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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMT31M7LPS-13

Name: DMT31M7LPS-13
Brand: Diodes Incorporated
SKU: DMT31M7LPS-13
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMT31M7LPS-13

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: DMT31M7LPS-13.pdf

Description:: MOSFET N-CH 30V 30A PWRDI5060

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Product details

Overview

DMT31M7LPS-13 from Diodes Incorporated is an N-channel enhancement-mode MOSFET in PowerDI5060-8 package, rated for 30V V_DSS, 1.7mΩ R_DS(ON) @ 10V V_GS, and 100A I_D at T_C = +25°C. It delivers ultra-low conduction loss and high-current capability for synchronous rectification in high-density DC-DC converters.

For engineers reviewing the DMT31M7LPS-13 datasheet, DMT31M7LPS-13 pinout, DMT31M7LPS-13 application, or DMT31M7LPS-13 equivalent, key selection criteria include R_DS(ON) at 4.5V (2.4mΩ), Q_gd × R_DS(ON) figure-of-merit, thermal resistance R_θJC = 1.1°C/W, and 100% unclamped inductive switching rating.

Technical Context

This MOSFET employs advanced trench-gate silicon technology optimized for high-efficiency power conversion. Its low gate charge (Q_g = 90nC @ 10V) and minimized reverse transfer capacitance (C_rss = 424pF) enable fast switching with reduced Miller-induced turn-off delay.

The device integrates a robust body diode with t_RR = 32.5ns and Q_RR = 55nC under 15A/500A/μs conditions, supporting hard-switched and synchronous rectifier topologies. Thermal design is enabled by the exposed drain pad and R_θJC = 1.1°C/W path to PCB copper.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	30V - Maximum blocking voltage for 12V/24V input DC-DC stages
R_DS(ON) @ 10V	1.7mΩ - Enables <1.7W conduction loss at 100A in high-current POL converters
R_DS(ON) @ 4.5V	2.4mΩ - Supports efficient operation with 5V gate drive in controller-based designs
Q_gd	21.6nC - Low gate-drain charge minimizes switching loss and improves EMI behavior
R_θJC	1.1°C/W - Enables direct thermal coupling to heatsink or large copper pour for >100W dissipation
I_AS	65A - Rated avalanche current ensures ruggedness against inductive load transients
t_RR	32.5ns - Fast body diode recovery supports synchronous rectification without external Schottky

Pinout & Package

Package: PowerDI5060-8 - thermally enhanced 8-pin surface-mount package with exposed drain pad for low-junction-to-case thermal resistance (R_θJC = 1.1°C/W). Molded green compound, RoHS-compliant matte tin finish on copper leadframe.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 6, 7, 8 (Drain)	Drain (common connection)	All eight pins are internally connected to the drain terminal and exposed copper pad - provides parallel current paths and low-inductance thermal interface
G (Gate)	Control electrode	Single gate terminal (Pin 1 marked with green dot); requires <3V threshold margin for reliable 4.5V logic-level drive
S (Source)	Reference node	Source terminals (Pins 2–8 are drain; source is isolated - confirmed via internal schematic and pin configuration diagram)

Key Features

Feature	Design Value
Ultra-low R_DS(ON) × Q_gd FOM	3.6 mΩ·nC - reduces combined conduction and switching loss in high-frequency buck converters
100% UIS-rated avalanche capability	65A/215mJ - eliminates need for external snubbers in inductive load switching applications
Thermally optimized PowerDI5060-8	R_θJC = 1.1°C/W - enables >100W continuous power handling with minimal board area
Body diode with controlled Q_RR	55nC @ 15A - supports zero-voltage switching (ZVS) and reduces reverse recovery loss in SR designs
Halogen- and antimony-free "Green" construction	<900ppm Br, <900ppm Cl, <1000ppm Sb - meets global environmental compliance without performance trade-offs

Applications

Server VRMs

Industrial DC-DC Modules

Use Scenario: High-current point-of-load regulation in AI accelerator cards requiring >80A per phase at 0.8V output.

IC Role / Device Role / Timing Role: Synchronous rectifier MOSFET in multiphase buck converter, switching at 500kHz–1MHz.

Use Value: 1.7mΩ R_DS(ON) limits conduction loss to <1.1W at 80A, enabling >95% efficiency at full load.

Use Scenario: Isolated 48V-to-12V intermediate bus converter in programmable logic controllers.

IC Role / Device Role / Timing Role: Primary-side switch in active clamp forward topology, operating at 200kHz with 50ns dead time.

Use Value: 21.6nC Q_gd and 424pF C_rss reduce shoot-through risk and improve duty cycle fidelity.

Automotive ADAS Power Supplies

LED Backlight Drivers

Use Scenario: 12V input power stage for radar sensor ECU with ASIL-B functional safety requirements.

IC Role / Device Role / Timing Role: High-side switch controlling 20A camera module rail with overcurrent protection.

Use Value: 65A I_AS rating ensures survivability during load dump or short-circuit events per ISO 7637-2.

Use Scenario: Boost converter driving 40-segment automotive LED backlight with PWM dimming.

IC Role / Device Role / Timing Role: Main switch in 2MHz boost stage delivering 3A at 40V output.

Use Value: 32.5ns t_RR prevents cross-conduction loss during high-frequency PWM edge transitions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFH7107TRPBF	R_DS(ON) = 1.8mΩ @ 10V; Q_g = 92nC; same PowerSO-8 package but no exposed drain pad	Higher R_θJA (55°C/W vs. 52°C/W) limits power density in compact layouts	Prefer DMT31M7LPS-13 when board space is constrained and thermal performance is critical
SISD10DN033H-T1-GE3	R_DS(ON) = 1.4mΩ @ 10V; Q_gd = 24.5nC; TSDSON-8 package with 1.2mm height	Lower R_DS(ON) but higher Q_gd increases switching loss above 300kHz	Prefer DMT31M7LPS-13 for >400kHz operation where Q_gd × R_DS(ON) FOM dominates efficiency

Compared with IRFH7107TRPBF and SISD10DN033H-T1-GE3, DMT31M7LPS-13 offers superior thermal resistance (R_θJC = 1.1°C/W) and lowest Q_gd × R_DS(ON) product (3.6 mΩ·nC), making it optimal for high-power-density, high-frequency DC-DC converters where thermal management and switching loss are co-critical.

Availability

DMT31M7LPS-13 is available at Aetrix Electronics and suitable for server VRMs, industrial DC-DC modules, and automotive ADAS power supplies requiring stable component supply across multi-year production cycles.

Supply support for DMT31M7LPS-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-performance power management, signal integrity, and protection solutions for industrial, computing, and automotive markets.

This MOSFET belongs to Diodes' PowerMOS™ portfolio, engineered specifically for high-current, high-efficiency DC-DC conversion in space-constrained applications where thermal performance and switching speed are decisive.

FAQ

What is the maximum continuous drain current at T_C = +70°C?

The DMT31M7LPS-13 supports 80A continuous drain current at case temperature +70°C with V_GS = 10V, as specified in the Absolute Maximum Ratings table. This derating from 100A at +25°C reflects thermal constraints of the PowerDI5060-8 package under real-world PCB thermal conditions.

Does this MOSFET require a gate resistor for stability in high-speed switching?

Yes - a 3Ω gate resistor is used in the datasheet's switching time test conditions (t_D(ON), t_R, etc.). This value balances switching speed against ringing and overshoot; values below 2Ω increase risk of gate oscillation due to low R_g and high C_iss (5741pF).

Is the body diode suitable for synchronous rectification without external Schottky replacement?

Yes - the body diode has t_RR = 32.5ns and Q_RR = 55nC at 15A/500A/μs, enabling use in synchronous rectifier configurations up to 1MHz. Its low V_SD (0.7V typ. at 2A) further reduces conduction loss versus discrete Schottky alternatives.

How is the PowerDI5060-8 package mounted for optimal thermal performance?

Optimal thermal performance requires soldering all eight drain pins and the exposed copper pad to a minimum 1-inch square 2oz copper thermal pad on the PCB bottom layer, per Note 6 in the datasheet. This achieves R_θJA = 52°C/W and enables 113W power dissipation at T_C = +25°C.

DMT31M7LPS-13 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 30A (Ta), 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 1.7mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 90 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5741 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 1.3W (Ta), 113W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerDI5060-8

DMT31M7LPS-13 FAQ

1.How can I place an order for DMT31M7LPS-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMT31M7LPS-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMT31M7LPS-13 reliable?

The price and inventory of DMT31M7LPS-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT31M7LPS-13 is usually 5 days.

3.What payment methods are accepted for DMT31M7LPS-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT31M7LPS-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMT31M7LPS-13?

DMT31M7LPS-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMT31M7LPS-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMT31M7LPS-13?

For technical support, including DMT31M7LPS-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT31M7LPS-13 requirements.

6.How does Aetrix verify that DMT31M7LPS-13 is sourced from the original manufacturer or authorized distributors?

All DMT31M7LPS-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT31M7LPS-13 meets industry standards.

7.What is the process for return or replacement of DMT31M7LPS-13?

All DMT31M7LPS-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMT31M7LPS-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMT31M7LPS-13 part is unused and in its original packaging.

Return procedure for DMT31M7LPS-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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