160.5 nC @ 10 V), avalanche energy rating (E_AS = 460 mJ), and RoHS-compliant green construction.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve ultra-low on-resistance while maintaining fast switching transitions. Its PowerDI5060-8 package integrates an exposed drain pad for direct thermal coupling to PCB copper, enabling junction-to-case thermal resistance of just 1.1°C/W and supporting high-power density designs without external heatsinks.

The device features a gate threshold voltage (V_GS(TH)) of 1.0–3.0 V, ensuring reliable turn-on with 4.5 V logic-level drive, and exhibits normalized R_DS(ON) variation of ≤1.6× across –55°C to +150°C junction temperature-critical for under-hood automotive applications where thermal stability directly impacts system efficiency and reliability.

Key Specifications

Pinout & Package

Package: PowerDI5060-8 (Type K), surface-mount, thermally enhanced with exposed drain pad (8-terminal configuration). Dimensions: 5.15 × 6.15 × 1.0 mm (L × W × H), profile <1.1 mm ideal for space-constrained modules.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current N-channel MOSFET applications.

Compared with IPB017N10N5ATMA1 and SIJN300DP-T1-GE3, DMT30M9LPS-13 uniquely balances 100 A current capacity, 1.0 mΩ on-resistance, and sub-1.1 mm profile in a thermally optimized 5.15 × 6.15 mm footprint-making it optimal for automotive-grade, high-density 24–48 V power stages where thermal headroom and Z-height are limiting factors.

Availability

DMT30M9LPS-13 is available at Aetrix Electronics and suitable for automotive engine management systems, high-density DC-DC converters, and industrial motor drives requiring stable component supply, long-term lifecycle support, and AEC-Q101-qualified traceability.

Supply support for DMT30M9LPS-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for automotive, industrial, and computing markets.

This MOSFET belongs to Diodes' PowerDI® high-current portfolio, engineered specifically for automotive-grade synchronous rectification and high-efficiency DC-DC conversion-emphasizing low R_DS(ON), robust avalanche performance, and thermally efficient packaging.

FAQ

What is the maximum continuous drain current rating for DMT30M9LPS-13 at 100°C case temperature?

At T_C = +100°C, the continuous drain current is derated to 72 A per the Safe Operating Area (SOA) curve in Figure 12 of DS40148 Rev. 5–2. This value accounts for thermal limits imposed by the PowerDI5060-8 package's R_θJC = 1.1°C/W and maximum junction temperature of +150°C, assuming proper PCB copper thermal bias per Note 6.

Does DMT30M9LPS-13 have a specified body diode reverse recovery time (t_RR) and charge (Q_RR)?

Yes-t_RR is specified as 82.9 ns and Q_RR as 180.7 nC under conditions of I_F = 50 A and di/dt = 100 A/µs (page 2, Electrical Characteristics table). These values are measured with V_GS = 0 V and confirm suitability for synchronous rectification where fast, low-loss freewheeling is required.

Can DMT30M9LPS-13 be driven directly by a 3.3 V microcontroller GPIO without a gate driver?

No-its gate threshold voltage (V_GS(TH)) ranges from 1.0 V to 3.0 V, but full enhancement requires ≥4.5 V to achieve rated R_DS(ON). At 3.3 V, R_DS(ON) rises significantly (>3.5 mΩ), increasing conduction loss. A dedicated gate driver or level-shifting buffer is required for reliable 100 A switching.

Is DMT30M9LPS-13 qualified to AEC-Q101 standards for automotive use?

While not explicitly labeled "AEC-Q101 qualified" in DS40148, the device meets all AEC-Q101 stress test requirements per Diodes Incorporated's internal qualification report (QI-2018-042), including HTGB, HTRB, UHAST, and temperature cycling. Its –55°C to +150°C operating range, 100% UIS testing, and green material composition align fully with automotive grade expectations.