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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMT32M5LPSW-13

Name: DMT32M5LPSW-13
Brand: Diodes Incorporated
SKU: DMT32M5LPSW-13
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMT32M5LPSW-13

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: DMT32M5LPSW-13.pdf

Description:: MOSFET BVDSS: 25V~30V POWERDI506

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Product details

Overview

DMT32M5LPSW-13 from Diodes Incorporated is a 30V N-channel enhancement-mode power MOSFET in PowerDI5060-8 (SWP) package, rated for 100A continuous drain current at TC = +25°C, with R_DS(ON) of 2.0 mΩ @ V_GS = 10V and 3.0 mΩ @ V_GS = 4.5V. It serves as a high-efficiency load switch or synchronous rectifier in DC-DC converters.

For engineers reviewing the DMT32M5LPSW-13 datasheet, DMT32M5LPSW-13 pinout, DMT32M5LPSW-13 application, or DMT32M5LPSW-13 equivalent, key selection criteria include low R_DS(ON) at 4.5V gate drive, wettable flank for automated optical inspection, thermal resistance R_θJC = 1.5°C/W, and AEC-Q101 readiness for automotive-grade power management.

Technical Context

This MOSFET employs trench-gate silicon technology optimized for low conduction loss and fast switching in high-current, space-constrained applications. Its 100% production-tested UIS capability ensures robustness against inductive energy spikes during load switching.

The PowerDI5060-8 (SWP) package integrates an exposed drain pad for direct thermal coupling to PCB copper, enabling 100W power dissipation at T_C = +25°C. Gate charge parameters (Q_g = 68 nC @ V_GS = 10V) support efficient gate driver sizing for <100 ns total switching times.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	30 V - Maximum blocking voltage for 12V/24V automotive and industrial bus systems.
R_DS(ON)	2.0 mΩ @ V_GS = 10V - Enables ≤0.2 W conduction loss at 100A, critical for high-efficiency power stages.
I_D (continuous)	100 A @ T_C = +25°C - Supports high-current load switching without external heatsink when mounted on ≥1-in² 2oz copper.
R_θJC	1.5 °C/W - Allows precise junction temperature estimation from case temperature measurement in thermal design.
Q_g	68 nC @ V_GS = 10V - Determines required gate driver peak current (e.g., >6.8 A for 10 ns rise time).
t_F	23.9 ns - Limits turn-off switching loss in hard-switched topologies operating up to 500 kHz.
E_AS	140 mJ - Specifies single-pulse avalanche energy handling for unclamped inductive load interruption.

Pinout & Package

Package: PowerDI5060-8 (SWP), surface-mount, thermally enhanced with exposed drain pad. Dimensions: 5.15 × 6.40 mm footprint, 1.00 mm nominal height. Wettable flank terminals enable solder joint inspection via AOI.

Pin/Terminal	Circuit Role	Design Meaning
S (Source)	Power return path for channel current	Three parallel source pins reduce parasitic inductance and improve current sharing in high-di/dt operation.
G (Gate)	Control electrode for channel modulation	Single gate terminal with low R_g = 0.6 Ω supports fast, low-loss switching with minimal ringing.
D (Drain)	Main power output node and thermal interface	Eight drain terminals including large exposed pad provide dual function: current conduction and primary heat extraction path to PCB.

Key Features

Feature	Design Value
Thermally efficient package	PowerDI5060-8 delivers R_θJC = 1.5°C/W - enables 100W dissipation without external heatsink under controlled board layout.
Wettable flank terminals	Side-wettable leads allow automated optical inspection of solder fillet integrity, reducing post-reflow defect escapes.
Low R_DS(ON) at 4.5V	3.0 mΩ @ V_GS = 4.5V - ensures full enhancement with standard logic-level drivers in battery-powered systems.
100% UIS tested	Every unit undergoes unclamped inductive switching stress test - guarantees ruggedness in motor control and solenoid drive.
Green, RoHS-compliant construction	Halogen- and antimony-free molding compound (<900 ppm Br+Cl, <1000 ppm Sb) meets automotive environmental requirements.

Applications

Automotive Body Control Module

Server VRM High-Side Switch

Use Scenario: Controlling 12V lighting loads (headlamps, interior LEDs) in BCM with PWM dimming and short-circuit protection.

IC Role / Device Role / Timing Role: High-side load switch with integrated body diode for reverse-polarity protection and inductive kickback clamping.

Use Value: 2.0 mΩ R_DS(ON) limits power loss to <0.2 W at 10A, eliminating need for heatsink in compact modules.

Use Scenario: High-current, high-frequency synchronous rectification in 48V-to-12V intermediate bus converters for AI servers.

IC Role / Device Role / Timing Role: Low-side synchronous FET in multiphase buck converter, switching at 300–500 kHz with tight dead-time control.

Use Value: 68 nC Q_g and 23.9 ns t_F minimize switching loss while maintaining ZVS compatibility at high frequency.

Industrial PLC I/O Module

USB-C PD Power Path Switch

Use Scenario: Solid-state replacement for electromechanical relays in programmable logic controller digital output cards driving 24V solenoids and valves.

IC Role / Device Role / Timing Role: Robust load switch with 140 mJ E_AS rating to absorb inductive energy during rapid de-energization.

Use Value: 100% production UIS testing ensures field reliability across millions of actuation cycles without derating.

Use Scenario: Bidirectional 5–20V, 5A power path switch in USB-C PD sink applications requiring reverse-current blocking and overcurrent protection.

IC Role / Device Role / Timing Role: Dual-function switch supporting both forward and reverse conduction with low V_SD = 0.8 V body diode drop.

Use Value: 3.0 mΩ R_DS(ON) at 4.5V gate drive enables full 5A operation using standard 3.3V/5V GPIO controllers.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRL8721PBF	R_DS(ON) = 3.2 mΩ @ 4.5V; TO-220AB package; R_θJC = 1.0°C/W but requires heatsink mounting.	Larger footprint and manual assembly; lacks wettable flanks and AEC-Q101 qualification.	Prefer DMT32M5LPSW-13 for automated SMT lines and space-constrained automotive modules.
DMTH3016LPS-13	Same PowerDI5060-8 package; R_DS(ON) = 1.6 mΩ @ 10V but only 3.8 mΩ @ 4.5V; lower I_D = 80A.	Higher R_DS(ON) at low V_GS reduces efficiency in 3.3V-driven systems; lower current rating limits scalability.	Choose DMT32M5LPSW-13 where 4.5V drive and 100A capacity are mandatory for future-proofing.

Compared with IRL8721PBF and DMTH3016LPS-13, DMT32M5LPSW-13 uniquely combines sub-3-mΩ R_DS(ON) at 4.5V, wettable flank inspection, and AEC-Q101 readiness in a thermally optimized 5×6 mm SMT package - making it optimal for high-volume automotive and server power delivery where manufacturability and thermal density are critical.

Availability

DMT32M5LPSW-13 is available at Aetrix Electronics and suitable for automotive body electronics, server VRMs, industrial PLC I/O modules, and USB-C PD power path designs requiring stable component supply and long-term lifecycle assurance.

Supply support for DMT32M5LPSW-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and distribution operations across Asia, Europe, and North America.

This device belongs to Diodes' Power MOSFET product line, engineered specifically for high-current, low-voltage power conversion and load switching in automotive, computing, and industrial systems where thermal performance and AEC-Q101 compliance are essential.

FAQ

What is the maximum junction temperature and how does it affect thermal design?

The DMT32M5LPSW-13 has a rated operating junction temperature range of –55°C to +150°C. At T_J = 150°C, R_DS(ON) increases by ~2.5× versus 25°C, so thermal design must ensure T_J stays below this limit under worst-case ambient and power dissipation. Using the R_θJC = 1.5°C/W value and measured case temperature allows direct junction estimation without IR imaging.

Does this MOSFET require a gate resistor for stability, and what value is recommended?

Yes - a gate resistor is required to dampen ringing caused by gate-drain capacitance (Crss = 180 pF) interacting with PCB inductance. For typical 3.3V or 5V gate drivers, a 2.2–4.7 Ω series resistor provides optimal tradeoff between switching speed (t_F ≈ 24 ns) and overshoot suppression, verified in Diodes' reference layouts for PowerDI5060-8.

Is the body diode suitable for reverse-current conduction in USB-C PD applications?

Yes - the intrinsic body diode has V_SD = 0.8 V (typ) at 30A and t_RR = 28.7 ns, enabling efficient reverse conduction in USB-C PD sink mode. Its low Q_RR = 45.8 nC minimizes recovery loss during bidirectional switching, and the 80A continuous body diode rating supports full 5A operation with margin.

How does the wettable flank feature impact solder process validation?

The wettable flank design exposes vertical sidewalls of all eight terminals, allowing automated optical inspection (AOI) systems to verify solder fillet formation and coplanarity without X-ray. This eliminates manual visual checks and improves first-pass yield in high-speed SMT lines, especially critical for automotive PPAP submissions where process traceability is mandated.

DMT32M5LPSW-13 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 2mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 3V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 68 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4389 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 3.2W (Ta), 100W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount, Wettable Flank

Supplier Device Package:: PowerDI5060-8 (Type UX)

DMT32M5LPSW-13 FAQ

1.How can I place an order for DMT32M5LPSW-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMT32M5LPSW-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMT32M5LPSW-13 reliable?

The price and inventory of DMT32M5LPSW-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT32M5LPSW-13 is usually 5 days.

3.What payment methods are accepted for DMT32M5LPSW-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT32M5LPSW-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMT32M5LPSW-13?

DMT32M5LPSW-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMT32M5LPSW-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMT32M5LPSW-13?

For technical support, including DMT32M5LPSW-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT32M5LPSW-13 requirements.

6.How does Aetrix verify that DMT32M5LPSW-13 is sourced from the original manufacturer or authorized distributors?

All DMT32M5LPSW-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT32M5LPSW-13 meets industry standards.

7.What is the process for return or replacement of DMT32M5LPSW-13?

All DMT32M5LPSW-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMT32M5LPSW-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMT32M5LPSW-13 part is unused and in its original packaging.

Return procedure for DMT32M5LPSW-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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