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Diodes Incorporated DMT31M6LPS-13

Part No.:
DMT31M6LPS-13
Manufacturer:
Diodes Incorporated
Category:
FETs, MOSFETs
Package:
8-PowerTDFN
Datasheet:
AetrixDMT31M6LPS-13.pdf
Description:
MOSFET N-CH 30V 35.8A PWRDI5060
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,445

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Product details

Overview

DMT31M6LPS from Diodes Incorporated is an N-channel enhancement-mode power MOSFET in PowerDI®5060-8 (Type K) package, rated for 30V VDSS, 1.35mΩ RDS(ON) @ VGS = 10V, and 150A ID at TC = +25°C. It serves as a high-current synchronous rectifier or main switch in DC-DC converters for server VRMs and GPU power stages.

For engineers reviewing the DMT31M6LPS datasheet, DMT31M6LPS pinout, DMT31M6LPS application, or DMT31M6LPS equivalent, key selection criteria include its ultra-low RDS(ON) at 4.5V gate drive, 100% unclamped inductive switching rating, and thermally optimized exposed-drain PowerDI package for high-density board layouts.

Technical Context

This MOSFET uses trench-gate silicon technology to achieve low Qgd × RDS(ON) figure-of-merit (FOM), enabling fast switching with minimal conduction loss. Its gate threshold voltage (1–3V) supports both 5V and 3.3V logic-level drive, and the integrated body diode exhibits 37.2ns reverse recovery time at 500A/μs dI/dt.

The device is characterized for operation from –55°C to +150°C junction temperature, with RθJC = 1.2°C/W enabling direct thermal coupling to PCB copper or heatsinks. Its SOA curve supports single-pulse operation up to 160A with 10μs pulse width under VDS = 15V conditions.

Key Specifications

ParameterValue and Actual Design Meaning
VDSS30V - Maximum drain-source blocking voltage before avalanche onset
RDS(ON)1.35mΩ @ VGS = 10V - Enables <1.5W conduction loss at 100A continuous current
ID (TC = 25°C)150A - Continuous drain current rating when mounted on infinite heatsink
Qg123nC @ VGS = 10V - Total gate charge determining driver strength requirement
RθJC1.2°C/W - Junction-to-case thermal resistance enabling efficient heat transfer via exposed drain pad
EAS325mJ - Avalanche energy rating confirming robustness in inductive switching applications
tRR37.2ns - Body diode reverse recovery time supporting high-frequency synchronous rectification

Pinout & Package

Package: PowerDI®5060-8 (Type K), surface-mount, thermally enhanced with exposed drain pad. Molded green compound, UL 94V-0 rated, moisture sensitivity level 1.

Pin/TerminalCircuit RoleDesign Meaning
1, 2, 3, 4, 5, 6, 7, 8 (Drain pads)Drain (D)Eight parallel drain terminals connected to large exposed copper pad - primary thermal and current path
Pin 1 (top-left corner marker)Source (S)Left-side source terminal - used for gate drive reference and low-side sensing
Pin 2 (adjacent to Pin 1)Gate (G)Single gate input - requires <123nC charge for full enhancement; low Rg = 0.94Ω aids switching speed
Remaining S pins (3–8 on left side)Source (S)Additional source connections - reduce source inductance and improve current sharing in paralleled configurations

Key Features

FeatureDesign Value
Ultra-low RDS(ON) at 4.5V2.4mΩ - enables use with 3.3V or 5V PWM controllers without gate boosting
100% UIS-rated25.5A IAS, 325mJ EAS - guarantees safe operation during inductive turn-off transients in buck converters
Thermally optimized packageRθJC = 1.2°C/W - allows >100W power dissipation with minimal ΔT across junction-to-pad interface
Green, RoHS-compliant constructionHalogen- and antimony-free (<900ppm Br/Cl, <1000ppm Sb) - meets automotive and industrial environmental compliance mandates
Low Qgd × RDS(ON) FOMQgd = 24.5nC, RDS(ON) = 1.35mΩ - reduces switching loss and improves efficiency in 500kHz+ DC-DC stages

Applications

Server VRM Power StageGPU Core Voltage Regulator

Use Scenario: High-current, multi-phase buck converter supplying CPU core voltage (0.8–1.2V) at up to 600A peak.

IC Role / Device Role / Timing Role: Main synchronous rectifier switch in each phase leg, operating at 300–600kHz with precise dead-time control.

Use Value: 1.35mΩ RDS(ON) limits conduction loss to <0.8W per phase at 100A, directly improving VRM efficiency and reducing heatsink size.

Use Scenario: Point-of-load regulator delivering dynamic GPU core voltage (0.6–1.1V) with rapid load transient response.

IC Role / Device Role / Timing Role: Low-side switch in dual-MOSFET half-bridge topology, driven by dedicated gate controller with adaptive dead-time.

Use Value: 37.2ns tRR minimizes body-diode conduction loss during shoot-through prevention, preserving efficiency at 1MHz switching.

Industrial DC-DC ModuleAutomotive ADAS Power Supply

Use Scenario: Isolated 48V-to-12V intermediate bus converter in factory automation PLCs.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in LLC or phase-shifted full-bridge topology.

Use Value: 150A ID rating supports >1kW output power density; exposed drain pad enables direct thermal mounting to chassis ground plane.

Use Scenario: 12V-to-5V/3.3V power supply for radar ECU or camera module in AEC-Q101 qualified systems.

IC Role / Device Role / Timing Role: Primary high-efficiency buck switch in pre-regulator stage feeding downstream PMICs.

Use Value: –55°C to +150°C operating range and 100% UIS rating ensure reliability under automotive thermal cycling and load dump conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
DMTH3010LPS-1330V VDSS, 1.1mΩ RDS(ON) @ 10V, but only rated for 120A ID at TC = 25°CLower current handling limits use in >130A phases; identical PowerDI5060-8 footprintSelect when lower RDS(ON) is prioritized over peak current capability
IPB017N10N5ATMA1100V VDSS, 1.7mΩ RDS(ON), TO-263-7 package, RθJC = 0.7°C/WHigher voltage rating sacrifices conduction efficiency at 30V; larger footprint and different thermal interfaceChoose only if system requires 60V+ blocking margin or existing TO-263 layout reuse

Compared with DMTH3010LPS-13, DMT31M6LPS delivers +25% higher continuous current capacity while maintaining sub-1.4mΩ on-resistance; versus IPB017N10N5ATMA1, it trades voltage headroom for 30% lower RDS(ON) and 20% smaller board area in 30V applications.

Availability

DMT31M6LPS is available at Aetrix Electronics and suitable for server VRMs, GPU power supplies, industrial DC-DC modules, and automotive ADAS power systems requiring stable component supply and long-term production continuity.

Supply support for DMT31M6LPS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

This device belongs to Diodes' PowerDI® high-current MOSFET product line, engineered specifically for high-efficiency, high-density DC-DC conversion in computing, industrial, and automotive power systems.

FAQ

What is the maximum allowable gate-source voltage for DMT31M6LPS?

The absolute maximum VGS rating is ±20V. Operation beyond this risks irreversible gate oxide damage. Recommended gate drive is 4.5V to 10V for optimal RDS(ON) and switching loss trade-off; 12V drive is permissible but offers diminishing returns above 10V due to gate charge saturation.

Can DMT31M6LPS be used in parallel configurations?

Yes - its low RDS(ON) tolerance (typical 1.1mΩ, max 1.35mΩ) and matched thermal coefficient support current sharing. Use Kelvin source connections and symmetrical PCB layout with equal-length gate traces; derate total current by 15% for thermal imbalance in 4+ device arrays.

Does DMT31M6LPS meet AEC-Q101 requirements for automotive use?

No - the DMT31M6LPS is not AEC-Q101 qualified. Diodes offers automotive-grade variants (e.g., DMT31M6LPSQ-13) with PPAP documentation, IATF 16949 manufacturing, and extended temperature screening; consult Diodes' automotive product definitions page for qualification status.

What is the recommended PCB pad layout for thermal performance?

Use the official PowerDI5060-8 (Type K) pad layout from Diodes' package outline document: 4.9mm × 5.8mm exposed drain pad with ≥8 thermal vias (0.3mm diameter, 0.8mm pitch) connecting to inner-layer copper planes. Minimum 2oz copper on top/bottom layers and 1-inch² thermal pad on secondary layer required to achieve RθJA ≤ 50°C/W.

DMT31M6LPS-13 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
8-PowerTDFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
35.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
1.35mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
123 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
7019 pF @ 15 V
FET Feature:
-
Power Dissipation (Max):
2.5W (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
PowerDI5060-8 (Type K)

DMT31M6LPS-13 FAQ

1.How can I place an order for DMT31M6LPS-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMT31M6LPS-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMT31M6LPS-13 reliable?

The price and inventory of DMT31M6LPS-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT31M6LPS-13 is usually 5 days.

3.What payment methods are accepted for DMT31M6LPS-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT31M6LPS-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMT31M6LPS-13?

DMT31M6LPS-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMT31M6LPS-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMT31M6LPS-13?

For technical support, including DMT31M6LPS-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT31M6LPS-13 requirements.

6.How does Aetrix verify that DMT31M6LPS-13 is sourced from the original manufacturer or authorized distributors?

All DMT31M6LPS-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT31M6LPS-13 meets industry standards.

7.What is the process for return or replacement of DMT31M6LPS-13?

All DMT31M6LPS-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMT31M6LPS-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMT31M6LPS-13 part is unused and in its original packaging.

Return procedure for DMT31M6LPS-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMT31M6LPS-13 Tags

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