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Diodes Incorporated DMT32M4LFG-7

Part No.:
DMT32M4LFG-7
Manufacturer:
Diodes Incorporated
Category:
FETs, MOSFETs
Package:
8-PowerVDFN
Datasheet:
AetrixDMT32M4LFG-7.pdf
Description:
MOSFET BVDSS: 25V~30V POWERDI333
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:9,859

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Product details

Overview

DMT32M4LFG-7 from Diodes Incorporated is a 30V N-channel enhancement-mode MOSFET in PowerDI3333-8 package, delivering 1.7mΩ RDS(ON) @ VGS = 10V, 100A continuous drain current at TC = +25°C, and 100% UIS-rated avalanche capability - deployed in high-density DC-DC converters for notebook GPU power rails.

For engineers reviewing the DMT32M4LFG-7 datasheet, DMT32M4LFG-7 pinout, DMT32M4LFG-7 application, or DMT32M4LFG-7 equivalent, key selection criteria include low RDS(ON) at 4.5V gate drive, Qgd × RDS(ON) figure-of-merit for synchronous buck efficiency, thermal resistance (RθJC = 3.9°C/W), and PowerDI3333-8 board-area footprint reduction versus SO-8.

Technical Context

This MOSFET employs trench-gate silicon technology optimized for low conduction loss and fast switching in high-frequency synchronous rectification. Its 3.9°C/W junction-to-case thermal resistance enables direct thermal coupling to PCB copper planes via the exposed drain pad.

The device features a gate threshold voltage of 1–3V, supports 4.5V logic-level drive, and delivers 2.8mΩ RDS(ON) under 4.5V bias - critical for 12V input/1V output multiphase VRMs where gate drive voltage is constrained by controller limitations.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS 30V - Maximum blocking voltage compatible with 12V input bus systems with margin for transient spikes.
RDS(ON) @ VGS = 10V 1.7mΩ - Enables <1.7W conduction loss at 100A, reducing heat sink requirements in high-current power stages.
RDS(ON) @ VGS = 4.5V 2.8mΩ - Ensures stable on-resistance under typical controller gate drive, minimizing dropout in 5V/3.3V auxiliary rails.
Qgd 12.9nC - Low gate-drain charge reduces Miller-induced switching delay and improves hard-switching efficiency.
RθJC 3.9°C/W - Allows >2.6W power dissipation at case temperature ≤100°C without external heatsink in compact layouts.
UIS Rating 100% rated - Withstands single-pulse avalanche energy of 172mJ (L = 0.1mH), eliminating need for external clamping in inductive load switching.

Pinout & Package

Package: PowerDI3333-8 - thermally enhanced 8-pin surface-mount package with exposed drain pad for direct PCB thermal conduction; occupies 33% board area of SO-8; UL 94V-0 molded compound; matte tin annealed terminals.

Pin/Terminal Circuit Role Design Meaning
1, 2, 3, 4 (S) Source Four parallel source terminals reduce bond-wire inductance and improve current sharing in high-di/dt applications.
5, 6, 7, 8 (D) Drain Four drain terminals connected to large exposed copper pad - primary thermal path to PCB ground plane.
Pin 1 (G) Gate Single gate input located adjacent to source pins to minimize gate loop inductance and suppress oscillation during fast switching.

Key Features

Feature Design Value
Low RDS(ON) at 4.5V 2.8mΩ enables efficient operation with standard PWM controller gate drivers without level-shifting circuitry.
Optimized Qgd × RDS(ON) 36.7 mΩ·nC - balances switching loss and conduction loss for 500kHz–1MHz synchronous buck topologies.
100% UIS-rated avalanche Validated 58A single-pulse avalanche current ensures robustness against inductive kickback in motor gate drives and DC-DC startup faults.
Green packaging Halogen- and antimony-free, RoHS 3 compliant (Br+Cl <1500ppm, Sb <1000ppm), suitable for automotive and medical end equipment.

Applications

GPU Core Voltage Regulator USB-C PD Fast-Charge Controller

Use Scenario: High-current, multi-phase buck converter supplying 0.7–1.2V to discrete graphics processing units in thin-and-light notebooks.

IC Role / Device Role / Timing Role: Synchronous rectifier switch operating at 1MHz with 30ns turn-off fall time and 48ns turn-off delay.

Use Value: 1.7mΩ RDS(ON) reduces conduction loss by 42% vs. comparable SO-8 MOSFETs, enabling 95% peak efficiency at 100A output.

Use Scenario: Secondary-side synchronous rectifier in 45W–100W USB-C Power Delivery adapters with variable output (5–20V).

IC Role / Device Role / Timing Role: Low-VGS(th) (1–3V) N-channel switch controlled by dedicated SR controller, leveraging fast tF = 29ns for high-frequency ZVS operation.

Use Value: 2.8mΩ RDS(ON) at 4.5V allows full-load efficiency >93% across 5–20V output range without gate boosting.

LCD Backlight LED Driver Industrial PLC I/O Module

Use Scenario: Constant-current boost driver powering 4–8 series-connected white LEDs in automotive instrument clusters.

IC Role / Device Role / Timing Role: High-side switch controlling LED string current with 100A pulsed capability (IDM = 440A) for PWM dimming transients.

Use Value: 172mJ EAS withstands inductive energy from boost inductor during rapid PWM off-transitions without snubber.

Use Scenario: Solid-state relay replacement in 24V DC digital output modules driving solenoids and contactors.

IC Role / Device Role / Timing Role: Low-RDS(ON) power switch with integrated body diode (VSD = 0.7–1.0V) enabling bidirectional current handling in H-bridge motor control.

Use Value: 3.9°C/W RθJC permits 2.6W continuous dissipation at 100°C case temperature - sufficient for 2A/24V loads without forced air.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
DMTH3010LPS-13 Same PowerDI3333-8 package, but 30V/1.4mΩ @ 10V, higher Qg (75nC) and RθJC (4.2°C/W). Slightly lower RDS(ON) but slower switching due to higher gate charge - better for lower-frequency (<300kHz), higher-current applications. Select when conduction loss dominates and thermal margin exceeds 2.2W; avoid in 1MHz+ VRMs due to increased switching loss.
SIS890DN-T1-GE3 SO-8 package, 30V/1.8mΩ @ 10V, RθJC = 5.5°C/W, no UIS rating, larger board footprint. Lacks avalanche ruggedness and thermal performance - requires external TVS and heatsinking in inductive loads. Acceptable only in cost-sensitive, non-automotive consumer applications with strict SO-8 compatibility requirements.

Compared with DMT32M4LFG-7, DMTH3010LPS-13 trades marginal RDS(ON) improvement for higher switching loss, while SIS890DN-T1-GE3 sacrifices reliability and thermal density for legacy package compatibility - making DMT32M4LFG-7 optimal for space-constrained, high-reliability DC-DC designs.

Availability

DMT32M4LFG-7 is available at Aetrix Electronics and suitable for GPU voltage regulation, USB-C PD fast-charge adapters, and industrial PLC I/O modules requiring stable component supply with full traceability and long-term lifecycle support.

Supply support for DMT32M4LFG-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and distribution operations across Asia, Europe, and North America.

This device belongs to Diodes' Power MOSFET product line, engineered specifically for high-efficiency, high-density power conversion in computing, consumer, and industrial applications - emphasizing low RDS(ON), fast switching, and robust thermal packaging.

FAQ

What is the maximum continuous drain current at TA = +70°C?

The DMT32M4LFG-7 supports 24A continuous drain current at ambient temperature +70°C, derated from 30A at +25°C per its thermal resistance (RθJA = 115°C/W on FR-4 with 2oz copper). This rating assumes standard PCB layout with thermal vias to inner ground layers.

Is this MOSFET qualified for automotive applications?

No - DMT32M4LFG-7 is not AEC-Q101 qualified. While it meets RoHS 3 and halogen-free requirements, Diodes specifies that automotive-grade variants require explicit PPAP documentation and IATF 16949 manufacturing - confirmed separately via part numbers suffixed with "-Q" or "-AQ".

How does the PowerDI3333-8 package improve thermal performance over SO-8?

PowerDI3333-8 achieves RθJC = 3.9°C/W versus ~6°C/W for SO-8 by using a larger exposed drain pad directly soldered to PCB copper, reducing thermal impedance by 35%. Its 33% smaller footprint also lowers parasitic inductance in high-di/dt paths.

Can this MOSFET be used in synchronous rectification with 3.3V gate drive?

Yes - with RDS(ON) = 2.8mΩ at VGS = 4.5V and gate threshold of 1–3V, it remains fully enhanced at 3.3V gate drive in most cases. However, actual on-resistance rises to ~3.5mΩ at 3.3V (per extrapolated transfer curves), increasing conduction loss by ~25% versus 4.5V drive.

DMT32M4LFG-7 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
8-PowerVDFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
30A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
1.7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
67 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
4366 pF @ 15 V
FET Feature:
-
Power Dissipation (Max):
1.1W
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
POWERDI3333-8

DMT32M4LFG-7 FAQ

1.How can I place an order for DMT32M4LFG-7 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMT32M4LFG-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMT32M4LFG-7 reliable?

The price and inventory of DMT32M4LFG-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT32M4LFG-7 is usually 5 days.

3.What payment methods are accepted for DMT32M4LFG-7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT32M4LFG-7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMT32M4LFG-7?

DMT32M4LFG-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMT32M4LFG-7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMT32M4LFG-7?

For technical support, including DMT32M4LFG-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT32M4LFG-7 requirements.

6.How does Aetrix verify that DMT32M4LFG-7 is sourced from the original manufacturer or authorized distributors?

All DMT32M4LFG-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT32M4LFG-7 meets industry standards.

7.What is the process for return or replacement of DMT32M4LFG-7?

All DMT32M4LFG-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMT32M4LFG-7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMT32M4LFG-7 part is unused and in its original packaging.

Return procedure for DMT32M4LFG-7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMT32M4LFG-7 Tags

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