Diodes Incorporated DMT32M4LPSW-13

Overview

DMT32M4LPSW from Diodes Incorporated is a 30V N-channel enhancement-mode MOSFET in PowerDI5060-8 (SWP) package, optimized for high-current load switching and DC-DC power conversion. It delivers 1.7 mΩ R_DS(ON) at V_GS = 10 V, supports 100 A continuous drain current at T_C = +25°C, and features low input capacitance (3944 pF) and fast switching (t_D(ON) = 7.2 ns). It is deployed in server VRMs and notebook power rails where thermal efficiency and thin-profile packaging are critical.

For engineers reviewing the DMT32M4LPSW datasheet, DMT32M4LPSW pinout, DMT32M4LPSW application, or DMT32M4LPSW equivalent, key selection criteria include its 1.5–1.7 mΩ on-resistance at 10 V gate drive, 1.5 °C/W junction-to-case thermal resistance, 80 A body diode rating, and compatibility with 4.5 V logic-level control in compact, thermally enhanced PowerDI5060-8 packaging.

Technical Context

This MOSFET employs trench-gate silicon process technology to achieve ultra-low R_DS(ON) while maintaining robust avalanche capability (E_AS = 140 mJ) and fast dynamic performance. Its gate threshold voltage (1–3 V) ensures reliable turn-on with standard logic drivers, and its low Q_g (68 nC at V_GS = 10 V) minimizes switching losses in high-frequency synchronous buck stages.

The device integrates an intrinsic body diode with t_RR = 28.7 ns and Q_RR = 45.8 nC, enabling efficient reverse recovery in high-side switch configurations. Its PowerDI5060-8 package uses an exposed drain pad for direct thermal coupling to PCB copper, delivering 83 W power dissipation at T_C = +25°C - a design choice targeting space-constrained, high-power-density applications.

Key Specifications

Pinout & Package

Package: PowerDI5060-8 (SWP), surface-mount, thermally enhanced with exposed drain pad. Dimensions: 5.15 × 6.40 mm footprint, 1.00 mm nominal height. Molded green compound (UL 94V-0), matte tin annealed terminals.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with DMT32M4LPSW-7, the subject part offers identical performance in a smaller reel format ideal for pilot builds; versus DMTH32M4LPSW-13, it trades extended temperature/voltage rating for cost and footprint optimization in commercial-grade 30 V systems.

Availability

DMT32M4LPSW is available at Aetrix Electronics and suitable for server VRMs, notebook power delivery, industrial PLC load switching, and automotive infotainment DC-DC conversion requiring stable component supply across multi-year production cycles.

Supply support for DMT32M4LPSW includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

This MOSFET belongs to Diodes' Power MOSFET product line, engineered specifically for high-efficiency, high-current power conversion in space-constrained applications - emphasizing low R_DS(ON), fast switching, and thermally optimized packaging.

FAQ

What is the maximum allowable junction temperature for continuous operation?

The DMT32M4LPSW has a specified operating junction temperature range of −55°C to +150°C. For continuous reliability, Diodes recommends limiting steady-state T_J to ≤145°C using derated power curves from Figure 12 (SOA) and transient thermal data in Figure 13. Exceeding 150°C risks permanent parametric shift and accelerated wear-out.

Can this MOSFET be used in parallel configurations?

Yes - the DMT32M4LPSW supports paralleling due to its positive temperature coefficient of R_DS(ON) (see Figure 6), which promotes current sharing. Designers must match gate drive impedance, minimize layout asymmetry, and use separate gate resistors (≥1 Ω) to suppress oscillation. Source inductance imbalance must be kept below 0.2 nH per phase.

Is the PowerDI5060-8 package compatible with standard reflow profiles?

Yes - the package is rated for moisture sensitivity level 1 per J-STD-020 and supports industry-standard lead-free reflow profiles (peak 260°C, 60 sec max above 217°C). The UL 94V-0 molding compound and matte tin finish ensure solderability per MIL-STD-202, Method 208, with no pre-bake required for dry-packed reels.

Does this MOSFET require a gate resistor for stability?

Yes - a gate resistor (typically 1–5 Ω) is required to dampen ringing caused by gate-drain capacitance (Crss = 186 pF) interacting with PCB trace inductance. Without it, overshoot exceeding ±20 V can occur during fast switching, risking gate oxide damage. Layout best practices include minimizing gate loop area and routing gate traces over solid ground planes.