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Diodes Incorporated DMT32M6LDG-13
- Part No.:
- DMT32M6LDG-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 8-PowerVDFN
- Datasheet:
-
DMT32M6LDG-13.pdf
- Description:
- MOSFET 2N-CH 30V 21A PWRDI3333
- Quantity:
- Payment:
- Shipping:
Inventory:2,990
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Product details
Overview
DMT32M6LDG-13 from Diodes Incorporated is a symmetric dual N-channel MOSFET in PowerDI3333-8 (Type G) package, rated for 30V VDSS, 2.5mΩ/2.9mΩ RDS(ON) at 10V VGS for Q1/Q2, and 47A continuous drain current at TC = +25°C. It delivers high-efficiency synchronous rectification and load switching in DC-DC converters and motor drivers.
For engineers reviewing the DMT32M6LDG-13 datasheet, DMT32M6LDG-13 pinout, DMT32M6LDG-13 application, or DMT32M6LDG-13 equivalent, this device supports high-current, low-RDS(ON) power stages requiring fast switching (tF = 15.4ns), low gate charge (Qg = 31.7nC @ 10V), and thermally robust operation up to +150°C junction temperature.
Technical Context
This dual MOSFET integrates two matched N-channel silicon devices in a single PowerDI3333-8 package with shared thermal pad and isolated source terminals. Each channel features identical 30V breakdown voltage, 1–2.2V gate threshold, and body diode forward voltage of 0.8–1.2V at 18A.
Its dynamic performance includes Ciss = 2101/2106pF, Coss = 1488/1491pF, and Crss = 73pF per channel, enabling efficient hard-switching operation in buck converters and H-bridge topologies with minimal Miller-induced shoot-through risk.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30V - Maximum blocking voltage for both channels; supports 24V nominal bus systems with margin. |
| RDS(ON) Q1/Q2 @ 10V | 2.5mΩ / 2.9mΩ - Enables <1W conduction loss at 47A; critical for high-efficiency power stages. |
| ID Continuous @ TC = 25°C | 47A per channel - Sustains high-current loads without derating when mounted on 2oz copper with thermal bias. |
| Qg @ 10V | 31.7nC / 32nC - Low gate drive energy reduces driver IC stress and enables >1MHz switching in compact designs. |
| tF | 15.4ns / 15.1ns - Fast fall time minimizes switching transition losses in high-frequency DC-DC converters. |
| TJ Range | −55°C to +150°C - Qualified for extended industrial and under-hood automotive environments. |
| RθJC | 14.4°C/W - Low junction-to-case resistance allows direct thermal coupling to heatsink or PCB copper pour. |
Pinout & Package
Package: PowerDI3333-8 (Type G), surface-mount, thermally enhanced with exposed drain pad. Molded green compound (UL 94V-0), lead-free matte tin finish, moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Q1 Drain (common to exposed pad) | Primary current path for Q1; electrically and thermally connected to exposed copper pad for low RθJC. |
| 5 | Q1 Source | Reference node for Q1 gate drive; isolated from Q2 source to support independent control. |
| 6 | Q1 Gate | Control input for Q1; requires <2.2V threshold and 31.7nC total charge for full enhancement. |
| 7 | Q2 Gate | Control input for Q2; matched threshold and timing to Q1 for symmetrical dual-channel operation. |
| 8 | Q2 Source | Reference node for Q2 gate drive; electrically isolated from Q1 source to enable half-bridge or dual-phase configurations. |
| Exposed Pad | Q1 & Q2 Drain (common) | Thermal and electrical connection point for both drains; must be soldered to large copper area for thermal management. |
Key Features
| Feature | Design Value |
|---|---|
| Symmetric dual N-channel topology | Enables matched timing and conduction in synchronous buck, dual-phase, or bidirectional switch applications without external balancing. |
| Low RDS(ON) at 4.5V VGS | 3.2mΩ (Q1) / 3.6mΩ (Q2) - Supports logic-level gate drive from 3.3V/5V controllers without level-shifting. |
| Low Ciss and Crss | 2101pF / 2106pF input capacitance and 73pF reverse transfer capacitance - Reduces gate drive power and improves EMI profile. |
| Fast switching with low Qgd | 5.0nC / 4.4nC gate-drain charge - Limits Miller plateau duration and enables clean turn-off in high-dV/dt environments. |
| Green, RoHS-compliant construction | <900ppm Br, <900ppm Cl, <1000ppm Sb - Meets global environmental regulations without compromising thermal or electrical performance. |
Applications
| DC-DC Synchronous Buck Converter | Motor Driver Half-Bridge |
|---|---|
|
Use Scenario: High-efficiency 12V-to-1.2V VRM for FPGA or ASIC core supply. IC Role / Device Role: Dual-channel power switch replacing discrete high-side/low-side MOSFETs; Q1 as high-side, Q2 as low-side. Use Value: 2.5mΩ/2.9mΩ RDS(ON) cuts conduction loss by >35% vs. legacy 5mΩ duals, improving full-load efficiency to >94%. |
Use Scenario: 24V brushed DC motor control in industrial actuator. IC Role / Device Role: Half-bridge output stage where Q1 drives motor phase A, Q2 drives phase B (or complementary PWM). Use Value: Matched tF/tR and VGS(TH) ensure balanced dead-time behavior and reduce shoot-through risk during commutation. |
| USB-C PD Power Path Switch | Redundant Load Switch |
|
Use Scenario: 20V/5A USB-C Power Delivery input protection and path selection. IC Role / Device Role: Dual N-channel back-to-back configuration for bidirectional blocking and low-loss forward conduction. Use Value: Body diode VSD ≤1.2V at 18A enables low-loss reverse conduction during PD negotiation, avoiding external Schottky diodes. |
Use Scenario: Dual-redundant 48V server power distribution with OR-ing function. IC Role / Device Role: Independent load switches for hot-swap redundancy; each channel controls one upstream supply rail. Use Value: 47A per channel rating supports parallel 100A+ systems; low IDSS (<1µA) ensures minimal standby leakage across redundant paths. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMT32M6UDG-13 | Same package and pinout; RDS(ON) = 3.2mΩ/3.6mΩ @ 4.5V (vs. 3.2mΩ/3.6mΩ here); otherwise identical specs. | Optimized for 4.5V gate drive; no advantage over DMT32M6LDG-13 when 10V drive is available. | Select DMT32M6LDG-13 for highest efficiency at 10V gate drive; choose DMT32M6UDG-13 only if constrained to 4.5V logic-level control. |
| DMN3029LSD-13 | SO-8 package, not PowerDI3333-8; RDS(ON) = 2.9mΩ/3.3mΩ @ 10V; lower ID = 30A per channel; higher RθJA = 50°C/W. | Limited thermal capability and current handling; unsuitable for >35A continuous applications. | Use only for space-constrained, lower-power designs where SO-8 footprint is mandatory and thermal budget permits. |
Compared with DMT32M6UDG-13, DMT32M6LDG-13 offers identical 4.5V RDS(ON) but superior 10V performance, while DMN3029LSD-13 sacrifices 30% current capacity and thermal efficiency for legacy SO-8 compatibility - making DMT32M6LDG-13 the optimal choice for high-density, high-current power stages.
Availability
DMT32M6LDG-13 is available at Aetrix Electronics and suitable for DC-DC converters, motor drivers, USB-C PD power path management, and redundant load switching requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.
Supply support for DMT32M6LDG-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-performance power management, signal integrity, and protection solutions.
The DMT32M6LDG-13 belongs to Diodes' Power MOSFET product line, engineered for high-efficiency, high-current switching in compact power conversion and motor control systems.
FAQ
What is the maximum safe operating temperature for DMT32M6LDG-13?
The device is rated for junction temperatures from −55°C to +150°C. Its thermal resistance RθJC is 14.4°C/W, and with proper PCB copper thermal vias and pad layout, it sustains 47A continuous drain current at TC = +25°C. Derating is required above +25°C case temperature per the datasheet's SOA curves.
Can DMT32M6LDG-13 be used in a back-to-back configuration for USB-C PD reverse-blocking?
Yes - its symmetric dual N-channel structure and low body diode VSD (0.8–1.2V at 18A) allow reliable back-to-back implementation. Both channels conduct forward with gate bias and block reverse current when gates are held low, meeting USB-C PD 3.0 path-switching requirements without external diodes.
Is DMT32M6LDG-13 qualified for automotive applications?
While not AEC-Q101 qualified out-of-box, Diodes states that automotive-grade versions with AEC-Q101 qualification, PPAP capability, and IATF 16949 manufacturing are available upon request. Standard DMT32M6LDG-13 is intended for industrial and computing applications.
How does the PowerDI3333-8 (Type G) package improve thermal performance over SO-8?
The PowerDI3333-8 exposes the drain pads as a large bottom-side copper area, achieving RθJC = 14.4°C/W - nearly 3× better than typical SO-8 MOSFETs (~40°C/W). This allows direct thermal coupling to PCB ground planes or heatsinks, enabling higher current density in space-constrained layouts.
DMT32M6LDG-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerVDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 30V
- Current - Continuous Drain (Id) @ 25°C:
- 21A (Ta), 47A (Tc)
- Rds On (Max) @ Id, Vgs:
- 2.5mOhm @ 18A, 10V
- Vgs(th) (Max) @ Id:
- 2.2V @ 400µA
- Gate Charge (Qg) (Max) @ Vgs:
- 15.6nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2101pF @ 15V
- Power - Max:
- 1.1W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerDI3333-8 (Type G)
DMT32M6LDG-13 FAQ
1.How can I place an order for DMT32M6LDG-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMT32M6LDG-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMT32M6LDG-13 reliable?
The price and inventory of DMT32M6LDG-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT32M6LDG-13 is usually 5 days.
3.What payment methods are accepted for DMT32M6LDG-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT32M6LDG-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMT32M6LDG-13?
DMT32M6LDG-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMT32M6LDG-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMT32M6LDG-13?
For technical support, including DMT32M6LDG-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT32M6LDG-13 requirements.
6.How does Aetrix verify that DMT32M6LDG-13 is sourced from the original manufacturer or authorized distributors?
All DMT32M6LDG-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT32M6LDG-13 meets industry standards.
7.What is the process for return or replacement of DMT32M6LDG-13?
All DMT32M6LDG-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMT32M6LDG-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMT32M6LDG-13 part is unused and in its original packaging.
Return procedure for DMT32M6LDG-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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