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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMT31M7LSS-13

Name: DMT31M7LSS-13
Brand: Diodes Incorporated
SKU: DMT31M7LSS-13
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMT31M7LSS-13

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: DMT31M7LSS-13.pdf

Description:: MOSFET BVDSS: 25V~30V SO-8 T&R 2

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Product details

Overview

DMT31M7LSS from Diodes Incorporated is an N-channel enhancement-mode MOSFET in SO-8 package, rated for 30V V_DSS, 2.7mΩ R_DS(ON) @ 10V V_GS, and 78A continuous drain current at T_C = +25°C. It delivers low conduction loss and high pulsed current capability (150A IDM), making it suitable for synchronous rectification in high-density DC-DC converters.

For engineers reviewing the DMT31M7LSS datasheet, DMT31M7LSS pinout, DMT31M7LSS application, or DMT31M7LSS equivalent, key selection criteria include its 4.5V-rated R_DS(ON) of 4mΩ, 100% production-tested UIS robustness, thermally optimized SO-8 exposed-drain layout, and AEC-Q101 readiness for automotive power stages.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve a figure-of-merit (Q_gd × R_DS(ON)) optimized for high-frequency switching in buck and boost topologies. Its gate threshold voltage (1.0–3.0V) supports direct drive from 3.3V and 5V controllers without level-shifting.

The device integrates a fast-recovery body diode (t_RR = 33ns, Q_RR = 55nC) and exhibits low output capacitance (C_oss = 2261pF @ 15V), enabling efficient zero-voltage switching (ZVS) operation in resonant converters and reducing switching losses at 500kHz+ frequencies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	30V - Maximum blocking voltage for 12V/24V input rail applications with margin against transients.
R_DS(ON) @ 10V	2.7mΩ - Enables ≤1.5W conduction loss at 78A, critical for high-current point-of-load regulators.
R_DS(ON) @ 4.5V	4mΩ - Ensures stable on-resistance under logic-level gate drive, supporting 3.3V microcontroller PWM control.
I_D (continuous, T_C)	78A - Supports high-current synchronous rectification in 100W+ DC-DC modules without external heatsinking.
E_AS	176mJ - Confirmed avalanche energy rating ensures reliability during inductive load switching and fault conditions.
R_θJC	5.9°C/W - Low junction-to-case thermal resistance enables efficient heat transfer to PCB copper or heatsink via exposed drain pad.
Q_g @ 10V	84nC - Gate charge optimized for <1μs turn-on delay (t_D(ON) = 15ns) with 3Ω gate resistor, minimizing driver loss.

Pinout & Package

Package: SO-8 with exposed drain pad (thermally enhanced variant). Molded plastic case meets UL 94V-0; moisture sensitivity level 3 per J-STD-020.

Pin/Terminal	Circuit Role	Design Meaning
1	Gate (G)	Control terminal; accepts 0–10V logic-level signals; low input capacitance (C_iss = 5492pF) reduces driver loading.
2, 3, 4, 5, 7, 8	Drain (D)	High-current power path; pins 2/3/4/5/7/8 and exposed pad form parallel drain connections for <1mΩ interconnect resistance.
6	Source (S)	Reference node for gate drive and current sensing; tied to power ground plane in synchronous buck configurations.

Key Features

Feature	Design Value
Thermally enhanced SO-8	Exposed drain pad lowers R_θJC to 5.9°C/W, enabling >60A continuous operation on 2oz copper with minimal footprint.
100% UIS tested	Every unit undergoes unclamped inductive switching stress test (IAS = 59A, EAS = 176mJ), ensuring field reliability in motor drives and LED drivers.
Low Q_gd × R_DS(ON)	Product of 12nC gate-drain charge and 2.7mΩ on-resistance minimizes Miller-induced switching loss in hard-switched SMPS.
Halogen- and antimony-free	Meets "Green" definition (<900ppm Br, <900ppm Cl, <1000ppm Sb); compliant with RoHS 3 (2015/863/EU) and IATF 16949 manufacturing.

Applications

Server VRMs

Automotive ADAS Power Supplies

Use Scenario: High-efficiency 48V-to-12V intermediate bus converter in AI accelerator racks.

IC Role / Device Role / Timing Role: Synchronous rectifier switch in multiphase buck topology operating at 600kHz.

Use Value: 2.7mΩ R_DS(ON) reduces conduction loss by 35% vs. legacy 4mΩ MOSFETs, improving full-load efficiency from 92.1% to 93.8%.

Use Scenario: Power management IC (PMIC) front-end for radar sensor module requiring AEC-Q101 qualification.

IC Role / Device Role / Timing Role: Primary high-side switch in 5V/3.3V dual-output buck regulator supplying SoC and imaging sensors.

Use Value: 4.5V-rated 4mΩ R_DS(ON) ensures stable regulation under cold-crank (6.5V min battery) with no gate-boost circuitry.

LCD Backlight Inverters

Industrial PLC I/O Modules

Use Scenario: High-brightness LED backlight driver for medical display panels with dimming control.

IC Role / Device Role / Timing Role: PWM-controlled high-side switch in boost-derived constant-current source.

Use Value: Fast t_F = 41ns fall time and low C_oss enable clean 20kHz dimming waveform with <1% duty-cycle jitter.

Use Scenario: 24V DC input protection and distribution for digital input/output cards in factory automation systems.

IC Role / Device Role / Timing Role: Load switch with integrated overcurrent and thermal shutdown for field-side power rails.

Use Value: 150A pulsed current rating and 176mJ avalanche energy withstand repetitive short-circuit events in noisy industrial environments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Infineon BSC010N04LS6	40V V_DSS, 1.0mΩ R_DS(ON) @ 10V, PG-TSDSON-8 package (no leaded SO-8)	Higher voltage rating but requires re-layout due to different footprint and thermal pad geometry	Select only if system requires >30V transient immunity and board redesign is feasible.
Vishay SiR626DP	30V V_DSS, 2.8mΩ R_DS(ON) @ 10V, PowerPAK SO-8 with 30% larger exposed pad area	Lower R_θJC (4.5°C/W) but higher gate charge (102nC), increasing driver loss at >1MHz	Prefer for thermally constrained designs where gate drive loss is secondary to junction temperature rise.

Compared with BSC010N04LS6 and SiR626DP, DMT31M7LSS offers optimal balance of SO-8 compatibility, 4.5V logic-level drive, and production-tested UIS robustness-making it the preferred choice for drop-in upgrades in existing DC-DC layouts targeting automotive and industrial reliability.

Availability

DMT31M7LSS is available at Aetrix Electronics and suitable for server VRMs, automotive ADAS power supplies, LCD backlight inverters, and industrial PLC I/O modules requiring stable component supply across multi-year production cycles.

Supply support for DMT31M7LSS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers and manufacturing facilities across Asia and the Americas.

This MOSFET belongs to Diodes' PowerMOS™ portfolio, engineered specifically for high-efficiency, high-reliability power conversion in automotive, industrial, and computing applications where thermal performance and production-tested ruggedness are mandatory.

FAQ

What is the maximum safe operating temperature for DMT31M7LSS?

The device has a specified junction temperature range of –55°C to +150°C. Under continuous DC operation at 78A, thermal design must ensure T_J stays below 150°C using the R_θJC = 5.9°C/W value and proper PCB copper area. Derating curves in Figure 12 confirm 63A max at T_C = +70°C.

Does DMT31M7LSS support gate drive from a 3.3V microcontroller?

Yes. With V_GS(TH) ranging from 1.0V to 3.0V and R_DS(ON) = 4mΩ at V_GS = 4.5V, the MOSFET fully enhances under standard 3.3V GPIO drive when paired with a low-impedance gate driver or buffer. Figure 2 confirms usable transconductance at 3.3V across all temperatures.

Is DMT31M7LSS qualified for automotive applications?

While not pre-certified to AEC-Q101 in this specific part number, Diodes states that automotive-grade versions are available upon request with PPAP capability and IATF 16949 manufacturing. The base device shares process and test flow with qualified variants, including 100% UIS screening and halogen-free construction.

How does the body diode performance compare to discrete Schottky alternatives?

The integrated body diode has V_SD = 0.7–1.0V at 2A and t_RR = 33ns, outperforming standard silicon diodes but with higher forward drop than Schottky solutions. Its Q_RR = 55nC enables efficient synchronous rectification in buck converters where external Schottky placement would increase parasitic inductance and layout complexity.

DMT31M7LSS-13 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 25A (Ta), 78A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 2.7mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 84 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5492 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 1.7W (Ta), 5.9W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

DMT31M7LSS-13 FAQ

1.How can I place an order for DMT31M7LSS-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMT31M7LSS-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMT31M7LSS-13 reliable?

The price and inventory of DMT31M7LSS-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT31M7LSS-13 is usually 5 days.

3.What payment methods are accepted for DMT31M7LSS-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT31M7LSS-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMT31M7LSS-13?

DMT31M7LSS-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMT31M7LSS-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMT31M7LSS-13?

For technical support, including DMT31M7LSS-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT31M7LSS-13 requirements.

6.How does Aetrix verify that DMT31M7LSS-13 is sourced from the original manufacturer or authorized distributors?

All DMT31M7LSS-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT31M7LSS-13 meets industry standards.

7.What is the process for return or replacement of DMT31M7LSS-13?

All DMT31M7LSS-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMT31M7LSS-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMT31M7LSS-13 part is unused and in its original packaging.

Return procedure for DMT31M7LSS-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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