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Diodes Incorporated DMT32M5LFG-13
- Part No.:
- DMT32M5LFG-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerVDFN
- Datasheet:
-
DMT32M5LFG-13.pdf
- Description:
- MOSFET N-CH 30V 30A POWERDI3333
- Quantity:
- Payment:
- Shipping:
Inventory:2,692
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Product details
Overview
DMT32M5LFG-13 from Diodes Incorporated is a 30V N-channel enhancement-mode MOSFET in PowerDI3333-8 package, delivering 1.7 mΩ RDS(ON) at VGS = 10 V and 100 A continuous drain current at TC = +25°C. It features 100% UIS-rated avalanche capability, low Qgd × RDS(ON) figure-of-merit, and thermally efficient packaging optimized for high-density DC-DC converters.
For engineers reviewing the DMT32M5LFG-13 datasheet, DMT32M5LFG-13 pinout, DMT32M5LFG-13 application, or DMT32M5LFG-13 equivalent, this device is selected for high-efficiency power management where low conduction loss, fast switching, and compact board footprint are critical - especially in space-constrained backlighting and point-of-load regulator designs.
Technical Context
This MOSFET employs trench-gate silicon technology to achieve ultra-low on-resistance while maintaining robust switching performance. Its gate threshold voltage (1.4 V typ) enables compatibility with 3.3 V and 5 V logic-level drive, and its normalized RDS(ON) variation remains under 2× across –55°C to +150°C junction temperature.
The device integrates an intrinsic body diode with 0.7 V typical forward voltage at 2 A and 28.7 ns reverse recovery time. Its dynamic parameters - including 67.7 nC total gate charge at VGS = 10 V and 333 pF Crss - support high-frequency operation up to several hundred kHz in synchronous buck topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30 V - Maximum blocking voltage before avalanche onset; suitable for 24 V input rail systems with margin. |
| RDS(ON) | 1.7 mΩ @ VGS = 10 V, ID = 20 A - Enables <1.7 W conduction loss at 100 A in ideal thermal conditions. |
| ID (continuous) | 100 A @ TC = +25°C - Requires exposed-drain thermal pad soldering to PCB copper for rated current handling. |
| Qg | 67.7 nC @ VGS = 10 V - Determines gate driver power requirement and switching transition time in hard-switched applications. |
| EAS | 109 mJ - Confirmed single-pulse avalanche energy rating supports reliable operation during transient overvoltage events. |
| RθJC | 2.5 °C/W - Junction-to-case thermal resistance enables direct heat transfer to heatsink or PCB thermal plane via exposed drain pad. |
Pinout & Package
Package: PowerDI®3333-8 - surface-mount, thermally enhanced 8-pin package with integrated exposed drain pad (pins 5–8), 3.3 mm × 3.3 mm footprint, and 0.8 mm height. Molded green compound meets UL 94V-0 and RoHS 3/REACH requirements.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source | Four parallel source terminals reduce bond-wire inductance and improve current sharing in high-di/dt switching. |
| 5, 6, 7, 8 | Drain (exposed pad) | Common drain connection formed by large copper-exposed bottom pad; primary thermal and current path to PCB. |
| 1 (top marking indicator) | Pin 1 identifier | Notch on top surface marks Pin 1; orientation confirmed by "SK2" marking and date code adjacent to notch. |
| - | Gate | Single gate terminal at Pin 3 (per top-view diagram); requires low-inductance layout to minimize ringing during switching. |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(ON) | 1.7 mΩ @ 10 V drive reduces conduction losses by >40% vs. comparable SO-8 MOSFETs in 12–24 V input converters. |
| Thermal efficiency | RθJC = 2.5 °C/W enables 50 W power dissipation at TC = +25°C - double the capability of standard SO-8 packages. |
| Board area reduction | 33% smaller footprint than SO-8 - frees PCB real estate for higher integration density in portable and automotive modules. |
| Avalanche ruggedness | 100% UIS tested to 46.7 A / 109 mJ - eliminates need for external clamping in inductive load switching circuits. |
| Green compliance | Halogen- and antimony-free (<900 ppm Br/Cl, <1000 ppm Sb); matte tin annealed finish ensures reliable solderability per MIL-STD-202. |
Applications
| LED Backlight Driver | Server Point-of-Load Converter |
|---|---|
|
Use Scenario: High-current PWM dimming circuit for LCD panel edge-lit LED strings in industrial displays. IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch controlling LED current path with 100 kHz–500 kHz switching frequency. Use Value: 1.7 mΩ RDS(ON) limits I²R loss to <1.7 W at 100 A peak, enabling passive cooling and extending LED lifetime. |
Use Scenario: 48 V-to-12 V intermediate bus converter supplying CPU/GPU VRMs in data center servers. IC Role / Device Role / Timing Role: Primary high-side switch in interleaved buck stage operating at 300 kHz with 50 ns dead-time control. Use Value: 67.7 nC Qg and 333 pF Crss enable clean turn-on/turn-off transitions, reducing EMI and improving efficiency above 95%. |
| Automotive Body Control Module | USB-C PD Power Path Switch |
|
Use Scenario: Load switch for 12 V accessory power distribution (e.g., seat heaters, mirror defoggers) with short-circuit protection. IC Role / Device Role / Timing Role: Protected high-current switch with integrated avalanche energy absorption during inductive load disconnection. Use Value: 109 mJ EAS withstands 12 V battery dump transients without failure, eliminating need for external TVS diodes. |
Use Scenario: Bidirectional 20 V/5 A power path switch in USB-C PD 3.1 extended power range (EPR) adapters. IC Role / Device Role / Timing Role: Low-RDS(ON) pass transistor enabling <30 mW conduction loss at 5 A, critical for thermal budget in compact adapters. Use Value: 3.3 mm × 3.3 mm footprint allows dual-device placement for redundant power paths within 10 mm² PCB area. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMTH3010LPS-13 | RDS(ON) = 1.8 mΩ @ 10 V; same PowerDI3333-8 package but higher Qg (75 nC). | Slightly lower switching efficiency at >200 kHz due to higher gate charge; identical thermal performance. | Prefer DMT32M5LFG-13 when minimizing gate driver loss or optimizing for <300 kHz operation. |
| SiR626DP-T1-GE3 | RDS(ON) = 1.6 mΩ @ 10 V; PowerPAK® SO-8 package with RθJA = 40 °C/W (vs. 54 °C/W for DMT32M5LFG). | Larger 5 mm × 6 mm footprint; higher thermal resistance to ambient limits usable current in unheatsinked layouts. | Choose DMT32M5LFG-13 for space-constrained designs requiring superior board-area efficiency and lower profile. |
Compared with DMTH3010LPS-13 and SiR626DP-T1-GE3, DMT32M5LFG-13 delivers the best balance of ultra-low RDS(ON), minimal gate charge, and smallest footprint - making it optimal for high-current, high-density DC-DC stages where thermal pad access and layout area are constrained.
Availability
DMT32M5LFG-13 is available at Aetrix Electronics and suitable for LED backlighting, server point-of-load converters, and automotive body control modules requiring stable component supply and long-term production continuity.
Supply support for DMT32M5LFG-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.
This MOSFET belongs to Diodes' PowerMOS™ portfolio, engineered specifically for high-efficiency, high-current switching in DC-DC conversion, motor control, and power distribution systems - emphasizing low RDS(ON), rugged avalanche performance, and compact thermally optimized packaging.
FAQ
What is the maximum safe operating junction temperature for DMT32M5LFG-13?
The absolute maximum junction temperature is +150°C, with derating required above +25°C case temperature. Thermal design must ensure RθJC = 2.5 °C/W path to the PCB's thermal plane is maintained via full-solder coverage of the exposed drain pad; exceeding TJ = +150°C risks permanent parametric shift or catastrophic failure.
Can DMT32M5LFG-13 be driven directly by a 3.3 V microcontroller GPIO?
No - its gate threshold voltage (VGS(TH)) ranges from 1.0 V to 3.0 V, but full enhancement requires ≥4.5 V to achieve 2.8 mΩ RDS(ON). At 3.3 V, RDS(ON) rises to ~4.2 mΩ (extrapolated), increasing conduction loss by >50%; a dedicated gate driver or level shifter is required for reliable 100 A operation.
Is DMT32M5LFG-13 qualified for automotive applications per AEC-Q101?
No - the datasheet states that automotive-qualified versions require explicit change control, PPAP capability, and IATF 16949 manufacturing; DMT32M5LFG-13 is not listed in Diodes' AEC-Q101 qualified product catalog and lacks automotive-specific test reports or qualification markings.
How does the PowerDI3333-8 package compare to SO-8 in thermal performance?
PowerDI3333-8 achieves RθJC = 2.5 °C/W versus ~3.5–4.0 °C/W for SO-8, due to its copper-exposed drain pad directly soldered to PCB copper. Its RθJA is 54 °C/W on 2 oz FR-4 (vs. ~62 °C/W for SO-8), enabling 22% higher power dissipation at equal board area and ambient conditions.
DMT32M5LFG-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerVDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 30A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 1.7mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 67.7 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 4066 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.3W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerDI3333-8
DMT32M5LFG-13 FAQ
1.How can I place an order for DMT32M5LFG-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMT32M5LFG-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMT32M5LFG-13 reliable?
The price and inventory of DMT32M5LFG-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT32M5LFG-13 is usually 5 days.
3.What payment methods are accepted for DMT32M5LFG-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT32M5LFG-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMT32M5LFG-13?
DMT32M5LFG-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMT32M5LFG-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMT32M5LFG-13?
For technical support, including DMT32M5LFG-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT32M5LFG-13 requirements.
6.How does Aetrix verify that DMT32M5LFG-13 is sourced from the original manufacturer or authorized distributors?
All DMT32M5LFG-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT32M5LFG-13 meets industry standards.
7.What is the process for return or replacement of DMT32M5LFG-13?
All DMT32M5LFG-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMT32M5LFG-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMT32M5LFG-13 part is unused and in its original packaging.
Return procedure for DMT32M5LFG-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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