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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMT32M4LFG-13

Name: DMT32M4LFG-13
Brand: Diodes Incorporated
SKU: DMT32M4LFG-13
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMT32M4LFG-13

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: 8-PowerVDFN

Datasheet:: DMT32M4LFG-13.pdf

Description:: MOSFET BVDSS: 25V~30V POWERDI333

Quantity:: RFQ Add To RFQ list

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Inventory:8,873

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Product details

Overview

DMT32M4LFG-13 from Diodes Incorporated is a 30V N-channel enhancement-mode MOSFET in PowerDI3333-8 package, delivering 1.7mΩ R_DS(ON) @ V_GS = 10V, 100A continuous drain current at T_C = +25°C, and 100% UIS avalanche rated. It serves as a high-current synchronous rectifier or main switch in DC-DC converters for notebook adapters and industrial power supplies.

For engineers reviewing the DMT32M4LFG-13 datasheet, DMT32M4LFG-13 pinout, DMT32M4LFG-13 application, or DMT32M4LFG-13 equivalent, key selection criteria include low R_DS(ON) at 4.5V gate drive, thermal resistance (R_θJC = 3.9°C/W), Q_gd × R_DS(ON) figure-of-merit, and PowerDI3333-8 board-area efficiency versus SO-8.

Technical Context

This MOSFET employs trench-gate silicon technology optimized for low conduction loss and fast switching in high-frequency synchronous buck converters. Its gate threshold voltage (V_GS(TH) = 1–3V) enables robust turn-on with standard 5V or 3.3V logic-level drivers.

The device integrates an intrinsic body diode with V_SD = 0.7–1.0V @ I_S = 2A and supports unclamped inductive switching up to I_AS = 58A and E_AS = 172mJ, enabling reliable operation in hard-switched topologies without external snubbers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	30V - Maximum blocking voltage before avalanche onset; suitable for 24V input rails with margin.
R_DS(ON) @ V_GS = 10V	1.7mΩ max - Enables ≤1.7W conduction loss at 100A; critical for high-efficiency 12V→1V VRMs.
R_DS(ON) @ V_GS = 4.5V	2.8mΩ max - Ensures low-loss operation with 5V gate drivers in cost-sensitive industrial DC-DC designs.
Q_g @ V_GS = 10V	67nC - Determines gate drive power and switching loss; paired with low R_DS(ON), yields high FOM.
R_θJC	3.9°C/W - Thermal path from junction to exposed drain pad; enables direct heatsinking in compact layouts.
I_D Continuous @ T_C = 25°C	100A - Sustained current capability when mounted on thermally enhanced PCBs with copper thermal pads.
E_AS	172mJ - Energy-handling capacity during unclamped inductive switching; eliminates need for external clamping.

Pinout & Package

Package: PowerDI3333-8 - thermally enhanced 8-pin surface-mount package with exposed drain pad; occupies 33% board area of SO-8; UL 94V-0 molded plastic; matte tin annealed terminals.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4 (S)	Source	Common source connection for parallel internal dies; low-inductance return path for high di/dt currents.
5, 6, 7, 8 (D)	Drain	Exposed copper drain pad (pins 5–8) - primary thermal interface and high-current output node.
Pin 1 (G)	Gate	Single gate input; optimized for low R_g (0.86Ω) to minimize Miller-induced oscillation risk.

Key Features

Feature	Design Value
Low R_DS(ON) @ 4.5V	2.8mΩ max ensures <1.3W conduction loss at 65A - enables 5V gate drive in telecom POL modules.
Q_gd × R_DS(ON) FOM	12.9nC × 1.7mΩ = 21.9 - benchmark figure-of-merit for high-frequency switching efficiency in 500kHz+ converters.
100% UIS rated	Validated avalanche energy of 172mJ - guarantees reliability in flyback and LLC resonant converter primary switches.
PowerDI3333-8 footprint	3.3mm × 3.3mm outline with 0.65mm pitch - enables >2× power density vs. SO-8 in space-constrained USB-C PD designs.

Applications

Laptop AC-DC Adapters

Industrial 24V DC-DC Converters

Use Scenario: Primary-side synchronous rectification in 65W–100W GaN-based adapters with 24V–30V input.

IC Role / Device Role / Timing Role: High-side synchronous rectifier replacing Schottky diodes; commutates at 200–500kHz.

Use Value: Reduces conduction loss by 65% vs. 30V/100A Schottky, lowering case temperature by 18°C at full load.

Use Scenario: Main switch in isolated 24V-to-12V/5V dual-output forward converters for PLC I/O modules.

IC Role / Device Role / Timing Role: Primary-side PWM switch operating at 250kHz with 50% duty cycle.

Use Value: Enables 95.2% peak efficiency at 20A output due to 1.7mΩ R_DS(ON) and low Q_g.

LED Backlight Drivers

Automotive Body Control Modules

Use Scenario: High-current LED string switch in automotive instrument cluster backlighting (12V input, 3A–5A per channel).

IC Role / Device Role / Timing Role: Low-side PWM dimming switch controlling 4–6 parallel LED strings.

Use Value: Delivers <0.02V dropout at 5A, eliminating thermal derating and enabling single-layer PCB layout.

Use Scenario: Load switch for 12V accessory circuits (e.g., HVAC actuators, window lift motors) in BCMs.

IC Role / Device Role / Timing Role: Protected high-side power switch with integrated avalanche ruggedness.

Use Value: Withstands 58A inductive kickback from motor windings without external TVS, reducing BOM count by one component.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMT32M4LFG-7	Same die and package; differs only in tape-and-reel quantity (2,000 vs. 3,000 units).	No functional difference; identical electrical, thermal, and mechanical specs.	Select based on production volume and reel change frequency - -13 reduces line stops in high-mix SMT lines.
DMTH3016LPS-13	30V, 1.6mΩ @ 10V, but in PowerDI5060 package (larger footprint, higher R_θJA = 62°C/W).	Better R_DS(ON) but requires 50% more board area and has lower thermal performance in confined spaces.	Prefer DMT32M4LFG-13 where board area is constrained and thermal pad access is limited.

Compared with DMT32M4LFG-7, the -13 variant offers identical performance with optimized reel logistics; versus DMTH3016LPS-13, it trades marginal R_DS(ON) reduction for 33% smaller footprint and 21% lower R_θJC, making it superior for ultra-dense power stages.

Availability

DMT32M4LFG-13 is available at Aetrix Electronics and suitable for laptop power adapters, industrial DC-DC converters, and LED backlighting systems requiring stable component supply and long-term manufacturing continuity.

Supply support for DMT32M4LFG-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and the Americas.

This MOSFET belongs to Diodes' PowerMOS™ portfolio, engineered specifically for high-efficiency, high-density power conversion in consumer, industrial, and automotive applications - emphasizing low R_DS(ON), fast switching, and rugged avalanche performance.

FAQ

What is the maximum allowable junction temperature for DMT32M4LFG-13?

The absolute maximum junction temperature is +150°C, validated across all operating conditions. Derating begins at T_J > 125°C per Figure 5 and Figure 6, where R_DS(ON) increases by ~25% from 25°C to 150°C at V_GS = 10V. Thermal design must maintain T_J ≤ 135°C for 10-year reliability in continuous operation.

Does DMT32M4LFG-13 require a gate resistor for stability?

Yes - a 3Ω to 10Ω series gate resistor is recommended to dampen ringing caused by parasitic inductance and the device's low R_g (0.86Ω). This is confirmed by the t_D(ON)/t_R test condition in the datasheet using R_G = 3Ω, and prevents shoot-through in half-bridge configurations.

Can DMT32M4LFG-13 be used in automotive applications?

DMT32M4LFG-13 is not AEC-Q101 qualified; Diodes states that automotive-grade versions require explicit qualification and PPAP documentation. For non-safety-critical 12V body electronics (e.g., interior lighting), it may be used subject to customer validation - but not for ADAS, powertrain, or safety systems.

How does the PowerDI3333-8 package improve thermal performance over SO-8?

PowerDI3333-8 reduces R_θJC to 3.9°C/W (vs. ~6–8°C/W for SO-8) via a large exposed drain pad soldered directly to PCB copper. Its 3.3mm × 3.3mm footprint also allows tighter thermal vias under the pad, achieving up to 40% lower junction-to-ambient rise at 100A compared to SO-8 with identical board layout.

DMT32M4LFG-13 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: 8-PowerVDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 30A (Ta), 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 1.7mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 67 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4366 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 1.1W

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: POWERDI3333-8

DMT32M4LFG-13 FAQ

1.How can I place an order for DMT32M4LFG-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMT32M4LFG-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMT32M4LFG-13 reliable?

The price and inventory of DMT32M4LFG-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT32M4LFG-13 is usually 5 days.

3.What payment methods are accepted for DMT32M4LFG-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT32M4LFG-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMT32M4LFG-13?

DMT32M4LFG-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMT32M4LFG-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMT32M4LFG-13?

For technical support, including DMT32M4LFG-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT32M4LFG-13 requirements.

6.How does Aetrix verify that DMT32M4LFG-13 is sourced from the original manufacturer or authorized distributors?

All DMT32M4LFG-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT32M4LFG-13 meets industry standards.

7.What is the process for return or replacement of DMT32M4LFG-13?

All DMT32M4LFG-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMT32M4LFG-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMT32M4LFG-13 part is unused and in its original packaging.

Return procedure for DMT32M4LFG-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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