Diodes Incorporated DMT32M5LPS-13

Overview

DMT32M5LPS-13 from Diodes Incorporated is a 30V N-channel enhancement-mode MOSFET in PowerDI5060-8 package, optimized for high-current load switching and DC-DC power conversion. It delivers 2.0 mΩ R_DS(ON) at V_GS = 10 V, supports 150 A continuous drain current at T_C = +25°C, and features low gate charge (68 nC at V_GS = 10 V) for fast switching in high-efficiency power stages.

For engineers reviewing the DMT32M5LPS-13 datasheet, DMT32M5LPS-13 pinout, DMT32M5LPS-13 application, or DMT32M5LPS-13 equivalent, key selection criteria include on-resistance vs. gate drive voltage (2.3 mΩ @ 4.5 V), thermal resistance (R_θJC = 1.5°C/W), body diode recovery (t_RR = 28.7 ns), and thermally efficient exposed-drain packaging for high-power density designs.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve ultra-low R_DS(ON) while maintaining robust switching performance. Its 1.5°C/W junction-to-case thermal resistance enables direct thermal coupling to PCB copper or heatsinks, supporting high-current operation without external cooling in compact layouts.

The device integrates a fast-recovery body diode (Q_RR = 45.8 nC, t_RR = 28.7 ns) and exhibits low input capacitance (C_iss = 3944 pF) and reverse transfer capacitance (C_rss = 186 pF), reducing Miller effect and enabling stable operation in synchronous buck converters and hot-swap circuits.

Key Specifications

Pinout & Package

Package: PowerDI5060-8 - Thermally enhanced surface-mount package with exposed drain pad for low-impedance heat transfer; 1.0 mm profile ideal for space-constrained power modules.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with DMT32M5LPS-13, the -7 offers identical performance with improved mechanical durability for harsh environments, while DMTH32M5LPS-13 adds automotive qualification at higher cost-neither is pin-compatible with non-Diodes alternatives due to PowerDI5060-8's unique 8-pin asymmetric layout.

Availability

DMT32M5LPS-13 is available at Aetrix Electronics and suitable for server VRMs, automotive load switches, and industrial DC-DC converters requiring stable component supply, high-current capability, and thermally efficient packaging.

Supply support for DMT32M5LPS-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-performance power management, signal integrity, and protection solutions for industrial, computing, and automotive markets.

This MOSFET belongs to Diodes' PowerDI® portfolio, engineered specifically for high-current, low-voltage power conversion where thermal efficiency and switching speed are critical-targeting next-generation data center, EV, and portable power systems.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

At T_C = +100°C, the DMT32M5LPS-13 supports 85 A continuous drain current. This derating is derived from the device's 150 A rating at +25°C and its thermal characteristics: R_θJC = 1.5°C/W and maximum junction temperature of +150°C yield a 50°C allowable rise, resulting in 85 A using the square-law relationship between current and R_DS(ON) increase.

Does this MOSFET require a gate resistor for stable operation in a 500 kHz buck converter?

Yes-a 2.2 Ω to 4.7 Ω gate resistor is recommended to dampen ringing caused by the 0.6 Ω intrinsic gate resistance interacting with PCB trace inductance and C_iss = 3944 pF. Without it, overshoot exceeding ±20 V on the gate can trigger parasitic turn-on; empirical testing shows 3.3 Ω optimizes switching loss vs. EMI trade-off at 500 kHz.

Can the DMT32M5LPS-13 be used in parallel configurations?

Yes-its positive temperature coefficient of R_DS(ON) (normalized resistance increases 1.6× from −55°C to +150°C) ensures inherent current sharing. Successful parallel operation requires matched gate drive paths, symmetrical PCB layout, and shared source Kelvin connections; Diodes' application note AP02012 confirms stable 300 A operation with two devices.

Is the PowerDI5060-8 package compatible with standard reflow profiles for lead-free assembly?

Yes-the device is qualified for J-STD-020 Level 1 moisture sensitivity and withstands peak reflow temperatures up to 260°C. Its matte tin annealed finish ensures reliable solder wetting; recommended profile uses 60–90 sec above 217°C with ramp rate ≤3°C/s, matching IPC-J-STD-020 Class 3 requirements for high-reliability industrial assemblies.